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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
V23057A 2A102 (1393215-5) TE Connectivity (1393215-5) V23057-A0002-A102
V23057B0006A102 (7-1393215-9) TE Connectivity (7-1393215-9) V23057-B0006-A102
TPA102DGNR Texas Instruments 150-mW Stereo Audio Power Amplifier 8-MSOP-PowerPAD
PGA102AG Texas Instruments INSTRUMENTATION AMPLIFIER, 500uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP16, HERMETIC SEALED, CERAMIC, DIP-16
PGA102AG-BI Texas Instruments INSTRUMENTATION AMPLIFIER, 500uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP16, CERAMIC, DIP-16
PGA102BG Texas Instruments INSTRUMENTATION AMPLIFIER, 250uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP16, HERMETIC SEALED, DIP-16

JESD22-A102 Datasheets Context Search

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JESD22-A118

Abstract: SUMITOMO G631H cel9220 Ablebond 8600 sumitomo g770hcd SUMITOMO CRM1076 SUMITOMO G700 G631H sumitomo g770 sumitomo G700ly
Text: ) JESD22-A102 45/0 High Temp. Storage Test (150 °C, 1000 Hrs) JESD22-A103 45/0 Note: * Test , hrs) JESD22-A102 77/0 High Temp. Storage Test (150 °C, 1000 Hrs) JESD22-A103 77/0 , %RH/2 ATM, 168 hrs) JESD22-A102 45/0 High Temp. Storage Test (150 °C, 1000 Hrs) JESD22-A103 , Test (121 °C/100%RH/15PSIG, 168 hrs) JESD22-A102 77/0 High Temp. Storage Test (150 °C, 1000


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PDF A1004-01 2-Apr-2010 VFQFP-N-32 2-Jul-2010 S395CKLF 9LVRS395CKLFT 9LVRS395ENGKLF 9LVRS395ENGKLFT 9LVRS396AKLF 9LVRS396AKLFT JESD22-A118 SUMITOMO G631H cel9220 Ablebond 8600 sumitomo g770hcd SUMITOMO CRM1076 SUMITOMO G700 G631H sumitomo g770 sumitomo G700ly
SUMITOMO CRM1076

Abstract: JESD22-A113 sumitomo g770hcd SUMITOMO G631H cel9220 JESD22-A118 JESD22-A103 Ablebond 8600 sumitomo g770 G631H
Text: Test (121 °C/100%RH/15PSIG, 168 hrs) JESD22-A102 45/0 High Temp. Storage Test (150 °C, 1000 , /0 * Pressure Cooker Test (121 °C/100%RH/15PSIG, 168 hrs) JESD22-A102 77/0 High Temp , ) JESD22-A104 45/0 * Pressure Cooker Test (121 °C/100%RH/2 ATM, 168 hrs) JESD22-A102 45/0 High , ) JESD22-A102 77/0 High Temp. Storage Test (150 °C, 1000 Hrs) JESD22-A103 77/0 Note: * Test


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PDF A1004-01R1 4-Jun-2010 VFQFP-N-32 2-Jul-2010 S395CKLF 9LVRS395CKLFT 9LVRS395ENGKLF 9LVRS395ENGKLFT 9LVRS396AKLF 9LVRS396AKLFT SUMITOMO CRM1076 JESD22-A113 sumitomo g770hcd SUMITOMO G631H cel9220 JESD22-A118 JESD22-A103 Ablebond 8600 sumitomo g770 G631H
EN4900GC

Abstract: JESD22-A103 CEL9220HF JESD22-A113 CRM1076 Compound CEL9220HF cel-9220HF cel9220 JESD-22-A113 JESD22-A102
Text: Test Results (SS / Rej) * Pressure Cooker Test (121 °C/15 psig, 96 Hrs) JESD22-A102 77/0, 77 , Test (121 °C/100%RH, 2 ATM, 500 Hrs) JESD22-A102 77/0 * Temperature Cycle (-65 °C to +150 °C , ) * Pressure Cooker Test (121 °C/100%RH, 2 ATM, 168 Hrs) JESD22-A102 45/0 * High Accelerated Stress , Method Test Results (SS / Rej) * Pressure Cooker Test (121 °C/15 psig, 96 Hrs) JESD22-A102


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PDF A1007-02 2-Aug-2010 SSOP-28) 2-Nov-2010 JESD22-A113 LDS6000PYGI LDS6000PYGI8 LDS6003PYGI LDS6003PYGI8 EN4900GC JESD22-A103 CEL9220HF CRM1076 Compound CEL9220HF cel-9220HF cel9220 JESD-22-A113 JESD22-A102
2008 - JESD22-A104

Abstract: JESD22-A101 JESD22-A102 transistor a102 JESD22-A119 JESD22-B106 JESD22A104 A9273 a102 transistor JESD22A-101
Text: ) JESD22-A102 JESD22-A119 JESD22-A103 JESD22-A102 Electrical Stress Trials Electrical Trial Type


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PDF ISO/TS16949 A9273 JESD22-A104 JESD22-A101 77oat) JESD22-A102 JESD22-A119 JESD22-A103 JESD22-A108) JESD22-A104 JESD22-A101 JESD22-A102 transistor a102 JESD22-A119 JESD22-B106 JESD22A104 A9273 a102 transistor JESD22A-101
aec-q100 001

Abstract: JESD22-A108 JESD22-A110 cd4051bcn JESD22-A102 MIL-STD-883-2019 mm74c925n MM74C48N mm74c922n MM74C923WM
Text: Standard JESD22-A102 JESD22-A102 JESD22-A102 Test Conditions 121C, 100%RH 121C, 100%RH 121C, 100


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PDF 20033803-B 1-207CN CD4541BCM CD4724BCM MM74C00M MM74C02N MM74C04N MM74C14MX MM74C157N MM74C165N aec-q100 001 JESD22-A108 JESD22-A110 cd4051bcn JESD22-A102 MIL-STD-883-2019 mm74c925n MM74C48N mm74c922n MM74C923WM
2007 - JESD22-A102

Abstract: JESD22-A101 JESD22-A119 a102 transistor transistor a102 a103 transistor JESD22A102 A102 JESD22-A-101 JESD22-A103
Text: (Temperature Humidity + Bias) JESD22-A102 JESD22-A119 JESD22-A103 JESD22-A102 JESD22-A104 JESD22-A101


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PDF ISO/TS16949 A9273 OT323 JESD22-A108 854E-04 JESD22-A102 JESD22-A101 JESD22-A119 a102 transistor transistor a102 a103 transistor JESD22A102 A102 JESD22-A-101 JESD22-A103
2001 - JEDEC JESD22-B116

Abstract: SUMIKON EME EME7351-LP EME-7351 71V016H KMC-184 SB-U-00-004 MIL-STD-883 SB-U-02-002 mold compound
Text: -883 Method 1010 MIL-STD-883 Method 1005 MIL-STD-883 Method 1008 EIA/ JESD22-A102 JEDEC J-STD-20 MIL-STD , 1008 EIA/ JESD22-A102 JEDEC J-STD-20 MIL-STD-883 Method 2010 MIL-STD-883 Method 2009 JEDEC J-STD-035 Per , -883 Method 1005 MIL-STD-883 Method 1008 EIA/ JESD22-A102 JEDEC J-STD-20 MIL-STD-883 Method 2010 MIL-STD , -883 Method 1005 MIL-STD-883 Method 1008 EIA/ JESD22-A102 JEDEC J-STD-20 MIL-STD-883 Method 2010 MIL-STD


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PDF G-0110-06 EME-7351LP EME-S351LP 4-10h JEDEC JESD22-B116 SUMIKON EME EME7351-LP EME-7351 71V016H KMC-184 SB-U-00-004 MIL-STD-883 SB-U-02-002 mold compound
AEC-Q100-006

Abstract: aec-q100 001 AEC-Q100 NC7SP125P5X NC7SV86P5X JESD22-A110 NC7SV158 tsmc cmos NC7SV125P5X NC7SP32P5X
Text: Q20030060ABACLVA Device NC7SV125P5X NC7SV125P5X Industry Standard JESD22-A102 JESD22-A102 Test


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PDF Q20030060 FS35C SC-70 NC7SP00P5X NC7SP05P5X NC7SP126P5X NC7SP158P6X NC7SP32P5X NC7SP57P6X NC7SPU04P5X AEC-Q100-006 aec-q100 001 AEC-Q100 NC7SP125P5X NC7SV86P5X JESD22-A110 NC7SV158 tsmc cmos NC7SV125P5X NC7SP32P5X
EN4900GC

Abstract: NC7720 CEL9220HF10 EME-G760L EME-G760 HL832nxa Yizbond Hitachi EN4900GC CEL9220 DS-7409HG
Text: ) hrs Autoclave (PCT) JESD22-A102 121°C / 100% RH, 96 hrs 77/0 Biased HAST JESD22-A110 130°C / 85 , ) hrs HAST JESD22-A102 130°C / 85%RH, 96 hrs 77/0 Biased HAST JESD22-A110 130°C / 85%RH, 3.3V, 96


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PDF PCN1-110704 EFM32G890F128 J-STD-020D, JESD22-A113 JESD22-A104 C/125 JESD22-A103 JESD22-A102 JESD22-A110 EN4900GC NC7720 CEL9220HF10 EME-G760L EME-G760 HL832nxa Yizbond Hitachi EN4900GC CEL9220 DS-7409HG
AEC-Q100-006

Abstract: aec-q100 001 NC7SP125P5X b0332 NC7SV86P5X 0.35 tsmc cmos front of fabrication process aec-q100 NC7WV04P6X JESD22-A110
Text: Q20030061AAACLVA Q20030061ABACLVA Device NC7SV125P5X NC7SV125P5X Industry Standard JESD22-A102 JESD22-A102 Test Conditions 121C, 100%RH 121C, 100%RH Read Points 96 hrs 96 hrs Test: (High


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PDF Q20030061 FS35C SC-70 NC7SP00P5X NC7SP05P5X NC7SP126P5X NC7SP158P6X NC7SP32P5X NC7SP57P6X NC7SPU04P5X AEC-Q100-006 aec-q100 001 NC7SP125P5X b0332 NC7SV86P5X 0.35 tsmc cmos front of fabrication process aec-q100 NC7WV04P6X JESD22-A110
1N5646A JANTX

Abstract: 1N5555UEJ diode 716 1N5645A JANTX 1N5635A
Text: , the issues of these documents are those cited in the solicitation or contract. JESD22-A102 - , JESD22-A102 Hermetic seal not applicable; autoclave, 96 hours, 121°C, 30 psig. B2 4066 Condition , JESD22-A102 1051 JESD22-A102 1051 C5 Not applicable C6 1026 Conditions Autoclave


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PDF MIL-PRF-19500/716 1N5555UEG 1N5558UEG, 1N5555UEJ 1N5558UEJ, 1N5629AUEG 1N5665AUEG, 1N5629AUEJ 1N5665AUEJ, 1N5907UEG, 1N5646A JANTX 1N5555UEJ diode 716 1N5645A JANTX 1N5635A
JESD22-A108

Abstract: JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD22-A110-b JESD-22-A108 JESD22A110B jesd22a105 igbt qualification circuit
Text: NBR OF LOTS 3 SS Results Ref Specs 25 0 Data sheet JESD22-A102 96 Hrs 3 , Data sheet JESD22-A102 96 Hrs 3 77 0 1000 cycles 3 77 0 1000 hours 3


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PDF 0030402-A. FGB20N6S2D FGB30N6S2 FGB30N6S2T FGH20N6S2 FGH30N6S2D FGH50N3 FGH60N6S2 FGP20N6S2D FGP40N6S2 JESD22-A108 JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD22-A110-b JESD-22-A108 JESD22A110B jesd22a105 igbt qualification circuit
2008 - JESD22-B106

Abstract: JESD22-A119 qfn16 JESD22-A102 a103 transistor A9273 Zetex Semiconductors 226800 QSOP16 QSOP20
Text: Bias) JESD22-A102 JESD22-A119 JESD22-A103 JESD22-B106 IEC68-2-20 JESD22-A104 JESD22-A101 4


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PDF ISO/TS16949 A9273 MSOP10, QFN1633085E, QFN1633, QFN1644, QFN2444, QSOP16, QSOP20, QSOP24, JESD22-B106 JESD22-A119 qfn16 JESD22-A102 a103 transistor A9273 Zetex Semiconductors 226800 QSOP16 QSOP20
2008 - JESD22-A108

Abstract: JESD22-A102 A9273 JESD22-B106 JESD22-A103 JESD22A108 Zetex Semiconductors a102 transistor JESD22-A101 203E
Text: Bias) JESD22-A102 JESD22-A103 JESD22-B106 JESD22-A104 JESD22-A101 1 1 1 1 1 45 45 45


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PDF ISO/TS16949 A9273 SC70-5 JESD22-A102 JESD2JESD22-A101 JESD22-A108) 312E-04 JESD22-A108 JESD22-A102 A9273 JESD22-B106 JESD22-A103 JESD22A108 Zetex Semiconductors a102 transistor JESD22-A101 203E
2008 - JESD22-B106

Abstract: A9273 JESD22-A119 JESD22-A102 Zetex Semiconductors TSOT23-5 JESD22-A103 DFN1443 MSOP10 SC70-6
Text: (Resistance to Solder Heat Float) Solderability (Post Hot Store) JESD22-A119 JESD22-A103 JESD22-A102


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PDF ISO/TS16949 A9273 DFN1443, MSOP10, QFN1644, SC70-6, OT23-5, OT23-6, TSOT23-5 JESD22-A119 JESD22-B106 A9273 JESD22-A119 JESD22-A102 Zetex Semiconductors TSOT23-5 JESD22-A103 DFN1443 MSOP10 SC70-6
JESD22-A102

Abstract: DPM 659 DO-160G Unbiased HAST 130, 85 RH, 100 Hrs 92691 44PTQS JESD22-A104 - TEST CONDITION K 11Q2 JESD22-A110 64PTQS
Text: JESD22-A104 JESD22-A102 JESD22-A103 Table 2 ­ Nonhermetic Package/Assembly Qualification Reliability Test , Industry Standard JESD22-A113 AN-400 JESD22-A110 JESD22-A104 JESD22-A102 Accept Criteria Fail/SS , Industry Standard JESD22-A110 JESD22-A104 JESD22-A102 SS/Pkg Family/Quarter 45 45 45 45 High


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PDF QR-1222, 92691Tel: 32PQS, 64PQS, JESD22-A102 DPM 659 DO-160G Unbiased HAST 130, 85 RH, 100 Hrs 92691 44PTQS JESD22-A104 - TEST CONDITION K 11Q2 JESD22-A110 64PTQS
2008 - ic of 4543

Abstract: JESD22-A108 TSOT23-5 JESD22-B106 JESD22-A102 JESD22-A101 IEC68-2-20 DFN533075E A9273 test SOt23
Text: ) Solderability (Post Hot Store) JESD22-A119 JESD22-A102 Electrical Stress Trials Electrical Trial Type


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PDF ISO/TS16949 A9273 DFN533075E, OT23-5 TSOT23-5 JESD22-A104 JESD22-A119 JESD22-A102 JESD22-A108) 692E-03 ic of 4543 JESD22-A108 TSOT23-5 JESD22-B106 JESD22-A102 JESD22-A101 IEC68-2-20 DFN533075E A9273 test SOt23
2007 - transistor a102

Abstract: a103 transistor JESD22-B106 JESD22-A119 JESD22-A103 JESD22-A104 JESD22-A102 pdf A101 datasheet JESD22-A108 A9273
Text: Store) TC (Temperature Cycle Air to Air) THB (Temperature Humidity + Bias) JESD22-A102 JESD22-A119


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PDF ISO/TS16949 A9273 OD323, OD523, OT23-6 OT323 JESD22-A101 JESD22-A108) 763E-04 transistor a102 a103 transistor JESD22-B106 JESD22-A119 JESD22-A103 JESD22-A104 JESD22-A102 pdf A101 datasheet JESD22-A108 A9273
2002 - GE1030

Abstract: ge1030t JESD22 B100 GE-1030T JESD22-A102 JESD22-A110 JESD22-A108 F-459 JESD22-A101 MIL-STD-883 Method 2019
Text: JESD22-A110 231/0 * 121 °C @ 2 atmospheres absolute for 96 hours JESD22-A102 231/0 , °C @ 2 atmospheres absolute for 96 hours 77/0 JESD22-A102 * -65 °C to +150 °C


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PDF CLVCH16T245MDGGREP JESD22-A108 GE1030 ge1030t JESD22 B100 GE-1030T JESD22-A102 JESD22-A110 JESD22-A108 F-459 JESD22-A101 MIL-STD-883 Method 2019
JESD22-A102

Abstract: JESD22-A108 jedec jesd22-a108 RF2373 RF3857 transistor A114 260C3X JESD22A102 JESD22-A101 JESD22-B102
Text: B -55 /+125°C, soak mode 1, 500 cycles 22 x 3 lots Loose Piece Pressure Pot JESD22-A102


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PDF RF3857 08QUAL960 RF2373 JESD22-A101 JESD22-A114 JESD22C101 JESD22-B102, J-STD-020 JESD22-A108 JESD22-A103, JESD22-A102 JESD22-A108 jedec jesd22-a108 RF2373 transistor A114 260C3X JESD22A102 JESD22-A101 JESD22-B102
2008 - 7490

Abstract: data sheet 7490 application of 7490 7490 data sheet 39 77 in sot223 package of 7490 7490 datasheet hs sot223 JESD22-B106 JESD22-A108
Text: Store) JESD22-A119 JESD22-A103 JESD22-A102 Electrical Stress Trials Electrical Trial Type


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PDF ISO/TS16949 A9273 OT223 JESD22-A104 JESD22-A101 JESD22-A119 JESD22-A103 JESD22-A102 JESD22-A108) 7490 data sheet 7490 application of 7490 7490 data sheet 39 77 in sot223 package of 7490 7490 datasheet hs sot223 JESD22-B106 JESD22-A108
2008 - JESD22-B106

Abstract: JESD22-A119 JESD22-A102 JESD22 A9273 JESD22-A108 transistor a102 IEC-68-2-20 IEC68-2-20 JESD22-A101
Text: Store) JESD22-A119 JESD22-A103 JESD22-A102 Electrical Stress Trials Electrical Trial Type


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PDF ISO/TS16949 A9273 OT23F, OT23-6 JESD22-A104 JESD22-A101 JESD22-A119 JESD22-A103 JESD22-A102 JESD22-A108) JESD22-B106 JESD22-A119 JESD22-A102 JESD22 A9273 JESD22-A108 transistor a102 IEC-68-2-20 IEC68-2-20 JESD22-A101
2007 - JESD22-A119

Abstract: a103 transistor transistor a102 JESD22-B106 JESD22-A108 A9273 JESD22-A102 JESD22-A103 JESD22-B102 JESD22A108
Text: (Temperature Humidity + Bias) JESD22-A102 JESD22-A119 JESD22-A103 JESD22-B106 JESD22-B102 JESD22-A104


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PDF ISO/TS16949 A9273 OT223 JESD22-A108 087E-04 JESD22-A119 a103 transistor transistor a102 JESD22-B106 JESD22-A108 A9273 JESD22-A102 JESD22-A103 JESD22-B102 JESD22A108
2010 - Not Available

Abstract: No abstract text available
Text: JESD22-A102 TEST DESCRIPTION MIC35302WD COMMENTS Rej/ss JESD22-A104 Pre-conditioning 3X


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PDF MIC35152WD MIC35302WD O-252-5L 7A31835 JESD22-A108 C/100
2008 - JESD22-A119

Abstract: JESD22-B106 a103 transistor JESD22-A103 JESD22-A108 A9273 IEC68-2-20 JESD22-A101 JESD22-A102
Text: ) TC (Temperature Cycle Air to Air) JESD22-A119 JESD22-A103 JESD22-A102 Electrical Stress


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PDF ISO/TS16949 A9273 JESD22-A101 JESD22-B106 IEC68-2-20 JESD22-A104 JESD22-A119 JESD22-A103 JESD22-A102 JESD22-A108) JESD22-A119 JESD22-B106 a103 transistor JESD22-A103 JESD22-A108 A9273 IEC68-2-20 JESD22-A101 JESD22-A102
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