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2012 - KF7N50

Abstract: KF7N50D KF7N50I
Text: (Min.)= 500V, ID= 5.5A ·RDS(ON)=1.0 (Max) @VGS =10V ·Qg(typ.) =16nC KF7N50D /I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N50D MAXIMUM RATING (Tc=25) CHARACTERISTIC Drain-Source Voltage Gate-Source , SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING KF7N50D /I 500 ±30 5.5 3.5 21 DIM A B UNIT V V A KF7N50I C H J D A MILLIMETERS B 180 4 4.5 69.4 0.56 150 -55150 mJ K M , : 0 1/6 KF7N50D /I ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN


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PDF KF7N50D/I KF7N50D above25 dI/dt100A/, KF7N50 KF7N50D KF7N50I
KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER kid65003ap equivalent KIA278R12PI equivalent Kf10n60 kia578r05
Text: No file text available


Original
PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER kid65003ap equivalent KIA278R12PI equivalent Kf10n60 kia578r05
2011 - KF7N50

Abstract: KF7N50F KF7N50P 16nC
Text: RATING KF7N50P 500 ±30 7* 4.4* 21* mJ mJ V/ns W W/ A KF7N50F UNIT V V KF7N50F Maximum Junction , (Min.)= 500V, ID= 7A ·RDS(ON)=1.0 (Max) @VGS =10V ·Qg(typ.) =16nC KF7N50P /F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N50P DIM MAXIMUM RATING (Tc=25) CHARACTERISTIC Drain-Source Voltage , KF7N50P /F ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT , . 23 Revision No : 0 2/2 KF7N50P /F 2011. 6. 23 Revision No : 0 3/7 KF7N50P /F


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PDF KF7N50P/F KF7N50P above25 dI/dt100A/, KF7N50 KF7N50F KF7N50P 16nC
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