The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN

JH transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor MJH 11020

Abstract: mjh11021 transistor MJH 11021 JH transistor
Text: Temperature Range Symbol VCEO VCB veb M JH 11017* M JH 11019* M JH 11021* M JH 11018* M JH 11020* M , oice s (or future use and best overall value. Motorola Bipolar Power Transistor Device Data 3-825 , Power Transistor Device Data MJH11017 M JH11019 M JH11021 M JH11018 M JH11020 MJH11022 0.02 0.03 , ) There are two limitations on the power handling ability of a transistor : average junction temperature and second break down. Safe operating area curves indicate lc - Vc e H TM *8 of the transistor that


OCR Scan
PDF MJH11020 MJH11022 MJH11017 JH11019 MJH11021 JH11018 JH11020 MJH11022 MJH11017 transistor MJH 11020 transistor MJH 11021 JH transistor
Not Available

Abstract: No abstract text available
Text: devices use a low-cost, external, N-channel MOSFET power switch or NPN transistor , and can be configured , t t = 10V L1 = 100| jH , Vo u t = 22.3V, T a = + 2 5 ‘C, unless otherwise noted.) k -F /O O R v s , Switching-Voltage Sense Input 15 15 DLO External Transistor Drive, Low 16 8 MAX1621 16 DHI External Transistor Drive, High Logic-Level Input. A rising edge on DN decreases | Vo u t I , external N-channel FET or NPN transistor to convert power from a 1.8V to 20V battery to a higher positive


OCR Scan
PDF MAX1620/MAX1621 MAX1620/ MAX1621
2N6678 motorola

Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Text: ) from seating plane for 10 s m ax Sym bol Vcev VCEX VcEO vebo 2 N 6676 M JH 6 6 7 6 450 350 300 2 N 6677 M JH 6 6 7 7 550 400 350 8 15 20 5 235 2 N 6678 M JH 6 6 7 8 650 450 400 Unit V dc V dc , 1 - 65 to + 200 125 - 65 to + 1 5 0 M JH 6 6 7 6 M JH 6 6 7 7 M JH 6 6 7 8 Unit °DW W atts wrc °C C A S E 340-01 T O -2 1 8 A C M JH 6676 M JH 6 6 7 7 M JH 6678 R e jc PT TJ ' T stg 3-250 , ) Collector-Em itter S u sta in in g V oltage d c = 15 A, V cE (p k) = V cia m p = Rated V CEX> 2N6676, M JH 6 6


OCR Scan
PDF T-33-13 2IM6648 2N6676 2N6677 2N6678 MJH6676 MJH6677 MJH6678 2N6676, 2N6677, 2N6678 motorola Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Not Available

Abstract: No abstract text available
Text: below 200m V Return for the NMOS output transistor GND SENSE vL RESET 4 DETECT 8 PWR , and creates a pulse at the gate o f the NMOS transistor Q 1 . The NMOS transistor w ill charge the , greater than 100| JH , the operation o f the synchronous rectifier becomes unreliable because the inductor , transistor releases the V l pin, allow ing the inductor to fly-back and m om entarily charge the output through the body diode o f PMOS transistor Q2. But as the voltage across the PMOS transistor changes


OCR Scan
PDF ML4950 L4950 100kHz, ML4950
Not Available

Abstract: No abstract text available
Text: interface. These devices use a low-cost, external, N-channel MOSFET power switch or NPN transistor , and , | jH , V q u t = 22.3V, Ta = +25°C, unless otherwise noted.) k-FACTORvs.VsATT \ 0 5 10 , DLO External Transistor Drive, Low 16 16 DHI External Transistor Drive, High , an external N-channel FET or NPN transistor to convert power from a 1,8V to 20V battery to a higher , transistor . The FET turns off {_CDON = float) if power-OK voltage (POK) falls below IV. In the MAXI 621


OCR Scan
PDF MAX1620/ MAXI620 MAX1621
18ph

Abstract: Transistor 596 SJ
Text: 200mV Return for the N M O S output transistor DETECT 8 PW R GND 2 Micro Linear , a pulse at the gate of the N M O S transistor Q 1 . The NMOS transistor will charge the inductor LI , . When the one-shot times out, the N M OS transistor releases the V l pin, allowing the inductor to fly-back and momentarily charge the output through the body diode of PMOS transistor Q2. But as the voltage across the PM O S transistor changes polarity, its gate will be driven low by the current sense amplifier


OCR Scan
PDF ML4951 ML4951 100kHz, 18ph Transistor 596 SJ
15P D-SUB analog RGB

Abstract: TRANSISTOR c 5578 B AU Optronics TFT HATTELAND JH transistor VSD100692-4 EN60945 en 60945 capacitive touch screen 1680x1050
Text: (MMD) Type: JH 22T11 MMD-xxx-Axxx Last Revised: Revision#: 27 May 2011 19 22.0 inch , PRODUCT SPECIFICATIONS - JH 22T11 MMD-xxx-Axxx Note: All specifications are subject to change without , Film Transistor (TFT) RGB Vertical Stripe TFT Characteristics: · · · · · · · · Native , 24 VDC - JH 22T11 MMD-Axx-xxxx - JH 22T11 MMD-Dxx-xxxx Power Consumption: Operating - 85W (TYP) - 100W (MAX) Typical Type Numbers: · JH 22T11 MMD-AA1-AAAA · JH 22T11 MMD-AA1-AOAC · JH


Original
PDF 22T11 22TSV com/pdflink/ind100780-1 15P D-SUB analog RGB TRANSISTOR c 5578 B AU Optronics TFT HATTELAND JH transistor VSD100692-4 EN60945 en 60945 capacitive touch screen 1680x1050
D-SUB FOR VGA Amphenol

Abstract: 15P D-SUB analog RGB from DVI input to RGB output VGA iec 60945 HATTELAND TRANSISTOR c 5578 B VSD100692-3 EN60945 vga cutout dimensions VSD100692-4
Text: (MMD) Type: JH 26T11 MMD-xxx-Axxx Last Revised: Revision#: 27 May 2011 13 26.0 inch , mail@hatteland-display.com - www.hatteland-display.com 1/2 PRODUCT SPECIFICATIONS - JH 26T11 MMD-xxx-Axxx Note: All , , Active Matrix, Thin Film Transistor (TFT) RGB Vertical Stripe Native Resolution Pixel Pitch (RGB , 115&230VAC - 50/60Hz · 115&230VAC - 50/60Hz + 24 VDC - JH 26T11 MMD-Axx-xxxx - JH 26T11 MMD-Mxx-xxxx* Power Consumption: Operating : TBD (TYP) - 185W (MAX) Typical Type Numbers: · JH 26T11


Original
PDF 26T11 26BRD EN6095 26TBR 26TSV 26VED 26TWC D-SUB FOR VGA Amphenol 15P D-SUB analog RGB from DVI input to RGB output VGA iec 60945 HATTELAND TRANSISTOR c 5578 B VSD100692-3 EN60945 vga cutout dimensions VSD100692-4
MS 1117 ADC

Abstract: MJ12004 MJH12004 mjh12
Text: HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTORS 1600 VOLTS 100 WATTS . . . specifically , a rra ts tm HU 3U 7 21« V6 IB O il 1« in 140 tUSSSC I3B 8S C S«R C it a BSC tm 1Î.IJ 4.1$ JH H !J to , m M SI ave io sa 9190 am m ss - CASE 1-06 TO-204AA (TO-3) M JH 12004 W/°C °C T st9 , into account. If the base of the output transistor is driven by a very low impedance source, the , the transistor is still conductive. This is a high dissipa tion mode,since the collector voltage is


OCR Scan
PDF MJ12004 MJH12004 J12004 MS 1117 ADC MJH12004 mjh12
L4850

Abstract: No abstract text available
Text: , or when DETECT goes below V ref Return for the NMOS output transistor VL RESET GND DETECT 8 , captures the A1 set signal and creates a pulse at the gate o f the NMOS transistor Q 1 . The NMOS transistor w ill charge the inductor LI for 5|Js, resulting in a peak current given by: _ tp N x M L( PEAK , the one-shot times out, the NMOS transistor releases the V l pin, allow ing the inductor to fly-back and m om entarily charge the output through the body diode o f PMOS transistor Q2. But as the voltage


OCR Scan
PDF ML4850 L4850 100kHz,
30L SOT-23

Abstract: 2SD1628G MA721 RB111C RN5RK301A RN5RK301B
Text: driver transistor to have low ON resistance (Lx switch), a reference voltage unit, a high speed , chip as what is employed in the RN5RKXX1A/ IB IC and has a drive pin (EXT) for an external transistor instead of an Lx pin. As it is po ssible to load a large output current with a power transistor which has , Driver Transistor with Low ON Resistance • Two Kinds of Duty Ratio , (SBD) Capacitor (Cl) Transistor (Tr) Base Resistor (Rb) Base Capacitor ( Cb) 27pH (SumidaElectric Co


OCR Scan
PDF RN5RK302A OT-23-5 30L SOT-23 2SD1628G MA721 RB111C RN5RK301A RN5RK301B
BLV30

Abstract: DB2-24 sot122
Text: PHILIPS INTERNATIONAL bSE D m 711GÖ5b OOt.2054 521 BLV30 _A_ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for , transistor has a Ve." capstan envelope with ceramic cap. All leads are isolated from the stud. QUICK , Material Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL V.H.F. linear power transistor 8 Rth j-h (K/W) b5E D B 711üö£hi DOLSÖSb 3T4 BLV30 IPHIN J Tu = 120 °C 100 °C


OCR Scan
PDF BLV30 BLV30 DB2-24 sot122
Not Available

Abstract: No abstract text available
Text: PNP bipolar transistor drivers. The 4V to 24V input operation range allows the SC1650 to be powered , mode (8|iA typical) High efficiency with low cost external PNP bipolar transistor APPLICATIONS â , V + — I - 1 r~ - — VOUT= -30V I OUT= -10mA L=300( jH 4^+ L=220( jH L=150( jH lu , external PNP bipolar transistor , connect a resistor RB from this pin to DHI. RB value depends upon V+, inductor value and the PNP bipolar transistor . By adjusting the RBvalue, efficiency can be optimized


OCR Scan
PDF SC1650 L805-498-2111 SC1650
Not Available

Abstract: No abstract text available
Text: of Power Transistor . For stepdown configuration, connect to Vjn. For step-up configuration, connect to an inductor/diode. Emitter Node of Power Transistor . For stepdown configuration, connect to , transistor are accessible on the ADP1111, the output voltage can be higher, lower, or of opposite polarity , | jH to 100 | jH with a saturation current rating of 300 mA to 1 A and dc resistance <0.4 £2 is , AO output is an open collector N PN transistor that can sink 300 |jA. CALCULATING THE INDUCTOR


OCR Scan
PDF ADP1111
Not Available

Abstract: No abstract text available
Text: PNP bipolar transistor drivers. The 4V to 24V input operation range allows the SC1650 to be powered , efficiency with low cost external PNP bipolar transistor APPLICATIONS · Negative LCD contrast bias for 1 , =300( jH L=220( jH 4^+ L=150( jH lu 85 80 4 6 8 10 12 14 16 18 20 22 24 V +(V) V +(V) V , MOSFET. When using an external PNP bipolar transistor , connect a resistor RBfrom this pin to DHI. RB value depends upon V+, inductor value and the PNP bipolar transistor . By adjusting the RBvalue


OCR Scan
PDF SC1650 L805-498-2111 SC1650
ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 MJH16008 mj16006 JH1600 JH-1600 mj16008 CUB 41 MJH1600S TRANSISTOR 2SC
Text: T0-ÎWA QOTUMSHMIAW 1 - 1 CASE 1-06 TO-204AA (TO-31 - I MJH1600S M JH ItO M W/"C °C , 3 | 7 " 3 M J1 6 0 0 6 , M J1 6 0 0 8 , M JH 16006, M JH 16008 3 - / 3 M J 16006 M JH16006 , | M J1 600 6, M J1 60 0 8 , M JH 160 0 6 , M JH 16008 T - 3 3 - / 3 M J16008 M , | M J1 60 0 6 , M J1 60 0 8 , M JH 16006, M JH 16008 T ' 3 3 ' ^ 3 T Y P IC A L S T A T IC C H A R , , M J1 6 0 0 8 , M JH 16006, M JH 16008 7 - 33 ~ /3 - `f l û l F IG U R E 1 4 - P E A K R E V


OCR Scan
PDF MJ16006 MJH16006 MJ16008 MJH16008 J16008 JH16008 JH16006 MJH16006 MJ16006 ms 7254 ver 1.1 ms 7254 ver 3.0 MJH16008 JH1600 JH-1600 CUB 41 MJH1600S TRANSISTOR 2SC
T01A transistor

Abstract: T01A RX1214B300Y SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y , L-band radar applications. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a , DESCRIPTION 1 collector 2 emitter 3 base connected to flange 3 jH Top view € Fig. 1 Simplified , Semiconductors Product specification NPN microwave power transistor RX1214B300Y LIMITING VALUES In accordance , transistor RX1214B300Y THERMAL CHARACTERISTICS Tj = 100 °C unless otherwise specified SYMBOL PARAMETER


OCR Scan
PDF RX1214B300Y OT439A OT439A. T01A transistor T01A RX1214B300Y SC15
Not Available

Abstract: No abstract text available
Text: transistor 2 M icro Linear ML4951 ABSOLUTE M A X IM U M RATINGS OPERATING C O N D IT IO N S , , the flip-flop captures the A1 set signal and creates a pulse at the gate of the NMOS transistor Q1. The NMOS transistor will charge the inductor L1 for 5|as, resulting in a peak current given by , one-shot times out, the NMOS transistor releases the V L pin, allowing the inductor to fly-back and momentarily charge the output through the body diode of PMOS transistor 02. But as the voltage across the


OCR Scan
PDF ML4951 ML4951 100kHz,
8115, transistor

Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Text: SEC k Silicon Transistor NPN=mi&MB>' 'J =7 >ì> 7. 5 NPN Silicon Triple Diffused Transistor , -5350 fil JH £ fi Ai >11(0166)25 -37 16 Â¥ Jff 3t fi Â¥ Rt(0552)24 -4141 m rt £ a 1iL o(0222)61 -55 , © * 3t IS 0263)35 -1666 it S £ $ IS if. ï<;03) 988 -20 11 JH 3E IS Jl|(0425)26 -09 11 ± S « * '§'(0486)43 -5380 S S fi -1(0472)27 -544 1 tt ■t ss m tâ (0471)64 -7011 « £ JH $ 4± ts ¡,4(045)662 -1621 JH « £ fi Jll iii5r(044)244 -580 1 1? ^(0462)24 -115 1 » H 3t fi ilf 151


OCR Scan
PDF pk092 8115, transistor 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Diode KD 514

Abstract: g4dh7 RH5RH301A RH5RH302B RH5RH303B RH5RH501A RH5RH502B RH5RH502B-T1 RH5RH503B
Text: oscillator, a PWM control circuit, a driver transistor (Lx switch), a reference voltage unit, an error , RH5RHXX1A IC and are provided with a drive pin (EXT) for an external transistor . Because of the use of the drive pin (EXT), an external transistor with a low saturation voltage can be used so that a large , charges energy in the inductor when Lx Transistor (LxTr) is on, and discharges the energy with the , Output Current louT(mA) L=120| jH \ 1.5V \ 2.0V Vin=1.0V 60 3.1 3.0 2.9


OCR Scan
PDF 15jiA-by 000406b Diode KD 514 g4dh7 RH5RH301A RH5RH302B RH5RH303B RH5RH501A RH5RH502B RH5RH502B-T1 RH5RH503B
1998 - BLW33

Abstract: BY206 application note blw33 BZY88 BZY88-C3V3 BZY88C-3V3 npn transistor dc 558 SOT122A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f , reliability properties. The transistor has a 1/4" capstan envelope with ceramic cap. QUICK REFERENCE , Philips Semiconductors Product specification UHF linear power transistor BLW33 RATINGS


Original
PDF BLW33 BLW33 BY206 application note blw33 BZY88 BZY88-C3V3 BZY88C-3V3 npn transistor dc 558 SOT122A
1998 - BY206

Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f , reliability properties. The transistor has a 1/4" capstan envelope with ceramic cap. QUICK REFERENCE , Philips Semiconductors Product specification UHF linear power transistor BLW32 RATINGS


Original
PDF BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
1998 - BLW98

Abstract: application note blw98 BY206 blw98 transistor BY206 Equivalent uhf linear amplifier linear handbook 3 pin trimmer capacitors transistor blw98 BD136
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in linear , sandwich metallization ensures excellent reliability. The transistor has a 1/4" capstan envelope with , Product specification UHF linear power transistor BLW98 RATINGS Limiting values in accordance


Original
PDF BLW98 BLW98 application note blw98 BY206 blw98 transistor BY206 Equivalent uhf linear amplifier linear handbook 3 pin trimmer capacitors transistor blw98 BD136
trw 131* RF POWER TRANSISTOR

Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA G414 driver circuit for MOSFET MAX626 siemens toroidal core
Text: external transistor circuits.) , 5 5V-0.5V _ lnrll L= 525mA <1^>=105,H A value of 120| jH would be a good , BOBBIN INDUCTORS Dale I HA-104 500fiH 0.512 Caddell-Burns 7070-29 220| jH , 0.55SÍ Gowanda 1B253 250fiH 0.4412 TRW LL-500 500| jH , 0.7512 POTTED TOROIDAL INDUCTORS Dale TE-3Q4TA 1 mH. 0.8212 TRW MH-1 600( jH 1.912 Gowanda 050AT1003 100| jH . 0.0512 FERRITE CORES AND TOROIDS (Note 4) Allen Bradley T0451S100A Tor Core 500nH/T2 Siemens B64290-K38-X38 Tor. Core, 4| jH /T2 Magnetics 555 130 Tor. Core 53nH/T2 Stackpole


OCR Scan
PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 10OpF trw 131* RF POWER TRANSISTOR MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA G414 driver circuit for MOSFET MAX626 siemens toroidal core
JH transistor

Abstract: MX0912B251Y Philips electrolytic screw SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y , TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A , base connected to flange 3 jH Top view € Fig. 1 Simplified outline and symbol. 1997 Feb 19 2 , NPN microwave power transistor MX0912B251Y LIMITING VALUES In accordance with the Absolute Maximum , transistor MX0912B251Y THERMAL CHARACTERISTICS Tj = 125 °C unless otherwise specified. SYMBOL PARAMETER


OCR Scan
PDF MX0912B251Y OT439A MBC881 OT439A. JH transistor MX0912B251Y Philips electrolytic screw SC15
Supplyframe Tracking Pixel