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Part Manufacturer Description Datasheet Download Buy Part
LT1056S8#TR Linear Technology LT1056 - Precision, High Speed, JFET Input Operational Amplifiers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1057IS8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#PBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792ACN8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1792IS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1793CS8#TRPBF Linear Technology LT1793 - Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

JFETs Junction FETs Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - p channel depletion mosfet

Abstract:
Text: devices (Figure 1) may be divided into two main branches, Junction FETs ( JFETs ) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently , . Junction FETs In its most elementary form, this transistor consists of a piece of high-resistivity , twice as efficient conductors compared to their p-channel counterparts. FETs Junction , current saturation region. JFETs operating in the current satura- In summary, a junction FET consists


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PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
P-Channel Depletion Mode FET

Abstract:
Text: AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two main branches, Junction FETs ( JFETs ) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , twice as efficient conductors compared to their p-channel counterparts. FETs Junction


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PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
P-Channel Depletion Mode FET

Abstract:
Text: covers the full range of FET applications. Included here is a wide variety of junction FETs , MOSFETs (with P- or N-channel polarity with both single and dual gates) and TMOS FETs . These FETs include , on many typical FETs . N-CHANNEL P-Channel JFETs V(BR)GSS Clss 'on 'off rds(on) vGS , applications. Package options JFETs from low cost plastic to metal TO-72 packages are available. The selector , consideration for new equipment design. JFETs ° P-CHANNEL TABLE 1. Switches and Choppers JFETs operate in


OCR Scan
PDF MPF971 N3993 N3994 2N4859A 2N4856A 2N4856 N4859 2N4391 MPF4391 2N4091 P-Channel Depletion Mode FET P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091
1995 - P-Channel Depletion Mode FET

Abstract:
Text: (Figure 1) may be divided into two main branches, Junction FETs ( JFETs ) and Insulated Gate FETs (or MOSFETs, metaloxide semiconductor fieldeffect transistors). Junction FETs are inherently depletionmode , depend on different phenomena for their operation, and will be discussed separately. Junction FETs , twice as efficient conductors compared to their pchannel counterparts. FETs Junction Enhancement , AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldeffect


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
1999 - P-Channel Depletion Mosfets

Abstract:
Text: AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two main branches, Junction FETs ( JFETs ) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , twice as efficient conductors compared to their p-channel counterparts. FETs Junction


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1996 - fet vcr compatible

Abstract:
Text: AN105 FETs As VoltageControlled Resistors Introduction: The Nature of VCRs A voltagecontrolled , of the terminals is controlled by a voltage potential applied to the third. For a junction , nchannel JFETs and positively for pchannel), the resistance will also increase. When the drain current is , ) VDS = VGS - VGS(off) Region 1 Resistance Properties of FETs The unique resistancecontrolling properties of FETs can be deduced from Figure 2, which is an expandedscale plot of the encircled area in


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PDF AN105 11-Jul-94 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR VOLTAGE DEPENDENT RESISTOR details Siliconix JFET application note Siliconix "fet" PN4119A J111 AN105 2N5486 vcr
siliconix fet

Abstract:
Text: active area — the complete line of Siliconix junction FETs . To give you an idea how this guide works , and P-Channel Single JFETs .2-6 N-Channel Dual JFETs .2-12 Low Leakage Diodes , .2-15 VMOS Power FETs .2-16 Die Process , Reference and Index APPLICATION NOTES_Index AN73-7 An Introduction to FETs


OCR Scan
PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
BC547 sot package sot-23

Abstract:
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola , plastic and metal­can semiconductors. A large selection of encapsulated plastic transistors, FETs and , . . . . . . . . . . . . . 5.1­20 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , 5.1­22 Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . 5.1­23 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . 5.1­25 Tuning Diodes - Abrupt Junction . . . . . . . . . .


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PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f MBF4416DW1T1 2N2222A plastic package
Siliconix J310

Abstract:
Text: as a switch. b. SPICE identifies depletion-mode FETs (all JFETs , regardless of polarity) by a , AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the , ( JFETs included) are valid only for that manufacturer. Because of the vagaries in design, the product of , represents typical models of Siliconix FETs . However, we make no warranty, implied, expressed or otherwise


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PDF AN104 2N5116 10-Mar-97 Siliconix J310 GASFET 2N4339 Spice J111 spice model jfet spice model Siliconix AN104 U310 spice model Siliconix JFET an104 siliconix AN104
1995 - an104 siliconix

Abstract:
Text: only important when modeling the JFET as a switch. b. SPICE identifies depletionmode FETs (all JFETs , AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE , for any semiconductor ( JFETs included) are valid only for that manufacturer. Because of the vagaries , excellent precision. The following represents typical models of Siliconix FETs . However, we make no


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PDF AN104 2N5116 SST176 an104 siliconix TO-226A U421 jfet Siliconix AN104 jfet spice model SILICONIX 2N4391 SST310 spice model J111 Ed Oxner 2N4416
1996 - BC337 BC547

Abstract:
Text: Transistors, FETs and Diodes 5.1­18 Motorola Master Selection Guide Field­Effect Transistors JFETs , , FETs and Diodes JFETs (continued) Table 32. JFET Switches and Choppers The following is a , 3 SOT­223 Table 34. Surface Mount RF JFETs The following is a list of surface mount FETs which , General­Purpose JFETs The following table is a listing of surface mount small­signal general purpose FETs . These , Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola


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PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 MVAM115 zt751 transistor 2N4125 automatic stabilizer circuit diagram range 210 to 250 volts marking 6AA SOD MBT3904DW9 MMBF5486LT1
1999 - application note jfet J111 transistor

Abstract:
Text: AN105 FETs As VoltageControlled Resistors Introduction: The Nature of VCRs A , between two of the terminals is controlled by a voltage potential applied to the third. For a junction , n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current , nchannel JFET. Most amplification or switching operations of FETs occur in the constant-current (saturated , . Resistance Properties of FETs The unique resistance-controlling properties of FETs can be deduced from


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PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 application note jfet J111 transistor datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr Siliconix N-Channel JFETs N CHANNEL jfet VCR7N Siliconix N-Channel JFET
1995 - fet vcr compatible

Abstract:
Text: AN105 Siliconix FETs As VoltageControlled Resistors A voltagecontrolled resistor (VCR) may , terminals is controlled by a voltage potential applied to the third. For a junction fieldeffect transistor , to zero volts (VGS = 0). If the gate voltage is increased (negatively for nchannel JFETs and , nchannel JFET. Most amplification or switching operations of FETs occur in the constantcurrent (saturated , . Resistance Properties of FETs The unique resistancecontrolling properties of FETs can be deduced from


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PDF AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible 2N5486 SST4119 SST111 PN4119A jfet J111 transistor jfet idss 10 ma vp -3 J111 application note jfet J111 transistor AN105
1999 - N CHANNEL jfet Low Noise Audio Amplifier

Abstract:
Text: AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field , frequency performance of JFETs versus bipolars. ­ Curves comparing noise current and voltage. ­ , low-noise JFETs , it increases approximately 3 dB per octave in bipolars starting below 100 Hz. Thermal , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction , channel junction . It is defined as 4kTB Rp (4) where Rp is the real part of the


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PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix AN106 Siliconix JFET Dual 2N4338 2n930 equivalent transistor equivalent table chart JFETs Junction FETs ic for hearing aid
1995 - transistor 2n5088 equivalent

Abstract:
Text: AN106 Siliconix LowNoise JFETs Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowfrequency , types are described in Table 1. Comparative low frequency performance of JFETs versus bipolars , frequency and is usually referred to as 1/f" noise. Negligible in lownoise JFETs , it increases approximately , corner frequency is normally above 10 kHz in JFET devices. Figure 2. Characteristics of Junction FET


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PDF AN106 transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs Siliconix "low noise jfet" siliconix fet transistor j201
2000 - MPF102 equivalent transistor

Abstract:
Text: : In junction FETs , the maximum voltage that may be applied between any two terminals is the lowest , . Some reflection will reveal that for junction FETs , the V (BR)DGO specification really provides the , JFETs 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 For tetrode-connected FETs , three yfs , INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and , voltage produces only a slight increase in drain current. JUNCTION FIELD-EFFECT TRANSISTOR (JFET) In


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PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A mpf102 fet 2N3797 2N3797 equivalent 2N4351 MPF102 Transistor P-Channel Depletion Mode FET mpf102 application note
fet vcr compatible

Abstract:
Text: AN105 FETs As VoltageControlled Resistors Introduction: The Nature of VCRs A voltage-controlled , two of the terminals is controlled by a voltage potential applied to the third. For a junction , n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current , n-channel JFET. Most amplification or switching operations of FETs occur in the constant-current (saturated , . Resistance Properties of FETs The unique resistance-controlling properties of FETs can be deduced from


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PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs PN4119A application note N-Channel JFET FETs Siliconix JFET application note geometry J111 transistor jfet
1993 - 2N3797

Abstract:
Text: interpret the intent of each specification and rating. For example: In junction FETs , the maximum voltage , reflection will reveal that for junction FETs , the V (BR)DGO specification really provides the same , a higher series resistance (rds(on) than the junction transistor. As newer and better FETs are , JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) RF Application Reports © Motorola, Inc , ÈÇÇ ÇÇÇÈ ÇÇÇÈ ÈÇÇ ÇÇÇÈ ÈÇÇ In its simplest form the junction field-effect transistor starts


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PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor mpf102 fet MPF102 JFET 2N4221 motorola MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
MMBF4856

Abstract:
Text: Small Signal Transistors, FETs and Diodes JFETs (continued) Table 32. JFET Switches and Choppers , Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola , plastic and metal­can semiconductors. A large selection of encapsulated plastic transistors, FETs and , 5.1­17 Field­Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1­19 JFETs . . . . . , . . . . . . . . . . . . . . . . . . . . . . . 5.1­21 Surface Mount FETs . . . . . . . . . . . . . .


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PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 motorola surface mount marking code data book BS107 MOTOROLA
1993 - AN211A

Abstract:
Text: interpret the intent of each specification and rating. For example: In junction FETs , the maximum voltage , reflection will reveal that for junction FETs , the V (BR)DGO specification really provides the same , a higher series resistance (rds(on) than the junction transistor. As newer and better FETs are , JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) P P SOURCE N DRAIN N , of Junction Field-Effect Transistors VP LOCUS VGS = 0 ID ID VGS = 0 VGS = ­ 1 V IP


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PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 mpf102 fet 2N3797 equivalent mpf102 equivalent P channel 2N4221 motorola
1996 - N CHANNEL jfet Low Noise Audio Amplifier

Abstract:
Text: AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field , frequency performance of JFETs versus bipolars. ­ Curves comparing noise current and voltage. ­ , . Negligible in low-noise JFETs , it increases approximately 3 dB per octave in bipolars starting below 100 Hz , devices. Figure 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction FET en and in characteristics are frequency- dependent within the audio noise spectrum


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PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier transistor fn 1016 siliconix fet JFET APPLICATIONS jfets JFETs Junction FETs Siliconix AN106 2n5088 transistor 2N5088 equivalent 4KTR
1996 - HC-49/pspice model

Abstract:
Text: as a switch. b. SPICE identifies depletion-mode FETs (all JFETs , regardless of polarity) by a , AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the , ( JFETs included) are valid only for that manufacturer. Because of the vagaries in design, the product of , represents typical models of Siliconix FETs . However, we make no warranty, implied, expressed or otherwise


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PDF AN104 SST176 2N5116 01-Sep HC-49/pspice model J111 spice model U310 spice model jfet spice model GASFET 2n4391 spice 2n4416 J176 SST310 spice model U310
2N5088 equivalent

Abstract:
Text: AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field , frequency performance of JFETs versus bipolars. ­ Curves comparing noise current and voltage. ­ , low-noise JFETs , it increases approximately 3 dB per octave in bipolars starting below 100 Hz. Thermal , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction , channel junction . It is defined as 4kTB Rp (4) where Rp is the real part of the


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PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet transistor 2n5088 equivalent siliconix FET DESIGN Siliconix AN106 transistor FN 1016 Siliconix "low noise jfet" 2n930 equivalent
1993 - MPF102 JFET

Abstract:
Text: . For example: In junction FETs , the maximum voltage that may be applied between any two terminals is , of avalanche. AN211A Some reflection will reveal that for junction FETs , the V (BR)DGO , NCHANNEL JFET GATE SOURCE PCHANNEL JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) In its simplest form the junction field-effect transistor starts with nothing more than a bar of doped silicon , called gate regions. As with any p-n junction , a depletion region surrounds the p-n junctions when the


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PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 2N4221 MOTOROLA POWER TRANSISTOR MPF102 Transistor 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
1999 - J111 spice model

Abstract:
Text: as a switch. b. SPICE identifies depletion-mode FETs (all JFETs , regardless of polarity) by a , AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the , ( JFETs included) are valid only for that manufacturer. Because of the vagaries in design, the product of , represents typical models of Siliconix FETs . However, we make no warranty, implied, expressed or otherwise


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PDF AN104 2N5116 10-Mar-97 J111 spice model Siliconix AN104 U310 2n4416 jfet datasheet jfet J111 transistor GASFET PSpice Siliconix J310 application note jfet J111 transistor 2N4416 Siliconix
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