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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

J8 marking transistor Datasheets Context Search

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International Power Sources

Abstract: LWE2025R
Text: LINEAR POWER TRANSISTOR NPN silicon power transistor for use in a common-emitter,class-A amplifier up to , power and low thermal resistance • 5 GHz technology The transistor is housed in a metal ceramic , Zl n CW; class-A 2.3 16 400 >2 > 7 2 + j8 5.5 -j 1.8 MECHANICAL DATA Dimensions in mm FO-93 (see , emitter 0.76 RATINGS Limiting values in accordance with the Absolute Maximum System (I EC 134) Marking , Copyrighted By Its Respective Manufacturer Microwave linear power transistor philips international T


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PDF 33-OS LWE2025R 7110fl5b FO-93) MCD656 T-33-05 International Power Sources LWE2025R
MCD656

Abstract: LWE2025R
Text: LINEAR POWER TRANSISTOR NPN silicon power transistor for use in a common-emitter, class-A amplifier up , power and low thermal resistance • 5 GHz technology The transistor is housed in a metal ceramic , 2 zL n CW; class-A 2.3 16 400 >2 >7 2 + j8 5.5 —jl.S MECHANICAL DATA Dimensions in mm FO-93 (see , Absolute Maximum System (IEC 134) Dimensions in mm Marking code 413= LWE2025R Collector-base voltage , . 235 OC 162 June 1992 Y Microwave linear power transistor PHILIPS INTERNATIONAL SbE D 7Z94085 T


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PDF -T-33-OS LWE2025R 7110fl2b FO-93) MCD656 T-33-05 MCD656 LWE2025R
LTE42012R

Abstract: SC15 c 1583 transistor
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R , epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected , Ÿ) Class-A (CW) 4.2 16 400 >1 >6 7.5 + J12 4- j8 WARNING Product and environmental safety - toxic materials , ( ) O 3 2 Top view Marking code: 198 Fig. 1 Simplified outline and symbol. 1997 Feb 21 2 This , microwave power transistor LTE42012R LIMITING VALUES In accordance with the Absolute Maximum Rating System


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PDF LTE42012R OT44QA. LTE42012R SC15 c 1583 transistor
142 transistor

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , professional applications. o Top view Marking code: 198 o ~ S DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter , j12 Zl (£» 4 - j8 (dB) >6 WARNING Product and environmental safety - toxic materials This , transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). LTE42012R


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PDF LTE42012R OT44QA MGL013 142 transistor
2013 - J6 transistor

Abstract: transistor j6 transistor marking code 431
Text: EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , COPYRIGHT 2013 Page 1 EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet , Mode Power Transistor Preliminary Specification Sheet Figure 1: Figure 2: Figure 3: Figure 4 , www.epc-co.com COPYRIGHT 2013 Page 3 EPC8010 – Enhancement Mode Power Transistor Preliminary , 4 EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet S-PARAMETER


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PDF EPC8010 EPC8010 J6 transistor transistor j6 transistor marking code 431
Not Available

Abstract: No abstract text available
Text: LWE2025R Maintenance type - not for new designs MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a common-emitter,class-A am plifier up to 2.3 GHz in CW conditions , resistance • 5 GHz technology The transistor is housed in a metal ceramic studless envelope (FO-93). , 400 'c MECHANICAL DATA PL1 w >7 Gpo zi dB n >1 2 + j8 D imensions in , Fig. 1 FO-93. Marking code 4 1 3 = LWE2025F Pinning: 1 = collector 2 = base 3 = em itter


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PDF LWE2025R FO-93) Microwave-93. LWE2025F
2002 - Not Available

Abstract: No abstract text available
Text: storage junction temperature range: -55OC to +150 OC Marking : J8 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Min 25 18 4.0 -Max -0.1 0.1


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PDF MMS9018 OT-23 -55OC OT-23 100uAdc,
nec marking power amplifier

Abstract: 2SA811A marking C15
Text: NEC ELECTRON DEVICE SILICON TRANSISTOR 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD PACKAGE DIMENSIONS in millimeters do + I o 2.8 + 0.2 1.5 0.65 Marking L 1. Emitter 2. Base 3. Collector oo + I IO o FEATURE • High DC Current Gain , hpE2 Classification Marking C15 C16 C17 C18 hFE2 135 to 270 200 to 400 300 to 60Ö 450 to 900 NEC , SATURATION VOLTAGE vs. COLLECTOR CURRENT I 61 I (0 a> ±i (JO o ro > >B C J8 .2 ^ V Ul 10 = <0 O m o I


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PDF 2SA811A 2SA811A Tokyo456-3111 NECTOKJ22686 TC-1487A nec marking power amplifier marking C15
1992 - transistor number D 2498

Abstract: mtp50n05el optocoupler 2501 dip capacitor 106 35K 408 ltc3721 lt1172 application notes Transistor TO-92 TL431 LT1431MP 210UF transistor BD 325
Text: Turn-On Sink Current Capability, 1mA to 100mA Low Reference Pin Current Available in J8 , N8, S8 or 3 , COLLECTOR 1 COMP 2 V + 8 REF 7 RMID 6 GND-F 5 GND-S 3 3 RTOP 4 RTOP 4 J8 PACKAGE 8 , PART MARKING LT1431 CN8 LT1431 IN8 LT1431 LT1431I LT1431 LT1431 MJ8 LT1431 CZ LT1431 IZ PACKAGE , lead based finish parts. For more information on lead free part marking , go to: http://www.linear.com , transistor . The maximum pin voltage is 36V. The saturation voltage at 100mA is approximately 1V. COMP (Pin 2


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PDF LT1431 100mA LT1431CZ/LT1431IZ, TL431. MSOP-10E DFN-10 1431fe LTC3723-1/LTC3723-2 transistor number D 2498 mtp50n05el optocoupler 2501 dip capacitor 106 35K 408 ltc3721 lt1172 application notes Transistor TO-92 TL431 LT1431MP 210UF transistor BD 325
1992 - Not Available

Abstract: No abstract text available
Text: , 1mA to 100mA Low Reference Pin Current Available in J8 , N8, S8 or 3-Lead TO-92 Z Packages , + 7 RMID 3 6 GND-F RTOP 4 5 GND-S V J8 PACKAGE 8-LEAD CERDIP TJMAX = 150Â , AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LT1431CN8#PBF , finish parts. For more information on lead free part marking , go to: http://www.linear.com/leadfree , (Pin 1): Open collector of the output transistor . The maximum pin voltage is 36V. The saturation


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PDF LT1431 100mA 100mA DFN-10 LT1952/LT1952-1 LTC3723-1/LTC3723-2 LTC3721-1/LTC3721-2 LTC3722/LTC3722-2 1431fe
1992 - 2501 optocoupler

Abstract: 106 35K 050 optocoupler 2501 dip LTC3806 lt1172 application notes capacitor 106 35K transistor number D 2498 LT1431CN8 LT1431C LT1431CZ
Text: Sink Current Capability, 1mA to 100mA Low Reference Pin Current Available in J8 , N8, S8 or 3-Lead TO , RTOP 4 5 GND-S V J8 PACKAGE 8-LEAD CERDIP TJMAX = 150°C, JA = 100°C/W N8 PACKAGE 8 , °C/W Order Information LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION , non-standard lead based finish parts. For more information on lead free part marking , go to: http , (Pin 1): Open collector of the output transistor . The maximum pin voltage is 36V. The saturation


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PDF LT1431 100mA LT1431 10ous LTC3803 OT-23 200kHz LTC3806 LTC3900/LTC3901 2501 optocoupler 106 35K 050 optocoupler 2501 dip LTC3806 lt1172 application notes capacitor 106 35K transistor number D 2498 LT1431CN8 LT1431C LT1431CZ
2008 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS , NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · · · C B Electrical Characteristics , ) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Rank Range L 70~105 Min 25 18 4.0 - Max


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PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23
2008 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS , -0 flammability rating Moisure Sensitivity Level 1 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Rank Range L 70~105 Min 25 18 4.0


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PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23 100uAdc,
2007 - Not Available

Abstract: No abstract text available
Text: a floating transistor output with 50mA source/sink capability. It can drive loads referenced to , PACKAGE 8-LEAD PLASTIC SO FT1011ACN8 FT1011CN8 FT1011CS8 FT1011AIS8 FT1011IS8 S8 PART MARKING 1011 , (N8) TJMAX = 150°C, JA = 150°C/ W(S8) J8 PACKAGE 8-LEAD CERDIP TJMAX = 150°C, JA = 100°C/ W( J8


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PDF FT1011/FT1011A FT111 250ns FT1011 FT111. FT111,
2008 - Not Available

Abstract: No abstract text available
Text: storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS Compliant ("P" , Moisure Sensitivity Level 1 • • NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D C , ) Base-Emitter Saturation Voltage (IC=100mAdc, IB =1.0mAdc) E H G Transistor Frequency (IC


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PDF MMS9018-L MMS9018-H OT-23 -55OC OT-23
1997 - LTE42012R

Abstract: No abstract text available
Text: Marking code: 198 NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic , DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product , NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A · Interdigitated , ) Zi () ZL () 4.2 16 400 1 6 7.5 + j12 4 - j8 WARNING Product and , specification NPN microwave power transistor LTE42012R LIMITING VALUES In accordance with the Absolute


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PDF LTE42012R OT440A SCA53 127147/00/02/pp12 LTE42012R
2008 - marking J8

Abstract: BF600 MMS9018
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 NPN Silicon Plastic-Encapsulate Transistor Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL , ) E H G Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) J K DIMENSIONS


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PDF MMS9018 OT-23 -55OC OT-23 marking J8 BF600 MMS9018
2012 - GaN hemt

Abstract: Gan hemt transistor
Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Features GaN depletion mode HEMT microwave transistor Common source configuration , Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed , =250mA (pulsed), F=2.7-3.5 GHz, Pulse=300us, Duty=10%. 40W GaN Power Transistor Evaluation Fixture · North , Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Absolute Maximum Ratings Table (1


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PDF MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor
2014 - Not Available

Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base , LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 , BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 5. Thermal characteristics , reserved. 3 of 14 BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 8. RF


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PDF BLC8G27LS-160AV
2009 - PH2729-65M

Abstract: No abstract text available
Text: PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features · · · · · · · · · NPN silicon , contained herein without notice. PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs , j8 .3 9.3 - j8 .9 2.8 7.3 - j6.7 9.0 - j8 .4 2.9 7.2 - j5.0 8.6 - j8 .0 2 , ) or information contained herein without notice. PH2729-65M Radar Pulsed Power Transistor 65W


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PDF PH2729-65M PH2729-65M
2007 - Not Available

Abstract: No abstract text available
Text: PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , -65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun , () 7.8 - j8 .3 7.3 - j6.7 7.2 - j5.0 ZOF () 9.3 - j8 .9 9.0 - j8 .4 8.6 - j8 .0 2 ADVANCED: Data , -65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions


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PDF PH2729-65M
2002 - SMD TRANSISTOR j8

Abstract: transistor SMD J9 transistor smd j6 smd transistor J6 transistor SMD wm j13 SMD Transistor transistor wm WM8762-EV1M WM8762EV1 SMD Transistor PNP 3pin
Text: from the WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of , 1 J7 J8 1 2 3 4 5 6 LNK1 H1 J10 1 3 5 7 9 11 1 2 4 6


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PDF WM8762 WM8762 24-bit, 192kHz WM8762. WM8762-EV1B WM8762-EV1M SMD TRANSISTOR j8 transistor SMD J9 transistor smd j6 smd transistor J6 transistor SMD wm j13 SMD Transistor transistor wm WM8762EV1 SMD Transistor PNP 3pin
2011 - 20 watts transistor s-band

Abstract: j948
Text: DESCRIPTION The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable , across the 3100 to 3500 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and , , 300 s, 10% 3100 - 3500 MHz Transistor Impedance Information Impedance Data Freq (GHz) 3.1 3.2 3.3 3.4 3.5 Zs 5.02 ­ j9.48 4.48 ­ j9.28 3.92 ­ j8 .98 3.42 ­ j8 .64 3.00 ­ j8 .28 Zl 5.04 ­ j4.88 4.56 ­ j5


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PDF 3135GN-170M 3135GN 55-QP 20 watts transistor s-band j948
2x4 RJ45 LED

Abstract: 810130 marking P12 transistor p11 marking J1
Text: P5 P8 TD4 J5 J7 TD4 J8 P7 P10 GND Shield P10 GND 1000pF/2KV J8 P7 , /1000 Gigabit Ethernet RJ45 2xN Port MECHANICAL : G29TS-610xx0A (2x1) Marking 28.07 4.26 3.18 , 10.80 15.49 (19.07) 17.27 Port 2 J8 J1 J1 J8 Port 1 Port 1 Port 2 P1 , : G29TS-710xx0A (2x4) Marking 28.07 0.15 G29TS-710130A Superworld 0601 4.26 3.18 3.56 , ) 59.18 Port 2 Port 8 J8 J1 J8 J1 J8 J1 J8 J1 J1 J8 J1 J8 J1


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PDF 1500Vrms IEEE802 M288027, M287944, file94219539 file11/274 file11/284 file11/304 TD1/2/3/97 2x4 RJ45 LED 810130 marking P12 transistor p11 marking J1
2007 - Not Available

Abstract: No abstract text available
Text: PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization , -11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty RF Test Fixture Impedance F (GHz) 3.10 3.25 3.40 ZIF () 17.5 - j8 .5 15.0 - j8 .2 13.0 - j8 .0 ZOF () 90 + j37 58 + j7.0 30 + j14.5 M


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PDF PH3134-11S
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