The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
J108 (1437383-5) TE Connectivity Ltd Accessories ( Terminal Block ); J108=CIRCUIT JUMPER PACKAGED ( Buchanan )
FL2500-NO.3-J1-0-80MM (CB0938-000) TE Connectivity (CB0938-000) FL2500-NO.3-J1-0-80MM
TYAV1J108F36ML (1879296-5) TE Connectivity Ltd Capacitors; TYAV 63V 1000UF 16 x 36 ( Neohm )
TYRV1J108F25ML (1879300-5) TE Connectivity Ltd Capacitors; TYRV 63V 1000UF 16 x 25 ( Neohm )
TYRE1J108F31ML (3-1879305-3) TE Connectivity Ltd Capacitors; TYRE 63V 1000UF 16 x 31.5 ( Neohm )
TYEV0J108G10MTR (1-1879290-1) TE Connectivity Ltd Capacitors; TYEV 6.3V 1000UF 8 x 10 ( Neohm )

J108-18 datasheet (7)

Part Manufacturer Description Type PDF
J108-18 Others Semiconductor Master Cross Reference Guide Scan PDF
J108-18 Others Basic Transistor and Cross Reference Specification Scan PDF
J108-18 Others Shortform Transistor PDF Datasheet Scan PDF
J108-18 Others Shortform Datasheet & Cross References Data Scan PDF
J108-18 National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
J108-18 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
J108-18 Siliconix FET Design Catalogue 1979 Scan PDF

J108-18 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - J108

Abstract: j108 EQUIVALENT
Text: audio amplifiers. The hermetically sealed TO- 18 package is well suited for hi-reliability and harsh , Turn Off Time Turn Off Fall Time 3 1 4 18 ns VDD = 1.5V VGS(H) = 0V See Switching Circuit Available Packages: J108 in TO- 18 J108 in bare die. Please contact Micross for full package and die dimensions TO- 18 (Bottom View) td(on) tr td(off) tf Note 1 Absolute


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2011 - J108

Abstract: j108 EQUIVALENT
Text: Time Turn Off Fall Time 3 1 4 18 ns VDD = 1.5V VGS(H) = 0V See Switching Circuit


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PDF OT-23 350mW J108 j108 EQUIVALENT
j108 EQUIVALENT

Abstract: No abstract text available
Text: J108 J109 J110 -10 -6 -4 8 12 18 20 20 20 For further design information please consult , Forward Voltage rDS(ON) V GS(F) Vq s = 0 V. V o s < = 0 .1 V = 8 0.7 12 18 a V , 85 15 18 85 15 gos rds(ON) kHz = vGS = ov. i0 f Vos Vqs " = ov 80 11 3.5 1 kHz , GS(o n ) = 0V Rl 3 1 4 18 ns P/N J108 J109 J110 fo(oN) V g s < off) Tum-Off Time


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PDF O-226AA) OT-23, SST108 2N5432 25ivalent j108 EQUIVALENT
1996 - J108

Abstract: J109 J110
Text: Conditions Min Max Units - 3.0 - 200 - 10 - 6.0 - 4.0 nA nA V V V 8.0 12 18 mA


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j109

Abstract: J110
Text: Idss 80 40 10 8.0 12 18 Q. Q Q. SMALL SIGNAL CHARACTERISTICS Drain Gate & Source Gate


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J110

Abstract: No abstract text available
Text: V 3 2 0.5 10 6 4 V 8 12 18 Q _ - - ■hbS3^31 DDS^DDM 12b APX


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PDF J108/J109/J110 aTO-92 DD34005 J110
1996 - CRS15

Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
Text: 18 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon


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2011 - j108

Abstract: No abstract text available
Text: Time Turn Off Fall Time 3 1 4 18 ns VDD = 1.5V VGS(H) = 0V See Switching Circuit


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PDF 350mW j108
J108

Abstract: J110 J109 2J108
Text: J109 J110 - 8 12 18 Q July 1993 618 This Material Copyrighted By Its Respective Manufacturer â


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PDF Q02400H J108/J109/J110 aTO-92 PINNING-TO-92 DD24DD3 J108 J110 J109 2J108
J108

Abstract: J109 J110 Silicon Junction FETs J109 7
Text: 18 J110 1996 Jul 30 3 Philips Semiconductors Product specification N-channel


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1997 - J110

Abstract: J109 J108
Text: nA nA V V V 8.0 12 18 mA mA mA OFF CHARACTERISTICS V(BR)GSS Gate-Source


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J108

Abstract: J110 J109
Text: ; VDS = 100 mV J108 - - 8 Q J109 - 12 Q J110 - 18 Q 1996 Jul 30 3 711002b DlÜbSRD â


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PDF 7110fl2b 711Dfl2b 010bS13 J108 J110 J109
J108

Abstract: J110 J109
Text: J108 VDS = 0.1V J109 J110 - 8 12 18 n October 1990 This Material Copyrighted By Its Respective


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PDF bS3T54 007Bb35 J108/J109/J110 bbS3T24 0D72b3Ã J108 J110 J109
J110

Abstract: j108 j110, national
Text: , (Note 1) (VDS = 1 5 V d c ,V GS = 0) J108 J109 J110 J108 J109 J110 80 40 10 8.0 12 18 mAdc


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PDF TL/Q/10100-2 J110 j108 j110, national
Not Available

Abstract: No abstract text available
Text: 3 18 25 15 15 pF mA nA n nA V CONDITIONS VDS=° VDS=5V VDS=°V Vp,=15V VDS=5V Vds ^ o.W VDS=°V


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PDF J110A 360mW 300ns;
2002 - J108

Abstract: MMBFJ108 J109
Text: 108 109 110 mA mA mA 8.0 12 18 Small Signal Characteristics Cdg(on) Csg(off


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2003 - ddr dimm pinout

Abstract: socket am3 pinout L1238 j8510 J68 10A J124 MDIO clause 22 fairchild aa11 intel D915 xcvr
Text: Analyzer Connectors 18 10/100 Ethernet Compact Flash 6 4 DPA SMA Block LVDS User , Board Layer Stack-Up The Stratix GX Development Board consists of 18 layers of FR4 material for a , Core 0.0040 1/H 0.0040 ±0.0004 0.00120 SIgnal Plain 18 Mix 0.0040 0.00060 , Stratix XXX XXX NO YES OPEN Shunt EPC_16 RMT_CFG Devices Configured 18 , . These DIP switches are for reference design functions and general purpose use. Tables 18 and 19 list


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PDF RS-232, ddr dimm pinout socket am3 pinout L1238 j8510 J68 10A J124 MDIO clause 22 fairchild aa11 intel D915 xcvr
J108

Abstract: J109 J110 J110A N-Channel JFET Switch
Text: (on) Drain-Source ON Resistance - 8 - 12 18 Q vDS^-iv vGS=ov J110A - - 25 Cdg(off


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PDF J110A 360mW 300ns; J108 J109 J110 J110A N-Channel JFET Switch
P1086

Abstract: J112-18 J108-18 J108 J107-18 J107 J106-18 J106 J105-18 J105
Text: - - - 10 - - 100 NC J105 N 92 3.0 3.0 10.0 25 500 - - - _ - - 3.0 NVA J105- 18 N 92 3.0 3.0 10 25 500 - - - - - - 3.0 NVA J106 N 92 3.0 3.0 6.0 25 200 - - - - - - 6.0 NVA J106- 18 N 92 3.0 3.0 6.0 25 200 - - - - - - 6.0 NVA J107 N 92 3.0 3.0 4.5 25 100 - - - - - - 8.0 NVA J107- 18 N 92 3.0 3.0 4.5 25 100 - - - - - - 8.0 NVA J108 N 92 3.0 3.0 10 25 80 - - - - - - 8.0 NIP J108-18 N 92 3.0 3.0 10 25 80 - - - - - - 8.0 NIP J109 N 92 3.0 3.0 6.0 25 40 - - - - - - 12 NIP J109- 18


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PDF N5640 2N5653 N5654 J105-18 J176-18 J177-18 PN4391 PN4391-18 PN4392 PN4392-18 P1086 J112-18 J108-18 J108 J107-18 J107 J106-18 J106 J105
J110

Abstract: j108 J109
Text: Voltage Drain Current* VD S = 15 V, lGS= 0 J1 08 J109 J110 J1 08 J109 J110 80 40 10 8.0 12 18


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2002 - J109

Abstract: No abstract text available
Text: , VGS = 0 108 109 110 mA mA mA 8.0 12 18 Ω Ω Ω Small Signal Characteristics


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Not Available

Abstract: No abstract text available
Text: -2 -25 40 ~ - - -3 -6 -3 12 15 15 85 - -0.5 -25 10 - - -3 -4 ~ -3 18 25


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PDF J110A 360mW 300ns;
2n5432 equivalent

Abstract: U320-2 2N5432 J108 J109 J110 j108 EQUIVALENT
Text: Current (Note 1 ) 3 3 3 nA VDS " SV' VGS = v 6 rDS(on) Drain-Source ON Resistance 8 12 18 , 150176 T-TEMPERATURE (°CI ON Resistance vs Ambient Temperature u SI II si 1.2 £>5 . 18 ' lp " 1 , mA IG 4 ID- 3 n 'gss »Vos- I ) 2 4 6 8 10 12 14 16 18 , Amplification eN < 2 nV/VHi at 1 kHz PRINCIPAL DEVICES U320-2 2N 5432-34 J108-1Q J108-18-110-18 All of the


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Not Available

Abstract: No abstract text available
Text: tf 18 18 ns Rl 0.210(5.33) 0.170(4.32) 0.022(0.55) 0.014(0.36) I. B 3


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PDF T0-226AA
2002 - J108

Abstract: MMBFJ108
Text: , VGS = 0 108 109 110 mA mA mA 8.0 12 18 Small Signal Characteristics Cdg(on


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