KM416V4104CS |
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Samsung Electronics
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KMM366F804CS1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V, Density(MB) = 64, Organization = 8Mx64, Mode = Edo, Refresh = 4K/64ms, Speed(ns) = 50,60, #of Pin = 168, Component Composition = (4Mx16)*8+EEPROM, Production Status = Eol, Comments = Unbuffered |
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KM416V4104CS-45 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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KM416V4104CS-5 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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KM416V4104CS-50 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
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KM416V4104CS-6 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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KM416V4104CS-60 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
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KM416V4104CS-L45 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
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KM416V4104CS-L-45 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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KM416V4104CS-L-5 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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KM416V4104CS-L50 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
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KM416V4104CS-L-6 |
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Samsung Electronics
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4M x 16-Bit CMOS Dynamic RAM with Extended Data Out |
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KM416V4104CS-L60 |
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Samsung Electronics
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4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
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