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PCJ-109D3M,301 (1721081-4) TE Connectivity (1721081-4) PCJ-109D3M,301
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447AJ109M1606 Glenair Inc Powell Electronics 15 $555.04 $288.81
447AJ109M1606 Glenair Inc Interstate Connecting Components - - -
447FJ109NF1604 Glenair Inc Powell Electronics 15 $592.52 $308.32
447FJ109NF1604 Glenair Inc Interstate Connecting Components - - -
447HJ109NF1506-L Glenair Inc Interstate Connecting Components - - -
447HJ109NF1506-L Glenair Inc Powell Electronics 20 $592.23 $308.17
447HJ109NF2316-LPB Glenair Inc Powell Electronics 15 $811.04 $422.04
447HJ109NF2316-LPB Glenair Inc Interstate Connecting Components - - -
447HJ109NF2512-LP Glenair Inc BTC Electronic Components 1 - -
447HJ109ZNU1508-L Glenair Inc BTC Electronic Components 10 - -
ACAJ-109-T Abracon Corporation Sager - - -
CDRB2BJ10-90SZ-S99 SMC Corporation of America Allied Electronics & Automation - $281.84 $281.84
F55J109 Ohmite Mfg Co Master Electronics 5 - -
GT1J109M35060SB Samwha Electronics TME Electronic Components 23 $6.31 $4.68
HC1J109M30050HA Samwha Electronics TME Electronic Components 969 $4.00 $2.19
HE1J109M40040HA Samwha Electronics TME Electronic Components 126 $5.43 $3.33
HS35R1024J10901 Dynapar Allied Electronics & Automation - $652.29 $619.67
HST112BJ-10-9 Hi-Shear Technology Corporation Bisco Industries 20 - -
J01024J1094 Telegartner Karl Gartner GmbH TME Electronic Components 10 $12.01 $10.50
J109 Fairchild Semiconductor Corporation Rochester Electronics 20,790 $0.24 $0.19
J109 Calogic Inc Karl Kruse GmbH & Co KG 5,000 - -
J109 National Semiconductor Corporation Bristol Electronics 1,928 $0.45 $0.09
J109 ON Semiconductor Newark element14 791 $0.40 $0.12
J109 ON Semiconductor Farnell element14 22,270 £0.25 £0.12
J109 ON Semiconductor Future Electronics - $0.15 $0.13
J109 ON Semiconductor element14 Asia-Pacific 21,919 $0.49 $0.14
J109 ON Semiconductor Avnet - $0.10 $0.10
J109 Vishay Siliconix New Advantage Corporation 47 - -
J109 ON Semiconductor Avnet - $0.40 $0.12
J109-18 Vishay Siliconix Bristol Electronics 2,000 $0.75 $0.20
J109-D26Z ON Semiconductor Future Electronics - $0.33 $0.33
J109-LF Calogic Inc Karl Kruse GmbH & Co KG 5,000 - -
J109,126 NXP Semiconductors Chip1Stop 50 $0.49 $0.38
KPT01J10-98PF42 ITT Interconnect Solutions PEI Genesis 273 $37.19 $22.32
KPT01J10-98PF42 ITT Interconnect Solutions Newark element14 273 $51.97 $34.22
KPT01J10-98S ITT Interconnect Solutions element14 Asia-Pacific - $183.15 $172.38
KPT06J10-98P ITT Interconnect Solutions Allied Electronics & Automation - $117.47 $81.32
M53T-J109-05 Methode Electronics Inc Bristol Electronics 300 - -
MS3111J10-98SY Amphenol Industrial Operations Heilind Electronics - - -
MS3111J10-98SY Amphenol Industrial Operations Heilind Electronics - Europe - - -
PMBFJ109 NXP Semiconductors Bristol Electronics 3,000 - -
PMBFJ109,215 NXP Semiconductors Newark element14 1,136 $0.12 $0.12
PMBFJ109,215 Nexperia Avnet 3,000 $0.31 $0.26
PMBFJ109,215 NXP Semiconductors Future Electronics 18,000 $0.15 $0.15
PMBFJ109,215 NXP Semiconductors Future Electronics - $0.28 $0.18
PMBFJ109,215 NXP Semiconductors Richardson RFPD - $0.17 $0.17
PMBFJ109,215 NXP Semiconductors New Advantage Corporation 12,000 $0.30 $0.27
PMBFJ109,215. NXP Semiconductors element14 Asia-Pacific 60 $0.54 $0.18
PMBFJ109,215. NXP Semiconductors Farnell element14 60 £0.35 £0.16
PT01J10-98P Amphenol Aerospace Farnell element14 - £58.50 £42.46
PT06J-10-98P Amphenol Industrial Operations Heilind Electronics - - -
PT06J-10-98P Amphenol Industrial Operations Heilind Electronics - Europe - - -
PT06J-10-98P Amphenol Industrial Operations Allied Electronics & Automation - $74.52 $74.52
PT06J-10-98P Amphenol Corporation Avnet - $33.29 $28.29
PT06J-10-98PZ(023) Amphenol Industrial Operations Heilind Electronics - - -
PT06J-10-98PZ(023) Amphenol Industrial Operations Heilind Electronics - Europe - - -
PT06J-10-98SX(027) Amphenol Industrial Operations Heilind Electronics - - -
PT06J-10-98SX(027) Amphenol Industrial Operations Heilind Electronics - Europe - - -
PT06J10-98S Amphenol Corporation element14 Asia-Pacific 77 $143.10 $101.05
PT06J10-98S Amphenol Aerospace Farnell element14 - £59.41 £38.92
RF178-02SP1-01BJ1-0985 Samtec Inc Samtec - - -
RF316-01BJ1-01BJ1-0914 Samtec Inc Samtec - - -
RF316-03RP1-01BJ1-0914 Samtec Inc Samtec - - -
RF316-03SP1-01BJ1-0915 Samtec Inc Samtec - - -
RGEJ1096PF Panduit Corp Sager - $60.29 $48.38
RGREJ1096Y Panduit Corp Sager - $38.83 $31.16
RNC55J1093BS Vishay Intertechnologies ComS.I.T. 527 - -
RNC55J1093BSRE5 Vishay Intertechnologies Chip1Stop 1,000 $1.60 $1.43
SPI01J10-98P SPI Electroshield - - -
SPI01J10-98S SPI Electroshield - - -
SPI06J10-98P SPI Electroshield - - -
SPI06J10-98S SPI Electroshield - - -
TJ-1097-BL Sato Parts USA Chip1Stop 15 $0.68 $0.63
TJ-1097-R Sato Parts USA Chip1Stop 10 $1.99 $1.99
XCKJ10971DSC8 Schneider Electric Sager - $165.40 $148.87

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J109 datasheet (45)

Part Manufacturer Description Type PDF
J109 Calogic N-Channel JFET Switch Original PDF
J109 Fairchild Semiconductor N-Channel Switch Original PDF
J109 Fairchild Semiconductor N-Channel Switch Original PDF
J109 Fairchild Semiconductor N-Channel Switch Original PDF
J109 InterFET N-Channel silicon junction field-effect transistor Original PDF
J109 Philips Semiconductors N-channel silicon junction FETs Original PDF
J109 Philips Semiconductors N-Channel Junction FET Original PDF
J109 Vishay Telefunken TRANS JFET N-CH 25V 40MA 3TO-92 Original PDF
J109 Intersil N-channel JFET switch. Scan PDF
J109 Linear Integrated Systems LOW NOISE N-CHANNEL JFET SWITCH Scan PDF
J109 Motorola European Master Selection Guide 1986 Scan PDF
J109 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
J109 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
J109 Others Semiconductor Master Cross Reference Guide Scan PDF
J109 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
J109 Others Basic Transistor and Cross Reference Specification Scan PDF
J109 Others Shortform Transistor PDF Datasheet Scan PDF
J109 Others Shortform Transistor PDF Datasheet Scan PDF
J109 Others Shortform Datasheet & Cross References Data Scan PDF
J109 National Semiconductor N-Channel JFETs Scan PDF

J109 Datasheets Context Search

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1996 - CRS15

Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109 ; J110 N-channel silicon junction FETs Product , Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109 ; J110 , CONDITIONS MIN. MAX. UNIT - ±25 V J108 -3 -10 V J109 -2 -6 V , voltage ID = 1 µA; VDS = 5 V J110 IDSS drain current VGS = 0; VDS = 5 V J108 J109 Ptot , junction FETs J108; J109 ; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System


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2011 - j109

Abstract: No abstract text available
Text: J109 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J109 This n-channel JFET is , . (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J109 LOW ON RESISTANCE rDS(on , Temperatures Storage Temperature 55°C to +150°C J109 Benefits: Operating Junction Temperature 55°C to , 350mW Low Noise MAXIMUM CURRENT J109 Applications: Gate Current (Note 1) 50mA Analog Switches , 25V J109 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN


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PDF 350mW j109
J108

Abstract: J109 J110 Silicon Junction FETs J109 7
Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109 ; J110 N-channel silicon junction FETs Product , Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109 ; J110 , CONDITIONS MIN. MAX. UNIT - ±25 V J108 -3 -10 V J109 -2 -6 V , cut-off voltage IDSS drain current ID = 1 µA; VDS = 5 V VGS = 0; VDS = 5 V J108 J109 Ptot , junction FETs J108; J109 ; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System


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J108

Abstract: J110 J109 2J108
Text: bbS3«ì31 Q02400H 353 «APX N AMER PHILIPS/DISCRETE b7E J108/ J109 /J110 N-channel junction FETs , /DISCRETE b7E T>- N-channei junction FETs J108/ J109 /J110 LIMITING VALUES In accordance with the Absolute , V VDS = 5 V - 3 nA idss drain current Vgs = 0 J108 Vds = 15 V J109 J110 80 40 10 - mA -V(BR)GSS , J108 Vds = 5 V J109 J110 3 2 0.5 10 6 4 V RDS(on) drain-source on-resistance Vgs = 0V J108 VDS = 0.1V J109 J110 - 8 12 18 Q July 1993 618 This Material Copyrighted By Its Respective Manufacturer â


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PDF Q02400H J108/J109/J110 aTO-92 PINNING-TO-92 DD24DD3 J108 J110 J109 2J108
j109

Abstract: J110
Text: Discrete POWER & Signal Technologies S S M S O N D U C T O R J108 J109 J110 N-Channel , Ambient Pd 997 F airchild S em iconductor C orporation Max Units J108 / J109 / J110 350 2.8 125 mW mW/°C °C/W 357 °C/W J108 / J109 / J110 ■WWWWWWMBWM* (continued , -1 5 V, VD = 0, TA = 100°C S S VDS= 15 V, lD= 10nA J108 J109 J110 -3.0 -2.0 -0.5 V , ) Drain-Source On Resistance VD < 0.1 V, VG = 0 S S J108 J109 J110 J108 J109 J110 < < < E E E


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PDF
1996 - J108

Abstract: J109 J110
Text: J108 J109 J110 G S TO-92 D N-Channel Switch This device is designed for analog or , Thermal Resistance, Junction to Ambient Max Units J108 / J109 / J110 350 2.8 125 mW mW/°C °C/W 357 °C/W J108 / J109 / J110 N Discrete POWER & Signal Technologies , VGS = - 15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 nA J108 J109 J110 - 25 - 3.0 - 2.0 - , (on) Drain-Source On Resistance J108 J109 J110 J108 J109 J110 VDS 0.1 V, VGS = 0 80


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1997 - J110

Abstract: J109 J108
Text: J108 J109 J110 G TO-92 SD N-Channel Switch This device is designed for analog or , J108 / J109 / J110 350 2.8 125 mW mW/°C °C/W 357 °C/W J108 / J109 / J110 Discrete , J109 J110 - 25 - 3.0 - 2.0 - 0.5 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain , 10 J108 J109 J110 J108 J109 J110 SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(off) Cdg(off , DRAIN CURRENT (mA) 100 J108 / J109 / J110 J108 / J109 / J110 N-Channel Switch (continued


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PDF
J110

Abstract: No abstract text available
Text: 0024002 353 « A P X b?E D N AMER PHILIPS/DISCRETE J108/ J109 /J110 July 1993 FEATURES • High , Product specification b7E D - N-channel junction FETs J108/ J109 /J110 LIMITING , 10 V VDS = 5 V Vgs = 0 V ds = 15 V J108 J109 J110 - I g = 1 pA V qs = 0 - V G S ( o ff ) gate-source cut-off voltage Id = 1 p A VDS = 5 V J108 J109 J110 Rd s m drain-source on-resistance Vqs = 0 V VDS = 0.1 V J108 J109 J110 nA - gate-source breakdown voltage 618


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PDF J108/J109/J110 aTO-92 DD34005 J110
2012 - Not Available

Abstract: No abstract text available
Text: Lambertian 2 1 200 mV 1 J105 J111 H1 J109 CONN RECT 5x2 H2 1 Fixed Hole 1 , or J108 is connected J109 Output current setting, reference to table 5(Output current setting , J109 are used for output current setting according to eq. 1: Iout(A) + 0.2 R(W) Where R is the total resistance between FB and GND, J109 allows parallel connections of several resistors to select output current. Following is the output current setting table of J109 (1 = short connected; 0 = left


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PDF NCP5030MTTXGEVB NCP5030 EVBUM2111/D
2011 - Not Available

Abstract: No abstract text available
Text: €25V Choppers Gate to Source Voltage VGSS = ‐25V   J109 ELECTRICAL CHARACTERISTICS @ 25°C , J109 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS ,     J109 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL , J109 SWITCHING CIRCUIT PARAMETERS                                                                                                                          VGS(L) ‐7V RL 150Ω ID(on) 10mA     , J109 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J109 This n-channel JFET is


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J108

Abstract: J110 J109
Text: Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109 ; J110 , \ VDS = 5 V J108 -3 -10 V J109 -2 -6 V J110 -0.5 -4 V Idss drain current VQS = 0; VDS = 5 V J108 80 - mA J109 40 mA J110 10 mA Ptot total power dissipation up to Tamb = 50 °C - 400 mW , Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109 ; J110 LIMITING , V J109 -2 - -6 V J110 -0.5 - -4 V tass drain current VGs = 0;Vds = 15V J108 80 - - mA


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PDF 7110fl2b 711Dfl2b 010bS13 J108 J110 J109
J110

Abstract: j108 J109
Text: J108 / J109 / J110 I F A IH e W iL B Ü M C D N D U Ü T Ö R ' Discrete POWER & Signal Technologies J108 J109 J110 N-Channel Switch This device is designed for analog or digital switching , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max J108 / J109 / J110 , p o r a tio n J108 / J109 / J110 N-Channel Switch (continued) Electrical Characteristics , 10 nA J1 08 J109 J110 -3 .0 -2 .0 -0 .5 ON CHARACTERISTICS < < < E E E Id s s Zero-Gate


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J108

Abstract: J110 J109
Text: analog switches, choppers and commutators. fc.3E D t.bS3T54 007Bb35 Ö27 «SIC3 J108/ J109 /J110 , Preliminary specification bfaSBTSM 0075b3b 7b3 «SIC3 J108/ J109 /J110 LIMITING VALUES In accordance with the , current -Vgs = 10 V VDS = 5 V - 3 nA Idss drain current Vqs = 0 J108 Vos = 15 V J109 J110 80 40 10 - mA , voltage Id = 1hA J108 Vps = 5V J109 J110 3 2 0.5 10 6 4 V RDS(on) drain-source on-resistance Vgs = 0V J108 VDS = 0.1V J109 J110 - 8 12 18 n October 1990 This Material Copyrighted By Its Respective


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PDF bS3T54 007Bb35 J108/J109/J110 bbS3T24 0D72b3Ã J108 J110 J109
J110

Abstract: j108 j110, national
Text: 531 National SlA Semiconductor J108 J109 J110 TL/Q/10100-2 N-Channel JFET Switch Electrical Characteristics Symbol O FF CH ARACTERISTICS V (B R)G SS ta = 25°c unless otherwise noted Min Max Unita Parameter Gate-Source Breakdown Voltage (V q s = 0, Iq = - 1 0 ¿lAdc) Gate Reverse Current (Vq s = - 1 5 , = 10 nAdc) J108 J109 J110 -2 5 Vdc Ig s s -3 .0 -2 0 0 -3 .0 -2 .0 -0 .5 -1 0 -6 .0 -4 , , (Note 1) (VDS = 1 5 V d c ,V GS = 0) J108 J109 J110 J108 J109 J110 80 40 10 8.0 12 18 mAdc


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PDF TL/Q/10100-2 J110 j108 j110, national
2002 - J109

Abstract: No abstract text available
Text: J108/ J109 /J110/MMBFJ108 J108/ J109 /J110/MMBFJ108 Symbol Parameter Max. J108 - 110 625 5.0 , Fairchild Semiconductor Corporation Rev. B1, November 2002 J108/ J109 /J110/MMBFJ108 Thermal , J108/ J109 /J110/MMBFJ108 Typical Characteristics J108/ J109 /J110/MMBFJ108 Typical , , November 2002 J108/ J109 /J110/MMBFJ108 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 â , .29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 J108/ J109


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PDF
2011 - Not Available

Abstract: No abstract text available
Text: €25V Choppers Gate to Source Voltage VGSS = ‐25V   J109 ELECTRICAL CHARACTERISTICS @ 25°C , J109 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS ,     J109 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL , J109 SWITCHING CIRCUIT PARAMETERS                                                                                                                          VGS(L) ‐7V RL 150Ω ID(on) 10mA     , J109 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J109 This n-channel JFET is


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PDF OT-23
2002 - J108

Abstract: MMBFJ108 J109
Text: % ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 J108/ J109 /J110/MMBFJ108 J108/ J109 , J108/ J109 /J110/MMBFJ108 Thermal Characteristics TA=25°C unless otherwise noted r DS - DRAIN , Figure 6. Noise Voltage vs Frequency Rev. B, July 2002 J108/ J109 /J110/MMBFJ108 Typical Characteristics J108/ J109 /J110/MMBFJ108 Typical Characteristics (Continued) 50 TA = 25 °C , J108/ J109 /J110/MMBFJ108 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10


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N-Channel JFET FETs

Abstract: No abstract text available
Text: J109 J110 CASE 29-04, STYLE 5 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total D evice D issipatio n (ii T ^ = 25*C Derate above 25*0 Ju nctio n T em , J1 09 J 110 rD S(on) J109 J110 - - - - 12 18 'DSS 40 10 ohm s m Adc SMALL-SIGNAL , DIODES J109 , J110 FIGURE 1 - COMMON SOURCE INPUT CAPACITANCE versus GATE-SOURCE VOLTAGE FIGURE 2 - , SISTO R S, FETs AND DIODES 4-38 J109 , J110 FIGURE 7 - OUTPUT CHARACTERISTIC v GSIoff| - -5.0 V


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PDF O-226AA) N-Channel JFET FETs
j110, national

Abstract: NATIONAL J110
Text: °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max J1 08/ J109 /J110 350 , J109 J110 -25 -3.0 -3.0 -2 .0 -2 0 0 - 10 -6 .0 -4 .0 V nA nA V V V -0.5 ON , ) Drain-SourceOn Resistance Vos < 0.1 V, Vos = 0 J108 J109 J110 J108 J109 J110 80 40 10 8.0 12 18 n Ì2 , ) bSQUBO 0 0 4 0 ^ 2 7 b20 7-6 J108 / J109 / J110 N-Channei Switch (continued) Typical


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PDF bSG1130 j110, national NATIONAL J110
J108

Abstract: J109 J110 J110A N-Channel JFET Switch
Text: LINEAR SYSTEMS Linear Integrated Systems J108. J109. J110. J110A LOW NOISE N-CHANNEL JFET SWITCH FEATURES L0WrDS(on)<8Q LOW NOISE en=6nVVHz © 10Hz TYPICAL HIGH SPEED tH,„„, +T =5nS TYPICAL d(on) r ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Reverse Gate to , Temperature -65°C to +200°C SYMBOL CHARACTERISTICS J108 J109 J110 UNITS CONDITIONS 'gss Gate , VDS=VGS=0 'd(on) Turn ON Delay Time 4 ~ 4 ~ - 4 ns Switchina Time Test Conditions J108 J109 J110 VDD


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PDF J110A 360mW 300ns; J108 J109 J110 J110A N-Channel JFET Switch
Not Available

Abstract: No abstract text available
Text: LINEAR SYSTEMS Linear Integrated Systems J108. J109. J110. J110A L0W N0|S£ N _ C H A N N Ë L JFET SWITCH FEATURES L O W r DS(on)< 8 ß iJ108) LOW NOISE e n=6nVVHz @ 10Hz TYPICAL HIGH SPEED t d(on) . +T =5nS TYPICAL r ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise noted , n dg(off) 1 J 108 1 -3 -10 3 8 J109 -3 -6 3 12 1 J110 U N IT S I C O N D IT IO , 4 1 - I Switchina Time Test Conditions J108 J109 1 ,5V -7 V 150 £2 J110 1 ,5V -5V 150£2


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PDF J110A iJ108)
2002 - Not Available

Abstract: No abstract text available
Text: J108 / J109 / J110 / MMBFJ108 J108 J109 J110 MMBFJ108 G S SOT-23 G S TO-92 D Mark: I8 D NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed , / J109 / J110 / MMBFJ108 N-Channel Switch (continued) Electrical Characteristics Symbol Parameter , / J109 / J110 / MMBFJ108 N-Channel Switch (continued) Typical Characteristics (continued , 10 15 20 I D - DRAIN CURRENT (mA) 25 5-9 J108 / J109 / J110 / MMBFJ108 N-Channel Switch


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PDF MMBFJ108 OT-23
2002 - J108

Abstract: MMBFJ108
Text: , Duty Cycle 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 J108/ J109 /J110/MMBFJ108 J108/ J109 /J110/MMBFJ108 Symbol Parameter Max. J108 - 110 625 5.0 PD , Rev. B1, November 2002 J108/ J109 /J110/MMBFJ108 Thermal Characteristics TA=25°C unless otherwise , Rev. B1, November 2002 J108/ J109 /J110/MMBFJ108 Typical Characteristics J108/ J109 /J110 , 12. Power Dissipation vs Ambient Temperature Rev. B1, November 2002 J108/ J109 /J110/MMBFJ108


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PDF
Not Available

Abstract: No abstract text available
Text: LINEAR SYSTEMS Linear Integrated Systems J108. J109. J110. J110A LOW NOISE N-CHANNEL JFET SWITCH FEATURES L O W r DS(on ) < 8 i 2 < J10 8 > LOW NOISE en=6nVVHz 6 10Hz TYPICAL HIGH S P E E D td(on) + T = 5 n S T Y P IC A L ABSOLUTE M AXIM UM R ATIN G S @ 25°C (unless otherwise noted , CHARACTERISTICS 1 J108 i J109 1 J110 1 UNITS! CONDITIONS I7HÎ1 m a \ m 'i m s its t m i rcrm sjstü rn ra 'gss v , Time Test Conditions J108 ns VDD V GS(ofr) J109 1.5V "7 V J110 1.5V ' 5V - - - -


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PDF J110A 360mW 300ns;
J108

Abstract: J109 J110
Text: (ß Discrete POWER & Signal ""tional Technologies Semiconductor" J108 J109 J110 N-Channel , . Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J108/ J109 , = 100°C - 3.0 -200 nA nA V<3S(ofl) Gate-Source Cutoff Voltage VDS = 15 V, (D = 10 nA J108 J109 , Current* Vds = 15 V, lGs = 0 J108 J109 J110 80 40 10 mA mA mA rosoni Drain-Source On Resistance Vos < 0.1 V, Vos =0 J108 J109 J110 8.0 12 18 n Q a SMALL SIGNAL CHARACTERISTICS Cdg(on) Csa(off


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PDF 125-G bSG113Q D40c12cà J108 J109 J110
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