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KM110B/4 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
KM110B/4 KM110B/4 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
KM110B/4 KM110B/4 ECAD Model Philips Semiconductors Magnetic field sensor Scan PDF

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Not Available

Abstract: No abstract text available
Text: ground 3 -V 0 output voltage 4 +Vcc supply voltage Marking: KMZ10B PHDxx. Fig , hysteresis of output voltage f operating frequency November 1994 note 4 81 Philips , output voltage is directly proportional to the supply voltage. 4 . Sensor bridge response only , . MBD885 vO (mV/V) 4 0 - 4 2 - 1 0 i 1 H y (kA/m) Tamb = 25 °C; ^offset = 0* Fig. 4 Sensor output characteristic. November 1994 82 Philips Semiconductors


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PDF KM110B/2 KM110B/2 FXD100 MBD882 MBD885 KM110B/2.
1998 - magnetic sensor circuit diagram

Abstract: "Magnetic Field Sensor" MAGNETIC SENSOR static field KMZ10B magnetic sensor marking HY FXD100 SC17 Magnetic Field Sensor marking HX 6 pin
Text: MLB874 1 2 3 4 PINNING PIN SYMBOL DESCRIPTION 1 +VO output voltage 2 GND ground 3 -VO output voltage 4 +VCC supply voltage Marking: KMZ10B PHDxx , pagewidth 4 3 2 1 VCC ­VO GND +VO Fig.2 Simplified circuit diagram. November , 4 3 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 , the static output voltage is directly proportional to the supply voltage. 4 . Sensor bridge response


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PDF KM110B/2 KM110B/2 FXD100 magnetic sensor circuit diagram "Magnetic Field Sensor" MAGNETIC SENSOR static field KMZ10B magnetic sensor marking HY SC17 Magnetic Field Sensor marking HX 6 pin
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Semiconductor Sensors Replacement list REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REPLACED BY REASON FOR DELETION KM110B/1 Discontinued KM110B/ 4 Discontinued KM110BH/11 KMI15/1 KM110BH/12 KMI15/1 KM110BH/13 KM 1 15/1 KM110BH/14 KM 1 15/1 KM110BH/31 Discontinued KM110BH/32 Discontinued KM110BH/2390 Discontinued


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PDF KM110B/1 KM110B/4 KM110BH/11 KMI15/1 KM110BH/12 KM110BH/13 KM110BH/14 KM110BH/31 KM110BH/32
magnetic speed sensor circuit diagram

Abstract: magnetic sensor circuit diagram "Magnetic Field Sensor" KMZ10 FXD100 KMZ10B 110B2 Thin-film magnetic resistance marking HY
Text: SYMBOL DESCRIPTION 1 +V0 output voltage 2 GND ground 3 -V0 output voltage 4 +VCc supply voltage .J 12 3 4 Marking: KMZ10B PHDxx. Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER MIN , output voltage - - 0.5 %-FS f operating frequency note 4 0 - 1 MHz November 1994 3 711Dfl2b DDTHHIdB 4 4 . (V0 at H = 1.6 kA/m) - (V0 at H = 0) 1.6 xV cc The sensitivity increases and


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PDF KM110B/2 KM110B/2 FXD100 KMZ10B 711Dfi2b magnetic speed sensor circuit diagram magnetic sensor circuit diagram "Magnetic Field Sensor" KMZ10 110B2 Thin-film magnetic resistance marking HY
1998 - KMA10

Abstract: SC17 Philips KM110BH KMA20 Discrete Semiconductors SC17 KTY86-205 Sensors handbook KM110BH14 "KTY86"
Text: DISCRETE SEMICONDUCTORS DATA SHEET Replacement list Semiconductor Sensors 1996 Nov 25 File under Discrete Semiconductors, SC17 Philips Semiconductors Semiconductor Sensors Replacement list REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REPLACED BY REASON FOR DELETION KM110B/1 Discontinued KM110B/ 4 Discontinued KM110BH/11 KMI15/1 KM110BH/12 KMI15/1


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PDF KM110B/1 KM110B/4 KM110BH/11 KMI15/1 KM110BH/12 KM110BH/13 KM110BH/14 KMA10 SC17 Philips KM110BH KMA20 Discrete Semiconductors SC17 KTY86-205 Sensors handbook KM110BH14 "KTY86"
magnetic sensor 21 L

Abstract: magnetic speed sensor circuit diagram magnetic sensor circuit diagram Thin-film magnetic resistance
Text: KM110B/ 4 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film , the KM110B/ 4 is magnetically trimmed during the magnetization process. The strength of the magnetic , (perpendicular to the sensor surface). Hy is zero due to the trimming process. 12 3 4 KM110B/ 4 PINNING PIN , Marking: KMZ12B PHDxx. -V 0 +Vcc 4 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Vcc , 110B/ 4 MAX. 12 120 32 +150 +150 190 V UNIT mW kA/m °C °C °C 1. It is not permitted to press


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PDF KM110B/4 FXD100 711062L. 110B/4 MGA102 magnetic sensor 21 L magnetic speed sensor circuit diagram magnetic sensor circuit diagram Thin-film magnetic resistance
KMZ10B

Abstract: MSA103 KMZ10 SOT195
Text: DESCRIPTION 1 output voltage (+) 2 ground 3 output voltage (-) 4 supply voltage (VCc) QUICK REFERENCE , . UNIT ^bfkJge bridge resistance 1.6 2.6 kiJ Va» offset voltage notes 1 and 4 -0.5 +0.5 mV/V S sensitivity notes 2 and 4 1.4 2.1 mV/v f operating frequency note 3 0 1 MHz TCV^ temperature coefficient of , reduced to eddy current effects. 4 . The output voltage is ratiometric to the supply. November 1991 33 , max - ♦ 3.0 max 0.43 " 0.37 Fig . 4 SOT195. November 1991 35 This Material Copyrighted By Its


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PDF 0032b24 KM110B/1 KMZ10B KM110B/1 MGA102 0032b27 OT195. MSA103 KMZ10 SOT195
magnetic speed sensor circuit diagram

Abstract: magnetic sensor circuit diagram kmz12b MAGNETIC SENSOR static field eddy current Sensor 110B4 Magnetic Field Sensor Thin-film magnetic resistance FXD100 permalloy
Text: Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/ 4 DESCRIPTION The KM110B/ 4 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film , the KM110B/ 4 is magnetically trimmed during the magnetization process. The strength of the magnetic , 1 +v0 output voltage 2 GND ground 3 -V0 output voltage 4 +VCc supply voltage ,J 12 3 4 Marking , / 4 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL


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PDF KM110B/4 KM110B/4 FXD100 711Gfi5t, magnetic speed sensor circuit diagram magnetic sensor circuit diagram kmz12b MAGNETIC SENSOR static field eddy current Sensor 110B4 Magnetic Field Sensor Thin-film magnetic resistance permalloy
1998 - KMZ51

Abstract: LM532 kmz51 philips KMZ10C Application Note kmz51 compass Philips application note using kmz51 KMZ10B gravity sensor compass philips KMZ10A application note
Text: strips are arranged in a meander fashion on the silicon (Fig. 4 shows one example, of the pattern on a , . , , , , , , , , , , , , , , , , , , , MBC930 Fig. 4 KMZ10 chip structure. 1998 Jun 12 4 Philips Semiconductors Magnetic field , RT 4 Table 2 2 VO GND Based on the principles described, Philips has a family of , approximately 0.5 kA/m). MLC130 handbook, halfpage VO (mV) 10 0 4 2 2 4 H y (kA/m , operating range 75 4 2 0 2 H y (kA/m) 4 Fig.10 Output voltage `Vo' of a KMZ10B sensor


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PDF KM110BH/2270 MGG457 KM110BH/22/70 KMZ10B MGG458 KMZ10B KMZ51 LM532 kmz51 philips KMZ10C Application Note kmz51 compass Philips application note using kmz51 gravity sensor compass philips KMZ10A application note
Not Available

Abstract: No abstract text available
Text: -250 280 KMI15/ 4 170 KTY82-251 280 KM110BH/2130 200 KTY82-252 280 KM110BH/2190


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PDF KM110B/2 KTY82-120 KMZ10A KTY82-121 KMZ10A1 KTY82-122 KMZ10B KTY82-150 KMZ10C KTY82-151
KMZ51

Abstract: LM532 kmz51 philips Philips application note using kmz51 Sensors handbook gravity sensor KMZ10C Application Note KMZ10A application note KMZ10B KMZ10
Text: strips are arranged in a meander fashion on the silicon (Fig. 4 shows one example, of the pattern on a , . , , , , , , , , , , , , , , , , , , , MBC930 Fig. 4 KMZ10 chip structure. 1998 Jun 12 16 Philips Semiconductors Magnetic field , RT 4 Table 2 2 VO GND Based on the principles described, Philips has a family of , approximately 0.5 kA/m). MLC130 handbook, halfpage VO (mV) 10 0 4 2 2 4 H y (kA/m , operating range 75 4 2 0 2 H y (kA/m) 4 Fig.10 Output voltage `Vo' of a KMZ10B sensor


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PDF KM110BH/2270 MGG457 KM110BH/22/70 KMZ10B MGG458 KMZ10B KMZ51 LM532 kmz51 philips Philips application note using kmz51 Sensors handbook gravity sensor KMZ10C Application Note KMZ10A application note KMZ10
philips kty87

Abstract: KTY87-205
Text: Tamb (X) (X) (X) Sensor Current (mA) 1000 to 1050 25 ± 4.0 100 2 - 4 0 to 125 990 to 1010 25 ±1.3 25 1 - 4 0 to 125 980 to 1020 25 ±2.6 25 1 25 1 Package Outline Temperature Range (X) KT Y 84 -152 SO D -68 - 4 0 to , R KTY85-121 SO D -80 - 4 0 to 125 980 to 1000 25 ±1.3 KTY85-122 SO D -80 - 4 0 to 125 1000 to 1020 25 ± 1.3 25 1 - 4 0 to 125 950 to 1050 25 Â


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PDF KTY85-120 KTY85-121 KTY85-122 110BH philips kty87 KTY87-205
SOD70 package

Abstract: KTY82/120/DG/B2,21
Text: 1.2 SOT 195 80 84 SOT195 -0.05 to +0.05 22 1.3 -2.0 to +2.0 4 2.1 , 1.5 4 2.1 SOT96 (S08) 105 KMZ41 H = 100; note 4 2.8 2.5 110 KMZ50 -0.2 , magnetic fields. 4 . Recommended field strength. SENSORS FOR CONTACTLESS ROTATIONAL SPEED MEASUREMENT AND , SOT453A 164 KMI15/ 4 2.0 0 to 25000 note 1 SOT453C 170 TYPE Notes 1 , KM110BH/2270 70 4 to 20 sinusoidal mA hybrid 206 KM110BH/2430 30 0.5 to 4.5


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PDF KM110B/2; KMZ10A KMZ10A1; OT195 KMZ10B KMZ10C KMZ41 KMZ50 SOD70 package KTY82/120/DG/B2,21
1998 - 41a Hall Effect Magnetic Sensors

Abstract: 41a hall sensor car Speed Sensor KMZ10B PM6654 car Speed Sensor circuit diagram KMI10/1 eddy current KMZ10 ABS Wheel Speed Sensor
Text: Philips Semiconductors Rotational speed measurement General Figure 4 shows a typical relationship , .) 10 (8) (1) (2) (3) ( 4 ) (5) (6) (7) 1 'Active' targets can also be used , 1 2 3 4 5 6 distance/mm (1) m = 0.5; (2) m = 0.75; (3) m = 1; ( 4 ) m = 1.25; (5) m = 2; (6) m = 2.5; (7) m = 3; (8) m = 4 . Fig. 4 1998 Jun 15 MGD861 102 handbook, halfpage 4 Typical relationship between the airgap of a KMZ10B sensor, with a back biasing magnet (8 mm


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PDF MGG481 MGG482 MGG483 MGG484 41a Hall Effect Magnetic Sensors 41a hall sensor car Speed Sensor KMZ10B PM6654 car Speed Sensor circuit diagram KMI10/1 eddy current KMZ10 ABS Wheel Speed Sensor
41a hall sensor

Abstract: 41a Hall Effect Magnetic Sensors KMZ10B eddy current braking system PM6654 41a hall sensor 125 kmi Sensor KMI10/1 KMZ10 crankshaft position sensor
Text: measurement General Figure 4 shows a typical relationship between the primary output signal (i.e. with , the General Introduction to this handbook and Appendix 2.) 10 (8) (1) (2) (3) ( 4 , `active' set-up is shown in Fig.6. 10-1 0 1 2 3 4 5 6 distance/mm (1) m = 0.5; (2) m = 0.75; (3) m = 1; ( 4 ) m = 1.25; (5) m = 2; (6) m = 2.5; (7) m = 3; (8) m = 4 . Fig. 4 , sensors in the family are the KMI15/1 and KMI15/ 4 for passive targets, and the KMI15/2 for active targets


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PDF MGG481 MGG482 MGG483 MGG484 41a hall sensor 41a Hall Effect Magnetic Sensors KMZ10B eddy current braking system PM6654 41a hall sensor 125 kmi Sensor KMI10/1 KMZ10 crankshaft position sensor
Not Available

Abstract: No abstract text available
Text: silicon (Fig. 4 shows one example, of the pattern on a KMZ10). They are connected in a Wheatstone bridge , signal output • The sensor can be aligned at the factory. MBC930 Fig. 4 KMZ10 chip structure , 0.5 kA/m). Fig.6 Sensor characteristics. MC3 L 11 v0 (mV) ‘ Hy 100’ - - . 4 50 , should be taken into account when incorporating the sensors into practical circuits. - 4 0 In , temperature (see Fig.8), which - 4 -2 0 2 4 H y (kA/m) Fig.10 Output voltage ‘V0’ of a


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PDF KMZ10 KMZ11
Brain wave signal sensor

Abstract: KMZ10C Sm2CO17 MLC127 KMZ10C Application Note UZZ9000 Sensors handbook KMZ10B KMZ10 Sm2Co17-magnets
Text: can to be extended to ±35° (see Fig. 4 ). Resolution is reduced at the ends of the range, but , angle deg. MBH659 KMZ10B Fig. 4 Angle measurement with a KMZ10B. 1997 Jan 09 180 , output signal ( 4 to 20 mA), which can be converted to a voltage signal using a simple resistor. The , V - - 4 to 20 - - mA linear sinusoidal sinusoidal linear sinusoidal , 3 4 Philips Semiconductors Sensor systems General Extending measurement angle to


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PDF
1998 - Brain wave signal sensor

Abstract: KMZ10C Application Note sensor systems potentiometer Sm2CO17 BARBER pedal sensor KMZ41 KMZ10C KMZ10 Designing With Magnetoresistive Sensors
Text: relationship), the angle range can to be extended to ±35° (see Fig. 4 ). Resolution is reduced at the ends of , 90 135 180 angle deg. MBH659 KMZ10B Fig. 4 Angle measurement with a KMZ10B. 1997 Jan 09 4 Philips Semiconductors Sensor systems General magnet handbook, full , modules in the KM110BH/2 range, the KM110BH/2270 has an analog current output signal ( 4 to 20 mA), which , Output current - - 4 to 20 - - mA linear sinusoidal sinusoidal linear


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PDF
bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: . (401) 762-3800 4 Alphanumeric Type Index Type BF822 BF823 BF824 BF840 BF841 BF857 BF858 BF859


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PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
43a hall sensor

Abstract: 43a Hall Effect Magnetic Sensors eddy current braking
Text: speed measurement General Figure 4 shows a typical relationship between the primary output signal , /mm (1) m = 0.5; (2) m = 0.75; (3) m = 1; ( 4 ) m = 1.25; (5) m = 2; (6) m = 2.5; (7) m = 3; (8) m = A. Fig. 4 1996 Dec 06 126 Typical relationship between the airgap of a KMZ1 OB sensor , KMI15/1 and KMI15/ 4 for passive targets, and the KMI15/2 for active targets. For passive set-ups, the , Fig.10 Typical outline of a KMI15/ 4 rotational sensor module for passive targets. 1996 Dec 06


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PDF MGG481 MGG482 MGG483 MGG484 43a hall sensor 43a Hall Effect Magnetic Sensors eddy current braking
Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Text: \/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22 4 -| gnd in|- 21 5 - , -063 +-\/-+ 1 -|sc dc|- 8 2 -|se ipk|- 7 3 -|tc Vcc|- 6 4 -|gnd cii|- 5 +-+ 1005 -1005 +-\/-+ 1 -|1A Vcc|- 14 2 -|1/Y 6A|- 13 3 -|2A 6/Y|- 12 4 -|2/Y 5A|- 11 5 -|3A 5/Y|- 10 6 -|3/Y 4A|- 9 7 -|gnd 4 /Y|- 8 +-+ 10474 , - DO2 | 10 - A4 | 17 - A8 | 24 - DI2 | | 4 - DO3 | 11 - A5 | 18 - A9 | 25 - DI3 | | 5 - A0


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PDF 0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
TH20594MC1.4

Abstract: TH3169.4 XN203M-V1.4 SUN4004BS-8.4 L6262-2.4 guardmaster+atlas+4 LT1731EMS8-8.4 PEF22622FV1.4 PSB21150FV1.4 schrack+ra+4
Text: 4 3 THIS DRAWING IS UNPUBLISHED. 7W\ W COPYRIGHT 2009 RELEASED FOR PUBLICATION BY , 0 ) APVD WK NOTES 1 MATERIAL: HOUSING: NYLON 66, U L 9 4 V - 0 , COLOR: SEE TABLE , ' C PER TEST SPEC. 1 0 9 - 2 0 2 , CONDITION B. RAISED TYPE PN: 9 - 4 4 0 0 5 4 - 2 LOGO , 4P 3P 2P 16P 15P 14P 13P 12P 11P 10P 9P 8P 7P 6P 5P 4P 3P 2P POS. 8 - 4 4 0 0 5 4 -9 8 - 4 4 0 0 5 4 -8 8 - 4 4 0 0 5 4 -7 8 - 4 4 0 0 5 4 -6 6 - 4 4 0 0 5 4 -9 6 - 4 4 0 0 5 4 -8 6


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PDF MAR11 TH20594MC1.4 TH3169.4 XN203M-V1.4 SUN4004BS-8.4 L6262-2.4 guardmaster+atlas+4 LT1731EMS8-8.4 PEF22622FV1.4 PSB21150FV1.4 schrack+ra+4
2005 - TH3169.4

Abstract: TH20594MC1.4 C1206 KEMET G150XTN06.4 CDR35BX124B XN203M-V1.4 CDR32 CDR31 CDR03 CDR01-CDR06
Text: -55681 PART NUMBER 100 Volt - C1808 SIZE (MILITARY CDR03) (Cont'd) 560 J C1808P561J1G( 4 )C CDR03BP561BJW( 4 ) 680 J,K C1808P681(3)1G( 4 )C CDR03BP681B(3)W( 4 ) 820 J C1808P821J1G( 4 )C CDR03BP821BJW( 4 ) 1,000 J,K C1808P102(3)1G( 4 )C CDR03BP102B(3)W( 4 ) 12,000 K C1808P123K1X( 4 )C CDR03BX123BKW( 4 ) 15,000 K,M C1808P153(3)1X( 4 )C CDR03BX153B(3)W( 4 ) 18,000 K C1808P183K1X( 4 )C CDR03BX183BKW( 4 ) 22,000 K,M C1808P223(3)1X( 4 )C CDR03BX223B(3)W( 4 ) 27,000 K C1808P273K1X( 4 )C CDR03BX273BKW( 4 ) 33,000 K,M C1808P333(3)1X( 4 )C


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PDF CHIP/MIL-PRF-55681 CDR01 CDR02 CDR03 CDR04 C0805 C1805 C1808 C1812 CDR05 TH3169.4 TH20594MC1.4 C1206 KEMET G150XTN06.4 CDR35BX124B XN203M-V1.4 CDR32 CDR31 CDR03 CDR01-CDR06
1999 - L6262-2.4

Abstract: schrack+ra+4
Text: 0.50 ­­­ 1.0 OM­­­ ­­­ 2.0 ON­­­ 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4


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2011 - Not Available

Abstract: No abstract text available
Text: RESISTANCE : 25m MAX. INSERTION FORCE : 0.75 N MAX / CONT EXTRACTION FORCE : 0.15 N MIN / CONT 4 INSULATION RESISTANCE : 10 M MIN. 4 A 8.00 (4X2.0) A 2.00 0.05 2.00 0.05 (24X) 48.00 49.90 NOTES : 1 , . HOUSING : LCP 30% GLASS-FILLED. 4 . CONNECTOR PRINTED WITH P/N AND DATE CODES. 5. FOR ACTUAL CONTACT LOADINGS, SEE LOADING PATTERN MATING SIDE.} 6. 4 = LEVEL 1 (5.30) 5 = LEVEL 2 (6.80) 6 = LEVEL 3 (8.30) LEAD FREE INDICATOR : LF = LEAD FREE 15.40 0.50 B 11.60 +0.20 0 NOTE 2 NOTE 4 NOTE 5 B


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PDF B20190 I05-0108 I06-0107 I08-0050 I10-0098 I11-0044 I11-0044 HM2J08PE5110---- BSC202767003
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