The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
UDT020A0X3-SRZ GE Critical Power CONV DIGITAL 5.5V 20A POL SMD
APXS003A0X-SRDZ GE Critical Power CONVER DC/DC 0.59 5.5V @ 3A SMD
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR

J122 SMD TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
j123

Abstract: No abstract text available
Text: . Pin Number Signal J122 GEN_FPGA[0:11] J123 GEN_FPGA[24:35] J124 GEN_FPGA[12:23 , Switch Device LED GEN_FPGA_PIN0 PB34C BA22 J122 1 2 3 GEN_FPGA_PIN1 PB34D BB22 J122 4 5 6 GEN_FPGA_PIN2 PB35A AW22 J122 7 8 9 GEN_FPGA_PIN3 PB35B AY22 J122 10 11 12 GEN_FPGA_PIN4 PB35C BD21 J122 13 14 15 GEN_FPGA_PIN5 PB35D BC21 J122 16 17 18 GEN_FPGA_PIN6 PB36C BD20


Original
PDF ebug06 E5379A 16-bit 165-BGA 1-800-LATTICE j123
2005 - J122 SMD TRANSISTOR

Abstract: 74c906 u3g diode Diode BAT41 J122 SMD SMD Tantalum code capacitor color J120 SMD IC 74C906 smd transistor wr smb schottky diode s4
Text: Transistor BC807-40LT1 PNP SMT Transistor 2.2 k/1% SMD Resistor 2.2 k/1% SMD Resistor 2.2 k/1% SMD Resistor , ADG714 D5 14 13 S5 U5­E J1­18 J1­19 J1­20 J1­21 J1­22 J1­23 J1­24 SCLK DIN DOUT 12 74C906 , SMD Tantalum Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 47 µF/10 V SMD Tantalum Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 47 µF/10 V SMD Tantalum Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 100 nF/50 V X7R SMD


Original
PDF 10-Bit EVAL-AD7816/7/8EB AD7818) AD7817) AD7816 AD7816/AD7817/AD7818 EVAL-AD7816/7/8EB EB04586 J122 SMD TRANSISTOR 74c906 u3g diode Diode BAT41 J122 SMD SMD Tantalum code capacitor color J120 SMD IC 74C906 smd transistor wr smb schottky diode s4
2013 - transistor C 2615

Abstract: No abstract text available
Text: , class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band , 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz Transistor Impedance Information Note , j1.22 1.4 2.8 + j0.025 3.09 + j0.781 Please call the representative for detailed circuit


Original
PDF 1214GN-180LV 55-KR 1214GN-180LV transistor C 2615
2003 - GPI102

Abstract: Bargraph IC 512 j122 AD7877 bargraph LCD CY7C68013 variable resistor 2.2k J124 4738C GPI104
Text: OPTIONAL R-C J2-1 J12-2 J2-2 J12-4 J2-3 J2-4 J12-1 J12-3 Figure 1. AD7877 Evaluation , connector. Connections are as follows: X+ to J12-1, X­ to J12-2 , Y+ to J12-3, and Y­ to J12-4. J11 , C5 0.1F J12-2 J2-1 C1 0.1F J7 3.3V NC = NO CONNECT J6 2 R1 C10 10F , CAP+ CAP CAP CAP+ CAP+ LED CON/POWER SMB CON-SIP-4P_ SMD USB JUMPER2\SIP3 VRES RES RES , Electrolytic ( SMD B Size) 0.1 µF Multilayer Ceramic (603) 22 pF Multilayer Ceramic (603) 2.2 µF 16 V


Original
PDF AD7877 EVAL-AD7877* AD7877 ADP3303 C04553 GPI102 Bargraph IC 512 j122 bargraph LCD CY7C68013 variable resistor 2.2k J124 4738C GPI104
2009 - J122 transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
Text: PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features · · · · · · · · · NPN silicon , contained herein without notice. PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs , Fre q (GHz) RF Test Fixture Impedance F (GHz) ZIF () ZOF () 2.7 6.9 - j12.2 4.5 - , information contained herein without notice. PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz


Original
PDF PH2731-75L J122 transistor RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
2013 - J122 SMD

Abstract: J122 SMD TRANSISTOR
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 4 - 15 April 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , Semiconductors BLF8G27LS-100P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , BLF8G27LS-100P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per , 2600 2700 [1] ZS and ZL defined in Figure 1. ZS[1] () 7.4 j12.2 8 j12.1 11 j16.9 ZL[1] () 5


Original
PDF BLF8G27LS-100P J122 SMD J122 SMD TRANSISTOR
2013 - Not Available

Abstract: No abstract text available
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 3 - 18 March 2013 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , Semiconductors BLF8G27LS-100P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , BLF8G27LS-100P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per , 2600 2700 [1] ZS and ZL defined in Figure 1. ZS[1] () 7.4 j12.2 8 j12.1 11 j16.9 ZL[1] () 5


Original
PDF BLF8G27LS-100P
2012 - J122 SMD TRANSISTOR

Abstract: No abstract text available
Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 - 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , BLF6G22LS-40BN Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4, 5 6, 7 Pinning , BLF6G22LS-40BN Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 C per section , Rev. 1 - 28 June 2012 3 of 13 NXP Semiconductors BLF6G22LS-40BN Power LDMOS transistor


Original
PDF BLF6G22LS-40BN J122 SMD TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at , Semiconductors Power LDMOS transistor 1.3 Applications ̈ RF power amplifiers for W-CDMA base stations and , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per , 0.25 - Ω IDq quiescent drain current main transistor : 310 345 380 mA VDS


Original
PDF BLF6G22L-40BN
2010 - J122 SMD TRANSISTOR

Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 - 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , Hazardous Substances (RoHS) BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor 1.3 , rights reserved. 2 of 13 BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor 6 , transistor : 310 345 380 mA VDS = 28 V sense transistor : IDS = 7.43mA; VDS = 26.7 V 7


Original
PDF BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN
2012 - Not Available

Abstract: No abstract text available
Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , frequency range BLF6G22LS-40BN NXP Semiconductors Power LDMOS transistor 2. Pinning information , Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 C per section , Semiconductors Power LDMOS transistor 8.2 2-Carrier W-CDMA with 5 MHz carrier spacing 001aam457 20 Gp


Original
PDF BLF6G22LS-40BN
2013 - Not Available

Abstract: No abstract text available
Text: , COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 600 Watts of , Application – 0912GN-600 is a general purpose power transistor that can be used for any of the following , 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215MHz TRANSISTOR IMPEDANCE , . Impedance Data Freq (GHz) Zs Zl 0.96 0.84 - j1.48 1.63 - j1.22 1.09 0.79 - j0


Original
PDF 0912GN-600 55-KR 0912GN-600
2010 - POWER TRANSISTOR

Abstract: BLA6H0912-500
Text: avionics radar power transistor 10. Abbreviations Table 10. Acronym DME ELM JTIDS LDMOS Mode-S RF SMD , BLA6H0912-500 LDMOS avionics radar power transistor Rev. 02 - 2 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz , 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 6


Original
PDF BLA6H0912-500 BLA6H0912-500 POWER TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , avionics radar power transistor 1.3 Applications ̈ A-band power amplifiers for radar applications in , -500 NXP Semiconductors LDMOS avionics radar power transistor 6. Characteristics Table 6. DC , radar power transistor 7. Application information 7.1 Impedance information Table 8. Typical


Original
PDF BLA6H0912-500 BLA6H0912-500
2010 - BLA6H0912

Abstract: power amplifier NXP 800B 1030 mhz power tr unit j122 transistor j147 1140MHz J122 SMD TRANSISTOR
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 - 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , (RoHS) BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6 , Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information


Original
PDF BLA6H0912-500 BLA6H0912-500 BLA6H0912 power amplifier NXP 800B 1030 mhz power tr unit j122 transistor j147 1140MHz J122 SMD TRANSISTOR
2010 - J122 SMD TRANSISTOR

Abstract: 800B MHz-2 BLA6H0912-500
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 03 - 30 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , (RoHS) BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6 , Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information


Original
PDF BLA6H0912-500 BLA6H0912-500 J122 SMD TRANSISTOR 800B MHz-2
MRF10350

Abstract: motorola rf Power Transistor 1685 transistor motorola J122
Text: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025­1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode­S transmitters. · Guaranteed Performance @ 1090 MHz Output Power = , TRANSISTOR NPN SILICON · 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR · Hermetically , 3.55 + j3.02 1.94 + j1.13 1125 4.11 + j2.27 1.80 + j1.22 1150 4.13 + j1.35 1.71 +


Original
PDF MRF10350/D MRF10350 MRF10350/D* MRF10350 motorola rf Power Transistor 1685 transistor motorola J122
1996 - motorola J122

Abstract: MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
Text: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 ­ 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode­S transmitters. · Guaranteed Performance @ 1090 MHz Output Power = , TRANSISTOR NPN SILICON · 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR · Hermetically , 3.55 + j3.02 1.94 + j1.13 1125 4.11 + j2.27 1.80 + j1.22 1150 4.13 + j1.35 1.71 +


Original
PDF MRF10350/D MRF10350 MRF10350/D* motorola J122 MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
2007 - transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Text: = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 , RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , - Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature , , Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level


Original
PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
J122 MARKING

Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor D esigned for am plifier, frequency m ultiplier, or oscillator applications in industrial equipment constructed with surface m ount com ponents. Suitable for use as output driver or pre-driver stages in VHF and , TRANSISTOR NPN SILICON CASE 751-05, STYLE 1 SORF (SO-8) MAXIMUM RATINGS Rating C ollector-Emitter , -j10.4 - Zo L * (Ohm s) - - _ 30 30 - 1000 1000 - - - 5 .6 5 - j 1 2.6 6.25 - j12.2


OCR Scan
PDF MRF3866 --j10 MRF4427, J122 MARKING
1999 - 20c15

Abstract: SYM20C15 20c15 Hart Modem DN25D HART BELL 202 J120 MOSFET hart protocol hart J119 transistor depletion mode mosfet
Text: transistor Q1 (DN25D depletion mode MOSFET), in association with the internal op amp and voltage reference on , external pass transistor (Q2) is added to reduce the power loading on the depletion mode MOSFET Q1 , second section, an operational amplifier and NPN transistor which acts as a current amplifier to set the current flowing from the LOOP RTN pin. The base drive to the NPN transistor servos the voltage , AD421 sinks the necessary current through the pass transistor Q2 from the loop so that the current


Original
PDF AN-534 AD421, 20C15* AD421 16-lead J1-19 J1-20 28F0195-100 J1-21 J1-22 20c15 SYM20C15 20c15 Hart Modem DN25D HART BELL 202 J120 MOSFET hart protocol hart J119 transistor depletion mode mosfet
1995 - motorola J122

Abstract: MOTOROLA transistor 413 transistor j380 51 MRF10350
Text: ) 1025­1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E­01, STYLE 1 MAXIMUM RATINGS Rating , PRODUCT TRANSFERRED TO M/A­COM Microwave Pulse Power Transistor MRF10350 ARCHIVE INFORMATION , *(1) OHMS 2.52 + j0.70 2.18 + j0.85 1.94 + j1.13 1.80 + j1.22 1.71 + j1.31 ZOL* is the conjugate of


Original
PDF MRF10350/D MRF10350 MRF10350/D* MRF10350/D motorola J122 MOTOROLA transistor 413 transistor j380 51
1998 - Transistor Equivalent list po55

Abstract: J119 transistor 2N3904 74HC05 MAX1617 MAX883 MMBT3904LT1 PO55
Text: temperature of the IC and the temperature of a remote (external) diode-connected transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes , transistor . R14 47k J1-18 J1-19 J1-20 J1-21 J1-22 J1-23 J1-24 J1-25 SMBALERT J1-10 R12


Original
PDF MAX1617 2N3904 Transistor Equivalent list po55 J119 transistor 74HC05 MAX883 MMBT3904LT1 PO55
1999 - abzd

Abstract: sot 23 abzd
Text: transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes soldered to the board in a SOT23 package, but for more realistic experiments, it can easily , capacitor 4.7µF, 10V tantalum capacitor DB25 male right-angle connector 3-pin headers NPN transistor , capacitance from DXP to DXN. Use a good-quality, diode-connected, small-signal transistor . No MAX1617A , SMBALERT J1-10 J1-18 J1-19 J1-20 J1-21 J1-22 J1-23 J1-24 J1-25 MAX1617A Temperature Sensor


Original
PDF MAX1617A 2N3904 MAX1617 abzd sot 23 abzd
1998 - MAX1617EVKIT-QSOP

Abstract: No abstract text available
Text: ) diode-connected transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes soldered to the board in a SOT23 package, but for more realistic experiments, it , good-quality, diode-connected, small-signal transistor , J1-18 J1-19 J1-20 J1-21 J1-22 J1-23 J1-24 J1-25 MAX1617 Temperature Sensor Evaluation Kit


Original
PDF MAX1617 2N3904 MAX1617EVKIT-QSOP
Supplyframe Tracking Pixel