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JANTXV2N7334 Microsemi Corporation Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN

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JANTXV2N7334 datasheet (5)

Part Manufacturer Description Type PDF
JANTXV2N7334 International Rectifier POWER MOSFET Original PDF
JANTXV2N7334 International Rectifier 100V Quad N-Channel MOSFET in a MO-036AB package Original PDF
JANTXV2N7334 Microsemi FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH Original PDF
JANTXV2N7334 International Rectifier 4 N-Channel Power MOSFETs Scan PDF
JANTXV2N7334(N) International Rectifier 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package Original PDF

JANTXV2N7334 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N7225

Abstract:
Text: Government and Space Designer's Manual Table of Contents HEXFET Section & Page No. IRF S E R IE S .1-3 IRFE S E R IE S. 1-95 IRFF S E R IE S .1-147 IRFG110, 2N7334, JANTX2N7334, JANTXV2N7334.


OCR Scan
PDF IRFG110, 2N7334, JANTX2N7334, JANTXV2N7334. I-405 FV064. FV360. FV460. 2N7225 jantxv2n7224
irfy430

Abstract:
Text: Government/ ■4flss4se 0Dlbl?1 bM1 "INR Other Products Space Products From ,R K INTERNATIONAL RECTIFIER bSE D HEXFET - High Reliability/Mil Qualified Id® >d @ •hhjc Pd ® Part Number bvdsS "DS(oxi) Tc = 25°c Tc = 100°C Max. TC = 25"C Notes Cass Style (V) (OHMS) (*) (A) (WW) (W) irfg110 100 0.70 1.0 0.6 17 1.4 M0-036AB 2n7334 100 0.70 1.0 0.6 17 1.4 jantx2n7334 100 0.70 1.0 0.6 17 1.4 jantxv2n7334 100 0.70 1.0 0.6 17 1.4 irfg5110 100 0.70 1.0 0.6 17 1.4 irfg5110 -100


OCR Scan
PDF irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430
Not Available

Abstract:
Text: Government and Space HEXFET Power MOSFETs Hermetic Package N & P Channel International IlC T R e c H ffe r Part Number IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* b v DSS (V) 100 100 100 100 100 -100 100 -100 100 -100 100 -100 100 -100 -100 -100 -100 -100 60 400 500 RDS(on) (Ohms) 0.70 0.70 0.70 0.70 0.70 0.70 0.70 1.4 0.7 1.4 0.7 1.4 0.7 1.4 1.4 1.4 1.4 1.4 lp @ Tr = 25°C (»> 1.0 1.0 1.0 1.0 1.0 -1.0 1.0 -0.75 1.0 -0.75 1.0 -0.75 1.0 -0.75 -0.75 -0.75 -0.75 -0.75 45 25 21


OCR Scan
PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460
2002 - MO-036AB

Abstract:
Text: PD - 90396G POWER MOSFET THRU-HOLE (MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG110 RDS(on) 0.7 ID 1.0A HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established


Original
PDF 90396G MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 MIL-PRF-19500/597 150mH MO-036AB MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334
irfm9034

Abstract:
Text: JANTX2N7237 JANTXV2N7237 IRFG110 JANTX2N7334 JANTXV2N7334 IRFG5110* IRFG6110* JANTX2N7336* JANTXV2N7336


OCR Scan
PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034
2002 - 036-AB

Abstract:
Text: PD - 90396F POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRFG110 IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.7 ID 1.0A HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of


Original
PDF 90396F MO-036AB) IRFG110 IRFG110 JANTX2N7334 JANTXV2N7334 MIL-PRF-19500/597 150mH MO-036AB 036-AB
2010 - IRFG110

Abstract:
Text: PD-90396H POWER MOSFET THRU-HOLE (MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 1.0A HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established


Original
PDF PD-90396H MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 MIL-PRF-19500/597 150mH MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 MO-036AB
Not Available

Abstract:
Text: PD-90396H POWER MOSFET THRU-HOLE (MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the


Original
PDF PD-90396H MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 MIL-PRF-19500/597 150mH MO-036AB
2N7334

Abstract:
Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE) IRFG110 JANTXV2N7334 [REF: MIL-S-19500/5S7] 100 Volt, 0.70 Ohm ® The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse


OCR Scan
PDF IRFG110 JANTXV2N7334 MIL-S-19500/5S7] 2N7334 I-207 JANTXV2N7334
2N7334

Abstract:
Text: - and P-Channel Part Number IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110 bv d ss Other Products


OCR Scan
PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 H24 SMD irfg9110
1997 - IRFM9034

Abstract:
Text: JANTX2N7334 JANTXV2N7334 IRFG9110 JANTX2N7335 JANTXV2N7335 IRFG5110 IRFG6110 100 -100 JANTX2N7336


Original
PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 international rectifier p IRFE310 IRFM460 irh7c50se irhy JANSR2N7261
1997 - 10RIA10

Abstract:
Text: 1 0.6 1.4 JANTXV2N7334 100 0.7 1 0.6 1.4 -100 1.4 -0.75 -0.5


Original
PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 DO-203AA 85HF Smd diod 40HF 10RIA60 10RIA40 10RIA120
2007 - IRF460

Abstract:
Text: No file text available


Original
PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt 550-065 IRF3504 SMD TRANSISTOR MARKING AHP
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