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KMZ10B,112 KMZ10B/SOT195/TUBE-BULK// KMZ10B,112 ECAD Model
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Philips Semiconductors
KMZ10B INSTOCK KMZ10B ECAD Model
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KMZ10B datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
KMZ10B KMZ10B ECAD Model Philips Semiconductors Magnetic field sensor Original PDF
KMZ10B KMZ10B ECAD Model Philips Semiconductors Magnetic Field Sensor Original PDF
KMZ10B KMZ10B ECAD Model Philips Semiconductors Magnetic Field Sensor Original PDF
KMZ10B KMZ10B ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
KMZ10B KMZ10B ECAD Model Philips Components Datasheet Library 1989 Scan PDF
KMZ10B KMZ10B ECAD Model Philips Semiconductors Magnetic field sensor Scan PDF
KMZ10B,112 KMZ10B,112 ECAD Model NXP USA Sensors, Transducers - Magnetic Sensors - Linear, Compass (ICs) - SENSOR LINEAR ANALOG SOT195 Original PDF

KMZ10B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
KMZ10B

Abstract: SOT195 Magnetic Field Sensor 0032L
Text: Philips Semiconductors 0032L.3L 245 HAPX Product specification Magnetic field sensor KMZ10B i—— N AMER PHIL IPS/DISCRETE b^E D DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. Its properties enable this sensor to be used , bbS3T31 QG35b37 lôl ■APX Product specification Magnetic field sensor KMZ10B - N AMER PHILIPS/DISCRETE , sensor - N AI1ER PHILIPS/DISCRETE bRE 1> KMZ10B Hx (kA/m) in applications with H„ < 3 kA/m, the


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PDF 0032L KMZ10B KMZ10B 7Z81990 bbS3T31 OT195. SOT195 Magnetic Field Sensor
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION , Product specification Magnetic field sensor KMZ10B LIMITING VALUES In accordance with the , Semiconductors Product specification Magnetic field sensor KMZ10B THERMAL CHARACTERISTICS SYMBOL , sensor KMZ10B MGD802 In applications with Hx < 3 kA/m, the sensor has to be reset, after , of sensor chip. Fig.7 Outline of KMZ10B (SOT195). 1996 Nov 08 99 04 min


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PDF KMZ10B OT195)
KMZ10B

Abstract: No abstract text available
Text: Philips Components kmziob _A_ MAGNETIC FIELD SENSOR The KMZ10B is a sensitive magnetic field sensor employing the magneto-resistive effect of thin film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters , dimensions uncontrolled within this area. 7Z95121.1F PHILIPS May 1988 KMZ10B _/ V RATINGS Limiting , application of an auxiliary field Hx = 3 kA/m. May 1988 PHILIPS Magnetic field sensor KMZ10B V_ Fig. 2


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PDF KMZ10B 7Z94007
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors b b s a 'm Q D 3 2 fc.3 b 245 M A P X Product specification KMZ10B Magnetic field sensor . N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PIN CONFIGURATION The KMZ10B is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film , sensor - N AMER PHILIPS/DISCRETE Product specification KMZ10B b'lE D - , sensor - N AUER PHILIPS/DISCRETE Product specification KMZ10B bRE 1 _


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PDF KMZ10B KMZ10B bbS3T31 OT195.
KMZ51

Abstract: LM532 kmz51 philips Philips application note using kmz51 Sensors handbook gravity sensor KMZ10C Application Note KMZ10A application note KMZ10B KMZ10
Text: +0.05 9 22.0 1.3 Yes KMZ10B SOT195 -2.0 to +2.0 12 4.0 2.1 Yes , typical KMZ10B sensor. The data sheets show also the spread in this variation due to manufacturing , .8 Bridge resistance of a KMZ10B sensor as a function of ambient temperature. 19 Philips , voltage of a KMZ10B sensor as a function of transverse field `Hy' for several temperatures. 1998 Jun , operating range 75 4 2 0 2 H y (kA/m) 4 Fig.10 Output voltage `Vo' of a KMZ10B sensor


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PDF KM110BH/2270 MGG457 KM110BH/22/70 KMZ10B MGG458 KMZ10B KMZ51 LM532 kmz51 philips Philips application note using kmz51 Sensors handbook gravity sensor KMZ10C Application Note KMZ10A application note KMZ10
1998 - MGD806

Abstract: KMZ10B MGD802 SOT195 MLC716 SC17 ka band sensor MGD803
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D329 KMZ10B Magnetic field sensor , Mar 31 Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of , 31 2 Philips Semiconductors Product specification Magnetic field sensor KMZ10B , . 1998 Mar 31 3 Philips Semiconductors Product specification Magnetic field sensor KMZ10B


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PDF M3D329 KMZ10B KMZ10B SCA58 115106/00/03/pp8 MGD806 MGD802 SOT195 MLC716 SC17 ka band sensor MGD803
1996 - KMZ10A application note

Abstract: KMZ10B KMZ10A SCA52 MLC716 SC17 MGD802 circuit 4466 permalloy 48
Text: order number: 9397 750 01132 DISCRETE SEMICONDUCTORS DATA SHEET KMZ10B Magnetic field , 1996 Nov 08 Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of , Semiconductors Product specification Magnetic field sensor KMZ10B LIMITING VALUES In accordance with , Semiconductors Product specification Magnetic field sensor KMZ10B THERMAL CHARACTERISTICS SYMBOL


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PDF KMZ10A KMZ10A SCA52 147021/1200/02/pp8 KMZ10A application note KMZ10B SCA52 MLC716 SC17 MGD802 circuit 4466 permalloy 48
1998 - KMZ51

Abstract: LM532 kmz51 philips KMZ10C Application Note kmz51 compass Philips application note using kmz51 KMZ10B gravity sensor compass philips KMZ10A application note
Text: +0.05 9 22.0 1.3 Yes KMZ10B SOT195 -2.0 to +2.0 12 4.0 2.1 Yes , typical KMZ10B sensor. The data sheets show also the spread in this variation due to manufacturing , .8 Bridge resistance of a KMZ10B sensor as a function of ambient temperature. 7 Philips , voltage of a KMZ10B sensor as a function of transverse field `Hy' for several temperatures. 1998 Jun , operating range 75 4 2 0 2 H y (kA/m) 4 Fig.10 Output voltage `Vo' of a KMZ10B sensor


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PDF KM110BH/2270 MGG457 KM110BH/22/70 KMZ10B MGG458 KMZ10B KMZ51 LM532 kmz51 philips KMZ10C Application Note kmz51 compass Philips application note using kmz51 gravity sensor compass philips KMZ10A application note
KMZ51

Abstract: 4011bt KMZ52 kmz51 compass KMZ10 KMZ10C Application Note kmz51 philips KMZ10B Philips application note using kmz51 KMZ51 application
Text: SENSOR TYPE KMZ10B SOT195 -2.0 to +2.0 12 4.0 2.1 Yes KMZ10C SOT195 -7.5 , . the permalloy) for a typical KMZ10B sensor. The data sheets show also the spread in this variation , .8 7 0 40 80 120 160 Tamb ( oC) Bridge resistance of a KMZ10B sensor as a function of , 2 3 H y (kA/m) Output voltage `Vo' as a fraction of the supply voltage of a KMZ10B sensor as a , 0 2 H y (kA/m) 4 Fig.10 Output voltage `Vo' of a KMZ10B sensor as a function of


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PDF MLC141 KMZ51 4011bt KMZ52 kmz51 compass KMZ10 KMZ10C Application Note kmz51 philips KMZ10B Philips application note using kmz51 KMZ51 application
2004 - KMZ10

Abstract: KMZ51 KMZ10B KMZ52 Philips application note using kmz51 kmz51 compass Anisotropic magnetoresistance compass KMZ10C KTY81-110 APPLICATION "internal combustion engine"
Text: SENSOR TYPE KMZ10B SOT195 -2.0 to +2.0 12 4.0 2.1 Yes KMZ10C SOT195 -7.5 , . the permalloy) for a typical KMZ10B sensor. The data sheets show also the spread in this variation , .8 7 0 40 80 120 160 Tamb ( oC) Bridge resistance of a KMZ10B sensor as a function of , 2 3 H y (kA/m) Output voltage `Vo' as a fraction of the supply voltage of a KMZ10B sensor as a , 0 2 H y (kA/m) 4 Fig.10 Output voltage `Vo' of a KMZ10B sensor as a function of


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PDF MBH619 KMZ10 KMZ51 KMZ10B KMZ52 Philips application note using kmz51 kmz51 compass Anisotropic magnetoresistance compass KMZ10C KTY81-110 APPLICATION "internal combustion engine"
OT195

Abstract: LEM sensor CURRENT KMZ10B 645 LEM
Text: DISC RETE S E M IC O N D U C TO R S ©ATA S&flEET KMZ10B Magnetic field sensor Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 31 Philips , i c field s e n s o r KMZ10B DESC RIPTIO N The KMZ1 OB is a sensitive m agnetic field sensor , Magnetic field sensor KMZ10B 20 Hd (kA/m ) IS . \ V, \ '\ \ \ V 11 10 Hy > 1 kA/m (2 , tic s in g le -e n d e d fla t p a c k a g e ; 4 in -lin e le ad s KMZ10B SOT195 4 mm scale


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PDF KMZ10B 15106/00/03/pp8 OT195 LEM sensor CURRENT KMZ10B 645 LEM
1998 - 41a Hall Effect Magnetic Sensors

Abstract: 41a hall sensor car Speed Sensor KMZ10B PM6654 car Speed Sensor circuit diagram KMI10/1 eddy current KMZ10 ABS Wheel Speed Sensor
Text: between the primary output signal (i.e. with no signal conditioning electronics) of a KMZ10B sensor , 4 Typical relationship between the airgap of a KMZ10B sensor, with a back biasing magnet (8 mm , family, which comprises a magnetoresistive sensor (an adapted version of the KMZ10B ), a ferrite , 4 shows typical KMZ10B sensor output signal values, with back-biasing magnet), with different , ( KMZ10B with a back biasing magnet) was measured with the sensor placed at a distance of 0.5 mm from the


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PDF MGG481 MGG482 MGG483 MGG484 41a Hall Effect Magnetic Sensors 41a hall sensor car Speed Sensor KMZ10B PM6654 car Speed Sensor circuit diagram KMI10/1 eddy current KMZ10 ABS Wheel Speed Sensor
KMZ10B

Abstract: Magnetic Field Sensor MLC716 magnetic sensor circuit diagram MGD802 Thin-film magnetic resistance SOT195 MSA927 msa-927 MAGNETIC PROXIMITY SENSOR application note
Text: Philips Semiconductors Product specification Magnetic field sensor DESCRIPTION The KMZ10B is a sensitive m agnetic field sensor, em ploying the m agnetoresistive effect of thin-film perm alloy. Its properties enable this sensor to be used in a w ide range of applications fo r current and field m easurem ent, revolution counters, angular or linear position m easurem ent, proxim ity detectors, etc. KMZ10B MM M G D 806 PINNING PIN 1 2 3 4 SYMBOL +V 0 GND -V 0 V cc DESCRIPTION


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PDF KMZ10B KMZ10B Magnetic Field Sensor MLC716 magnetic sensor circuit diagram MGD802 Thin-film magnetic resistance SOT195 MSA927 msa-927 MAGNETIC PROXIMITY SENSOR application note
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification Sensors Index Types added to the range since the last issue ot data handbook SCI 7 (1995) are shown in bold print. TYPE PA G E TYPE PA G E KM110B/2 80 KTY82-120 270 KMZ10A 84 KTY82-121 270 KMZ10A1 89 KTY82-122 270 KMZ10B 95 KTY82-150 270 KMZ10C 100 KTY82-151 270 KMZ11B1 105 KTY82-152 270 KMZ41 110 KTY82-210 280 K M Z50 114 KTY82-220 280


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PDF KM110B/2 KTY82-120 KMZ10A KTY82-121 KMZ10A1 KTY82-122 KMZ10B KTY82-150 KMZ10C KTY82-151
"Angle Sensor"

Abstract: KMZ11B1 KMZ10B Angle Sensor scale sensor KMZ10 kmz110b
Text: is a ready-trimmed (sensitivity and zero point) combination of the magnetoreslstlve sensor KMZ10B and , in the sensitive layer of the KMZ10B sensor, unless otherwise specified. SYMBOL PARAMETER CONDITIONS


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PDF KM110BH/2270 KMZ10B KMZ110BH/2270 "Angle Sensor" KMZ11B1 Angle Sensor scale sensor KMZ10 kmz110b
41a hall sensor

Abstract: 41a Hall Effect Magnetic Sensors KMZ10B eddy current braking system PM6654 41a hall sensor 125 kmi Sensor KMI10/1 KMZ10 crankshaft position sensor
Text: no signal conditioning electronics) of a KMZ10B sensor (with a back biasing magnet) and various , KMZ10B sensor, with a back biasing magnet (8 mm x 8 mm x 4.35 m, used eg for KMI15/1), and target , family, which comprises a magnetoresistive sensor (an adapted version of the KMZ10B ), a ferrite , achieved with a sensor signal level of 6 mV peak-to-peak. Figure 4 shows typical KMZ10B sensor output , these measurements, the output signal of the sensor ( KMZ10B with a back biasing magnet) was measured


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PDF MGG481 MGG482 MGG483 MGG484 41a hall sensor 41a Hall Effect Magnetic Sensors KMZ10B eddy current braking system PM6654 41a hall sensor 125 kmi Sensor KMI10/1 KMZ10 crankshaft position sensor
KMZ10B

Abstract: MSA103 KMZ10 SOT195
Text: Philips Semiconductors bbS3«ì31 0032b24 553 I APX Product specification Magnetic field sensor DESCRIPTION The KM110B/1 is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The combination of a KMZ10B with a Ferroxdure 100 magnet and a special 30 ° magnetization enables the sensor to be used as a revolution sensor or proximity detector. The , DATA KM110B/1 N AMER PHILIPS/DISCRETE bRE ]> PIN CONFIGURATION cc ground Marking: KMZ10B PHDxx


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PDF 0032b24 KM110B/1 KMZ10B KM110B/1 MGA102 0032b27 OT195. MSA103 KMZ10 SOT195
SOT195

Abstract: KMZ10B KMZ10C SOT195
Text: ] KMZ10C/B 1,5 -7,5 . +7,5 1 . 1,8 10 KMZ10B /B 4 -2 . +2 1,6 . 2,6 12 KMZ10A/B 16 -0,5 . 0


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PDF OT195 KMZ10C/B KMZ10B/B KMZ10A/B SOT195 KMZ10B KMZ10C SOT195
M80062

Abstract: kmz110b Sm2CO17 philips hybrid scale sensor lte in philips KMZ10B HYBRID SEMICONDUCTORS Angle Sensor MBD064
Text: ) combination of the magnetoresistive sensor KMZ10B and a signal conditioning circuit in hybrid technology. The , in the sensitive layer of the KMZ10B sensor, unless otherwise specified. SYMBOL PARAMETER CONDITIONS


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PDF 003270M KM110BH/2270 KMZ10B KMZ110BH/2270 M80062 kmz110b Sm2CO17 philips hybrid scale sensor lte in philips HYBRID SEMICONDUCTORS Angle Sensor MBD064
Brain wave signal sensor

Abstract: KMZ10C Sm2CO17 MLC127 KMZ10C Application Note UZZ9000 Sensors handbook KMZ10B KMZ10 Sm2Co17-magnets
Text: angle deg. MBH659 KMZ10B Fig.4 Angle measurement with a KMZ10B. 1997 Jan 09 180 , KMZ10B sensor and is available in two types: the KM110BH/2130 and KM110BH2190. They are both based on


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SOD70 package

Abstract: KTY82/120/DG/B2,21
Text: Philips Semiconductors Semiconductor sensors Selection guide MAGNETIC FIELD SENSORS SENSITIVITY TYPE(') FIELD RANGE (kA/m) KM110B/2; note 2 -2.2 to +2.2 3.6 KMZ10A -0.5 t o +0.5 BRIDGE RESISTANCE (k£2) 16 KMZ10A1; note 3 mV/V kA/m PACKAGE PAGE 2.1 1.2 SOT 195 80 84 SOT195 -0.05 to +0.05 22 1.3 -2.0 to +2.0 4 2.1 SOT195 SOT195 89 KMZ10B KMZ10C -7.5 to +7.5 1.4 SOT 195 100 95 -2.0 to +2.0


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PDF KM110B/2; KMZ10A KMZ10A1; OT195 KMZ10B KMZ10C KMZ41 KMZ50 SOD70 package KTY82/120/DG/B2,21
KMZ51

Abstract: KTY84 SOT195 221 sot23 SOD70 KMZ10A kty81 218 SOD80 KMZ11B1 LM3661TL-1.25
Text: Philips Semiconductors Semiconductor sensors Selection guide MAGNETIC FIELD SENSORS TYPE(1) FIELD RANGE (kA/m) SENSITIVITY mV / V -kA / m BRIDGE RESISTANCE (k) PACKAGE PAGE -0.5 to +0.5 16 1.2 SOT195 80 -0.05 to +0.05 22 1.3 SOT195 85 KMZ10B -2.0 to +2.0 4 2.1 SOT195 91 KMZ10C -7.5 to +7.5 1.5 1.4 SOT195 96 KMZ11B1 -0.2 to +0.2 4 2.1 SOT96 (SO8) - KMZ41 H = 100; note 3


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PDF OT195 KMZ10B KMZ10C KMZ11B1 KMZ41 KMZ50 KMZ51 KMZ51 KTY84 SOT195 221 sot23 SOD70 KMZ10A kty81 218 SOD80 KMZ11B1 LM3661TL-1.25
1998 - PT100 temperature sensor data sheet

Abstract: KTY 10-8 KTY temperature sensor microcontroller KTY81-110 ptc and ntc temperature sensor using arm KTY 110 TI to 92 ptc sensor KTY81-210 smd KTY84 kty81 application note
Text: amplification is: In many events, as with the magnetoresistive sensor KMZ10B , the temperature drift is , - . RA + RB + RT Offset VS handbook, full pagewidth R1 RS ampl. R7 R3 KMZ10B , R5 R1 RA VO OP3 R6 R4 R13 offset RB R3 R7 R9 OP2 R11 KMZ10B R2 MLC145 Example: A = 50 (typ.), TCA = 0.004 K-1. Fig.18 KMZ10B evaluation circuit with


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PDF KTY81 KTY85 DO-34) KTY83, KTY82 PT100 temperature sensor data sheet KTY 10-8 KTY temperature sensor microcontroller KTY81-110 ptc and ntc temperature sensor using arm KTY 110 TI to 92 ptc sensor KTY81-210 smd KTY84 kty81 application note
1993 - analog sensor 1166

Abstract: kmz110b "Angle Sensor" smd 4549 SMD M1B KMZ10B KMZ11B1 SC17 Sm2CO17
Text: ) combination of the magnetoresistive sensor KMZ10B and a signal conditioning circuit in hybrid technology , magnetic field Hext = 100 kA/m in the sensitive layer of the KMZ10B sensor, unless otherwise specified


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PDF KM110BH/2270 SCD25 analog sensor 1166 kmz110b "Angle Sensor" smd 4549 SMD M1B KMZ10B KMZ11B1 SC17 Sm2CO17
Sensor Interface Philips

Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Rotational speed sensor with direction recognition FEATURES · Contactless rotational speed sensing · Direction recognition capability · Easy to mount, ready for use · Digital output current signal · Operating temperatures up to 125 °C · EMC resistant. DESCRIPTION The KM110BH/32 sensor detects rotational speed and direction. The sensor comprises a magnetoresistive sensor element, KMZ10B , a signal conditioning circuit in hybrid technology and a permanent magnet


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PDF KM110BH/32 KMZ10B, KM110BH/32 KM110BH/32. Sensor Interface Philips
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