K4R271669B |
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Samsung Electronics
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Direct RDRAM Data Sheet |
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Original |
PDF
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K4R271669B |
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Samsung Electronics
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256K x 16/18 bit x 32s banks Direct RDRAM |
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Original |
PDF
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K4R271669B-MCG6 |
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Samsung Electronics
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256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
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Original |
PDF
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K4R271669B-MCK7 |
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Samsung Electronics
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256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
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Original |
PDF
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K4R271669B-MCK8 |
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Samsung Electronics
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256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
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Original |
PDF
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K4R271669B-Nb(M)CcK8 |
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Samsung Electronics
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256K x 16/18 bit x 32s banks Direct RDRAM |
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Original |
PDF
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K4R271669B-NCG6 |
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Samsung Electronics
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256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
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Original |
PDF
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K4R271669B-NCK7 |
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Samsung Electronics
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256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
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Original |
PDF
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K4R271669B-NCK8 |
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Samsung Electronics
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256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
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Original |
PDF
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K4R271669B-N(M)CG6 |
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Samsung Electronics
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256K x 16/18 bit x 32s banks Direct RDRAM |
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Original |
PDF
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K4R271669B-N(M)CK7 |
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Samsung Electronics
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256K x 16/18 bit x 32s banks Direct RDRAM |
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Original |
PDF
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K4R271669B-SCK8 |
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Samsung Electronics
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128Mbit RDRAM(B-die) 256K x 16 bit x 32s Banks Direct RDRAM |
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Original |
PDF
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K4R271669B-VCK7 |
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Samsung Electronics
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DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin |
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Original |
PDF
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K4R271669B-VCK8 |
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Samsung Electronics
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DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin |
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Original |
PDF
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K4R271669B-YCK8 |
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Samsung Electronics
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128Mbit RDRAM (B-die) |
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Original |
PDF
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