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Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

J8 marking transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
International Power Sources

Abstract: LWE2025R
Text: LINEAR POWER TRANSISTOR NPN silicon power transistor for use in a common-emitter,class-A amplifier up to , power and low thermal resistance • 5 GHz technology The transistor is housed in a metal ceramic , Zl n CW; class-A 2.3 16 400 >2 > 7 2 + j8 5.5 -j 1.8 MECHANICAL DATA Dimensions in mm FO-93 (see , emitter 0.76 RATINGS Limiting values in accordance with the Absolute Maximum System (I EC 134) Marking , Copyrighted By Its Respective Manufacturer Microwave linear power transistor philips international T


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PDF 33-OS LWE2025R 7110fl5b FO-93) MCD656 T-33-05 International Power Sources LWE2025R
MCD656

Abstract: LWE2025R
Text: LINEAR POWER TRANSISTOR NPN silicon power transistor for use in a common-emitter, class-A amplifier up , power and low thermal resistance • 5 GHz technology The transistor is housed in a metal ceramic , 2 zL n CW; class-A 2.3 16 400 >2 >7 2 + j8 5.5 —jl.S MECHANICAL DATA Dimensions in mm FO-93 (see , Absolute Maximum System (IEC 134) Dimensions in mm Marking code 413= LWE2025R Collector-base voltage , . 235 OC 162 June 1992 Y Microwave linear power transistor PHILIPS INTERNATIONAL SbE D 7Z94085 T


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PDF -T-33-OS LWE2025R 7110fl2b FO-93) MCD656 T-33-05 MCD656 LWE2025R
LTE42012R

Abstract: SC15 c 1583 transistor
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R , epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected , Ÿ) Class-A (CW) 4.2 16 400 >1 >6 7.5 + J12 4- j8 WARNING Product and environmental safety - toxic materials , ( ) O 3 2 Top view Marking code: 198 Fig. 1 Simplified outline and symbol. 1997 Feb 21 2 This , microwave power transistor LTE42012R LIMITING VALUES In accordance with the Absolute Maximum Rating System


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PDF LTE42012R OT44QA. LTE42012R SC15 c 1583 transistor
142 transistor

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , professional applications. o Top view Marking code: 198 o ~ S DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter , j12 Zl (£» 4 - j8 (dB) >6 WARNING Product and environmental safety - toxic materials This , transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). LTE42012R


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PDF LTE42012R OT44QA MGL013 142 transistor
2013 - J6 transistor

Abstract: transistor j6 transistor marking code 431
Text: EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , COPYRIGHT 2013 Page 1 EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet , Mode Power Transistor Preliminary Specification Sheet Figure 1: Figure 2: Figure 3: Figure 4 , www.epc-co.com COPYRIGHT 2013 Page 3 EPC8010 – Enhancement Mode Power Transistor Preliminary , 4 EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet S-PARAMETER


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PDF EPC8010 EPC8010 J6 transistor transistor j6 transistor marking code 431
Not Available

Abstract: No abstract text available
Text: LWE2025R Maintenance type - not for new designs MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a common-emitter,class-A am plifier up to 2.3 GHz in CW conditions , resistance • 5 GHz technology The transistor is housed in a metal ceramic studless envelope (FO-93). , 400 'c MECHANICAL DATA PL1 w >7 Gpo zi dB n >1 2 + j8 D imensions in , Fig. 1 FO-93. Marking code 4 1 3 = LWE2025F Pinning: 1 = collector 2 = base 3 = em itter


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PDF LWE2025R FO-93) Microwave-93. LWE2025F
2002 - Not Available

Abstract: No abstract text available
Text: storage junction temperature range: -55OC to +150 OC Marking : J8 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Min 25 18 4.0 -Max -0.1 0.1


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PDF MMS9018 OT-23 -55OC OT-23 100uAdc,
nec marking power amplifier

Abstract: 2SA811A marking C15
Text: NEC ELECTRON DEVICE SILICON TRANSISTOR 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD PACKAGE DIMENSIONS in millimeters do + I o 2.8 + 0.2 1.5 0.65 Marking L 1. Emitter 2. Base 3. Collector oo + I IO o FEATURE • High DC Current Gain , hpE2 Classification Marking C15 C16 C17 C18 hFE2 135 to 270 200 to 400 300 to 60Ö 450 to 900 NEC , SATURATION VOLTAGE vs. COLLECTOR CURRENT I 61 I (0 a> ±i (JO o ro > >B C J8 .2 ^ V Ul 10 = <0 O m o I


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PDF 2SA811A 2SA811A Tokyo456-3111 NECTOKJ22686 TC-1487A nec marking power amplifier marking C15
1992 - transistor number D 2498

Abstract: mtp50n05el optocoupler 2501 dip capacitor 106 35K 408 ltc3721 lt1172 application notes Transistor TO-92 TL431 LT1431MP 210UF transistor BD 325
Text: Turn-On Sink Current Capability, 1mA to 100mA Low Reference Pin Current Available in J8 , N8, S8 or 3 , COLLECTOR 1 COMP 2 V + 8 REF 7 RMID 6 GND-F 5 GND-S 3 3 RTOP 4 RTOP 4 J8 PACKAGE 8 , PART MARKING LT1431 CN8 LT1431 IN8 LT1431 LT1431I LT1431 LT1431 MJ8 LT1431 CZ LT1431 IZ PACKAGE , lead based finish parts. For more information on lead free part marking , go to: http://www.linear.com , transistor . The maximum pin voltage is 36V. The saturation voltage at 100mA is approximately 1V. COMP (Pin 2


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PDF LT1431 100mA LT1431CZ/LT1431IZ, TL431. MSOP-10E DFN-10 1431fe LTC3723-1/LTC3723-2 transistor number D 2498 mtp50n05el optocoupler 2501 dip capacitor 106 35K 408 ltc3721 lt1172 application notes Transistor TO-92 TL431 LT1431MP 210UF transistor BD 325
1992 - Not Available

Abstract: No abstract text available
Text: , 1mA to 100mA Low Reference Pin Current Available in J8 , N8, S8 or 3-Lead TO-92 Z Packages , + 7 RMID 3 6 GND-F RTOP 4 5 GND-S V J8 PACKAGE 8-LEAD CERDIP TJMAX = 150Â , AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LT1431CN8#PBF , finish parts. For more information on lead free part marking , go to: http://www.linear.com/leadfree , (Pin 1): Open collector of the output transistor . The maximum pin voltage is 36V. The saturation


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PDF LT1431 100mA 100mA DFN-10 LT1952/LT1952-1 LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC3722-2 1431fe
1992 - 2501 optocoupler

Abstract: 106 35K 050 optocoupler 2501 dip LTC3806 lt1172 application notes capacitor 106 35K transistor number D 2498 LT1431CN8 LT1431C LT1431CZ
Text: Sink Current Capability, 1mA to 100mA Low Reference Pin Current Available in J8 , N8, S8 or 3-Lead TO , RTOP 4 5 GND-S V J8 PACKAGE 8-LEAD CERDIP TJMAX = 150°C, JA = 100°C/W N8 PACKAGE 8 , °C/W Order Information LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION , non-standard lead based finish parts. For more information on lead free part marking , go to: http , (Pin 1): Open collector of the output transistor . The maximum pin voltage is 36V. The saturation


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PDF LT1431 100mA LT1431 10ous LTC3803 OT-23 200kHz LTC3806 LTC3900/LTC3901 2501 optocoupler 106 35K 050 optocoupler 2501 dip LTC3806 lt1172 application notes capacitor 106 35K transistor number D 2498 LT1431CN8 LT1431C LT1431CZ
2008 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS , NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · · · C B Electrical Characteristics , ) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Rank Range L 70~105 Min 25 18 4.0 - Max


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PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23
2008 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS , -0 flammability rating Moisure Sensitivity Level 1 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Rank Range L 70~105 Min 25 18 4.0


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PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23 100uAdc,
2007 - Not Available

Abstract: No abstract text available
Text: a floating transistor output with 50mA source/sink capability. It can drive loads referenced to , PACKAGE 8-LEAD PLASTIC SO FT1011ACN8 FT1011CN8 FT1011CS8 FT1011AIS8 FT1011IS8 S8 PART MARKING 1011 , (N8) TJMAX = 150°C, JA = 150°C/ W(S8) J8 PACKAGE 8-LEAD CERDIP TJMAX = 150°C, JA = 100°C/ W( J8


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PDF FT1011/FT1011A FT111 250ns FT1011 FT111. FT111,
2008 - Not Available

Abstract: No abstract text available
Text: storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS Compliant ("P" , Moisure Sensitivity Level 1 • • NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D C , ) Base-Emitter Saturation Voltage (IC=100mAdc, IB =1.0mAdc) E H G Transistor Frequency (IC


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PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23
1997 - LTE42012R

Abstract: No abstract text available
Text: Marking code: 198 NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic , DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product , NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A · Interdigitated , ) Zi () ZL () 4.2 16 400 1 6 7.5 + j12 4 - j8 WARNING Product and , specification NPN microwave power transistor LTE42012R LIMITING VALUES In accordance with the Absolute


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PDF LTE42012R OT440A SCA53 127147/00/02/pp12 LTE42012R
2008 - marking J8

Abstract: BF600 MMS9018
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 NPN Silicon Plastic-Encapsulate Transistor Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL , ) E H G Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) J K DIMENSIONS


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PDF MMS9018 OT-23 -55OC OT-23 marking J8 BF600 MMS9018
2012 - GaN hemt

Abstract: Gan hemt transistor
Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Features GaN depletion mode HEMT microwave transistor Common source configuration , Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed , =250mA (pulsed), F=2.7-3.5 GHz, Pulse=300us, Duty=10%. 40W GaN Power Transistor Evaluation Fixture · North , Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Absolute Maximum Ratings Table (1


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PDF MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor
2014 - Not Available

Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base , LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 , BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 5. Thermal characteristics , reserved. 3 of 14 BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 8. RF


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PDF BLC8G27LS-160AV
2009 - PH2729-65M

Abstract: No abstract text available
Text: PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features · · · · · · · · · NPN silicon , contained herein without notice. PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs , j8 .3 9.3 - j8 .9 2.8 7.3 - j6.7 9.0 - j8 .4 2.9 7.2 - j5.0 8.6 - j8 .0 2 , ) or information contained herein without notice. PH2729-65M Radar Pulsed Power Transistor 65W


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PDF PH2729-65M PH2729-65M
2007 - Not Available

Abstract: No abstract text available
Text: PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , -65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun , () 7.8 - j8 .3 7.3 - j6.7 7.2 - j5.0 ZOF () 9.3 - j8 .9 9.0 - j8 .4 8.6 - j8 .0 2 ADVANCED: Data , -65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions


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PDF PH2729-65M
2002 - SMD TRANSISTOR j8

Abstract: transistor SMD J9 transistor smd j6 smd transistor J6 transistor SMD wm j13 SMD Transistor transistor wm WM8762-EV1M WM8762EV1 SMD Transistor PNP 3pin
Text: from the WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of , 1 J7 J8 1 2 3 4 5 6 LNK1 H1 J10 1 3 5 7 9 11 1 2 4 6


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PDF WM8762 WM8762 24-bit, 192kHz WM8762. WM8762-EV1B WM8762-EV1M SMD TRANSISTOR j8 transistor SMD J9 transistor smd j6 smd transistor J6 transistor SMD wm j13 SMD Transistor transistor wm WM8762EV1 SMD Transistor PNP 3pin
2011 - 20 watts transistor s-band

Abstract: j948
Text: DESCRIPTION The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable , across the 3100 to 3500 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and , , 300 s, 10% 3100 - 3500 MHz Transistor Impedance Information Impedance Data Freq (GHz) 3.1 3.2 3.3 3.4 3.5 Zs 5.02 ­ j9.48 4.48 ­ j9.28 3.92 ­ j8 .98 3.42 ­ j8 .64 3.00 ­ j8 .28 Zl 5.04 ­ j4.88 4.56 ­ j5


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PDF 3135GN-170M 3135GN 55-QP 20 watts transistor s-band j948
2x4 RJ45 LED

Abstract: 810130 marking P12 transistor p11 marking J1
Text: P5 P8 TD4 J5 J7 TD4 J8 P7 P10 GND Shield P10 GND 1000pF/2KV J8 P7 , /1000 Gigabit Ethernet RJ45 2xN Port MECHANICAL : G29TS-610xx0A (2x1) Marking 28.07 4.26 3.18 , 10.80 15.49 (19.07) 17.27 Port 2 J8 J1 J1 J8 Port 1 Port 1 Port 2 P1 , : G29TS-710xx0A (2x4) Marking 28.07 0.15 G29TS-710130A Superworld 0601 4.26 3.18 3.56 , ) 59.18 Port 2 Port 8 J8 J1 J8 J1 J8 J1 J8 J1 J1 J8 J1 J8 J1


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PDF 1500Vrms IEEE802 M288027, M287944, file94219539 file11/274 file11/284 file11/304 TD1/2/3/97 2x4 RJ45 LED 810130 marking P12 transistor p11 marking J1
2007 - Not Available

Abstract: No abstract text available
Text: PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization , -11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 3.10 3.25 3.40 ZIF () 17.5 - j8 .5 15.0 - j8 .2 13.0 - j8 .0 ZOF () 90 + j37 58 + j7.0 30 + j14.5 M


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PDF PH3134-11S
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