The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1056S8#TR Linear Technology LT1056 - Precision, High Speed, JFET Input Operational Amplifiers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1057IS8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#PBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792ACN8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1792IS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1793CS8#TRPBF Linear Technology LT1793 - Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

JFET BFW10 SPECIFICATIONS Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BFW10 JFET

Abstract: bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit SYMBOL BFW10 BFW11 MOTOROLA
Text: 4 Case JFET VHF/UHF AMPLIFIER N-CHANNEL - DEPLETION Refer to 2N4416 for graphs. ELECTRICAL , BFW10 (VqS = 15 Vdc, Id = 0.5 nAdc) BFW11 VGS(off) — — CO CO Vdc Gate Reverse Current (VGS = 20 Vdc, Vds = 0) IGSS — — 0.1 nAdc Gate-Source Voltage (VDS = 15 Vdc, Id = 400 jiAdc) BFW10 VGS 2 — 7.5 , Zero-Gate Voltage Drain Current BFW10 (Vds = 15 Vdc, VGS = o) BFW11 loss 8 4 — 20 10 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transadmittance BFW10 (Vds = 15 Vdc, VGS = o, f = 1 kHz) BFW11 Yfs 3.5 3.0 — 6.5


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PDF BFW11 2N4416 16enameled BFW10 JFET bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit SYMBOL BFW10 BFW11 MOTOROLA
BFW10 JFET

Abstract: BFW10 bfw11 jfet bfw11 jfet bfw10 bfw10 equivalent BFW11 circuit SYMBOL BFW10 EQUIVALENT OF bfw10 BFW11 MOTOROLA
Text: bfw10 bfw11 CASE 20-03, STYLE 1 TO-72 (TO-206A) MAXIMUM RATINGS Rating Symbol Value Unit , CHARACTERISTICS (Ta = 25°C unless otherwise rioted.) 2 Dra! 4 Case JFET VHF/UHF AMPLIFIER N-CHANNEL - , Cutoff Voltage BFW10 (Vqs = 15 Vdc. Id = 0.5 nAdc) BFW11 VGS(off) — — 00 CO Vdc Gate Reverse Current (VGS = 20 Vdc, VDS = 0) IGSS — — 0.1 nAdc Gate-Source Voltage (VDS = 15 Vdc, Id = 400 ^Adc) BFW10 , CHARACTERISTICS Zero-Gate Voltage Drain Current BFW10 (VDS = 15 Vdc, Vqs = 0) BFW11 'DSS CO — 20 10 mAdc


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PDF bfw10 bfw11 O-206A) 2N4416 BFW10 JFET bfw11 jfet bfw11 jfet bfw10 bfw10 equivalent BFW11 circuit SYMBOL BFW10 EQUIVALENT OF bfw10 BFW11 MOTOROLA
E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: =25µV typ) · High Gain (Yfs=30,000µS min) Photo FET · Light Sensitive N-Channel JFET · Second Source , Required · Second Source for Siliconix Voltage Controlled Resistor: · Monolithic Dual N-Channel JFET , L8 L9 Single JFET Packages F1 F2 , K4 Dual JFET Packages A3 D6 , BFS68P BFS70 BFS71 BFS72 BFS73 BFS74 BFS75 BFS76 BFS77 BFS78 BFS79 BFS80 BFT46 BFW10 BFW11


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PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: the right to make changes in the circuitry or specifications in this book at any time without notice , .2-1 How to Choose the Correct FET for your JFET Geometry Selector Useful JFET Parameter , .2-4 Product Specifications N , Industry Part Number Typ« and Claaalflcatlon Recommended Replacement Qaometry i Page 1N5283 CL N JFET


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PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
1996 - ACH-04-08-05

Abstract: piezoelectric cantilever 2n4117 equivalent piezoelectric contact accelerometer sensor 2N4117 aCCELEROMETER APPLICATION CIRCUIT ACCELEROMETER sensing systems and CIRCUIT basic MSI IC application LT73 DSA00474518.txt
Text: . @ Specifications modified from standard 2N4117 JFET 's. FS Rev A Measurement Specialties , simultaneously measure acceleration in three orthogonal, linear axes. Internal JFET 's provide for a low , Specifications subject to change. Consult MSI for latest specifications . PN: 1003800-5 LOC ER Accelerometer , Y-Axis JFET Drain or Source 2 D/S2-Y Y-Axis JFET Source or Drain 3 CTG Connect to GND 4 SGND Sensor Common 5 D/S1-X X-Axis JFET Drain or Source 6 D/S2-X X-Axis


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PDF ACH-04-08-05 ACH-04-08-05. ACH-04-08-05 ACH-0408-05 piezoelectric cantilever 2n4117 equivalent piezoelectric contact accelerometer sensor 2N4117 aCCELEROMETER APPLICATION CIRCUIT ACCELEROMETER sensing systems and CIRCUIT basic MSI IC application LT73 DSA00474518.txt
jfet

Abstract: 2N4303 2N4381 Siliconix JFET Dual 2N4302 n channel 2n4393 to92 jfet p channel 2N3994 2n4267 dual P-Channel JFET
Text: 0> E! O s Product Specifications (Cont'd) Low Leakage Diodes Part Number Package (TO , Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N JFET 2N4391 2N3955 D N JFET 2N3955 2N4392 N JFET 2N4392 2N3955A D N JFET 2N3955A 2N4393 N JFET 2N4393


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PDF DPAD10 DPAD20 DPAD50 DPAD100 JPAD10 JPAD20 JPAD50 JPAD100 JPAD200 JPAD500 jfet 2N4303 2N4381 Siliconix JFET Dual 2N4302 n channel 2n4393 to92 jfet p channel 2N3994 2n4267 dual P-Channel JFET
Lovoltech

Abstract: POWERJFET LS1105 jfet transistor jfet application LVT103 lovoltech no diode LVTS1101S LVTS101N JFET APPLICATIONS
Text: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET , Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device that presents a , S Top View N ­ Channel Power JFET Pin Definitions Pin Number 4 1, 2, 3 5, 6, 7, 8 , Units °C/W °C/W Electrical Specifications (TA = +25°C, unless otherwise noted.) The denotes specifications which apply over the full operating temperature range. Symbol Parameter Conditions Static


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PDF PWRLITE-LS1105N LS1105N Lovoltech POWERJFET LS1105 jfet transistor jfet application LVT103 lovoltech no diode LVTS1101S LVTS101N JFET APPLICATIONS
1997 - P-Channel Depletion Mode FET

Abstract: J201 N-channel JFET to 90 TRANSISTOR 2n3955 2n3955 transistor spice jfet n channel ultra low noise low noise dual P-Channel JFET dual P-Channel JFET monolithic dual jfet transistor super beta transistor 2N44
Text: sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended , 2N5114 2N5115 Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier Ultra High Input Impedance N-Channel JFET Amplifier Ultra High Input


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PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET J201 N-channel JFET to 90 TRANSISTOR 2n3955 2n3955 transistor spice jfet n channel ultra low noise low noise dual P-Channel JFET dual P-Channel JFET monolithic dual jfet transistor super beta transistor 2N44
2011 - ASJD1200R085

Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
Text: specifications without notice. 5 ADVANCE INFORMATION SiC JFET ASJD1200R085 MECHANICAL DRAWING , ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET , www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCE INFORMATION SiC JFET ASJD1200R085 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , Components reserves the right to change products or specifications without notice. 2 ADVANCE


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PDF ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
2011 - ASJE1700R550

Abstract: SiC JFET 3E05 JFET semisouth SEMISOUTH silicon carbide j-fet SJEP170 silicon carbide JFET SJEP170R550 SJEP
Text: the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET , products or specifications without notice. 4 ADVANCE INFORMATION SiC JFET ASJE1700R550 Figure 13 , or specifications without notice. 5 ADVANCE INFORMATION SiC JFET ASJE1700R550 MECHANICAL , the right to change products or specifications without notice. 6 ADVANCE INFORMATION SiC JFET , ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET


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PDF ASJE1700R550 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 O-257 SiC JFET 3E05 JFET semisouth SEMISOUTH silicon carbide j-fet SJEP170 silicon carbide JFET SJEP
2001 - Power MOSFET Switching Waveforms A New Insight

Abstract: jfet cascode IRF130 AN-7506 vertical JFET intersil jfet mosfet SPICE MODEL
Text: a power MOSFET's internal capacitances change with bias conditions, the presence of a cascode JFET , JFET , driven in cascode from a low-voltage lateral MOSFET.1, 2 When the gate is positively biased , acts as the drain of the lateral MOSFET, as well as the source of the vertical JFET . The JFET channel is thenregion between the two p-type body diffusions, which act as the gate of the JFET . The JFET , 2 GATE OXIDE +n SOURCE p+ MOS p BODY JFET 0V 10V DEPLETION 40V LAYER n


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e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
Text: changes in the circuitry or specifications at any time without notice and assumes no responsibility for , Section 4. Geometry Useful JFET Parameter Relationships.4-1 DMCA , . 5-3 Application Parameter Importance Guide .5-4 JFET Geometry Selector Guide .5-7 Product Specifications .5-10 Section 6. Package Data TO , -99 . 6-2 TO-92 Taping Specifications .6-3 SOT


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PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
2002 - jfet cascode

Abstract: mosfet equivalent cascode mosfet switching UHC MOS vertical JFET AN-7502 RFM15N15 7502 transistor AN75 AN752
Text: this Note, device waveforms are explained by considering the interaction of a vertical JFET driven in , JFET that contributes significantly to switching speed. Figure 1 is a cross-sectional view of a typical power MOSFET, with MOSFET/ JFET symbols superimposed on the structure. Figure 2 is obtained by taking the lateral MOS and vertical JFET from this conception and adding all the possible nodeto-node , METAL POLY GATE GLASS GATE OXIDE n+ SOURCE p BODY MOS JFET p+ 0 10 VOLTS DEPLETION EDGE


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2010 - SJEP170R550

Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Text: the right to change products or specifications without notice. 3 ADVANCED INFORMATION SiC JFET , products or specifications without notice. 4 ADVANCED INFORMATION SiC JFET ASJE1700R550 Figure , change products or specifications without notice. 5 ADVANCED INFORMATION SiC JFET ASJE1700R550 , ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET , www.micross.com Micross Components reserves the right to change products or specifications without notice. 1


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PDF ASJE1700R550 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 semisouth JFET 3E05 SEMISOUTH JFET semisouth
2001 - jfet cascode

Abstract: mosfet equivalent AN-7502 mos cascode AN72 RFM15N15 high transconductance JFET Fairchild presentation
Text: considering the interaction of a vertical JFET driven in cascode from a lateral MOSFET in combination with the , devices is the equivalent of a depletion layer JFET that contributes significantly to switching speed. Figure 1 is a cross-sectional view of a typical power MOSFET, with MOSFET/ JFET symbols superimposed on the structure. Figure 2 is obtained by taking the lateral MOS and vertical JFET from this conception , 1999 AN-7502 SOURCE METAL POLY GATE GLASS GATE OXIDE n+ SOURCE p BODY MOS JFET p


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2000 - low noise amplifier projects

Abstract: home electronic projects schematic schematic diagram cpl inverter
Text: LF444 Quad Low Power JFET Input Operational Amplifier August 2000 LF444 Quad Low Power JFET , JFET input devices of the LF444 reduce the input bias and offset currents by a factor of 10,000 over , specifications . Supply Voltage Differential Input Voltage Input Voltage Range (Note 1) Output Short Circuit , available in "D" package only. Note 5: Unless otherwise specified the specifications apply over the full , military specifications . Note 9: Max. Power Dissipation is defined by the package characteristics


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PDF LF444 LM148 LM148. low noise amplifier projects home electronic projects schematic schematic diagram cpl inverter
2002 - POWER MOSFET APPLICATION NOTE

Abstract: vertical JFET AN-7506 IRF130 diode c23 resistance control for semiconductor subcircuit Fairchild Power MOSFET AN75 jfet cascode jfet spice model
Text: capacitances change with bias conditions, the presence of a cascode JFET that complicates both static and , easiest way to understand its electrical characteristics is to think of it as a vertical JFET , driven in , the lateral MOSFET, as well as the source of the vertical JFET . The JFET channel is thenregion between the two p-type body diffusions, which act as the gate of the JFET . The JFET drain is the n+ bulk , SOURCE p+ MOS p BODY JFET 0V 10V DEPLETION 40V LAYER n+ DRAIN FIGURE 1. A


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2n4117 equivalent

Abstract: ACH-04-08-05 piezoelectric cantilever ACH-04-08-09 MSI Electronics 2N4117 datasheet 2n4117 jfet piezoelectric contact accelerometer MSI IC 2n4117 jfet
Text: 2N4117. Specifications modified from standard 2N4117 JFET 's. Rev B Measurement Specialties , element oriented to measure acceleration in the plane of the device. An internal JFET provides for a low , Printed in U.S.A. For drawings, technical data or samples, call 610-650-1500. Specifications subject to change. Consult MSI for latest specifications . ER: 1005864-1 Accelerometer ACH-04-08-09 20-07 , JFET Drain or Source 2 D/S2-Y Y-Axis JFET Source or Drain 4 SGND Sensor Common 8


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PDF ACH-04-08-09 ACH-04-08-09. ACH-04-08-09 2n4117 equivalent ACH-04-08-05 piezoelectric cantilever MSI Electronics 2N4117 datasheet 2n4117 jfet piezoelectric contact accelerometer MSI IC 2n4117 jfet
2009 - BF862

Abstract: bf862 photodiode LT6230-10 SFH213 LT6230 LTC6240 jfet "SIT" LT1222 jfet photodiode bf862 photodiode JFET
Text: NXP JFET BF862, allow ing the user to take advantage of each component' particular optimization , trademarks ofthe companies that manuf acture the products. Specifications are typical at TA = 25°C, Vs = +/ -5V CONDI ONS, COM M ENTS TI Nominal Source Follow er JFET in Gain R1 + R2 LTC6240 (Vos + Ibias*10M ) LTC6240 (dVos/ +dIbias/ *10M ) dT dT LTC6240 + BF862 f =100kHz, JFET in gain conf , =10kHz, JFET in gain conf iguration JP8 at 1,2 (LT6230) JP8 at 2,3 (LT6230-10) Source Follow er, JP8


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PDF LT6230, LT6230-10, TLTC6240 LT6230 LT6230-10 LTC6240 BF862, 100kH 130nV/ BF862 bf862 photodiode SFH213 jfet "SIT" LT1222 jfet photodiode bf862 photodiode JFET
2010 - SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Text: specifications without notice. 5 ADVANCED INFORMATION SiC JFET ASJD1200R085 MECHANICAL DRAWING , the right to change products or specifications without notice. 6 ADVANCED INFORMATION SiC JFET , ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET , www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCED INFORMATION SiC JFET ASJD1200R085 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics


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PDF ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET
2008 - bf862 photodiode

Abstract: bf862 photodiode JFET BF862 SFH213 photodiode GaI jfet photodiode LT1222 jfet "SIT" ATIC 95 OF JFET
Text: current noise LT1793 opamp, along with the discrete NXP JFET BF862, allowing the user to take advantage , product names may be trademarks ofthe companies that manuf acture the products. Specifications are , / +dIbias/ *10M ) dT dT LT1793 + BF862 f =100kHz, JFET in gain conf iguration f =100kHz, Source f , OPERATING PRINCIPL ES Composite amplif iers using single JFET inputs can be classif into two groups: common drain (or "source ied f ollower") and common source (or " JFET in gain"). The standard j umper


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PDF LT1222 LT1793 BF862, 100kH 130nV/ LT1793 40fA/H bf862 photodiode bf862 photodiode JFET BF862 SFH213 photodiode GaI jfet photodiode jfet "SIT" ATIC 95 OF JFET
2004 - hydrophone transducer

Abstract: hydrophone thermal noise LT1028 Biased Current Transducer matched pair JFET LT1792 hydrophone LT1793 LT1464 LT1169
Text: DESIGN FEATURES JFET Op Amps Equal Low Noise Bipolars and Have Picoamp by Alexander Strong Current Noise The LT1792 and LT1793 are single JFET op amps that offer both very low voltage noise (4nV , transducer at hand. For high transducer impedance, the LT1792/LT1793 JFET op amps will win over the lowest , typical JFET op amps due to lower voltage noise for the same tail current of the differential input , noise, slew rate and gain-bandwidth product are 100% tested. All of the specifications are maintained


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PDF LT1792 LT1793 LT1792 LT1793) 10fA/Hz LT1792/LT1793 hydrophone transducer hydrophone thermal noise LT1028 Biased Current Transducer matched pair JFET hydrophone LT1464 LT1169
2010 - JFET semisouth

Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Text: products or specifications without notice. 3 ADVANCED INFORMATION SiC JFET ASJE1200R063 Figure 7 , the right to change products or specifications without notice. 6 ADVANCED INFORMATION SiC JFET , ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET , Components reserves the right to change products or specifications without notice. 1 ADVANCED INFORMATION SiC JFET ASJE1200R063 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics


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PDF ASJE1200R063 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 JFET semisouth SiC JFET SEMISOUTH sjep120r0
2010 - SiC JFET

Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Text: or specifications without notice. 2 ADVANCED INFORMATION SiC JFET ASJD1200R045 MECHANICAL , ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET , website at www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCED INFORMATION SiC JFET ASJD1200R045 ELECTRICAL CHARACTERISTICS , website http://www.semisouth.com/products/products.html for datasheet specifications and ordering


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PDF ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth 5A JFET SEMISOUTH SJDP
1998 - "Instrumentation Amplifiers"

Abstract: MN2310 MN2311 MN2312 MIL-H38534
Text: ://www.mnc.com MN2310 Series Low Noise JFET Instrumentation Amplifiers Specifications Specifications , MN2310 Series Precision, Low-Noise JFET Instrumentation Amplifiers The MN2310 Series , large-area discrete JFET differential input stage. These selected and matched JFETs exhibit superior noise characteristics to those available in monolithic JFET instrumentation amplifiers. Features: s Ultra Low Noise: 1.65nV/ Hz Voltage Noise 4fA/ Hz Current Noise s Sub-Audio 1/f Noise Corner The JFET input stage is


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PDF MN2310 /-15V 050typ "Instrumentation Amplifiers" MN2311 MN2312 MIL-H38534
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