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2SJ211-T1B-A Renesas Electronics Corporation Chip1Stop 400 $1.76 $1.64
35J-2117T Lighting Components & Design Inc Master Electronics 1 - -
ACJ2112 Panasonic Electronic Components Avnet 5,000 $7.16 $5.97
ACJ2112M02 Panasonic Electronic Components ComS.I.T. 1,633 - -
ACJ2112M04 Panasonic Electronic Components Bristol Electronics 1,600 - -
ACJ2112P Panasonic Electronic Components Master Electronics 33 $5.00 $2.89
ADJ21112 Panasonic Electronic Components Master Electronics 50 $12.08 $7.74
EJ2117-000 TE Connectivity Ltd Sager - - -
G3J-211BL AC100-240 OMRON Industrial Automation Heilind Electronics - - -
G3J-211BL DC12-24 OMRON Industrial Automation Heilind Electronics - - -
G3J-211BL-2 AC100-240 OMRON Industrial Automation Heilind Electronics - - -
G3J211BL2AC100240NC OMRON Corporation Power and Signal Group - - -
G3J211BLAC100240 OMRON Corporation Power and Signal Group - - -
G3J211BLDC1224NC OMRON Corporation Power and Signal Group - - -
GSB311J211C2EU Amphenol Commercial Heilind Electronics - Europe - - -
GSB311J211C2EU Amphenol Commercial Interstate Connecting Components - - -
GSB311J211C2EU Amphenol Commercial Heilind Electronics - - -
J211 Vishay Siliconix Bristol Electronics 271 - -
J211 Calogic Inc Karl Kruse GmbH & Co KG 5,000 - -
J211-LF Calogic Inc Karl Kruse GmbH & Co KG 5,000 - -
J211-TO-92 Linear Integrated Systems NAC 500 $2.20 $2.20
LNJ211R8TRA Panasonic Electronic Components New Advantage Corporation 1,262 - -
MJ21193G ON Semiconductor Future Electronics 25 $4.22 $3.24
MJ21193G ON Semiconductor Wuhan P&S 1,750 $5.69 $3.25
MJ21193G ON Semiconductor Newark element14 427 $5.56 $3.89
MJ21193G ON Semiconductor element14 Asia-Pacific 102 $6.82 $4.76
MJ21193G ON Semiconductor Avnet 105 $5.67 $2.95
MJ21193G ON Semiconductor Newark element14 92 $5.56 $3.89
MJ21193G ON Semiconductor Rochester Electronics 9,869 $4.22 $3.43
MJ21193G ON Semiconductor Farnell element14 123 £4.28 £2.68
MJ21194G ON Semiconductor Chip1Stop 30 $6.68 $4.49
MJ21194G ON Semiconductor Future Electronics - $4.29 $3.03
MJ21194G ON Semiconductor TME Electronic Components 58 $6.59 $4.17
MJ21194G ON Semiconductor Chip1Stop 35 $4.96 $4.40
MJ21194G ON Semiconductor Chip1Stop 47 $4.96 $4.40
MJ21194G ON Semiconductor Newark element14 97 $5.56 $3.49
MJ21194G ON Semiconductor Farnell element14 258 £4.28 £2.68
MJ21194G ON Semiconductor element14 Asia-Pacific 137 $6.82 $3.43
MJ21194G ON Semiconductor Allied Electronics & Automation - $5.87 $4.99
MJ21194G ON Semiconductor Wuhan P&S 1,850 $5.69 $3.25
MJ21194G ON Semiconductor Rochester Electronics 992 $4.22 $3.43
MJ21195G ON Semiconductor Future Electronics - $2.34 $1.95
MJ21195G ON Semiconductor Schukat electronic 380 €2.64 €1.96
MJ21195G ON Semiconductor Rochester Electronics 18,933 $3.04 $2.47
MJ21195G ON Semiconductor Bristol Electronics 6 - -
MJ21196G ON Semiconductor Rochester Electronics 45,428 $3.04 $2.47
MJ21196G ON Semiconductor Wuhan P&S 20 $2.94 $2.10
MJ21196G ON Semiconductor Schukat electronic 530 €2.71 €2.03
MJ21196G ON Semiconductor Avnet - $4.01 $2.51
MJ21196G ON Semiconductor ComS.I.T. 84 - -
MJ21196G ON Semiconductor Bristol Electronics 6 - -
MJ21196G ON Semiconductor Future Electronics - $2.71 $1.89
MMBFJ211 ON Semiconductor TME Electronic Components 1,441 $0.18 $0.11
MMBFJ211 ON Semiconductor Avnet 9,000 $0.17 $0.14
NJ 2-11-N-G PEPPERL+FUCHS GmbH Newark element14 3 $32.43 $32.43
NJ2-11-N PEPPERL+FUCHS GmbH Allied Electronics & Automation 4 $81.74 $81.74
NJ2-11-N-G 15M PEPPERL+FUCHS GmbH Allied Electronics & Automation - $146.49 $140.03
NJ2-11-SN-G 10M PEPPERL+FUCHS GmbH Allied Electronics & Automation - $179.40 $179.40
OJ-211 Aleph America Corporation Master Electronics 682 $4.16 $3.17
SSTJ211 Calogic Inc Karl Kruse GmbH & Co KG 5,000 - -
SSTJ211-E3 Vishay Intertechnologies Farnell element14 - £0.72 £0.72
SSTJ211-E3 Vishay Intertechnologies element14 Asia-Pacific - $1.06 $1.06
SSTJ211-LF Calogic Inc Karl Kruse GmbH & Co KG 2,500 - -
T5-CJ2112 OTTO Engineering Inc Sager - $87.86 $67.33
T5-MJ2118 OTTO Engineering Inc Sager - $150.78 $121.46
T8-CJ2112 OTTO Engineering Inc Sager - $123.00 $94.25
TMJ21195 Continental Device India Ltd Schukat electronic - €2.60 €1.98
TMJ21196 Continental Device India Ltd Schukat electronic - €2.66 €1.98
WJ2110-440-SS W.J. Roberts Co Inc Bisco Industries 133 - -
WJ2110-632-A-0 W.J. Roberts Co Inc Bisco Industries 45 - -
WJ2114-832-A-0 W.J. Roberts Co Inc Bisco Industries 205 - -
WJ2116-1032-AL-0 W.J. Roberts Co Inc Bisco Industries 95 - -

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J211 datasheet (27)

Part Manufacturer Description Type PDF
J211 Calogic N-Channel JFET Original PDF
J211 Fairchild Semiconductor N-Channel RF Amplifier Original PDF
J211 InterFET N-Channel silicon junction field-effect transistor Original PDF
J211 Linear Integrated Systems LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Original PDF
J211 Philips Semiconductors N-channel field-effect transistors Original PDF
J211 Siliconix N-Channel JFETs Original PDF
J211 Vishay TRANS JFET N-CH 20MA 3TO-226AA Original PDF
J211 Others Shortform Transistor PDF Datasheet Scan PDF
J211 Others Basic Transistor and Cross Reference Specification Scan PDF
J211 Others Shortform Transistor PDF Datasheet Scan PDF
J211 Others Shortform Datasheet & Cross References Data Scan PDF
J211 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
J211 Others Semiconductor Master Cross Reference Guide Scan PDF
J211 National Semiconductor N-Channel JFETs Scan PDF
J211 National Semiconductor N-Channel JFETs Scan PDF
J211 National Semiconductor JFET General Purpose Scan PDF
J211 National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
J211 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
J211 Siliconix PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan PDF
J211 Siliconix FET Design Catalogue 1979 Scan PDF

J211 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - J211

Abstract: 62w sot-23 N-Channel RF Amplifier J212 rf amplifier
Text: °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J211-212 350 2.8 125 357 , J211 / J212 / MMBFJ211 / MMBFJ212 J211 J212 MMBFJ211 MMBFJ212 G G S TO-92 D S , " X 0.06." ã1997 Fairchild Semiconductor Corporation 5-25 J211 / J212 / MMBFJ211 / MMBFJ212 , Interactions Common Drain-Source 5-26 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , Current Output Conductance vs. Drain Current 5-27 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF


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PDF MMBFJ211 MMBFJ212 OT-23 J211 62w sot-23 N-Channel RF Amplifier J212 rf amplifier
J211

Abstract: 41B SOT23
Text: J211 / J212 / MMBFJ211 /MMBFJ212 National S e m i c o n d u c t o r " Discrete POWER & Signal Technologies J211 J2 1 2 M M B F J 2 1 1 M M B F J 2 1 2 SOT-23 M ark: 6 2W / 6 2 X , , Junction to Case Thermal Resistance, Junction to Ambient J211 /J212 625 5.0 83.3 200 Max ` MMBFJ211 350 , OOHORHB Ö7G 7-22 J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel General Purpose Amplifier , ds = 15 V, Id = 1.0 nA J211 J212 -25 -100 -2.5 -4.0 -4.5 -6.0 V pA V V ON CHARACTERISTICS


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PDF MMBFJ211 /MMBFJ212 OT-23 S01130 MMBFJ212 bSD113D J211 41B SOT23
2011 - J211 jfet siliconix

Abstract: J211
Text: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 The J211 is a n-channel , REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW , Low Leakage Maximum Power Dissipation Low Noise Continuous Power Dissipation 360mW J211 , to Source Voltage 25V J211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL , rDS(on) Drain to Source On Resistance 50 IG = 1mA, VDS = 0V J211 DYNAMIC


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PDF OT-23 100pA 360mW J211 jfet siliconix J211
2011 - J211 jfet siliconix

Abstract: No abstract text available
Text: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 The J211 is a n-channel , REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW , Low Leakage Maximum Power Dissipation Low Noise Continuous Power Dissipation 360mW J211 , to Source Voltage 25V J211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL , rDS(on) Drain to Source On Resistance 50 IG = 1mA, VDS = 0V J211 DYNAMIC


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PDF 100pA 360mW J211 jfet siliconix
1997 - j211

Abstract: No abstract text available
Text: +150 °C J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 MMBFJ210 MMBFJ211 MMBFJ212 J210 J211 J212 *These ratings are limiting values above which the serviceability of any , mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation J210/ J211 /J212/MMBFJ210/ J211 /J212, Rev A 5 (continued) Electrical Characteristics Symbol TA = 25° unless , Parameter Interactions Common Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212


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PDF OT-23 MMBFJ210 MMBFJ211 MMBFJ212 MMBFJ210 MMBFJ211 J21lopment. j211
1997 - J210

Abstract: J211 J212 MMBFJ212 MIXER MARK 210 transistor j210 MMBFJ210 MMBFJ211
Text: +150 °C J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 MMBFJ210 MMBFJ211 MMBFJ212 J210 J211 J212 *These ratings are limiting values above which the serviceability of any , 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J210/ J211 /J212/MMBFJ210/ J211 /J212, Rev A , Drain-Source J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued , Current vs. Voltage Noise Voltage vs. Frequency J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212


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PDF OT-23 MMBFJ210 MMBFJ211 MMBFJ212 MMBFJ210 MMBFJ211 J210 J211 J212 MMBFJ212 MIXER MARK 210 transistor j210
1997 - transistor j210

Abstract: J210 J211 J212 marking J212
Text: -92 (SOT54) package. s MAM197 CAUTION Marking codes: J210: J210. J211 : J211. J212: J212 , 25 °C. 4 6 8 10 VDS (V) J211. Tj = 25 °C. Fig.6 Input characteristics; typical , -800 mV -1 V -1.2 V -1.4 V 16 12 8 8 4 0 -6 -4 -2 0 VGS (V) 0 0 J211. , DISCRETE SEMICONDUCTORS DATA SHEET J210; J211 ; J212 N-channel field-effect transistors , Product specification N-channel field-effect transistors J210; J211 ; J212 FEATURES PINNING -


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PDF SCA56 117067/00/01/pp12 transistor j210 J210 J211 J212 marking J212
1997 - low igss

Abstract: J212 J211 J210 transistor j210 J210 equivalent
Text: J210, J211 , J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM ( J211 , J212) TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @ 25 , CHARACTERISTICS J210 J211 MIN TYP MAX MIN TYP MAX J212 UNITS CONDITIONS MIN TYP MAX -100 pA VDS


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PDF 100pA 360mW low igss J212 J211 J210 transistor j210 J210 equivalent
JFs sot-23

Abstract: J212 J212 we J211 MMBFJ211 MMBFJ212 T092
Text: Semiconductor" J211 J212 TO-92 MMBFJ211 MMBFJ212 SOT-23 Mark: 62W/62X N-Channel General Purpose Amplifier , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J211 / J212 'MMBFJ211 Pd , 15 V, VDS = 0 - 100 pA Vgs(oH) Gate-Source Cutoff Voltage Vds = 15 V, Id = 1.0 nA J211 J212 -2.5 - , 0 J211 J212 7.0 15 20 40 mA mA SMALL SIGNAL CHARACTERISTICS {Jfs Common Source Forward Transconductance Vos = 15 V, VQs = 0, f = 1.0 kHz J211 J212 6000 7000 12,000 12,000 Hmhos umhos 9oss Common Source


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PDF MMBFJ211 MMBFJ212 OT-23 2W/62X JFs sot-23 J212 J212 we J211 MMBFJ212 T092
1997 - transistor j210

Abstract: 212 t sot-23
Text: J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 , mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J210/ J211 /J212/MMBFJ210/ J211 /J212, Rev A J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , Width 300 µS Typical Characteristics Parameter Interactions Common Drain-Source J210 / J211 , J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical


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PDF MMBFJ210 MMBFJ211 MMBFJ212 OT-23 transistor j210 212 t sot-23
2012 - Not Available

Abstract: No abstract text available
Text: J210, J211 , J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM ( J211 , J212) IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL G HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 D Plastic ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @25°C Ambient (Derate 3.27 mW/°C) Operating Temperature Range -25V 10mA 360mW -55 to +150 °C S G D S J210, J211


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PDF SSTJ210, SSTJ211, SSTJ212 100pA 360mW OT-23 SSTJ210
2014 - Not Available

Abstract: No abstract text available
Text: J210, J211 , J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM ( J211 , J212) HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS G D S @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate , -92 10mA SOT-23 TOP VIEW J210, J211 , J212 -25V TOP VIEW SSTJ210, SSTJ211, SSTJ212 360mW


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PDF SSTJ210, SSTJ211, SSTJ212 100pA OT-23 360mW SSTJ210
2010 - VNC2

Abstract: No abstract text available
Text: -10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V input , -12 IO10 I/O J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master , -9, J2-12 uart_rts# Output Request To Send Control Output J2-6, J1-10, J2-11 uart_cts , been transmitted J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 uart_tx_active Description , master to slave Output spi_s1_miso spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out


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PDF V2DIP2-32 VNC2-32Q V2DIP2-32 VNCL2-32Q VNC2
Siliconix Dual N-Channel JFETs

Abstract: J210 211 siliconix
Text: Tem ic Siliconix J210/211/212 N-Channel JFETs Product Summary P a rt N um ber J210 J211 J212 Vg s (oK) (V) - 1 to - 3 -2.5 to -4.5 - 4 to - 6 V(BR)GSS ^ ' ,l ^ -25 -2 5 -2 5 ; gfcM in (m S) 'I 4 6 7 I dss Mi® (mA) 2 7 15 J211 , For applications information seeAN104, page 12-21. Features · Excellent High Frequency Gain: J211 /212, G ps 12 dB (typ) @ 400 M Hz · Very Low Noise: 3 dB , in M ax J211 M in :/ G ate-Source B reakdow n Voltage G ate-S ource C u to ff Voltage Satu ratio n D


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PDF J210/211/212 seeAN104, J211/212, P-37404-- P-37404--Rev. Siliconix Dual N-Channel JFETs J210 211 siliconix
Not Available

Abstract: No abstract text available
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J212 PRODUCT SUM M ARY Part Number J2 1 0 J/S S T J211 J /S S T J 2 1 2 SSTJ211 SSTJ212 VGS(off) - 1 to - 3 (V) V (BH , .5 - 4 to -6 FEATURES · Excellent High Frequency Gain: J211 /212, Gps 12 dB (typ) @ 400 MHz · , -236 (SOT-23) S STJ211 (Z 1)* S S T J 2 1 2 (Z 2 )* J2 1 0 J211 J212 T op V ie w Top V ie w ·M a rk in g , ISE NOTED) Limits J210 J/S S T J211 J /S S T J 2 1 2 Parameter Static G a te -S o u rc e B re a


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PDF J/SSTJ210 SSTJ211 SSTJ212 J211/212, S-04028--Rev. 04-Jun-01 S-04028--
Not Available

Abstract: No abstract text available
Text: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 360 mW Power Derating J211 J210 At 25°C free air temperature: Min , (972) 487-1287 i F A X (972) 276-3375 Surface Mount - SMP J210, SMP J211 MÛHbflfiô 3 0 0 0 7 7


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PDF NJ26L T0-226AA
1997 - 212 s sot-23

Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 transistor mark igf MMBFJ211 MMBFJ212 PN2222N
Text: Fairchild Semiconductor Corporation J211-212 350 2.8 125 *MMBFJ211-212 225 1.8 357 556 , J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO , Characteristics Parameter Interactions Common Drain-Source J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel , Transfer Characteristics Leakage Current vs. Voltage J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel , Transadmittance Reverse Transadmittance J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier


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PDF MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 transistor mark igf MMBFJ212 PN2222N
2010 - VNC2-32

Abstract: V2DIP2-32 VNCL2-32Q
Text: bit bit bit bit bit 2 1 0 11 10 J1-4 J1-5 J2-6 J2-7 J2-8 J2-9 J2-10 J2-11 J2-12 IOBUS3 GND , -10 J1-11 J1-12 J2-12 J2-11 IO0 IO4 IO5 IO6 IO7 IO8 IO9 IO10 IO11 I/O I/O I/O I/O I/O I/O I/O I/O I , Description J2-10, J1-6, J1-11 J2-9, J1-8, J1-12 J2-8, J1-9, J2-12 J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 J2-9, J1-8, J1-12 J2-8, J1-9, J2-12 J2-6, J1-10, J2-11 uart_txd uart_rxd uart_rts# uart_cts# uart_dtr , spi_s0_ss# Input J2-6, J1-10, J2-11 Slave chip select spi_s1_ss# Table 3.4 - Data and Control Bus


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PDF V2DIP2-32 VNC2-32Q VNCL2-32Q 895-V2DIP2-32 V2DIP2-32 VNC2-32
2010 - V2DIP2-32

Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Text: -9 J2-10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V , -12 IO10 I/O J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master , -9, J2-12 uart_rts# Output Request To Send Control Output J2-6, J1-10, J2-11 uart_cts , been transmitted J2-6, J1-10, J2-11 J2-10, J1-6, J1-11 uart_tx_active Description , master to slave Output spi_s1_miso spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out


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PDF V2DIP2-32 VNC2-32Q V2DIP2-32 VNCL2-32Q usb flash drive circuit diagram Vdip1 VNC2-32
Not Available

Abstract: No abstract text available
Text: LINEAR SYSTEMS Linear Integrated Systems J210. J211. J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM ( J211 , J212) HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation 25 , CHARACTERISTICS @ 25°C (unless otherwise noted) SYM BO L I CHARACTERISTICS 1 J210 1 J211 1 J212 i w i ra ra r r c


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PDF 100pA 360mW
Not Available

Abstract: No abstract text available
Text: LINEAR SYSTEMS Linear Integrated Systems J210. J211. J212 LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER FEATURES HIGH GAIN = 7000^mho MINIMUM ( J211 , J212) HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C| 8 8 = 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @ 25°C Ambient , prcsaiw i wm - J210 - I J211 - 1 -100 -4.5 - h i raa -4 -25 15 - J2 12 I U N


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PDF 100pA 360mW LISIS00075
2010 - V2DA

Abstract: VDIP1
Text: ) J2-5 (20) J2-6 (19) J2-7 (18) J2-8 (17) J2-9 (16) J2-10 (15) J2-11 (14) J2-12 (13) IOBUS18 IO18 I/O , -6 J1-8 J1-9 J1-10 J1-11 J1-12 J2-12 J2-11 J2-10 IOBUS0 IOBUS5 IOBUS6 IOBUS12 IOBUS13 IOBUS14 IOBUS15 , -8, J1-12, J2-9 J1-3, J1-9, J2-12, J2-8 J1-10, J2-11 , J2-6 J1-6, J1-11, J2-5, J2-10 uart_txd uart_rxd , Request (Data Set Ready Control) Input J1-3, J1-9, J2-12, J2-8 J1-10, J2-11 , J2-6 uart_dcd# uart_ri , spi_s1_miso Output Master In Slave Out Synchronous data from slave to master J1-10, J2-11 , J2


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PDF V2DIP1-48 VNC2-48 895-V2DIP1-48 V2DIP1-48 V2DA VDIP1
1999 - transistor j210

Abstract: J210 J211 SMPJ210 SMPJ211
Text: Databook.fxp 1/13/99 2:09 PM Page B-56 B-56 01/99 J210, J211 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J210 At 25°C free air temperature: Static Electrical , IG Gate Source Cutoff Voltage J211 ­ 25 V 10 mA 360 mW 3.27 mW/°C ­ 10 ­ 10 Test


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PDF NJ26L 226AA SMPJ210, SMPJ211 transistor j210 J210 J211 SMPJ210 SMPJ211
2010 - IO24

Abstract: VNC2-48 Vinculum II
Text: (15) J2-11 IOBUS19 IO19 (14) J2-12 (13) IOBUS18 IO18 Table 3.1 - Pin Signal , -12 IOBUS18 IO18 I/O uart_dcd# NA NA NA NA J2-11 IOBUS19 IO19 I/O uart_ri , Control Output J1-10, J2-11 , J2-6 uart_cts# Input Clear To Send Control Input J1-6, J1 , Set Ready Control) Input J1-3, J1-9, J2-12, J2-8 J1-10, J2-11 , J2-6 uart_dcd# Input , Synchronous data from master to slave Output spi_s1_miso J1-10, J2-11 , J2-6 spi_s0_ss# Master In


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PDF V2DIP1-48 VNC2-48 V2DIP1-48 IO24 Vinculum II
2010 - Not Available

Abstract: No abstract text available
Text: -10 J2-11 J2-12 Description 5.0V module supply pin. This pin can be used to provide the 5.0V input , J2-11 IO11 I/O UART Interface SPI Slave Interface SPI Master Interface Parallel , Control Output J2-6, J1-10, J2-11 uart_cts# Input J2-10, J1-6, J1-11 uart_dtr# Output , bit time after the last bit of a data frame has been transmitted J2-6, J1-10, J2-11 J2-10, J1 , spi_s0_ss# J2-6, J1-10, J2-11 Master In Slave Out Synchronous data from slave to master Input


Original
PDF V2DIP1-32 VNC2-32Q V2DIP1-32
Supplyframe Tracking Pixel