The Datasheet Archive

KM44C258 datasheet (13)

Part Manufacturer Description Type PDF
KM44C258 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
KM44C258AJ-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AJ-12 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AJ-8 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AP-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AP-12 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AP-8 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AZ-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AZ-12 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258AZ-8 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258C-6 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258C-7 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
KM44C258C-8 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

KM44C258 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TL555

Abstract:
Text: SAMSUNG SEMICONDUCTOR INC Tfl DEj| 7Tti4145 0 0 0 5 5 0 7 Í XT ^^ . 4 ' ' ' ' PRELIMINARY SPECIFICATION " 5 'Z 7 ,-t'l /r f V U -'Z KM44C256/ KM44C258 256KX4 Bit CMOS Dynamic RAM FEATURES · Performance range: tR AC KM44C256/8-10 KM44C256/8-12 100ns 120ns tcAC 25ns 35ns tno 190ns 220ns , Mode and the KM44C258 features Static Column Mode which allow high speed random access o f memory cells , operation- KM44C258 1CAS-before-RAS refresh 1 RAS-only and Hidden refresh 1TTL compatible inputs and


OCR Scan
PDF 7Tti4145 KM44C256/KM44C258 256KX4 KM44C256/8-10 KM44C256/8-12 100ns 120ns 190ns 220ns KM44C256/8 TL555 TL 555 KM44C256 KM44C258 IC 555 pin DIAGRAM samsung 256Kx4 static RAM
toshiba 32k*8 sram

Abstract:
Text: MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Org. X X FUNCTION GUIDE Density 64 K 256K Mode Page F. Page Nibble S. Column Samsung KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 Toshiba Hitachi Fujitsu NEC Okl MSM3764 1 1 TC51256 TC51257 HM51256 MB81256 MB81257 MB81258 MB81464 MB81466 uPD41256 MSM51C256 MSM41257 TC51258_ HM51258 TC51464 TC51466 TC511000 TC511001 T


OCR Scan
PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A TC511000 MB832001 M5M23C400 HITACHI 64k DRAM M5M51000 MCM518128
al 232 nec

Abstract:
Text: MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 CROSS REFERENCE GUIDE Mode F.Page Nibble S. Column Samsung KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 KM48C512 KM49C512 KM416C256 KM418C256 KM41C16000 KM44C4000 KM48C2000 KM416C1000 Toshiba TC51256 TC51257 TC51258 TC51464 TC51466 TC511000 TC511001 TC511002 TC514256 TC514258 TC514100 TC514101 TC514102 TC514400 TC514402 TC514800A


OCR Scan
PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 NM9307 HN28C256 TC5116100 oki cross reference
sun hold RAS 0610

Abstract:
Text: KM44C256 KM44C258 TMS4C1024 TMS4C1025 TMS4C1027 TMS44C256 TC511000A TC511001A TC511002A


OCR Scan
PDF A16685-7 EMTR1147 sun hold RAS 0610 M5M41000 Motorola transistor 7144 MSC2304 oki Logic
Not Available

Abstract:
Text: tRc = min.) KM44C258B- 7 KM44C258B- 8 KM44C258B-10 Icc3 Static Column Mode Current (RAS = CS = ViL, Address Cycling @ tsc=m in.) > KM44C258B- 7 KM44C258B- 8 KM44C258B-10 lcC4 â , and CS Cyling @ tR = mln.) c KM44C258B- 7 KM44C258B- 8 KM44C258B-10 Input Leakage Current , 150ns KM44C258B-10 • • • • • • • • • 70ns 100ns 25ns 180ns , 8 KM44C258B-10 Min — 2 mA 80 70 60 mA mA mA 65 55 45 mA mA mA


OCR Scan
PDF 0Q10125 KM44C258B KM44C258B KM44C258B- 130ns 150ns KM44C258B-10 100ns 180ns
LC324256-10

Abstract:
Text: 150 15 195 4. 5—5. 5 60 2/1 0.8 2.4 6 0.4/4.2 2.4/5 7 512/8 KM44C258C-6 SAM 0—70 50 110 20 15 40 110 15 155 4. 5—5. 5 70 2/1 0.8 2.4 6 0.4/4. 2 2. 4/5 7 512/8 KM44C258C-7 SAM 0—70 70 130 20 15 50 130 15 175 4. 5-5. 5 65 2/1 0.8 2.4 6 0.4/4.2 2.4/5 7 512/8 KM44C258C-8 SAM 0—70 80 150 20 15 , . 2 2.4/5 7 512/8 FAST PACE MODE KM44C258AP /J/Z-10 SAM 0—70 100 180 25 20 70 180 20 245 4. 5—5. 5 65 2/1 0.8 2.4 7 0. 4/4. 2 2. 4/5 7 512/8 STATIC COLUMN MODE KM44C258AP /J/Z-12 SAM 0—70 120 220 25


OCR Scan
PDF HY51C4258L-12 HY51C4258L-85 HY534256-10 LC324256PL/JL/ZL-T0 LC324256PL/JL/ZI-80 LH604256D/K/Z- LH604256D/K/Z-80A LH64256/Z/K-10 LH64256/Z/K-12 LC324256-10 lh64256 HY534256-60 LC324256-12 514258 km44c256c KM44C256C-6 Z80A KM44C256J-12
KM41C1000BJ

Abstract:
Text: 20 Pin SOJ 20 Pin ZIP I I KM44C266BZ KM44C258BP KM44C258BJ KM44C258BZ KM44C268BP KM44C268BJ


OCR Scan
PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP km4164 KM75C01AJ KM41C464Z
KM44C258

Abstract:
Text: output. This is true even if a new RAS cycle occurs (as in hidden refresh). Each o f the KM44C258C


OCR Scan
PDF KM44C1002B 110ns 130ns 150ns KM44C1002B 576x4 TheKM44C1002B 20-LEAD KM44C258 KM44C1002BV
Not Available

Abstract:
Text: even if a new RAS cycle occurs (as in hidden refresh). Each of the KM44C258C operating cycles is


OCR Scan
PDF KM44C1002B KM44C1002B 576x4 KM44C1002B-6 110ns KM44C1002B-, 130ns KM44C1002B-8 150ns 20-LEAD
KM424C256Z

Abstract:
Text: KM44C266CZ KM44C26I3CV KM44C266CVR KM44C26I5CT KM44C26BCTR KM44C258CP KM44C25ÍICJ KM44C25HCZ KM44C25ÍICV


OCR Scan
PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z PB20 KM64258 KM41C464 KM41C4000BJ KM23C4000A KM23C2 KM68512 KMM5362000
KM424C256Z

Abstract:
Text: MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KM41C464J KM41C464Z KM41C466P KM41C466J KM41C466Z 1M bit KM41C1000BP KM41C1000BJ KM41C1000BZ KM41C1000BLP KM41C1000BLJ KM41C1000BLZ KM41C1001 BP KM41C1001BJ KM41C1001BZ KM41C1002BP KM41C1002BJ KM41C1002BZ KM44C256BP KM44C256BJ KM44C256BZ KM44C256BLP KM44C256BLJ KM44C256BLZ KM44C266BP KM44C266BJ KM44C266BZ KM44C258BP KM44C258BJ KM44C258BZ


OCR Scan
PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z KM44C256bp SIMM 30-pin 30-pin SIMM RAM KM41C1000BJ 30-pin simm memory "16m x 8" KM41C4001AZ KM41C464P 257J
Not Available

Abstract:
Text: Performance range: tu e KM44C258C-6 KM44C258C-7 KM44C258C-8 60ns 70ns 80ns tcAc 15ns tRC GENERAL , Current (ftAS and CS Cycling @ tR C= min.) KM44C258C-6 KM44C258C-7 KM44C258C-8 KM44C258C-6 KM44C258C-7 KM44C258C-8 KM44C258C-6 KM44C258C-7 KM44C258C-8 KM44C258C-6 KM44C258C-7 KM44C258C-8 Symbol Min Max , column mode cycle time V cc = 5 .0 V ± 10% , See notes KM44C258C-6 1, 2) KM44C258C-7 Min 130 , KM44C258C-7 Min 15 55 80 35 5 Max KM44C258C-8 Unit Notes Min 15 60 90 40 5 Max ns ns ns ns ns 40 ns ns ns


OCR Scan
PDF KM44C258C 144x4 KM44C258C-6 KM44C258C-7 KM44C258C-8 KM44C258C 20-LEAD
km44c258

Abstract:
Text: vanced CMOS process. KM44C258C-6 KM44C258C-7 KM44C258C-8 60ns 70ns 80ns · Static Column Mode , Current (RÄ3 = C5 = V ih) KM44C258C-6 KM44C258C-7 KM44C258C-8 70 65 60 2 70 65 60 55 50 45 mA mA , h , RAS, Address Cycling @ t Rc = min.) KM44C258C-6 KM44C258C-7 KM44C258C-8 KM44C258C-6 KM44C258C-7 KM44C258C-8 KM44C258C-6 KM44C258C-7 KM44C258C-8 ICC3 E Static Column Mode Current (RAS , 5.0V ± 10%, See notes 1, 2) KM 44C258C-6 Symbol Min Max M in Max Min Max KM44C258C-7 KM44C258C-8 Unit


OCR Scan
PDF KM44C258C 110ns 130ns 150ns KM44C258C 144x4 20-LEAD km44c258 KM44C258cz
KM41C4000BJ

Abstract:
Text: KM44C266CZ KM44C266CV KM44C266CVR KM44C266CT KM44C266CTR KM44C258CP KM44C258CJ KM44C258CZ KM44C258CV KM44C258CVR KM44C258CT KM44C258CTR KM44C268CP KM44C268CJ KM44C268CZ KM44C268CV KM44C268CVR KM44C268CT


OCR Scan
PDF KM41C1002CVR KM41C1002CT KM41C1002CTR KM44C256CP KM44C256CJ KM44C256CZ KM44C256CV KM44C256CVR KM44C256CT KM44C256CTR KM41C4000BJ 256k x 4
samsung pram

Abstract:
Text: D H 7^b414S QOlOlDa 5 ■SMGK KM44C258BL CMOS DRAM TIMING DIAGRAMS (Continued) RAS-ONLY REFRESH


OCR Scan
PDF KM44C256BL HSF16K 256KX4 KM44C256BL- 130ns 150ns KM44C256BL-10 100ns 180ns samsung pram t03h KM44C256BL Scans-0014168 T462
Not Available

Abstract:
Text: CHARACTERISTICS (Recommended operating conditions unless otherwise noted) KM44C258C-6 KM44C258C-7 KM44C258C-8 , §, Address Cycling ©tnc = min.) KM44C258C-6 KM44C258C-7 KM44C258C-8 IC 3 C Static Column Mode Current (RAS = C5 = Vil, Address Cycling @tpc = min.) KM44C258C-6 KM44C258C-7 KM44C258C-8 Ic04 , V,h) Units 70 65 60 Icci Max KM44C258C-6 KM44C258C-7 KM44C258C-8 70 65 60 , KM44C258C-7 70ns 20ns 130ns KM44C258C-8 80ns 20ns 150ns Static Column Mode operation


OCR Scan
PDF KM44C258C 144x4 KM44C258C 110ns KM44C258C-7 130ns KM44C258C-8 150ns 20-LEAD
PE 8001A

Abstract:
Text: KM44C258CP KM44C258CJ KM44C258CZ KM44C258CV KM44C258CVR KM44C258CT KM44C258CTR KM44C268CP KM44C268CJ


OCR Scan
PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 km41c256 KM68512 TFK 001 TFK 805
KM44C256B-10

Abstract:
Text: Performance range: tflAC KM44C258B- 7 KM44C258B- 8 KM44C258B-10 70ns 80ns 100ns tcAC 20ns 20ns 25ns I tRC , 8 KM44C258B-10 lc C 2 - KM44C258B- 7 KM44C258B- 8 KM44C258B-10 = min.) KM44C258B- 7 KM44C258B- 8 KM44C258B-10 Icc3 - t Sc Ic c 4 S tandby C urrent (RAS = CS = V cc - 0.2V) C S-Before-R AS R efresh C urrent (RAS and CS C yling @ t R C = min.) KM44C258B- 7 KM44C258B- 8 KM44C258B-10 , - PIN CONFIGURATION · KM44C258BP {Top Views) KM44C258BJ KM44C256BZ C5-w CO NTRO L & C


OCR Scan
PDF KM44C258B KM44C258B- KM44C258B-10 100ns 130ns KM44C258B 20-LEAD KM44C256B-10 km44c256bz
km44c258

Abstract:
Text: DESCRIPTION I rac t c A C 20ns 25ns 30ns ta 150ns 180ns 220ns KM44C258A-8 KM44C258A-10 KM44C258A-12 · , HIGH VOLTAGE LEVEL (l0H= -5m A) OUTPUT LOW VOLTAGE LEVEL (Idi. = 4.2mA) "Note: KM44C258A-8 KM44C258A-10 KM44C258A-12 KM44C258A-8 KM44C258A-10 KM44C258A-12 KM44C258A-8 KM44C258A-10 KM44C258A-12 KM44C258A-8 KM44C258A-10 KM44C258A-12 Symbol Icci Icc2 IC C 3 Min - Max 75 65 55 2 75 65 55 55 45 35 1 75 65 55 10 10 , SAMSUNG SEMICONDUCTOR INC E3E D 7^4142 Q00fll7S Ì KM44C258A 2 5 6 K x 4 Bit


OCR Scan
PDF Q00fll7S KM44C258A 150ns 180ns 220ns KM44C258A-8 KM44C258A-10 KM44C258A-12 100ns 120ns km44c258
4Mx1 nibble

Abstract:
Text: KM44C266CZ KM44C266CV KM44C266CVR KM44C266CT KM44C266CTR KM44C258CP KM44C258CJ KM44C258CZ KM44C258CV KM44C258CVR KM44C258CT KM44C258CTR KM44C268CP KM44C268CJ KM44C268CZ KM44C268CV KM44C268CVR KM44C268CT


OCR Scan
PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P 4Mx1 nibble KM41C464 KM424C256Z KMM584000B KMM591000AN KMM591000B
Not Available

Abstract:
Text: ®tR = m in.) C Symbol KM44C258C-6 KM44C258C-7 KM44C258C-8 S tandby C urrent (RAS = CS = V,h , = min.) KM44C258C-6 KM44C258C-7 KM44C258C-8 Icc3 S ta tic C olum n M ode C urrent (RAS = C 5 = V i l , A ddress C ycling @ tP = min.) C KM44C258C-6 KM44C258C-7 KM44C258C-8 - E , § C y c lin g @ tR = min.) c — — IC C 5 KM44C258C-6 KM44C258C-7 KM44C258C-8 â , < 7 0 °C , V Cc = 5 .0 V ± 10%, See notes 1,2) KM44C258C-6 KM44C258C-7 KM44C258C-8


OCR Scan
PDF KM44C258C 144x4 KM44C258C KM44C258C-6 110ns KM44C258C-7 130ns KM44C258C-8 150ns
Supplyframe Tracking Pixel