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KSA539CYTA ON Semiconductor Avnet - - -
KSA539CYTA Fairchild Semiconductor Corporation Rochester Electronics 12,242 $0.05 $0.04
KSA539YBU Fairchild Semiconductor Corporation Rochester Electronics 9,000 $0.04 $0.03

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KSA539 datasheet (17)

Part Manufacturer Description Type PDF
KSA539 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
KSA539 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
KSA539 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
KSA539CO Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539CR Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539CY Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539CYBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539CYTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539O Fairchild Semiconductor Low Frequency Amplifier Original PDF
KSA539OTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539R Fairchild Semiconductor Low Frequency Amplifier Original PDF
KSA539Y Fairchild Semiconductor Low Frequency Amplifier Original PDF
KSA539YBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539YTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
KSA539YTA_NL Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF

KSA539 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - KSC815

Abstract: No abstract text available
Text: KSA539CYTA KSA539OTA KSA539YBU KSA539CYBU Product status Full Production Full Production Full Production Full , KSA539 KSA539 Low Frequency Amplifier · · · · Complement to KSC815 Collector-Base Voltage , Rev. A1, June 2001 KSA539 Typical Characteristics -200 -180 1000 VCE = -1V IC[mA , Corporation Rev. A1, June 2001 KSA539 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N KSA539


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PDF KSA539 KSC815 400mW KSA539YTA KSA539CYTA KSA539OTA KSA539YBU KSA539CYBU
2001 - KSA539

Abstract: KSC815
Text: KSA539 KSA539 Low Frequency Amplifier · · · · Complement to KSC815 Collector-Base Voltage: VCBO = -60V Collector Power Dissipation: PC = 400mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon , Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA539 Typical Characteristics 1000 , Semiconductor Corporation Rev. A1, June 2001 KSA539 Package Demensions TO-92 +0.25 4.58 ±0.20


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PDF KSA539 KSC815 400mW KSA539 KSC815
KSA539

Abstract: No abstract text available
Text: KSA539 KSA539 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM: 0.4 1. EMITTER W (Tamb=25) 2. BASE Collector current ICM: -0.2 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=- 100µA , IE


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PDF KSA539 -150mA, -50mA KSA539
2000 - 7d471

Abstract: 1N4148 chip 250VAC CAP FAN REGULATOR KSA539 UF4007 KA5H0165RN FAN7564 FAN7563 1N5822 DIODE R18
Text: LDODRV LDO driving output. This is connected to the base of external TR ( KSA539 ) 9 ERROR LDO , the FAN7563: Tlow = -25°C, Thigh=85°C 2. Tested with KSA539 1 3. S = -R 4 mA mV FAN7563 , temperature range for the FAN7563: Tlow = -25°C, Thigh=85°C 2. Tested with KSA539 1 3. S = -R 6 , =100mA, with KSA539 ) 9 FAN7563/FAN7564 Mechanical Dimensions Package Dimensions in millimeters 8


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PDF FAN7563/FAN7564 FAN7563/FAN7564 FAN7563) FAN7564) FAN7564 7d471 1N4148 chip 250VAC CAP FAN REGULATOR KSA539 UF4007 KA5H0165RN FAN7563 1N5822 DIODE R18
KSA539

Abstract: No abstract text available
Text:  KSA539 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSC81S • Collector-Base Voltage VCeo = -60V • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -60 V Collector-Emitter Voltage VcEO -45 V Emitter-Base Voltage Vebo -5 V Collector Current lc -200 mA Collector Dissipation Pc 400 mW Junction , Classification H 0 Y hFE 40-80 70-140 120-240 61 ELECTRONICS m 7^^4142 QQ24bHQ tiBO KSA539 PNP EPITAXIAL


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PDF KSA539 KSC81S 400mW -10mA, 0024b41 KSA539
KSA539

Abstract: No abstract text available
Text: KSA539 LOW FREQUENCY AMPLIFIER · Complement to KSC8I5 · Collector-Base Voltage Vcao - -60V · Collector Dissipation Pc « 400mW PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TWaSTC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol Vcso Rating Unit V V VcEO Veso le Pc Tj T , KSA539 STATIC CHARACTERISTIC PNP EPITAXIAL SILICON TRANSISTOR BA ftM M TTBR ON VOLTAME v w (V t c


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PDF KSA539 400mW -10mA -150mA, -15mA KSA539
2001 - 7d471

Abstract: 1N4148 chip battery charger 48v 10A KA5H0165RN KA5H0165R UF4007 KSA539 FAN7564 FAN7563 1N5822
Text: connected to the base of external TR ( KSA539 ) 9 ERROR LDO dropout error flag. This keeps the error , KSA539 330k Vo 60.45k 20k 6 Ra Rb Co 10uF FAN7563/FAN7564 Typical , 14 16 Vcc[V] Figure 12. Start-up Characteristic (IO=100mA, with KSA539 ) 9 FAN7563


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PDF FAN7563/FAN7564 FAN7563/FAN7564 FAN7563) FAN7564) FAN7564 7d471 1N4148 chip battery charger 48v 10A KA5H0165RN KA5H0165R UF4007 KSA539 FAN7563 1N5822
2001 - KSC815

Abstract: KSC815Y KSC815YTA
Text: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator · Collector-Base Voltage : VCBO=60V · Complement to KSA539 · Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base , Optoelectronics [EMarkets and mail] q Collector-Base Voltage : V CBO =60V applications q Complement to KSA539 This


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PDF KSC815 KSA539 KSC815 KSC815Y KSC815YTA
2012 - ksa539

Abstract: No abstract text available
Text: KSA539 -0.2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 Low Saturation Medium Current Application. Complementary to KSC815 CLASSIFICATION OF hFE Product-Rank KSA539-R KSA539-O KSA539-Y Range 40~80 70~140 120~240 1 Emitter 2 Base 3 Collector Base 2 3 REF. Collector A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30


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PDF KSA539 KSC815 KSA539-R KSA539-O KSA539-Y 07-Dec-2012 -10mA, -50mA -150mA, -15mA ksa539
KSC815

Abstract: No abstract text available
Text: KSC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR · Complement to KSA539 · Collector-Base Voltage V c b o =60V NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25'C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol V cbo V ceo V ebo lc Rating 60 45 5 Unit V V V mA mW r Pc Tj T sto 200 400 150 -5 5 -1 5 0 V ELECTRICAL CHARACTERISTICS (TA


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PDF KSC815 KSA539 TA-25t: Saturati00 KSC815
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: KSA539-O KSA539-R KSA539-Y KSA542-G KSA542-O KSA542-R KSA542-Y KSA642-O KSA642-R KSA642-Y KSA643-G KSA643-O , Fairchild Device KSR1209 KSR1109 KSR1210 KSR1110 KSR1211 KSR1111 KSR1212 KSR1112 KSR1205 KSR1105 KSA539-O KSA539-R KSA539-Y KSA542-G KSA542-O KSA542-R KSA542-Y KSA642-O KSA642-R KSA642-Y KSA643-G KSA643-O KSA643-R , 2N7053 KSA733 KSA733 KSA733 KSA643 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA539 KSA733 KSA733 KSA733 KSA539 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA539 KSA643 KSA954 KSA733 KSA733 KSA643


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PDF
LB 122 transistor To-92

Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
Text: SAMSUNG SEMICONDUCTOR INC 14E D | 71b4142 OOObflSl 2 | KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • Complement to KSA539 • Collector-Base Voltage Vcao=i60V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage Vceo 60 V Collector-Emitter Voltage Vera 45 V Emitter-Base Voltage Vebo 5 V Collector Current lc 200 mA Collector Dissipation Pc 400 mW Junction Temperature Ti 150 °C Storage Temperature Tstg


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PDF 71b4142 KSC815 KSA539 LB 122 transistor To-92 LB 122 NPN TRANSISTOR LB 122 transistor KSA539 L300 samsung l300 TRANSISTOR A52
2010 - ksa539

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSC815 TRANSISTOR (NPN) 1.EMITTER FEATURES Low Collector Current Complement To KSA539 Low Frequency Amplifier & High Frequency Oscillator 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC


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PDF KSC815 KSA539 150mA ksa539
1998 - Not Available

Abstract: No abstract text available
Text: KSA539 LOW FREQUENCY AMPLIFIER · Complement to KSC8l5 · Collector-Base Voltage VCBO = -60V · Collector Dissipation PC = 400mW PNP EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ T STG ) Unit V V V mA mW Rating -60 -45 -5 -200 400 150 -55 ~ 150 1. Emitter 2. Base 3


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PDF KSA539 400mW
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSA539 TRANSISTOR (PNP) 1.EMITTER FEATURES Low Saturation Medium Current Application Complement to KSC815 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.2 A


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PDF KSA539 KSC815 -10mA -50mA -150mA -15mA -10mA
2SC815

Abstract: KSA539 VCBO-60V 2sc815 1FT2
Text: Transistors 2SC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • Complement to KSA539 • Collector-Base Voltage VCBo =60V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 60 V Collector-Emitter Voltage VcEO 45 V Emitter-Base Voltage Vebo 5 V Collector Current lc 200 mA Collector Dissipation Pc 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55-150 °C USHA (INDIA) LTD 1. Emitter 2. Base 3. Collector STATIC


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PDF 2SC815 KSA539 250pA 2SC815 KSA539 VCBO-60V 2sc815 1FT2
2013 - KSC815

Abstract: ksa539
Text: KSC815 0.2A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low Collector Current Complementary To KSA539 Low Frequency Amplifier & High Frequency Oscillator CLASSIFICATION OF hFE Product-Rank KSC815-R KSC815-O KSC815-Y KSC815-G Range 40~80 70~140 120~240 200~400 1Emitter 2Base 3Collector Collector 3 2 REF. Base A B C D E


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PDF KSC815 KSA539 KSC815-R KSC815-O KSC815-Y KSC815-G 26-Dec-2012 150mA, KSC815 ksa539
Not Available

Abstract: No abstract text available
Text: KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • Com plement to KSA539 •C o llecto r-B ase Voltage Vcso=60V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO 60 45 5 200 400 150 -5 5 -1 5 0 V V V mA mW °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VcEO V ebo lc Pc Tj Tstg °c


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PDF KSC815 KSA539 DG24714
1999 - KSC815

Abstract: KSA539
Text: KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 · Complement to KSA539 · Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Rating Unit 60 45 5 200 400 150 -55 ~ 150 V V V mA mW °C °C


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PDF KSC815 KSA539 KSC815 KSA539
KSA539

Abstract: KSA542
Text:  KSA539 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSC8I5 • Collector-Base Voltage Vcbo = -60V • Collector Dissipation Pc = 400mW ABSOLUTE MAXIMUM RATINGS (TA=25TC) Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage VcEO -45 V Emitter-Base Voltage Vebo -5 V Collector Current lc -200 mA Collector Dissipation Pc 400 mW Junction Temperature Tj 150 r Storage Temperature Tstg -55 - 150 x: ELECTRICAL CHARACTERISTICS (Ta


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PDF KSA539 400mW -100jà -10mA, KSA539 KSA542
2001 - Not Available

Abstract: No abstract text available
Text: the base of external TR ( KSA539 ) LDO dropout error flag. This keeps the error signal off until the , IREF MONIT 100nF GND CHAFB ERROR LDODRV 100k KSA539 330k 60.45k 20k Ra Vo Co 10uF Rb , Figure 12. Start-up Characteristic (IO=100mA, with KSA539 ) 9 FAN7563/FAN7564 Mechanical


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PDF FAN7563/FAN7564 FAN7564) FAN7564 FAN7563/FAN7564 FAN7563) FAN7563DTF AN-4110:
2000 - 7D471

Abstract: 250VAC CAP FAN REGULATOR K5A539 332 1KV fairchild opto 400v 10uF KA539
Text: KSA539 1 3. S = -R 4 FAN7563/FAN7564 Electrical Characteristic (Continued) (FAN7564) (VCC = , FAN7563: Tlow = -25°C, Thigh=85°C 2. Tested with KSA539 1 3. S = -R 6 FAN7563/FAN7564 Typical


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PDF FAN7563/FAN7564 FAN7564) FAN7564 FAN7563/FAN7564 FAN7563) 7D471 250VAC CAP FAN REGULATOR K5A539 332 1KV fairchild opto 400v 10uF KA539
2002 - Not Available

Abstract: No abstract text available
Text: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Value 60 Collector-Base Voltage Units V V VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage


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PDF KSC815 KSA539
KSC815

Abstract: No abstract text available
Text: KSB1116 KSA707 KSA539 SS9015 lc lB MAX (mA) (mA) 100 10 300 100 10 400 300 30 400 1000 50 240 500 50


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PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 BCW31 O-92S KSA1150 KSA1378 KSC815
KSC3488

Abstract: KSC853 KSA953 KSC815
Text: KSP8598 KSP55 KSA953 KSA545 KSB1116 KSA707 KSA539 SS9015 80 80 80 60 60 60 60 60 60 60 50 45 45 45


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PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 BCW31 O-92S KSC3488 KSC853 KSA953 KSC815
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