The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
SMBJ5347B-TP Micro Commercial Components Zener Diode, 10V V(Z), 5%, 5W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
SMBJ5345B-TP Micro Commercial Components Zener Diode, 8.7V V(Z), 5%, 5W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
SMBJ5348B-TP Micro Commercial Components Zener Diode, 11V V(Z), 5%, 5W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
SMBJ5346B-TP Micro Commercial Components Zener Diode, 9.1V V(Z), 5%, 5W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
SMBJ5341BE3/TR13 Microsemi Corporation Zener Diode, 6.2V V(Z), 5%, 1.38W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
SMBJ5341B/TR13 Microsemi Corporation Zener Diode, 6.2V V(Z), 5%, 1.38W, Silicon, Unidirectional, DO-214AA, PLASTIC, SMBJ, 2 PIN

J534-1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - diode marking 24

Abstract: S20VT60 S20VT80 diode marking code 20A marking 24 diode
Text: Mounting Torque Forward Voltage Reverse Current Thermal Resistance 168 J534-1 , have characterristic variation. Typical is a statistical average of the device's ability. J534-1 , diode 1mst10msTj = 25 per diode AC Terminals to Case, AC 1 minute 0.6 Nm Recommended torque


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PDF S20VT S20VT60 1mst10msTj J534-1 diode marking 24 S20VT80 diode marking code 20A marking 24 diode
2010 - S2VB* bridge

Abstract: S2VB60 S2VB bridge 2A 600v S2VB 20 40 MARKING CODE TL marking 6 bridge diode
Text: J534-1 VF IR jl Pulse measurement, per diode MAX 1.05 VR = VRM, Pulse measurement , average of the device's ability. J534-1 31 Shindengen Electric , , Resistance load, Without heatsink, Ta = 40 50Hz Tj = 25 50Hz sine wave , Non-repetitive 1 cycle peak value


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PDF S2VB60 25unless 1mst10msTj J534-1 S2VB* bridge S2VB60 S2VB bridge 2A 600v S2VB 20 40 MARKING CODE TL marking 6 bridge diode
2010 - LN6SB60

Abstract: No abstract text available
Text: ja 92 J534-1 Pulse measurement, per diode VR = VRM, Pulse measurement, per diode IF = , 's ability. J534-1 93 Shindengen Electric , sine wave, Non-repetitive 1 cycle peak value, Tj = 25 1mst10msTj=25 per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm Tc = 111 6.0 Ta = 25 2.8 A 170


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PDF LN6SB60 E142422 25unless J534-1 LN6SB60
2010 - D45X

Abstract: J534 D45XT80 SHINDENGEN DIODE D45Xt-80
Text: Thermal Resistance 184 J534-1 Type No. Symbol Conditions IR jc ja 50Hz 50Hz , statistical average of the device's ability. J534-1 185 Shindengen Electric , Terminals to case, AC 1 minute. Except topopposite side of the terminal sideof the mold case. 1.2 Nm


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PDF D45XT80 E142422 D45XT 1mst10ms J534-1 D45X J534 D45XT80 SHINDENGEN DIODE D45Xt-80
2010 - D20XBS6

Abstract: No abstract text available
Text: IR Cj jc Thermal Resistance jl ja 202 J534-1 Type No. 60 V 0.5msduty 1 /40 Pulse width 0.5ms, duty 1 /40 65 V Tc = 100 With heatsink 50Hz 50Hz sine wave , statistical average of the device's ability. J534-1 203 Shindengen Electric , , Tj = 25 10sTj = 25 Pulse width 10s, per diode, Tj = 25 20 AC Terminals to Case, AC 1 minute


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PDF D20XBS6 D20XBS6 J534-1
2010 - D25XB

Abstract: D25XB80 diode bridge 25A D25XB60
Text: 108 J534-1 Pulse measurement, per diode VR = VRM, Pulse measurement, per diode Junction , statistical average of the device's ability. J534-1 109 Shindengen Electric , per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm 800 25 V A , IF = 12.5A, MAX 1.05 MAX 10 MAX 1 MAX 5 MAX 22 V A /W Thin SIP


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PDF D25XB E142422 D25XB 25unless J534-1 D25XB80 diode bridge 25A D25XB60
2010 - S10WB60

Abstract: No abstract text available
Text: 46 J534-1 Pulse measurement, per diode VR = VRM, Pulse measurement, per diode Junction , statistical average of the device's ability. J534-1 47 Shindengen Electric , 25 per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm 10 A


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PDF S10WB60 PackageS10WB 25unless J534-1 S10WB60
2010 - d25x100

Abstract: d25xb10 D25XB D25XB100
Text: jc Thermal Resistance jl ja 110 J534-1 Pulse measurement, per diode VR = VRM , . Typical is a statistical average of the device's ability. J534-1 111 Shindengen Electric , = 25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 AC Terminals to Case, AC 1 minute , MAX 23 V A /W D25XB100 Thin SIP UL Bridge CHARACTERISTIC DIAGRAMS Tc=25 Tc=150 1 Average Rectified Forward Current IO A 0.1 0 0.5 1 1.5 Pulse measurement per


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PDF D25XB100 E142422 25unless J534-1 d25x100 d25xb10 D25XB D25XB100
E1424

Abstract: No abstract text available
Text: ãƒ‘ãƒ«ã‚¹æ¸¬å®šï¼Œï¼‘ç´ å­å½“ãŸã‚Šã®è¦æ ¼å€¤ Pulse measurement, per diode ¡  112 J534-1 10 , . J534-1 113 - , ‹¬ 子・ケース間,ACï¼‘åˆ†é–“å°åŠ Terminals to Case, AC 1 minute (推奨値:0.5 N・m) (Recommended torque : 0.5 N・mï


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PDF LL25XB60 E142422 J534-1 E1424
Not Available

Abstract: No abstract text available
Text: Current 逆回復時間 Reverse Recovery Time ¡  Thermal Resistance 24 J534-1 VF IR , average of the device’s ability. J534-1 25 -


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PDF LN1WBA60 J534-1
2010 - 600v 30a

Abstract: D30VC60
Text: Thermal Resistance 154 J534-1 Symbol Conditions Type No. D30VC60 Unit Tstg , 's ability. J534-1 155 Shindengen Electric , 0.8 Nm AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm Pulse


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PDF D30VC60 PackageD30VC St124 1mst10msTj J534-1 600v 30a D30VC60
2010 - s1nb

Abstract: S1NB60 45 S1NB60 029g S1NB60 15 S1NB80 800V1A marking code 68 diode smd marking BUF diode code 6_8
Text: Reverse Current Thermal Resistance 18 J534-1 VF IR jl ja Pulse measurement, per diode , 's ability. J534-1 19 Shindengen Electric , sine wave, Non-repetitive 1cycle peak value, Tj = 25 1mst10msTj = 25 per diode V 1 A 30


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PDF 25unless 1mst10msTj J534-1 s1nb S1NB60 45 S1NB60 029g S1NB60 15 S1NB80 800V1A marking code 68 diode smd marking BUF diode code 6_8
2010 - smd diode marking ja

Abstract: DIODE SMD CODE MARKING 35 SMD MARKING CODE 014n SMD MARKING CODE 102 SMD diode MARKING CODE 10 smd diode code ja 014N smd diode marking code ad 68 smd code S1NAD80
Text: It 2 Forward Voltage Reverse Current J534-1 -55150 VRM Peak Surge Forward , variation. Typical is a statistical average of the device's ability. J534-1 149 Shindengen , Junction to Lead, On glass-epoxy substrate * 1 Junction to Ambient, On glass-epoxy substrate A 110


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PDF S1NAD80 1101mm J534-1 smd diode marking ja DIODE SMD CODE MARKING 35 SMD MARKING CODE 014n SMD MARKING CODE 102 SMD diode MARKING CODE 10 smd diode code ja 014N smd diode marking code ad 68 smd code S1NAD80
2010 - DIODE S2v

Abstract: s2v60 DIODE S2V 3 S2V60 S2V20 semiconductor band color code
Text: Squared Time Forward Voltage Reverse Current Thermal Resistance 158 J534-1 Symbol , 's ability. J534-1 159 Shindengen Electric


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PDF PackageAX10 S2V60 S2V20 1mst10msTj J534-1 DIODE S2v s2v60 DIODE S2V 3 S2V60 S2V20 semiconductor band color code
2010 - diode smd marking code 76

Abstract: 2fv60 2FV 60 smd code marking JL mark 2fv diode smd diode marking Ja SMD DIODE MARKING 14 J534 smd DIODE marking code 24 D2F60
Text: Thermal Resistance 130 J534-1 Type No. Symbol Conditions D2F60 Unit Tstg , variation. Typical is a statistical average of the device's ability. J534-1 131 Shindengen


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PDF D2F60 J534-1 diode smd marking code 76 2fv60 2FV 60 smd code marking JL mark 2fv diode smd diode marking Ja SMD DIODE MARKING 14 J534 smd DIODE marking code 24 D2F60
2010 - smd diode marking 1A

Abstract: diode smd marking 1A m1f60 smd marking 1A M1F80
Text: Resistance 120 J534-1 Symbol Conditions Type No. M1F60 M1F80 Unit Tstg , variation. Typical is a statistical average of the device's ability. J534-1 121 Shindengen


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PDF J534-1 M1F60 M1F80 smd diode marking 1A diode smd marking 1A m1f60 smd marking 1A M1F80
2010 - SMD MARKING CODE 103

Abstract: smd diode marking JC SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD DIODE MARKING 14 SMD MARKING CODE 39 diode smd marking BUF smd diode marking ja
Text: V IO IFSM VF IR jl ja jc 132 J534-1 Type No. Symbol Conditions 50Hz , 's ability. J534-1 133 Shindengen Electric


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PDF M1FE40 J534-1 SMD MARKING CODE 103 smd diode marking JC SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD DIODE MARKING 14 SMD MARKING CODE 39 diode smd marking BUF smd diode marking ja
2010 - D4SB S4

Abstract: DIODE marking S4 45 DIODE marking S4 05 DIODE d4sb
Text: Resistance jl ja 188 J534-1 Type No. Symbol Conditions 0.5ms, duty 1 /40 Pulse width 0.5ms, duty 1 /40 50Hz 50Hz sine wave, Resistance load With heatsink Without heatsink 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj = 25 10s, Tj = 25 Pulse width 10s, per diode, Tj = 25 AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm Pulse , . Typical is a statistical average of the device's ability. J534-1 189 Shindengen Electric


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PDF J534-1 D4SB S4 DIODE marking S4 45 DIODE marking S4 05 DIODE d4sb
2010 - l15x60h

Abstract: l15x60 LN15XB60H
Text: 23 jc Thermal Resistance 64 J534-1 IF = 0.1A, IR = 0.1A, V /W Thin SIP , statistical average of the device's ability. J534-1 65 Shindengen Electric , Without heatsink Ta = 28 3.3 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj = 25 1mst10msTj = 25 per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque


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PDF LN15XB60H L15X60H 25unless J534-1 l15x60h l15x60 LN15XB60H
2010 - D4SBN20

Abstract: No abstract text available
Text: D4SBN20 Unit Tstg -55150 Tj 150 200 V VRM IO IFSM Vdis TOR J534-1 1 Pulse measurement, per diode 1 Pulse measurement, per diode IR VR = 200V, Cj 1 , statistical average of the device's ability. J534-1 193 Shindengen Electric , ambient jl 4.0 A 2.2 60 A 2.0 kV 0.8 AC Terminals to Case, AC 1 minute 0.5


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PDF D4SBN20 J534-1 D4SBN20
2010 - S1NBB80

Abstract: s1nbb 800V1A marking 6 bridge diode
Text: substrate, copper soldering 20 J534-1 A MAX 1.05 MAX 10 MAX 15 * 1 MAX 68 , have characterristic variation. Typical is a statistical average of the device's ability. J534-1 , IFSM It 2 50Hz 50Hz sine wave, Resistance load Ta26 * 1 1 Ta25 *2 0.84 50Hz Tj =


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PDF S1NBB80 25unless 1324mm 324mm2 2101mm2 101mm2 J534-1 S1NBB80 s1nbb 800V1A marking 6 bridge diode
Not Available

Abstract: No abstract text available
Text: Current ¡  Thermal Resistance 180 J534-1 S30VTA160 単位 Unit Tstg â , . J534-1 181 - , ‹¬ 子・ケース間,ACï¼‘åˆ†é–“å°åŠ Terminals to Case, AC 1 minute (推奨値:0.6 N・m) (Recommended torque : 0.6 N・m


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PDF S30VTA160 S30VTA160 J534-1
2010 - a6080

Abstract: S1WB(A)60B S1wB s s1wb
Text: J534-1 jl ja Pulse measurement, per diode VR =VRM, Pulse measurement, per diode IF = , 's ability. J534-1 23 Shindengen Electric , 600 V A 1 30 50 A 4.5 16 A2s Electrical Characteristics Tl = 25unless


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PDF 25unless J534-1 layer35 a6080 S1WB(A)60B S1wB s s1wb
2010 - D15XB80

Abstract: D15XB D15XB60 D15XB60 symbol d15xb80 datasheet
Text: Ambient, Without heatsink jc Thermal Resistance jl ja 98 J534-1 , Pulse measurement , . Typical is a statistical average of the device's ability. J534-1 99 Shindengen Electric , per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm 800 15 V A


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PDF D15XB E142422 D15XB 25unless J534-1 D15XB80 D15XB60 D15XB60 symbol d15xb80 datasheet
2010 - S25VB

Abstract: S25VB60 S25VB80
Text: Forward Voltage Reverse Current Thermal Resistance 40 J534-1 VF IR jc Pulse , generally have characterristic variation. Typical is a statistical average of the device's ability. J534-1 , AC Terminals to Case, AC 1 minute Nm Recommended torque : 1 Nm 800 25 V A 6 400 A


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PDF S25VB PackageS25VB 25unless J534-1 S25VB S25VB60 S25VB80
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