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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

J122 SMD TRANSISTOR Datasheets Context Search

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j123

Abstract: No abstract text available
Text: . Pin Number Signal J122 GEN_FPGA[0:11] J123 GEN_FPGA[24:35] J124 GEN_FPGA[12:23 , Switch Device LED GEN_FPGA_PIN0 PB34C BA22 J122 1 2 3 GEN_FPGA_PIN1 PB34D BB22 J122 4 5 6 GEN_FPGA_PIN2 PB35A AW22 J122 7 8 9 GEN_FPGA_PIN3 PB35B AY22 J122 10 11 12 GEN_FPGA_PIN4 PB35C BD21 J122 13 14 15 GEN_FPGA_PIN5 PB35D BC21 J122 16 17 18 GEN_FPGA_PIN6 PB36C BD20


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PDF ebug06 E5379A 16-bit 165-BGA 1-800-LATTICE j123
2005 - J122 SMD TRANSISTOR

Abstract: 74c906 u3g diode Diode BAT41 J122 SMD SMD Tantalum code capacitor color J120 SMD IC 74C906 smd transistor wr smb schottky diode s4
Text: Transistor BC807-40LT1 PNP SMT Transistor 2.2 k/1% SMD Resistor 2.2 k/1% SMD Resistor 2.2 k/1% SMD Resistor , ADG714 D5 14 13 S5 U5­E J1­18 J1­19 J1­20 J1­21 J1­22 J1­23 J1­24 SCLK DIN DOUT 12 74C906 , SMD Tantalum Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 47 µF/10 V SMD Tantalum Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 47 µF/10 V SMD Tantalum Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 100 nF/50 V X7R SMD Ceramic Capacitor 100 nF/50 V X7R SMD


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PDF 10-Bit EVAL-AD7816/7/8EB AD7818) AD7817) AD7816 AD7816/AD7817/AD7818 EVAL-AD7816/7/8EB EB04586 J122 SMD TRANSISTOR 74c906 u3g diode Diode BAT41 J122 SMD SMD Tantalum code capacitor color J120 SMD IC 74C906 smd transistor wr smb schottky diode s4
2013 - transistor C 2615

Abstract: No abstract text available
Text: , class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band , 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz Transistor Impedance Information Note , j1.22 1.4 2.8 + j0.025 3.09 + j0.781 Please call the representative for detailed circuit


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PDF 1214GN-180LV 55-KR 1214GN-180LV transistor C 2615
2003 - GPI102

Abstract: Bargraph IC 512 j122 AD7877 bargraph LCD CY7C68013 variable resistor 2.2k J124 4738C GPI104
Text: OPTIONAL R-C J2-1 J12-2 J2-2 J12-4 J2-3 J2-4 J12-1 J12-3 Figure 1. AD7877 Evaluation , connector. Connections are as follows: X+ to J12-1, X­ to J12-2 , Y+ to J12-3, and Y­ to J12-4. J11 , C5 0.1F J12-2 J2-1 C1 0.1F J7 3.3V NC = NO CONNECT J6 2 R1 C10 10F , CAP+ CAP CAP CAP+ CAP+ LED CON/POWER SMB CON-SIP-4P_ SMD USB JUMPER2\SIP3 VRES RES RES , Electrolytic ( SMD B Size) 0.1 µF Multilayer Ceramic (603) 22 pF Multilayer Ceramic (603) 2.2 µF 16 V


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PDF AD7877 EVAL-AD7877* AD7877 ADP3303 C04553 GPI102 Bargraph IC 512 j122 bargraph LCD CY7C68013 variable resistor 2.2k J124 4738C GPI104
2009 - J122 transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
Text: PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features · · · · · · · · · NPN silicon , contained herein without notice. PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs , Fre q (GHz) RF Test Fixture Impedance F (GHz) ZIF () ZOF () 2.7 6.9 - j12.2 4.5 - , information contained herein without notice. PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz


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PDF PH2731-75L J122 transistor RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
2013 - J122 SMD

Abstract: J122 SMD TRANSISTOR
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 4 - 15 April 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , Semiconductors BLF8G27LS-100P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , BLF8G27LS-100P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per , 2600 2700 [1] ZS and ZL defined in Figure 1. ZS[1] () 7.4 j12.2 8 j12.1 11 j16.9 ZL[1] () 5


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PDF BLF8G27LS-100P J122 SMD J122 SMD TRANSISTOR
2013 - Not Available

Abstract: No abstract text available
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 3 - 18 March 2013 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , Semiconductors BLF8G27LS-100P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , BLF8G27LS-100P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per , 2600 2700 [1] ZS and ZL defined in Figure 1. ZS[1] () 7.4 j12.2 8 j12.1 11 j16.9 ZL[1] () 5


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PDF BLF8G27LS-100P
2012 - J122 SMD TRANSISTOR

Abstract: No abstract text available
Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 - 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , BLF6G22LS-40BN Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4, 5 6, 7 Pinning , BLF6G22LS-40BN Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 C per section , Rev. 1 - 28 June 2012 3 of 13 NXP Semiconductors BLF6G22LS-40BN Power LDMOS transistor


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PDF BLF6G22LS-40BN J122 SMD TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at , Semiconductors Power LDMOS transistor 1.3 Applications ̈ RF power amplifiers for W-CDMA base stations and , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per , 0.25 - Ω IDq quiescent drain current main transistor : 310 345 380 mA VDS


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PDF BLF6G22L-40BN
2010 - J122 SMD TRANSISTOR

Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 - 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , Hazardous Substances (RoHS) BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor 1.3 , rights reserved. 2 of 13 BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor 6 , transistor : 310 345 380 mA VDS = 28 V sense transistor : IDS = 7.43mA; VDS = 26.7 V 7


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PDF BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN
2012 - Not Available

Abstract: No abstract text available
Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , frequency range BLF6G22LS-40BN NXP Semiconductors Power LDMOS transistor 2. Pinning information , Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 C per section , Semiconductors Power LDMOS transistor 8.2 2-Carrier W-CDMA with 5 MHz carrier spacing 001aam457 20 Gp


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PDF BLF6G22LS-40BN
2013 - Not Available

Abstract: No abstract text available
Text: , COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 600 Watts of , Application – 0912GN-600 is a general purpose power transistor that can be used for any of the following , 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215MHz TRANSISTOR IMPEDANCE , . Impedance Data Freq (GHz) Zs Zl 0.96 0.84 - j1.48 1.63 - j1.22 1.09 0.79 - j0


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PDF 0912GN-600 55-KR 0912GN-600
2010 - POWER TRANSISTOR

Abstract: BLA6H0912-500
Text: avionics radar power transistor 10. Abbreviations Table 10. Acronym DME ELM JTIDS LDMOS Mode-S RF SMD , BLA6H0912-500 LDMOS avionics radar power transistor Rev. 02 - 2 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz , 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 6


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PDF BLA6H0912-500 BLA6H0912-500 POWER TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , avionics radar power transistor 1.3 Applications ̈ A-band power amplifiers for radar applications in , -500 NXP Semiconductors LDMOS avionics radar power transistor 6. Characteristics Table 6. DC , radar power transistor 7. Application information 7.1 Impedance information Table 8. Typical


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PDF BLA6H0912-500 BLA6H0912-500
2010 - BLA6H0912

Abstract: power amplifier NXP 800B 1030 mhz power tr unit j122 transistor j147 1140MHz J122 SMD TRANSISTOR
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 - 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , (RoHS) BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6 , Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information


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PDF BLA6H0912-500 BLA6H0912-500 BLA6H0912 power amplifier NXP 800B 1030 mhz power tr unit j122 transistor j147 1140MHz J122 SMD TRANSISTOR
2010 - J122 SMD TRANSISTOR

Abstract: 800B MHz-2 BLA6H0912-500
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 03 - 30 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , (RoHS) BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6 , Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information


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PDF BLA6H0912-500 BLA6H0912-500 J122 SMD TRANSISTOR 800B MHz-2
1996 - motorola J122

Abstract: MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
Text: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 ­ 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode­S transmitters. · Guaranteed Performance @ 1090 MHz Output Power = , TRANSISTOR NPN SILICON · 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR · Hermetically , 3.55 + j3.02 1.94 + j1.13 1125 4.11 + j2.27 1.80 + j1.22 1150 4.13 + j1.35 1.71 +


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PDF MRF10350/D MRF10350 MRF10350/D* motorola J122 MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
MRF10350

Abstract: motorola rf Power Transistor 1685 transistor motorola J122
Text: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025­1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode­S transmitters. · Guaranteed Performance @ 1090 MHz Output Power = , TRANSISTOR NPN SILICON · 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR · Hermetically , 3.55 + j3.02 1.94 + j1.13 1125 4.11 + j2.27 1.80 + j1.22 1150 4.13 + j1.35 1.71 +


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PDF MRF10350/D MRF10350 MRF10350/D* MRF10350 motorola rf Power Transistor 1685 transistor motorola J122
2007 - transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Text: = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 , RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , - Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature , , Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
J122 MARKING

Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor D esigned for am plifier, frequency m ultiplier, or oscillator applications in industrial equipment constructed with surface m ount com ponents. Suitable for use as output driver or pre-driver stages in VHF and , TRANSISTOR NPN SILICON CASE 751-05, STYLE 1 SORF (SO-8) MAXIMUM RATINGS Rating C ollector-Emitter , -j10.4 - Zo L * (Ohm s) - - _ 30 30 - 1000 1000 - - - 5 .6 5 - j 1 2.6 6.25 - j12.2


OCR Scan
PDF MRF3866 --j10 MRF4427, J122 MARKING
1999 - 20c15

Abstract: SYM20C15 20c15 Hart Modem DN25D HART BELL 202 J120 MOSFET hart protocol hart J119 transistor depletion mode mosfet
Text: transistor Q1 (DN25D depletion mode MOSFET), in association with the internal op amp and voltage reference on , external pass transistor (Q2) is added to reduce the power loading on the depletion mode MOSFET Q1 , second section, an operational amplifier and NPN transistor which acts as a current amplifier to set the current flowing from the LOOP RTN pin. The base drive to the NPN transistor servos the voltage , AD421 sinks the necessary current through the pass transistor Q2 from the loop so that the current


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PDF AN-534 AD421, 20C15* AD421 16-lead J1-19 J1-20 28F0195-100 J1-21 J1-22 20c15 SYM20C15 20c15 Hart Modem DN25D HART BELL 202 J120 MOSFET hart protocol hart J119 transistor depletion mode mosfet
1995 - motorola J122

Abstract: MOTOROLA transistor 413 transistor j380 51 MRF10350
Text: ) 1025­1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E­01, STYLE 1 MAXIMUM RATINGS Rating , PRODUCT TRANSFERRED TO M/A­COM Microwave Pulse Power Transistor MRF10350 ARCHIVE INFORMATION , *(1) OHMS 2.52 + j0.70 2.18 + j0.85 1.94 + j1.13 1.80 + j1.22 1.71 + j1.31 ZOL* is the conjugate of


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PDF MRF10350/D MRF10350 MRF10350/D* MRF10350/D motorola J122 MOTOROLA transistor 413 transistor j380 51
1998 - Transistor Equivalent list po55

Abstract: J119 transistor 2N3904 74HC05 MAX1617 MAX883 MMBT3904LT1 PO55
Text: temperature of the IC and the temperature of a remote (external) diode-connected transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes , transistor . R14 47k J1-18 J1-19 J1-20 J1-21 J1-22 J1-23 J1-24 J1-25 SMBALERT J1-10 R12


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PDF MAX1617 2N3904 Transistor Equivalent list po55 J119 transistor 74HC05 MAX883 MMBT3904LT1 PO55
1999 - abzd

Abstract: sot 23 abzd
Text: transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes soldered to the board in a SOT23 package, but for more realistic experiments, it can easily , capacitor 4.7µF, 10V tantalum capacitor DB25 male right-angle connector 3-pin headers NPN transistor , capacitance from DXP to DXN. Use a good-quality, diode-connected, small-signal transistor . No MAX1617A , SMBALERT J1-10 J1-18 J1-19 J1-20 J1-21 J1-22 J1-23 J1-24 J1-25 MAX1617A Temperature Sensor


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PDF MAX1617A 2N3904 MAX1617 abzd sot 23 abzd
1998 - MAX1617EVKIT-QSOP

Abstract: No abstract text available
Text: ) diode-connected transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes soldered to the board in a SOT23 package, but for more realistic experiments, it , good-quality, diode-connected, small-signal transistor , J1-18 J1-19 J1-20 J1-21 J1-22 J1-23 J1-24 J1-25 MAX1617 Temperature Sensor Evaluation Kit


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PDF MAX1617 2N3904 MAX1617EVKIT-QSOP
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