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    K4E151612C-JL60 Search Results

    K4E151612C-JL60 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RJL60S5DPP-E0#T2 Renesas Electronics Corporation 600V - 20A - Sj MOSFET High Speed Power Switching, TO-220FP, /Tube Visit Renesas Electronics Corporation
    RJL60S5DPK-M0#T0 Renesas Electronics Corporation 600V - 20A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    RJL6012DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 1100Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJL6018DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 600V 27A 265Mohm To-3P Visit Renesas Electronics Corporation
    RJL6015DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 600V 19A 410Mohm To-3P Visit Renesas Electronics Corporation
    RJL60S5DPE-00#J3 Renesas Electronics Corporation 600V - 20A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation

    K4E151612C-JL60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4E151612C-JL60 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF