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KHB2D0N60P datasheet (1)

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KHB2D0N60P Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

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2007 - khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Text: SEMICONDUCTOR KHB2D0N60P /F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast , RATING TO-220AB CHARACTERISTIC SYMBOL KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 VDSS 600 , 1/7 KHB2D0N60P /F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL TEST , temperature. 2007. 5. 10 Revision No : 0 2/7 KHB2D0N60P /F/F2 Fig1. ID - VDS Fig2. ID - VGS


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PDF KHB2D0N60P/F/F2 KHB2D0N60P Fig15. Fig16. Fig17. khb*2D0N60P KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
2006 - khb*2D0N60P

Abstract: KHB2D0N60F equivalent KHB2D0N60F KHB2D0N60P AVALANCHE TRANSISTOR
Text: SEMICONDUCTOR KHB2D0N60P /F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR , -220AB RATING CHARACTERISTIC SYMBOL UNIT KHB2D0N60P KHB2D0N60F Drain-Source Voltage VDSS 600 , temperature. G S 2005. 10. 24 Revision No : 1 1/7 KHB2D0N60P /F ELECTRICAL CHARACTERISTICS , KHB2D0N60P /F ID - VGS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 1 6.5 V 10 6.0 V 5.5 V 5.0 V , Revision No : 1 3/7 KHB2D0N60P /F Qg - VGS C - VDS 12 Capacitance (pF) Frequency = 1MHz


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PDF KHB2D0N60P/F khb*2D0N60P KHB2D0N60F equivalent KHB2D0N60F KHB2D0N60P AVALANCHE TRANSISTOR
2007 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR KHB2D0N60P /F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast , CHARACTERISTIC SYMBOL UNIT KHB2D0N60P KHB2D0N60F KHB2D0N60F 600 V Gate-Source Voltage VGSS , . G S 2007. 3. 26 Revision No : 2 1/7 KHB2D0N60P /F ELECTRICAL CHARACTERISTICS (Tc , ) Essentially independent of operating temperature. 2007. 3. 26 Revision No : 2 2/7 KHB2D0N60P /F


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PDF KHB2D0N60P/F KHB2D0N60P
2010 - khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N mosfet 600v 10a to-220ab KHB2D0N60F equivalent
Text: SEMICONDUCTOR KHB2D0N60P /F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast , =25) Q RATING CHARACTERISTIC SYMBOL TO-220AB KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 600 , Revision No : 2 1/7 KHB2D0N60P /F/F2 ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL , temperature. 2010. 5. 7 Revision No : 2 2/7 KHB2D0N60P /F/F2 Fig1. ID - VDS Fig2. ID - VGS


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PDF KHB2D0N60P/F/F2 KHB2D0N60P Fig15. Fig16. Fig17. khb*2D0N60P KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N mosfet 600v 10a to-220ab KHB2D0N60F equivalent
khb*2D0N60P

Abstract: KHB2D0N60P 11T-H KHB2D0N
Text: SEMICONDUCTOR KHB2D0N60P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking. 2. Marking KHB2D0N 60P 1 511 No. 2 Item Marking Description Device Name KHB2D0N60P KHB2D0N60P Lot No. 511 5 Revision No : 1 0~9 : 2000~2009 11 2005. 10. 13 Year Week 11 : 11th Week 1/1 -


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PDF KHB2D0N60P O-220AB khb*2D0N60P KHB2D0N60P 11T-H KHB2D0N
2006 - khb*2D0N60P

Abstract: No abstract text available
Text: SEMICONDUCTOR KHB2D0N60P /F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR , -220AB RATING KHB2D0N60P KHB2D0N60F UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage , No : 0 1/7 KHB2D0N60P /F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL , of operating temperature. 2006. 1. 13 Revision No : 0 2/7 KHB2D0N60P /F ID - VDS ID , Temperture Tj ( C ) 2006. 1. 13 Revision No : 0 3/7 KHB2D0N60P /F Qg - VGS C - VDS 12


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PDF KHB2D0N60P/F khb*2D0N60P
2013 - O2W transistor

Abstract: No abstract text available
Text: SEMICONDUCTOR KHB2D0N60P /F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast , CHARACTERISTIC SYMBOL KHB2D0N60P KHB2D0N60F UNIT KHB2D0N60F2 Drain-Source Voltage VDSS 600 , : 2 1/7 KHB2D0N60P /F/F2 ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL , ) Essentially independent of operating temperature. 2010. 5. 7 Revision No : 2 2/7 KHB2D0N60P /F/F2


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PDF KHB2D0N60P/F/F2 KHB2D0N60P KHB2D0N60F KHB2D0N60F2 KHB2D0N60F O2W transistor
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR KHB2D0N60P /F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES 2010. 5. 7 Revision No : 2 1/7 -


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PDF KHB2D0N60P/F/F2
9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
Text: ) 3.8 - - DPAK/IPAK Charger M/P KHB2D0N60P /F 2N60 2.0 ± 30 2.0 (min , KHB1D0N60D/I 600V 1A M/P Charger KHB2D0N60P /F 600V 2A Charger, Adaptor KHB4D5N60P/F , KHB8D8N25P/F KHB6D0N40P/F KHB011N40P/F KHB5D0N50P/F KHB9D0N50P/F KHB020N50 KHB1D0N60D/I KHB2D0N60P /F , KHB9D0N50P1 500 9 135 0.65 0.8 10 4.5 34.6 10 KHB2D0N60P 600 2 54


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PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: 500 5.0 1.5 840 TO-220AB/IS 500 8.0 0.8 KHB2D0N60P /F 2N60 TO-220AB/IS


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PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KHB2D0N60P MOSFET KEC KIA278R050FP Intergrated Circuit KEC KIA578R025FP Intergrated


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PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet khb*2D0N60P KIA7812API
Text: Diode KEC KHB2D0N60P MOSFET KEC KIA278R050FP Intergrated Circuit KEC


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PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet khb*2D0N60P KIA7812API
MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: No file text available


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oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: KHB019N20F KHB019N20P KHB1D0N60D KHB1D0N60I KHB1D9N60D KHB1D9N60I KHB2D0N60F KHB2D0N60P KHB3D0N80F


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PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
2006 - RG 2006 10A 600V

Abstract: No abstract text available
Text: characteristics. It is mainly suitable for switching mode power supplies. KHB2D0N60P1 /F1 N CHANNEL MOS FIELD , Dissipation Tc=25 Derate above25 ) RATING SYMBOL KHB2D0N60P1 KHB2D0N60F1 VDSS VGSS ID IDP EAS EAR dv/dt PD , . 13 Revision No : 0 1/7 KHB2D0N60P1 /F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC , : 0 2/7 KHB2D0N60P1 /F1 ID - VDS 10 1 VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 0 5.5 V 10 , Revision No : 0 3/7 KHB2D0N60P1 /F1 C - VDS 700 12 Qg - VGS Gate - Source Voltage VGS (V


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PDF KHB2D0N60P1/F1 RG 2006 10A 600V
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