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2011 - KF6N60

Abstract: KF6N60F 16nC KF6N60P
Text: KF6N60P 600 ±30 6* 3.8* 15* mJ mJ V/ns W W/ A KF6N60F UNIT V V KF6N60F Maximum Junction Temperature , (Min.)= 600V, ID= 6A ·RDS(ON)=1.4 (Max) @VGS =10V ·Qg(typ.) =16nC KF6N60P /F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60P MAXIMUM RATING (Tc=25) CHARACTERISTIC Drain-Source Voltage Gate-Source , temperature. PIN CONNECTION 2011. 6. 30 Revision No : 0 1/2 KF6N60P /F ELECTRICAL , Revision No : 0 2/2 KF6N60P /F 2011. 6. 30 Revision No : 0 3/7 KF6N60P /F 2011. 6. 30


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PDF KF6N60P/F KF6N60P above25 EAR300V, dI/dt100A/, KF6N60 KF6N60F 16nC KF6N60P
KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER kid65003ap equivalent KIA278R12PI equivalent Kf10n60 kia578r05
Text: No file text available


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PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER kid65003ap equivalent KIA278R12PI equivalent Kf10n60 kia578r05
2011 - KF6N60

Abstract: KF6N60I KF6N60D
Text: (Min.)= 600V, ID= 5A ·RDS(ON)=1.4 (Max) @VGS =10V ·Qg(typ.) =16nC KF6N60D /I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D MAXIMUM RATING (Tc=25) CHARACTERISTIC Drain-Source Voltage Gate-Source , SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING KF6N60D /I 600 ±30 5 3.15 15* 180 4 4.5 69.4 0.56 150 -55150 mJ mJ V/ns W W/ A UNIT V V KF6N60I Maximum Junction Temperature Storage Temperature , . PIN CONNECTION 2011. 7. 25 Revision No : 0 1/6 KF6N60D /I ELECTRICAL CHARACTERISTICS (Tc


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PDF KF6N60D/I KF6N60D above25 dI/dt100A/, KF6N60 KF6N60I KF6N60D
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