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Samsung Semiconductor
K9W8G08U1M-PCB0
K9W8G08U1M-PCB0 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics K9W8G08U1M-PCB0 64 - - - - - More Info
Samsung Electronics Co. Ltd
K9W8G08U1M-PCB0
K9W8G08U1M-PCB0 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
New Advantage Corporation K9W8G08U1M-PCB0 930 1 $16.5 $16.5 $16.5 $16.5 $16.5 More Info

K9W8G08U1M datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
K9W8G08U1M K9W8G08U1M ECAD Model Samsung Electronics 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Original PDF
K9W8G08U1M-PCB0 K9W8G08U1M-PCB0 ECAD Model Samsung Electronics 512M x 8 Bit NAND Flash Memory Original PDF
K9W8G08U1M-PCB0 K9W8G08U1M-PCB0 ECAD Model Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 8GBIT 1GX8 20NS 48TSOP-I Original PDF
K9W8G08U1M-PIB0 K9W8G08U1M-PIB0 ECAD Model Samsung Electronics 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Original PDF
K9W8G08U1M-YCB0 K9W8G08U1M-YCB0 ECAD Model Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 8GBIT 1GX8 20NS 48TSOP-I Original PDF
K9W8G08U1M-YIB0 K9W8G08U1M-YIB0 ECAD Model Samsung Electronics IC FLASH MEM PARL 2.7V TO 3.6V 8GBIT 1GX8 20NS 48TSOP-I Original PDF

K9W8G08U1M Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - SAMSUNG 4gb NAND Flash Qualification Report

Abstract: Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9K4G08U0M-PCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
Text: MIN K9W8G08U1M K9K4G08U0M FLASH MEMORY PIN CONFIGURATION (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0 , K9K4G08U0M-PCB0,PIB0 K9K4G16U0M-PCB0,PIB0 K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0 ,PIB0 Apr. 30. 2003 , / 1G x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9K4G08U0M-Y,P K9W8G08U1M-Y ,P Vcc Range , pitch) - K9W8G08U1M-YCB0 /YIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9K4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-PCB0 /PIB0 : Two


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PDF K9W8G08U1M K9K4G08U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16U0M-PCBess 200mV SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
2005 - K9K4G08U0M

Abstract: No abstract text available
Text: K9K4G08U0M-PCB0,PIB0 K9K4G16U0M-PCB0,PIB0 K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0 ,PIB0 Apr. 30. 2003 , / 1G x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9K4G08U0M-Y,P K9W8G08U1M-Y ,P Vcc Range , TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-YCB0 /YIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 , pitch) - K9W8G08U1M-PCB0 /PIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch , CONFIGURATION (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R/B1 RE CE1 CE2 N.C


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PDF K9W8G08U1M K9K4G08U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16U0M-PRead 200mV K9K4G08U0M
2004 - K9XXG08XXM

Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9K4G08Q0M-PCB0 K9K4G16Q0M k9w8g16u1m K9K4G08Q0M K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16U0M K9W8G08U1M
Text: K9W8G08U1M-PCB0 ,PIB0 Apr. 30. 2003 Preliminary 0.4 1. Added Addressing method for program operation , mm pitch) - K9W8G08U1M-YCB0 /YIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9XXGXXXXM-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-PCB0 /PIB0 : Two , MEMORY PIN CONFIGURATION (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R/B1 , K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title


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PDF K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0 K9XXG08XXM SAMSUNG 4gb NAND Flash Qualification Report K9K4G08Q0M-PCB0 K9K4G16Q0M k9w8g16u1m K9K4G08Q0M K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16U0M K9W8G08U1M
2005 - K9W8G08U1M-YCB0

Abstract: K9K4G08U0M-XIB0 SAMSUNG 4gb NAND Flash Qualification Report K9K4G08U0M
Text: K9W8G08U1M K9K4G08U0M PIN CONFIGURATION (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R , K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0 ,PIB0 1. Added Addressing method for program operation. 1. The tADL(Address to , Package : - K9K4G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-YCB0 /YIB0 : Two , / 0.5 mm pitch) - K9W8G08U1M-PCB0 /PIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch , K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash


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PDF K9W8G08U1M K9K4G08U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16U0M-PCB0 K9K4G16Q0M-PCB0 K9W8G08U1M-PCB0 K9W8G08U1M-YCB0 K9K4G08U0M-XIB0 SAMSUNG 4gb NAND Flash Qualification Report K9K4G08U0M
2003 - K9XXG08XXM

Abstract: k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M
Text: K9W8G08U1M-PCB0 ,PIB0 Apr. 30. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG , Protection ยท Package : - K9XXGXXXXM-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-YCB0 , Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-PCB0 /PIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I , (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R/B1 RE CE1 CE2 N.C Vcc Vss , K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document


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PDF K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0, K9XXG08XXM k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M
2005 - K9K4G08U0M-XIB0

Abstract: K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M-PCB0 K9K4G08U0M
Text: K9W8G08U1M K9K4G08U0M PIN CONFIGURATION (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R , K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0 ,PIB0 1. Added Addressing method for program operation. 1. The tADL(Address to , K9K4G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-YCB0 /YIB0 : Two K9K4G08U0M stacked. 48 , ) - K9W8G08U1M-PCB0 /PIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) GENERAL , K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash


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PDF K9W8G08U1M K9K4G08U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16U0M-PCB0 K9K4G16Q0M-PCB0 K9W8G08U1M-PCB0 K9K4G08U0M-XIB0 K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M
2003 - SAMSUNG 4gb NAND Flash Qualification Report

Abstract: K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
Text: K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0 ,PIB0 Apr. 30. 2003 Advance The attached data sheets are prepared , K9W8G08U1M-YCB0 /YIB0 : Two K9K4G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9XXGXXXXM-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W8G08U1M-PCB0 /PIB0 : Two K9K4G08U0M stacked. 48 - Pin , PIN CONFIGURATION (TSOP1) K9W8G08U1M-YCB0 ,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R/B1 RE , K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document


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PDF K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M K9W8G16U1M-YCB0 K9K4G08Q0M-PCB SAMSUNG 4gb NAND Flash Qualification Report K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
K9F1G08U0A

Abstract: SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics
Text: , K9F5608U0C. - 19 - CSBN connect to Flash CE2 (Flash chip enable2) (R1: open) K9W8G08U1M K9W4G08U1M


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PDF W86L157 W86L157 48-pin produ480, K9F1G08U0A SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics
2005 - K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: K9F1G08U0A-PCB K9F2G08U0M-PCB K9K4G08U0M-PCB K9W8G08U1M-PCB Speed (ns) 50 50 50 50 30 30 30


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PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: K9F2808U0C-YCB0 K9F5608U0C-YCB0 K9F1208U0A-YCB0 K9F1G08U0A-YCB K9F2G08U0M-YCB K9K4G08U0M-YCB K9W8G08U1M-YCB


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PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
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