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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

JH transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor MJH 11020

Abstract: mjh11021 transistor MJH 11021 JH transistor
Text: Temperature Range Symbol VCEO VCB veb M JH 11017* M JH 11019* M JH 11021* M JH 11018* M JH 11020* M , oice s (or future use and best overall value. Motorola Bipolar Power Transistor Device Data 3-825 , Power Transistor Device Data MJH11017 M JH11019 M JH11021 M JH11018 M JH11020 MJH11022 0.02 0.03 , ) There are two limitations on the power handling ability of a transistor : average junction temperature and second break down. Safe operating area curves indicate lc - Vc e H TM *8 of the transistor that


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PDF MJH11020 MJH11022 MJH11017 JH11019 MJH11021 JH11018 JH11020 MJH11022 MJH11017 transistor MJH 11020 transistor MJH 11021 JH transistor
Not Available

Abstract: No abstract text available
Text: devices use a low-cost, external, N-channel MOSFET power switch or NPN transistor , and can be configured , t t = 10V L1 = 100| jH , Vo u t = 22.3V, T a = + 2 5 ‘C, unless otherwise noted.) k -F /O O R v s , Switching-Voltage Sense Input 15 15 DLO External Transistor Drive, Low 16 8 MAX1621 16 DHI External Transistor Drive, High Logic-Level Input. A rising edge on DN decreases | Vo u t I , external N-channel FET or NPN transistor to convert power from a 1.8V to 20V battery to a higher positive


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PDF MAX1620/MAX1621 MAX1620/ MAX1621
2N6678 motorola

Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Text: ) from seating plane for 10 s m ax Sym bol Vcev VCEX VcEO vebo 2 N 6676 M JH 6 6 7 6 450 350 300 2 N 6677 M JH 6 6 7 7 550 400 350 8 15 20 5 235 2 N 6678 M JH 6 6 7 8 650 450 400 Unit V dc V dc , 1 - 65 to + 200 125 - 65 to + 1 5 0 M JH 6 6 7 6 M JH 6 6 7 7 M JH 6 6 7 8 Unit °DW W atts wrc °C C A S E 340-01 T O -2 1 8 A C M JH 6676 M JH 6 6 7 7 M JH 6678 R e jc PT TJ ' T stg 3-250 , ) Collector-Em itter S u sta in in g V oltage d c = 15 A, V cE (p k) = V cia m p = Rated V CEX> 2N6676, M JH 6 6


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PDF T-33-13 2IM6648 2N6676 2N6677 2N6678 MJH6676 MJH6677 MJH6678 2N6676, 2N6677, 2N6678 motorola Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Not Available

Abstract: No abstract text available
Text: below 200m V Return for the NMOS output transistor GND SENSE vL RESET 4 DETECT 8 PWR , and creates a pulse at the gate o f the NMOS transistor Q 1 . The NMOS transistor w ill charge the , greater than 100| JH , the operation o f the synchronous rectifier becomes unreliable because the inductor , transistor releases the V l pin, allow ing the inductor to fly-back and m om entarily charge the output through the body diode o f PMOS transistor Q2. But as the voltage across the PMOS transistor changes


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PDF ML4950 L4950 100kHz, ML4950
Not Available

Abstract: No abstract text available
Text: interface. These devices use a low-cost, external, N-channel MOSFET power switch or NPN transistor , and , | jH , V q u t = 22.3V, Ta = +25°C, unless otherwise noted.) k-FACTORvs.VsATT \ 0 5 10 , DLO External Transistor Drive, Low 16 16 DHI External Transistor Drive, High , an external N-channel FET or NPN transistor to convert power from a 1,8V to 20V battery to a higher , transistor . The FET turns off {_CDON = float) if power-OK voltage (POK) falls below IV. In the MAXI 621


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PDF MAX1620/ MAXI620 MAX1621
18ph

Abstract: Transistor 596 SJ
Text: 200mV Return for the N M O S output transistor DETECT 8 PW R GND 2 Micro Linear , a pulse at the gate of the N M O S transistor Q 1 . The NMOS transistor will charge the inductor LI , . When the one-shot times out, the N M OS transistor releases the V l pin, allowing the inductor to fly-back and momentarily charge the output through the body diode of PMOS transistor Q2. But as the voltage across the PM O S transistor changes polarity, its gate will be driven low by the current sense amplifier


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PDF ML4951 ML4951 100kHz, 18ph Transistor 596 SJ
15P D-SUB analog RGB

Abstract: TRANSISTOR c 5578 B AU Optronics TFT HATTELAND JH transistor VSD100692-4 EN60945 en 60945 capacitive touch screen 1680x1050
Text: (MMD) Type: JH 22T11 MMD-xxx-Axxx Last Revised: Revision#: 27 May 2011 19 22.0 inch , PRODUCT SPECIFICATIONS - JH 22T11 MMD-xxx-Axxx Note: All specifications are subject to change without , Film Transistor (TFT) RGB Vertical Stripe TFT Characteristics: · · · · · · · · Native , 24 VDC - JH 22T11 MMD-Axx-xxxx - JH 22T11 MMD-Dxx-xxxx Power Consumption: Operating - 85W (TYP) - 100W (MAX) Typical Type Numbers: · JH 22T11 MMD-AA1-AAAA · JH 22T11 MMD-AA1-AOAC · JH


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PDF 22T11 22TSV com/pdflink/ind100780-1 15P D-SUB analog RGB TRANSISTOR c 5578 B AU Optronics TFT HATTELAND JH transistor VSD100692-4 EN60945 en 60945 capacitive touch screen 1680x1050
D-SUB FOR VGA Amphenol

Abstract: 15P D-SUB analog RGB from DVI input to RGB output VGA iec 60945 HATTELAND TRANSISTOR c 5578 B VSD100692-3 EN60945 vga cutout dimensions VSD100692-4
Text: (MMD) Type: JH 26T11 MMD-xxx-Axxx Last Revised: Revision#: 27 May 2011 13 26.0 inch , mail@hatteland-display.com - www.hatteland-display.com 1/2 PRODUCT SPECIFICATIONS - JH 26T11 MMD-xxx-Axxx Note: All , , Active Matrix, Thin Film Transistor (TFT) RGB Vertical Stripe Native Resolution Pixel Pitch (RGB , 115&230VAC - 50/60Hz · 115&230VAC - 50/60Hz + 24 VDC - JH 26T11 MMD-Axx-xxxx - JH 26T11 MMD-Mxx-xxxx* Power Consumption: Operating : TBD (TYP) - 185W (MAX) Typical Type Numbers: · JH 26T11


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PDF 26T11 26BRD EN6095 26TBR 26TSV 26VED 26TWC D-SUB FOR VGA Amphenol 15P D-SUB analog RGB from DVI input to RGB output VGA iec 60945 HATTELAND TRANSISTOR c 5578 B VSD100692-3 EN60945 vga cutout dimensions VSD100692-4
MS 1117 ADC

Abstract: MJ12004 MJH12004 mjh12
Text: HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTORS 1600 VOLTS 100 WATTS . . . specifically , a rra ts tm HU 3U 7 21« V6 IB O il 1« in 140 tUSSSC I3B 8S C S«R C it a BSC tm 1Î.IJ 4.1$ JH H !J to , m M SI ave io sa 9190 am m ss - CASE 1-06 TO-204AA (TO-3) M JH 12004 W/°C °C T st9 , into account. If the base of the output transistor is driven by a very low impedance source, the , the transistor is still conductive. This is a high dissipa tion mode,since the collector voltage is


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PDF MJ12004 MJH12004 J12004 MS 1117 ADC MJH12004 mjh12
L4850

Abstract: No abstract text available
Text: , or when DETECT goes below V ref Return for the NMOS output transistor VL RESET GND DETECT 8 , captures the A1 set signal and creates a pulse at the gate o f the NMOS transistor Q 1 . The NMOS transistor w ill charge the inductor LI for 5|Js, resulting in a peak current given by: _ tp N x M L( PEAK , the one-shot times out, the NMOS transistor releases the V l pin, allow ing the inductor to fly-back and m om entarily charge the output through the body diode o f PMOS transistor Q2. But as the voltage


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PDF ML4850 L4850 100kHz,
30L SOT-23

Abstract: 2SD1628G MA721 RB111C RN5RK301A RN5RK301B
Text: driver transistor to have low ON resistance (Lx switch), a reference voltage unit, a high speed , chip as what is employed in the RN5RKXX1A/ IB IC and has a drive pin (EXT) for an external transistor instead of an Lx pin. As it is po ssible to load a large output current with a power transistor which has , Driver Transistor with Low ON Resistance • Two Kinds of Duty Ratio , (SBD) Capacitor (Cl) Transistor (Tr) Base Resistor (Rb) Base Capacitor ( Cb) 27pH (SumidaElectric Co


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PDF RN5RK302A OT-23-5 30L SOT-23 2SD1628G MA721 RB111C RN5RK301A RN5RK301B
BLV30

Abstract: DB2-24 sot122
Text: PHILIPS INTERNATIONAL bSE D m 711GÖ5b OOt.2054 521 BLV30 _A_ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for , transistor has a Ve." capstan envelope with ceramic cap. All leads are isolated from the stud. QUICK , Material Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL V.H.F. linear power transistor 8 Rth j-h (K/W) b5E D B 711üö£hi DOLSÖSb 3T4 BLV30 IPHIN J Tu = 120 °C 100 °C


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PDF BLV30 BLV30 DB2-24 sot122
Not Available

Abstract: No abstract text available
Text: PNP bipolar transistor drivers. The 4V to 24V input operation range allows the SC1650 to be powered , mode (8|iA typical) High efficiency with low cost external PNP bipolar transistor APPLICATIONS â , V + — I - 1 r~ - — VOUT= -30V I OUT= -10mA L=300( jH 4^+ L=220( jH L=150( jH lu , external PNP bipolar transistor , connect a resistor RB from this pin to DHI. RB value depends upon V+, inductor value and the PNP bipolar transistor . By adjusting the RBvalue, efficiency can be optimized


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PDF SC1650 L805-498-2111 SC1650
Not Available

Abstract: No abstract text available
Text: of Power Transistor . For stepdown configuration, connect to Vjn. For step-up configuration, connect to an inductor/diode. Emitter Node of Power Transistor . For stepdown configuration, connect to , transistor are accessible on the ADP1111, the output voltage can be higher, lower, or of opposite polarity , | jH to 100 | jH with a saturation current rating of 300 mA to 1 A and dc resistance <0.4 £2 is , AO output is an open collector N PN transistor that can sink 300 |jA. CALCULATING THE INDUCTOR


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PDF ADP1111
Not Available

Abstract: No abstract text available
Text: PNP bipolar transistor drivers. The 4V to 24V input operation range allows the SC1650 to be powered , efficiency with low cost external PNP bipolar transistor APPLICATIONS · Negative LCD contrast bias for 1 , =300( jH L=220( jH 4^+ L=150( jH lu 85 80 4 6 8 10 12 14 16 18 20 22 24 V +(V) V +(V) V , MOSFET. When using an external PNP bipolar transistor , connect a resistor RBfrom this pin to DHI. RB value depends upon V+, inductor value and the PNP bipolar transistor . By adjusting the RBvalue


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PDF SC1650 L805-498-2111 SC1650
ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 MJH16008 mj16006 JH1600 JH-1600 mj16008 CUB 41 MJH1600S TRANSISTOR 2SC
Text: T0-ÎWA QOTUMSHMIAW 1 - 1 CASE 1-06 TO-204AA (TO-31 - I MJH1600S M JH ItO M W/"C °C , 3 | 7 " 3 M J1 6 0 0 6 , M J1 6 0 0 8 , M JH 16006, M JH 16008 3 - / 3 M J 16006 M JH16006 , | M J1 600 6, M J1 60 0 8 , M JH 160 0 6 , M JH 16008 T - 3 3 - / 3 M J16008 M , | M J1 60 0 6 , M J1 60 0 8 , M JH 16006, M JH 16008 T ' 3 3 ' ^ 3 T Y P IC A L S T A T IC C H A R , , M J1 6 0 0 8 , M JH 16006, M JH 16008 7 - 33 ~ /3 - `f l û l F IG U R E 1 4 - P E A K R E V


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PDF MJ16006 MJH16006 MJ16008 MJH16008 J16008 JH16008 JH16006 MJH16006 MJ16006 ms 7254 ver 1.1 ms 7254 ver 3.0 MJH16008 JH1600 JH-1600 CUB 41 MJH1600S TRANSISTOR 2SC
T01A transistor

Abstract: T01A RX1214B300Y SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y , L-band radar applications. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a , DESCRIPTION 1 collector 2 emitter 3 base connected to flange 3 jH Top view € Fig. 1 Simplified , Semiconductors Product specification NPN microwave power transistor RX1214B300Y LIMITING VALUES In accordance , transistor RX1214B300Y THERMAL CHARACTERISTICS Tj = 100 °C unless otherwise specified SYMBOL PARAMETER


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PDF RX1214B300Y OT439A OT439A. T01A transistor T01A RX1214B300Y SC15
Not Available

Abstract: No abstract text available
Text: transistor 2 M icro Linear ML4951 ABSOLUTE M A X IM U M RATINGS OPERATING C O N D IT IO N S , , the flip-flop captures the A1 set signal and creates a pulse at the gate of the NMOS transistor Q1. The NMOS transistor will charge the inductor L1 for 5|as, resulting in a peak current given by , one-shot times out, the NMOS transistor releases the V L pin, allowing the inductor to fly-back and momentarily charge the output through the body diode of PMOS transistor 02. But as the voltage across the


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PDF ML4951 ML4951 100kHz,
8115, transistor

Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Text: SEC k Silicon Transistor NPN=mi&MB>' 'J =7 >ì> 7. 5 NPN Silicon Triple Diffused Transistor , -5350 fil JH £ fi Ai >11(0166)25 -37 16 Â¥ Jff 3t fi Â¥ Rt(0552)24 -4141 m rt £ a 1iL o(0222)61 -55 , © * 3t IS 0263)35 -1666 it S £ $ IS if. ï<;03) 988 -20 11 JH 3E IS Jl|(0425)26 -09 11 ± S « * '§'(0486)43 -5380 S S fi -1(0472)27 -544 1 tt ■t ss m tâ (0471)64 -7011 « £ JH $ 4± ts ¡,4(045)662 -1621 JH « £ fi Jll iii5r(044)244 -580 1 1? ^(0462)24 -115 1 » H 3t fi ilf 151


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PDF pk092 8115, transistor 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Diode KD 514

Abstract: g4dh7 RH5RH301A RH5RH302B RH5RH303B RH5RH501A RH5RH502B RH5RH502B-T1 RH5RH503B
Text: oscillator, a PWM control circuit, a driver transistor (Lx switch), a reference voltage unit, an error , RH5RHXX1A IC and are provided with a drive pin (EXT) for an external transistor . Because of the use of the drive pin (EXT), an external transistor with a low saturation voltage can be used so that a large , charges energy in the inductor when Lx Transistor (LxTr) is on, and discharges the energy with the , Output Current louT(mA) L=120| jH \ 1.5V \ 2.0V Vin=1.0V 60 3.1 3.0 2.9


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PDF 15jiA-by 000406b Diode KD 514 g4dh7 RH5RH301A RH5RH302B RH5RH303B RH5RH501A RH5RH502B RH5RH502B-T1 RH5RH503B
1998 - BLW33

Abstract: BY206 application note blw33 BZY88 BZY88-C3V3 BZY88C-3V3 npn transistor dc 558 SOT122A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f , reliability properties. The transistor has a 1/4" capstan envelope with ceramic cap. QUICK REFERENCE , Philips Semiconductors Product specification UHF linear power transistor BLW33 RATINGS


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PDF BLW33 BLW33 BY206 application note blw33 BZY88 BZY88-C3V3 BZY88C-3V3 npn transistor dc 558 SOT122A
1998 - BY206

Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f , reliability properties. The transistor has a 1/4" capstan envelope with ceramic cap. QUICK REFERENCE , Philips Semiconductors Product specification UHF linear power transistor BLW32 RATINGS


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PDF BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
1998 - BLW98

Abstract: application note blw98 BY206 blw98 transistor BY206 Equivalent uhf linear amplifier linear handbook 3 pin trimmer capacitors transistor blw98 BD136
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in linear , sandwich metallization ensures excellent reliability. The transistor has a 1/4" capstan envelope with , Product specification UHF linear power transistor BLW98 RATINGS Limiting values in accordance


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PDF BLW98 BLW98 application note blw98 BY206 blw98 transistor BY206 Equivalent uhf linear amplifier linear handbook 3 pin trimmer capacitors transistor blw98 BD136
trw 131* RF POWER TRANSISTOR

Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA G414 driver circuit for MOSFET MAX626 siemens toroidal core
Text: external transistor circuits.) , 5 5V-0.5V _ lnrll L= 525mA <1^>=105,H A value of 120| jH would be a good , BOBBIN INDUCTORS Dale I HA-104 500fiH 0.512 Caddell-Burns 7070-29 220| jH , 0.55SÍ Gowanda 1B253 250fiH 0.4412 TRW LL-500 500| jH , 0.7512 POTTED TOROIDAL INDUCTORS Dale TE-3Q4TA 1 mH. 0.8212 TRW MH-1 600( jH 1.912 Gowanda 050AT1003 100| jH . 0.0512 FERRITE CORES AND TOROIDS (Note 4) Allen Bradley T0451S100A Tor Core 500nH/T2 Siemens B64290-K38-X38 Tor. Core, 4| jH /T2 Magnetics 555 130 Tor. Core 53nH/T2 Stackpole


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PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 10OpF trw 131* RF POWER TRANSISTOR MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA G414 driver circuit for MOSFET MAX626 siemens toroidal core
JH transistor

Abstract: MX0912B251Y Philips electrolytic screw SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y , TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A , base connected to flange 3 jH Top view € Fig. 1 Simplified outline and symbol. 1997 Feb 19 2 , NPN microwave power transistor MX0912B251Y LIMITING VALUES In accordance with the Absolute Maximum , transistor MX0912B251Y THERMAL CHARACTERISTICS Tj = 125 °C unless otherwise specified. SYMBOL PARAMETER


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PDF MX0912B251Y OT439A MBC881 OT439A. JH transistor MX0912B251Y Philips electrolytic screw SC15
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