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km41c4000c

Abstract: as4u
Text: KM41C4000C/CL/CSL- 5 KM41C4000C/CUCSL-6 KM41C4000C/CL7CSL-7 KM41C4000C/CLVCSL-8 · · · · · · · · 50ns 60ns , KM41C4000C J/CLJ/CSLJ ' 2 R Ä5C 3 N.C C 4 A 10 C 5 DC W c ' · KM41C4000C Z/C LZ/C SLZ · KM41C4000CT , 10OE 5 wq: DOE 1 O 2 0 U V SS 1 9I a 1 8 Hera 1 7 U n.c. 1 6I N 1 5 II A s 1 4 JA? 1 3 I]A . 1 2 IA 5 4 1 1 I] A A om 6 Aid 7 A 2H 8 Asti 9 V cc H 10 0 . KM41C4000CTR/CLTR/CSLTB Pin , A Sd 1 8 N .C . [I 1 7 6 A 9d 1 5 Aed 1 4 A ?d 1 3 A 6d 1 2 Asd 1 1 Aid 1 O 1 n° 2 IIw 3U R


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PDF KM41C4000C/CL/CSL KM41C4000C/CUCSL KM41C4000C/CL/CSL 20-LEAD km41c4000c as4u
Not Available

Abstract: No abstract text available
Text: GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM41C4000C/CL/CSL- 5 50ns , U ' DC W c W 1 2 K M41C4000C Z/C LZ/C SLZ 20 3 Vss 19 3 Q 18 □ C 3 5 A iq C 5 , □ A 5 11 □ A 4 Ao a2 I] [ i 1] I] n Zl nu u QÖ ]3 Q ! A? • KM41C4000CTB , 10Œ 5 16 H as 6 15 H A S N.C. Ai Ao m A3 0 7 ai EE 7 14 H A ? 13 I , Pin Function 1 I l D Vss [ I 20 0 f iS 5 [ £ 3 « ] n\ D«E [ «] [20 1 wQI


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PDF KM41C4000C/CL/CSL KM41C4000C/CL/CSL-5 KM41C4000C/CL/CSL-6 110ns KM41C4000C/CL/CSL-7 130ns KM41C4000C/CL7CSL-8 150ns KM41C4000C/CL/CSL
KM41C4000C

Abstract: No abstract text available
Text: random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time(- 5 , Dissipation Speed - 5 -6 -7 -8 3.3V - unit : mw 5V 470 415 360 - 220 200 180 · +5V±10% power supply , ,194.304 x 1 Cells Data out Buffer 1Performance range: Speed tRAC tCAC tRC tPC 50ns 13ns 90ns 35ns - 5 , ) KM41C/V4000CJ >KM41C/V4000CT f DC 1 o WC 2 RÄ5C 3 N.C C 4 A10 C 5 20 19 18 17 16 Vss Q CAS N.C A9 DIE 1 o WIE 2 HÄ5IE 3 N.C OE 4 a io ie 5 20 19 18 17 16 3 Vss 31Q 31CÄ5 3 N.C 3 A9 AOC 6


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PDF KM41C4000C, KM41V4000C 1024cycles KM41C4000C
Not Available

Abstract: No abstract text available
Text: random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time(- 5 , • Active Power Dissipation Speed 3.3V - 5 -6 -7 -8 unit : mw 220 200 180 â , 50ns - 5 60ns -6 70ns -7 80ns -8 range: tCAC 13ns 15ns 20ns 20ns tRC 90ns 110ns , CMOS DRAM PIN CONFIGURATION (Top Views) • KM41C/V4000CJ r DC WC RÄ 5 C N.CC A10C AOC A1C A2C A3^ Vccc > 20 19 18 17 16 1 o 2 3 4 5 6 7 a 9 I0 L . KM41C


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PDF KM41C4000C, KM41V4000C 1024cycles 00231fc
KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs 1. INTRODUCTION (DRAM) FUNCTION GUIDE 4 M b it 4Mx1 T KM41C4000C-5 " KM41C4000CL- 5 - KM41C4002C- 5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C , KM44C1000C- 5 KM44C1OOOCL- 5 KM44C1010C- 5 KM44C1002C- 5 KM44C1003C- 5 KM44C1003CL- 5 KM44C1004C- 5 KU44C1004CL- 5 , 4M B/W 512KX8 - r KM48C512B- 5 - -KM48C512BL- 5 - KM48C512B-6 KM48C512BL-6 - KM48C512B-7 KM48C512BL-7 KM48C512B-8 - KM48C512BL-8 KM48C514B- 5 - KM48C514B-6 - KM48C514B-7 -


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PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
KM416C60-7

Abstract: KM48C2104B KM416C60-6 dram 64kx1 km416c60 KM44V1004CL-7 KM48C2004B
Text: « KM416C60-55 KM416C64-55 4M bit M 4Mx1 KM41C4000C-5 KM41C4000CL- 5 1 - KM41C4000CL-6 p~i KM41C4000CL-7 KM44C1004CL- 5 j- ¡ KM44C1004CL-6 > - KM44C1004CL-7 H KM44C1005C- 5 KM44C1005C-6 KM44C1005C-7 KM44C1005CL- 5 - KM44C1005CL-6 - KM44C1005CL-7 13 ci ELECTRONICS CMOS DRAM 4M bit i-1 1Mx4 , | KM44V1004CL-8 4M B/W !-j 512Kx8 [- i- I KM48C512B- 5 - KM48C512B-6_ f-| KM48C512B-7 KM48C514B- 5 KM48C514BL- 5 - KM48C514B-6 - KM48C514BL-6 KM48V512B-6 KM48V512BL-6 I KM48V514B-6 I KM48V514BL-6 L -


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PDF KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8 KM48C124-55 KM48C124-6 KM416C60-6 KM416C64-6 KM416C60-7 KM48C2104B dram 64kx1 km416c60 KM44V1004CL-7 KM48C2004B
Not Available

Abstract: No abstract text available
Text: random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time(- 5 , • JEDEC Standard pinout Speed 5V 3.3V - 5 - -6 -7 220 200 -8 180 â , 128ms Vcc RÄSCÄ 5 " Control Clocks W“ I - 5 -6 60ns -7 70ns -B 80ns , ow Cells ; A ddress B uffer H I_ n il r-.fr —ICxl. AUuldSS Qullfcil I - 5 £ - , /V4000CJ • KM41C/V4000CZ r DC 1 0 wc 2 RS5C 3 N.C C 4 A10C 5 20 19 18 17 16 □ Vss


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PDF KM41C4000C, KM41V4000C 1024cycles b4142
powec

Abstract: No abstract text available
Text: random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time(- 5 , Power Dissipation Speed - 5 -6 -7 -8 3.3V - unit : mw 5V 470 415 360 305 · Common I/O using early , h T im e r Performance range: Speed tRAC 50ns - 5 60ns -6 70ns -7 80ns -8 tCAC 13ns 15ns 20ns 20ns , N.C C A10C 1 0 2 3 4 5 ^7- 20 19 18 17 16 Vss 0 CÄ5 N.C A9 A9 Q D RÄS N.C AO CÄS Vss W A10 N.C A1 A3 A4 A6 A8 DOE 1 O WC 2 RSSE 3 N.C E 4 A1oOE 5 20 19 18 17 16 2 Vss 3 0 2 CÄ3


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PDF KM41C4000C, KM41V4000C 1024cycles powec
BY 235

Abstract: No abstract text available
Text: random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), access time(- 5 , - KM41 C4000C/CL(5V) - KM41 V4000C/CL(3.3V) > Active Power Dissipation Unit : mW Speed 3.3V 5 V - 5 - 470 -6 220 415 -7 200 360 -8 180 305 ■Fast Page Mode operation 1 CAS-before-RÄS refresh , Performance range: Speed tRAC tCAC tRC tPC Remark - 5 50ns 13ns 90ns 35ns 5V Only -6 60ns 15ns 110ns 40ns 5V , /V4000CT N 20 □ Vss A9 Q E CSS DE 1 o 20 3 Vss 19 □ Q Q Vss WIE 2 19 3Q 18 □ CÄ 5 D H


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PDF KM41C4000C, KM41V4000C 1024cycles 0Q2015Ã BY 235
KM23C1000-20

Abstract: KM28C64B KMCJ532512 KM718B90-12 KMM591000CN 30-pin simm memory "16m x 8" KM41C16000ALL KM48V2104AL SIMM 1Mx9 KM68V257-17
Text: T KM41C4000C-5 - KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL- 5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 KM41C4000CSL- 5 KM41C4000CSL-6 KM41C4000CSL-7 KM41C4000CSL-8 KM41C4002C- 5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C , -7 KM41V4000CLL-8 11 ELECTRONICS MEMORY ICs 4 M b it 1Mx4 -i- KM44C1000C- 5 - KM44C1000C-6 FUNCTION GUIDE - KM44C1000C-7 - KM44C1OOOC-8 KM44C1OOOCL- 5 KM44C1OOOCL-6 KM44C1000CL-7 KM44C1OOOCL


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PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM23C1000-20 KM28C64B KMCJ532512 KM718B90-12 KMM591000CN 30-pin simm memory "16m x 8" KM41C16000ALL KM48V2104AL SIMM 1Mx9 KM68V257-17
1mx1 DRAM DIP

Abstract: KM44V1000C KM41V4000CL
Text: No file text available


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PDF KM41C1 256Kx4) 00D-L# 256KX KM44C2 KM44C256D-L# 128Kx8 KM48C128# KM48C128 1mx1 DRAM DIP KM44V1000C KM41V4000CL
Not Available

Abstract: No abstract text available
Text: Mode TIMING DIAGRAMS 1. 2. 3. 4. 5 . 6. Fast Page Mode, x1 Device Timing Diagram


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PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.
1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: #-L KM44V16104A# K M 44V16104A#-L Fast Page(4K) EDO(8K) EDO(4K) 8Mx8 5 V r1 0% KM48C8000A# K M


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PDF KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
KM416C254

Abstract: KM418C256 KM44C1003 KM44V4100AL KM48C2100AL
Text: No file text available


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PDF KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM416C254 KM418C256 KM44C1003 KM44V4100AL KM48C2100AL
23C1001

Abstract: KMM5334100 km 23c 4000B M681000 4100C 532512B 23c4001 KM428V256 KM68V257 KM681001-25
Text: KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 4Mbit- 4Mx1 KM41C4000C-5 KM41C4000C-6 - KM41C4000C-7 - KM41C4000C-8 KM41C4000CL- 5 KM41C4000CL-6 KM41C4000CL-7 - KM 41C4000CL-8 KM41C4000CSL- 5 KM41C4000CSL-6 KM41C4000CSL-7 KM41C4000CSL-8 KM41C4002C- 5 KM41C4002C , MEMORY ICs 4Mbit- 1M x4 - KM44C1000C- 5 FUNCTION GUIDE H KM44C1OOOC-6 KM44C1OOOC-7 KM44C1OOOC-8 - KM44C1004CSL- 5 KM44C1004CSL-6 KM44C1004CSL-7 KM44C1004CSL-8 - KM44V1OOOCL


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PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B M681000 4100C 532512B 23c4001 KM428V256 KM68V257 KM681001-25
1004CL

Abstract: 44V16 44C40 366F 364C dram module kmm 2mx32 44v16100 KMM5368103B M5368 4003B
Text: Page ( FP ) Mode 5 V [T6M~Based j- f - ftM x 3 g -|lM x 3 6 "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' KMM5361203BW/8 WG-6 H KMM5322200BW/BWG-6 KMM5322100BKU/BKUG- 5 K <MM5361203BW/BWG-7 KMM5322200BW/BWG-7 [2MX32 , -1 KMM5362203BW/BWG-6 H KMM5362203BW/BWG-7 KMM5324000BK/BKG- 5 ~ T ~ [ KMM5324000BK/BKG-6 H H ~ KMM5324000BK/BKG~T^ KMM53241QOBK/BKG- 5 H '^M M 5324100B K /B KG -6 ~ |- j KMM5324100BK/BKG-7 ~ H , K ;G -6 H~ KMM5328000BK/BKG-7 I ! ! KMM5364003BK/BKG- 5 H KMM5364103BK/BKG- 5 - |8Mx32 : 1


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PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 44C40 366F 364C dram module kmm 2mx32 44v16100 KMM5368103B M5368 4003B
BS-A422NW-LC2.5

Abstract: CS-DSSMDB9MM0-002.5 NP33S168128K-7.5 SA43-21GWW-7.5 md-32h1.5 FRX11.5 GL8E03D.5 QS702-1.5 MS20427F4-4.5 LP3992LMFX1.5
Text: 75E;54E651E)7575E; 5 EEF6,8AC75BCDB57;CFC7F,58E65 F78"5 B7512 1 54E61!5C855C75;E65FB6DCD596CE)85<AA76, 5 $E+76755BB75FE8)765 $6E)FA858)FB585EE65FB6DCD5776D7F, 5 <F0)$ 5 <AA76C78" 5 5 =CAB55F757;CFC7F,5E;5A,$CF, 5 >54E61!5DC9785AB75 5CDBA?5 FECACE855CF67875<AA76, 5 C;7556)5AC75C5585;EEA$6CA 5+BCFB5F5 <7578C, 5 FFEEA75C5 AB7578CD5E; 5 $E6A<75$6E)FA8" 5 B75


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PDF 123456789ABCD9EFFB 5BCDB57; B7512 E65FB FA858 AA76C78 5DC9785AB75 5AE579A7 95CD567895 BS-A422NW-LC2.5 CS-DSSMDB9MM0-002.5 NP33S168128K-7.5 SA43-21GWW-7.5 md-32h1.5 FRX11.5 GL8E03D.5 QS702-1.5 MS20427F4-4.5 LP3992LMFX1.5
MLF473F.5

Abstract: SP-7-405-1-.5 LM136-2.5
Text:  856751234;5$6E)FA5C75E<54E6-1 8575E< 5 EEF6,8AC75BCDB57< 5 $E+76755BB75FE8)765 $6E)FA858)FB5 , 85+C677885878E685$E6A=75C8A6)7AACE55 5 =F.)$ 5=AA76C78"5 5 >CAB55F757< 5 +<76579754E6-1 85DC975AB75=CCA,5AE577A756) 5 AC757975C5@E+ 5 CDBA@5FECACE855CF67875=AA76, 5 C<7556)5AC75C5585 5 +BCFB5F5=75 78C, 5 FFEEA75C5AB7578CD5E<54E6A=7546E)FA8" 5


Original
PDF 123456789ABCD9EFFB B7512 85C85 E65FB FA858 AA76C78 85DC975AB75 5AE577A7 95CD567895 MLF473F.5 SP-7-405-1-.5 LM136-2.5
2008 - l-band Phase Shifter

Abstract: remec Microwave RM4300 magnum microwave LM136-2.5
Text: degrees RMS Phase Error 5 4 3 2 1 0 1.1 1.15 1.2 RMS error = 1 N N i =1 x i2 where , (States 0-32) PHASE (Deg) State # 0 0 2.8125 1 5.625 2 8.4375 3 11.25 4 14.0625 5 16.875 6 19.6875 7 22.5 , 81.5625 29 84.375 30 87.1875 31 90 32 180 Pad 4 Pad 5 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 90 Pad 7 Pad 8 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5 0 - 5


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PDF RM4300, RM4300 50-Ohm 12-mil l-band Phase Shifter remec Microwave magnum microwave LM136-2.5
LTC1962EMS8-2.5

Abstract: LM136-2.5
Text: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%525525&33'5($E#$E55 $F)ED) 5 *)+ 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/ 5 $F)ED) 5 *)+ 5-E5 *FD";0FED5 15 :525>5253>55 555555555 .525&?4.5252 .! 5 15 @#5EB525B65B$E#$E5$)DAE5 15 ($E#$E5#B-D)5A5$#5EB5&33'55 & 15 ;B-D) 5 /DAE25B54'55A 55 15 C66DA


Original
PDF 1232456773849AB732 4CDE457FC7A4 2F37F4 9AB732 4CDE457FC7A41 567897A94BC76DACEF4 5EB52 5B65B E25B5 0050BF/5D66 LTC1962EMS8-2.5 LM136-2.5
BS-A422NW-LC2.5

Abstract: SP-7-405-1-.5 ZR4040-2.5 LM136-2.5
Text: 93% ± 2% 56 Days AC/C: < ± 5 % < 50.10 - 4 at 1 KHz > 50% o f lim it value +85°C 1000h 1 .2 5 X V n AC/C: < < < > ± 5 % 3 0 .1 0 - 4 a t1 0 K H z for C c p F 20.10 - 4 at 1 K Hz for , ental conditions. P erform ance C apacitance change: MMY D im ensions 0 .0 0 1 0 .0 0 1 5 0 .0 0 2 2 0 .0 0 3 3 0 .0 0 4 7 0 .0 0 6 8 0 .0 1 0 0 .0 1 5 0 .0 2 2 0 .0 3 3 0 .0 4 7 0 .0 6 8 0 .1 0 0 .1 5 0 .2 2 0 .3 3 0 .4 7 0 .6 8 1 .0 1 . 5 2 .2 3 .3 4 .7 6 .8 10 1 0 0


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PDF D51tDb7 DD01521 BS-A422NW-LC2.5 SP-7-405-1-.5 ZR4040-2.5 LM136-2.5
DEK 5 FWZ 1-10

Abstract: gw158 gw 108 GW CSSRM2.PM-N3-A333-1 0132961032 GW 17 Polyamid GW CSHPM1.EC-KULQ-A737-1 LM136-2.5
Text: data Colour Qty Pitch Printing variations No. of characters Dek 5 Available in all colours , violet grey white 500 pcs DEK 5 = 5 mm : DEK 6 = 6 mm : DEK 6.5 = 6.5 mm : DEK 8 = 8 mm FZ = consecutive horizontal e.g. DEK 5 FW 1-50 FS = consecutive vertical e.g. DEK 5 FS 51-100 FWZ = consecutive horizontal line e.g. DEK 5 FWZ 1-10 FSZ = consecutive vertical line e.g. DEK 5 FSZ 21-30 GW = identical horizontal e.g. DEK 5 GW A GS = identical vertical e.g. DEK 5 GS B vertical max. 3 characters Dek 6


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PDF Tem60101 DEK 5 FWZ 1-10 gw158 gw 108 GW CSSRM2.PM-N3-A333-1 0132961032 GW 17 Polyamid GW CSHPM1.EC-KULQ-A737-1 LM136-2.5
roederstein tantalum

Abstract: 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
Text: rate Leads: tinned Dimensions Standard version Sif +i IO \ RM S style D ETPW 5 ±0, 5 yt 0 d 5 ±0, 5 5 ±0, 5 Capacitors must not correspond with the sketches, only the dimensions have to , max. H max. Style S,DS,L H2 max. RM ±0, 5 0 d ± 0,05 ETPW 1 4, 5 7, 5 10, 5 2, 5 0, 5 ETPW 2 5 9, 5 12, 5 2, 5 0, 5 ETPW 3 6 10, 5 13, 5 2, 5 0, 5 ETPW 4 6, 5 11, 5 14, 5 2, 5 0, 5 ETPW 5 9 14 17") 5 0, 5 ETPW 6 9, 5 17 20 5 0, 5 1 only "S" style VISHSV INTER/ ROEHERSTEIN bBE P ■7SSlb2H Q001187 044


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PDF 7fl21b24 roederstein tantalum 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
2005 - toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC VA MARKING smd marking Yd rn4983 XA marking 2SC3327 LM136-2.5 RN1101F
Text: . 71 71 72 72 72 73 5 3.4 3.5 3.6 4. 5 . 6. 7 , ] . 101 [ 5 ] . , ] 5 VCEO (V) ICEO (mA) R1 (k) R2 (k) 4.7 4.7 22 22 22 22 , 0.1± 0.05 0.1 ± 0.05 3 0.7 ± 0.05 0.35 0.35 0.1± 0.05 1 6 3 2 5 0.8± 0.05 1.0 , 120 min 100 min 60 min 30 min 5 5 5 5 5 5 5 5 5 5 5 5


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PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC VA MARKING smd marking Yd rn4983 XA marking 2SC3327 LM136-2.5 RN1101F
BEPC-13-1110cph-w-p2.5

Abstract: ZR4040-2.5 LM136-2.5
Text: B Q Q 0 7 SHEET AMP 2 2 5 5 5 0 - T YY AMP 2 2 5 5 5 0 - 3 2 2 9 9 -1 YY WW WW IN S T R U C , STRIP LENGTH I5Ü P ER 5E D ED A I0 B 5 Q L E T E BY 2 2 5 5 5 0 - 6 TIM ES A A - 5 B S 6 R G - 1 4 2 /U ,1 4 2 A /U g 1 4 2 B /U TIM ES A A - 5 0 0 7 R 6 - 5 S B A J ,6 2 B /U £ BSX 7 0 0 2 - 5 9 /IJ R G - 5 B A /U £ 5B C /U R G -1 8 0 /U , 1 BÛA/IJ £ 1B Û B/U MICRODOT 2 5 0 - 4 1 7 2 £ 2 5 0 - 4 2 0 8 MICRODOT 2 5 0 - 4 1 7 1 g 2 5 0 - 4 2 0 7 R G -3 9 3 /U R G -2 2 5 /U R G - 9 /U ,9 A /U ,9


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PDF /jjrrfi03il BEPC-13-1110cph-w-p2.5 ZR4040-2.5 LM136-2.5
Supplyframe Tracking Pixel