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km418c256

Abstract: No abstract text available
Text: leC 4 - 90 80 70 mA mA mA KM418C256 KM418C256L KM418C256SL leC5 - 1 200 , (Top Views) • KM418C256J /L J/SLJ KM418C256Z /LZ/SLZ D Q 11 V cc □ 1 0 40 â , 110 mA mA mA KM418C256L KM418C256SL leC7 - 300 150 mA mA Standby Current , KM418C256 /USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256 /L/SL is a CMOS high speed 262,144


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PDF KM418C256/USL KM418C256/L/SL KM418C256/L/SL-7 130ns KM418C256/Ã 150ns KM418C256/L/SL-10 100ns 180ns KM418C256/L/SL km418c256
KM418C256/L/SL-7

Abstract: No abstract text available
Text: KM418C256 KM418C256L KM418C256SL ICC5 — 1 200 100 mA ixA ftA CAS-Before-RAS R efresh , /L/SL CMOS DRAM PIN CONFIGURATION (Top Views) • KM418C256Z /LZ/SLZ • KM418C256J /LJ , =250pS (S L-ver), KM418C256L KM418C256SL 300 150 mA ICC7 S tandby C urrent (RAS = UCAS = , SAMSUNG ELECTRONICS INC bME D KM418C256 /L/SL ■7 T b 4 m 2 GGlBMTb 12=5 « S U G K , €¢ Performance range: The S am sung KM418C256 /L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A


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PDF KM418C256/L/SL KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/L/SL-10 130ns 150ns 100ns 180ns KM418C256/L/SL-7
8C2S6-10

Abstract: No abstract text available
Text: nit ( 0 ° C < T a « 7 0 ° C , V c c = 5 .0 V ± 1 0 % , See notes 1,2) KM418C256-7 KM418C256-8 KM418C256-10 M in P aram eter M in S ym bol U n its N otes M ax M ax M in M ax , notes 1,2) KM418C256-7 KM4 8C256-8 KM41 8C2S6-10 M in P aram eter M in Sym bol , PRELIMINARY CMOS DRAM KM418C256 2 5 6 K X 1 8 Bit CMOS Dynamic RAM with Fast Page Mode , PRELIMINARY KM418C256 CMOS DRAM ABSOLUTE MAXIMUM RATINGS* S ym bol P aram eter R ating I


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PDF KM418C256 100ns 180ns 40-LEAD 8C2S6-10
km418c256

Abstract: KM418C256/L/SL-7
Text: -8 KM418C256 /USL-10 KM418C256 KM418C256L KM418C256SL KM418C256 /L/SL-7 KM418C256 /L/SL-8 KM418C256 /L/SL-10 Min , KM418C256L KM418C256SL IC C 7 - 300 150 mA mA ^a V V * NOTE: Iccii Icc3, Icc4 and ices are , KM418C256 /L/SL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tnAC KM418C256 /L/SL-7 KM418C256 /L/SL-8 KM418C256 /USL-10 · · · · · · · · 70ns 80ns 100ns tcAc 20ns 20ns 25ns tnc 130ns 150ns 180ns The KM418C256 /USL features Fast Page Mode opera tion which


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PDF KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/USL-10 100ns 130ns 150ns 180ns KM418C256/USL KM418C256/L/SL km418c256
Not Available

Abstract: No abstract text available
Text: , V c c = 5 .0 V ± 1 0 % , S ee notes 1,2) KM418C256-7 Min Max KM418C256-8 KM418C256-10 Units Notes , ° O S T a « 7 0 ° C , V Cc = 5 .0 V ± 1 0 % , See notes 1,2 ) KM418C256-7 Symbol Min Max Min 60 8 0 , Min 75 8 Max ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 3 8 8 8 8 6 KM418C256-8 KM418C256-10 Units Notes data-in hold time referenced to RAS Refresh period (5 1 2 cycles) W rite com m , PRELIMINARY KM418C256 CMOS DRAM 2 5 6 K X 18 Bit CMOS Dynamic RAM with Fast Page Mode


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PDF KM418C256 40-LEAD
Not Available

Abstract: No abstract text available
Text: KM418C256 /L/SL CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES , O S process. KM418C256 /L/SL CMOS DRAM PIN CONFIGURATION (Top View s) K M 418C 256J/LJ , periods may affec t device reliability. «5 SA M SU N G 112 KM418C256 /L/SL CMOS DRAM , Electronics 113 KM418C256 /USL CAPACITANCE CMOS DRAM (t a = 2 5 ° q S ym b ol M in M ax , , S e e notes 1, 2) KM418C256 /USL-7 KM418C256 /USL-Í KM418C256 /L/SL-10 Min Parameter Min


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PDF KM418C256/L/SL 256Kx 256/L/S 130ns 150ns 100ns 180ns
KM44C1000

Abstract: No abstract text available
Text: . 262 256K X 18 20. KM418C256


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PDF KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000
km418c256

Abstract: KM418C256J
Text: PRELIMINARY KM418C256 CMOS DRAM 256'KX(8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Perform ance range: tRAC tCAC tRC GENERAL DESCRIPTION The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications such as minicom puters, graphics and high perform ance portable com , DIAGRAM PIN CONFIGURATION (Top Views) KM418C256J f - - N RAS LCÄS Oc ä s


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PDF KM418C256 km418c256 KM418C256J
al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 NM9307 HN28C256 TC5116100 oki cross reference
Text: MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 CROSS REFERENCE GUIDE Mode F.Page Nibble S. Column Samsung KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 KM48C512 KM49C512 KM416C256 KM418C256 KM41C16000 KM44C4000 KM48C2000 KM416C1000 Toshiba TC51256 TC51257 TC51258 TC51464 TC51466 TC511000 TC511001 TC511002 TC514256 TC514258 TC514100 TC514101 TC514102 TC514400 TC514402 TC514800A


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PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 NM9307 HN28C256 TC5116100 oki cross reference
Not Available

Abstract: No abstract text available
Text: 20 0 ns 25 ns KM418C256 Truth Table LCAS UCAS W OE D Q i^g 0 0 7 o d


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PDF KM416C256LL 256Kx KM416C256LL 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns KM416C256LL-7
Not Available

Abstract: No abstract text available
Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tnA C KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 · · · · · · · · · GENERAL DESCRIPTION , V or OPEN @ tR c= KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 150 , (Top Views) KM418C256LLZ DO, DQta DO i? D Q 14 · KM418C256LLJ +: ' C DO- C DQ, C DÛ 0 1 2 3


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PDF KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 180ns KM418C256LL
Not Available

Abstract: No abstract text available
Text: Standby Current (RAS = UCAS = LCAS > V c c - 0.2V) KM418C256A KM418C256AL KM418C256ALL IC C 5 , CONFIGURATION ST Ö ■CMOS DRAM (Top Views) * KM418C256AJ /ALJ/ALLJ • KM418C256AZ /ALZ/ALLZ* KM418C256AT /ALT/ALLT • KM418C256ATR /ALTR/ALLTR — Vcc C i o D Q ,C 2 DO2 C 3 DQ3 C 4 DQ* C 5 Vcc \ 6 , SAMSUNG ELECTRONICS INC b? E KM418C256A /AL/ALL D ■7^4142 GGISÖT? 3b , GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A /AUALL is a CMOS high speed 262


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PDF KM418C256A/AL/ALL 256Kx KM418C256A/AUALL 110ns KM418C256A/AL/ALL-7 130ns KM418C256A/AL/ALL-8 150ns KM418C256A/AUALL-6
Not Available

Abstract: No abstract text available
Text: tc H S 0 25 100 180 0 ns ns KM418C256 Truth Table RAS H L L L L L L L L ¡ LCAS H H L H L L


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PDF KM416C256LL KM416C256LL-7 KM416C256LL-8 KM416C256LL-10 100ns 130ns 150ns 180ns 416C256LL KM416C256LL
Not Available

Abstract: No abstract text available
Text: 20 45 20 20 0 ns 25 20 20 ns 25 ns ns 25 20 0 KM418C256


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PDF KM416C256LL KM416C256LL KM416C256LL-7 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns
km418c256

Abstract: M418C KM418C256A
Text: CONFIGURATION CMOS DRAM (Top Views) KM418C256AJ /ALJ/ALLJ · KM418C256AZ /ALZ/ALLZ · KM418C256AT /ALT/ALLT , /AL/ALL-6 KM418C256A /AL7ALL-7 KM418C256A /AL/ALL-8 KM418C256A KM418C256AL KM418C256ALL KM418C256A >AUALL , KM418C256AL Icc7 - 300 iiA KM418C256ALL Iccs - 200 /*A Input Leakage Current , KM418C256A /AL/ALL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tñAC KM418C256A /AUALL-6 KM418C256A /AUALL-7 KM418C256A /AL/A LL-8 · · · · · · · · · 60ns 70ns


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PDF KM418C256A/AL/ALL KM418C256A/AUALL-6 KM418C256A/AUALL-7 KM418C256A/AL/A 110ns 130ns 150ns KM418C256A/AL/ALL KM418C256A/AUALL km418c256 M418C KM418C256A
Not Available

Abstract: No abstract text available
Text: KM418C256LL-8 80ns 20ns 150ns KM418C256LL-10 100ns 25ns 180ns KM418C256LL-7 • F a , ) Parameter Symbol KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Standby Current (RAS = U CAS = LC A S = , KM418C256LL-10 Icc3 - 150 130 110 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Icc4 - , , Address Cycling @ tnc = min.) Min KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Self Refresh , 1, 2) c Parameter Symbol KM418C256LL-7 Min Max KM418C256LL-8 KM418C256LL-10


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PDF KM418C256LL D0134n KM418C256LL 130ns KM418C256LL-8 150ns KM418C256LL-10 100ns 180ns KM418C256LL-7
Not Available

Abstract: No abstract text available
Text: KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 tcAc I rc 70ns 20ns 130ns 80ns 20ns 150ns , KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 S tandby C urrent (RAS = UCAS = LCAS = V,H ) M in Max , KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Icc3 - 150 130 110 Fast Page M ode C urrent* (RAS = V il, UCAS o r LCAS, A ddress C ycling @ tP = min.) C KM418C256LL-7 KM418C256LL-8 , CAS-Before-RAS Refresh C urrent* (RAS, UCAS o r LCAS C ycling @tnC= min.) KM418C256LL-7 KM418C256LL-8


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PDF KM418C256LL KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 100ns 180ns
Not Available

Abstract: No abstract text available
Text: 25 ns 25 ns 100 100 f*S 150 180 ns 0 ns 20 KM418C256 Truth


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PDF KM416C256LL DD134S3 KM416C256LL KM416C256LL-7 130ns KM416C256LL-8 150ns 100ns 180ns KM416C256LL-10
KM416C254

Abstract: KM418C256 KM44C1003 KM44V4100AL KM48C2100AL
Text: 5V±10% KM418C256B# KM418C256BL# 16M bit 16Mx1 5V±10% KM41C16000A# KM41C16000AL# KM41C16000ASL


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PDF KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM416C254 KM418C256 KM44C1003 KM44V4100AL KM48C2100AL
Not Available

Abstract: No abstract text available
Text: , A ddress C ycling @tRC= m in.) KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 S tandby C urrent , , RAS, A ddress C ycling @ tR = min.) C KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 IC 3 C - , .) KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 IC 4 C - 90 80 70 Icc5 - 100 mA - , KM418C256LL AC CHARACTERISTICS (C ontinued) KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Min , < T a < 7 0 ° C , VC = 5 .0 V ± 1 0 % , See notes 1, 2) c KM418C256U-7 Parameter KM418C256LL-8


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PDF KM418C256LL KM418C256LL 130ns KM418C256LL-8 150ns KM418C256LL-10 100ns 180ns KM418C256LL-7
256KX16 zip

Abstract: KM416C256AJ
Text: * KM416V256ALLT * KM416V256ALLTR KM418C256AJ KM418C256AZ KM418C256AT KM418C256ATR KM418C256AU KM418C256ALZ KM418C256ALT KM418C256ALTR KM418C256ALU KM418C256ALLZ KM418C256ALLT KM418C256ALLTR * KM418V256AJ * KM418V256AZ


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PDF 512KX9 256Kx 256KX16 256KX16 zip KM416C256AJ
Not Available

Abstract: No abstract text available
Text: CMOS DRAM KM418C256B 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION T his , electronics 138 ® 7 Tb 414 2 0G2G244 Tß3 ■KM418C256B CMOS DRAM PIN CONFIGURATION (Top Views) KM418C256BT ' K M 4 1 8 C 2 5 6 BJ vcc az DQO DQ1 DQ 2 DQ3 VCC DQ4 DQ5 DQ6 , ELECTRO NICS 002G24S TIT ■CMOS DRAM KM418C256B ABSOLUTE MAXIMUM RATINGS Units Symbol , ELECTRO NICS 7^4142 D[]2DS4b ÛSL. KM418C256B CMOS DRAM DC AND OPERATING CHARACTERISTICS


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PDF KM418C256B 71L4142 DD20251
KM418C256B

Abstract: No abstract text available
Text: -6 KM418C256B /BL/BLL-7 KM418C256B /BI7BLL-8 KM418C256B KM418C256BL KM418C256BLL KM418C256B /BL/BLL-6 KM418C256B /BL , 0.2V DQi-DQi6=Vcc-0.2V, 0.2V or Open |CC6 KM418C256BL ICC7 300 M KM418C256BLL lees , KM418C256B /BL/BLL CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tRAC tCAC tRC GENERAL DESCRIPTION The Samsung KM418C256B /BLVBLL is a CMOS high spe ed , a te d Samsung's advanced CMOS process. u sin g KM418C256B /BL7BLL-6 KM418C256B /BLVBLL


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PDF KM418C256B/BL/BLL KM418C256B/BLVBLL 256B/BL/BLL 40-LEAD KM418C256B
Not Available

Abstract: No abstract text available
Text: care Don't care - Max KM418C256B 110 90 80 75 2 110 90 80 75 70 60 55 50 1 150 110 90 80 75 300


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PDF KM416C256B, KM416V256B
ida5

Abstract: No abstract text available
Text: KM418C256B CMOS DRAM 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This , · Part Identification - KM418C256B /BL (5V, 512 Ref.) · Fast Page Mode operation · 2 CSS Byte/Word , right to change products and specifications without notice. 138 c i c r ELECTRONICS KM418C256B PIN CONFIGURATION (Top Views) · KM418C256BJ 1o 2 3 4 5 VCCt o 0 DQ4 [ 7 DQ5 I 8 DQ6 I 9 DQ7 [ 10 DQ8 , DQ31 KM418C256BT VCC E DQO 0= DQ1 CC D Q 2C DQ3 IE VCC IT D Q 4E DQ5 EC DQ6 O C D Q 7D I 1 o 2 3 4 5 6


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PDF KM418C256B 256Kx18 ida5
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