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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

J1 TRANSISTOR Datasheets Context Search

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2N1305

Abstract:
Text: maximum diameter of the actual device. 9. All 3 leads. FIGURE 1. Physical dimensions of transistor types 2N1302 through 2N1309(TO-5). 3 MÏL-S-Î9500/126C GAGE OUTLINE OPTIONAL J1 TRANSISTOR REF, 1 —I , SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306 , Marking. The following marking specified in MIL-S-19500 may be omitted from the body of the transistor at , plane .054».001, -.000 (1.37+.03, -.00 mm) below the seating plane of the transistor , maximum diameter


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PDF MIL-S-19500/126C MIL-S-19500/126B 2N1302, 2N1304, 2N1306, 2N1308 2N1303, 2N1305, 2N1307, 2N1309 2N1305 J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1309 2N1303 transistor 2N1309 2N1306
2013 - SMD l33 Transistor

Abstract:
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar , BLU6H0410L(S)-600P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2 , )-600P NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , Power LDMOS transistor Table 7. RF characteristics Test signal: 2-Tone; Tcase = 25 C unless


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PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P SMD l33 Transistor
2011 - J346

Abstract:
Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 - 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , of 15 NXP Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 5. Thermal , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor Table 7. RF characteristics .continued RF


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PDF BLF884P; BLF884PS 86isclaimers BLF884P J346 UT-090C-25
2011 - Not Available

Abstract:
Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast , Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description , NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , reserved. 3 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor Table 7


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PDF BLF884P; BLF884PS BLF884P
2011 - 907 TRANSISTOR smd

Abstract:
Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 - 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , 2 of 16 NXP Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 5. Thermal , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor Table 7. RF characteristics .continued RF


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PDF BLF884P; BLF884PS BLF884P 907 TRANSISTOR smd
2012 - EZ 711 253

Abstract:
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 - 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar , Semiconductors BLU6H0410L(S)-600P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , Power LDMOS transistor 5. Thermal characteristics Table 5. Rth(j-c) Zth(j-c) Thermal characteristics , 15 NXP Semiconductors BLU6H0410L(S)-600P Power LDMOS transistor Table 7. RF


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PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P EZ 711 253 J1072 NXP amplifier smd transistor l32 ST EZ 711 253 UT-090C-25
2009 - BLF871

Abstract:
Text: BLF871 UHF power LDMOS transistor Rev. 02 - 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , ) BLF871 NXP Semiconductors UHF power LDMOS transistor I I I I I I I Integrated ESD , Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1


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PDF BLF871 BLF871 J1930
2012 - smd transistor l32

Abstract:
Text: BLF0510H6600P Power LDMOS transistor Rev. 1 - 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and , BLF0510H6600P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description , transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise , Semiconductors BLF0510H6600P Power LDMOS transistor 400 Coss (pF) 300 001aam579 200 100 0 0 20


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PDF BLF0510H6600P powe11 smd transistor l32 SMD EZ 648 001aan207 BLF0510H6600P
2009 - Not Available

Abstract:
Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 , Semiconductors UHF power LDMOS transistor Integrated ESD protection Excellent ruggedness High power gain , Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with


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PDF BLF871; BLF871S BLF871 BLF871S
2009 - 900 mhz av transmitter

Abstract:
Text: BLF871 UHF power LDMOS transistor Rev. 03 - 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , ) BLF871 NXP Semiconductors UHF power LDMOS transistor I I I I I I I Integrated ESD , Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1


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PDF BLF871 BLF871 900 mhz av transmitter D2140 DVB-T transistor amplifier of transistor C 4212 rogers 5880 TRANSISTOR GENERAL DIGITAL L6 uhf amplifier design Transistor
2010 - BLF871

Abstract:
Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 - 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , Semiconductors UHF power LDMOS transistor Integrated ESD protection Excellent ruggedness High power gain , Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with


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PDF BLF871; BLF871S BLF871 BLF871S 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871
2010 - Not Available

Abstract:
Text: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 , (4.3 MHz from center frequency) BLF871; BLF871S NXP Semiconductors UHF power LDMOS transistor , Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with


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PDF BLF871; BLF871S BLF871 BLF871S
2012 - SMD EZ 648

Abstract:
Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 - 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications , Semiconductors BLF988; BLF988S Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , NXP Semiconductors BLF988; BLF988S Power LDMOS transistor 5. Thermal characteristics Table 5 , Semiconductors BLF988; BLF988S Power LDMOS transistor Table 8. RF characteristics .continued RF


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PDF BLF988; BLF988S BLF988 SMD EZ 648 smd transistor l32 smd transistor l31 smd transistor L33 J15-12 J2151
2000 - MAX1669EVKIT

Abstract:
Text: monitors the temperature of an external diode-connected transistor and converts the temperature to an 8-bit, 2-wire serial data. A 2N3906 temperature-sensor transistor comes soldered to the board in a SOT23 package. Removing the transistor allows the board to connect through a twisted pair, to a remote diode , J1 1 J2, J3, JU1, JU2, JU3, JU5, JU7 JU4, JU6 DESCRIPTION 0.1µF, 16V X7R ceramic , 3 1 1 1 1 1 1 1 1 5 None 1 None 1 DESCRIPTION PNP bipolar transistor


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PDF MAX1669 MAX1669, 2N3906 MAX1669EVKIT P1 TRANSISTOR serial Parallel-Printer Interface IC mmbt3904 motorola EMK107BJ104KA CMPT3906 fdn359an circuit 2wire PC brushless fan MAX1669EVSYS
2008 - J0266

Abstract:
Text: BLF871 UHF power LDMOS transistor Rev. 01 - 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , Semiconductors BLF871 UHF power LDMOS transistor I I I I I I I Integrated ESD protection Excellent , December 2008 2 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 5. Thermal


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PDF BLF871 BLF871 J0266 001aaj288 J-0834 J1930
2013 - Not Available

Abstract:
Text: MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10 , Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu , unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for civilian and , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak


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PDF MAGX-000035-045000 DC-3500 MAGX-000035-045000
2011 - BLF888A

Abstract:
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 - 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast , ; BLF888AS NXP Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c , power LDMOS transistor Table 7. RF characteristics .continued RF characteristics in NXP


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PDF BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 transistor smd l33 L33 SMD
2011 - smd transistor L33

Abstract:
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 - 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , 2011 2 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 5. Thermal , Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor Table 7. RF characteristics .continued RF


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PDF BLF888A; BLF888AS BLF888A smd transistor L33 SMD l33 Transistor transistor smd l33
2000 - P1 TRANSISTOR

Abstract:
Text: kit. The MAX1669 also monitors the temperature of an external diode-connected transistor and converts the temperature to an 8-bit, 2-wire serial data. A 2N3906 temperature-sensor transistor comes soldered to the board in a SOT23 package. Removing the transistor allows the board to connect through a , 631-847-3236 303-675-2150 408-573-4159 805-446-4850 C2 J1 J2, J3, JU1, JU2, JU3, JU5, JU7 JU4, JU6 N1 P1 , Component List (continued) DESIGNATION QTY DESCRIPTION PNP bipolar transistor Fairchild MMBT3906, Central


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PDF MAX1669 MAX1669, 2N3906 MAX1669 P1 TRANSISTOR
2011 - smd transistor l31

Abstract:
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter , Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description , of 17 BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 5. Thermal , LDMOS transistor Table 7. RF characteristics …continued RF characteristics in NXP production


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PDF BLF888A; BLF888AS BLF888A smd transistor l31
2013 - Not Available

Abstract:
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 - 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , 2013 2 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 5. Thermal , BLF888A; BLF888AS UHF power LDMOS transistor Table 7. RF characteristics .continued RF


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PDF BLF888A; BLF888AS narrow15 BLF888A
1996 - AN1590

Abstract:
Text: board with Isolated Gate Transistors such as MOS or IGBTs (Isolated Gate Bipolar Transistor ) of up to a , J1 J1 UNI-2 J2 J2 Figure 1-1 Members of the Motor Control Kit This document , the microcontroller board will occur through one connector interface J1 . The definition of the , GND J1 J1 Reserved Reserved Reserved Reserved Reserved Reserved Reserved , Reserved Reserved1 J1 -5 V Fault -5 V Fault -5 V Fault -15 V1 +15 V -15 V


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PDF AN1590/D AN1590 AN1590 HC05MC4 IGBT motor DRIVER SCHEMATIC hcpl HP4504 single phase IGBT based PWM inverters OPTO HP4504 SCHEMATIC POWER SUPPLY WITH IGBTS opto isolation application note microcontroller based PWM inverters MPIC Motorola
1999 - abzd

Abstract:
Text: transistor , and converts these temperatures to 8-bit, 2-wire serial data. A 2N3904 remote temperature-sensor transistor comes soldered to the board in a SOT23 package, but for more realistic experiments, it can easily , Component List DESIGNATION QTY C1, C11, C13 C2 C12 J1 JU1, JU2 Q1 R1 R1 R2 R11, R12 R13, R14, R15 SW1 U1 , capacitor 4.7µF, 10V tantalum capacitor DB25 male right-angle connector 3-pin headers NPN transistor , capacitance from DXP to DXN. Use a good-quality, diode-connected, small-signal transistor . No MAX1617A


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PDF MAX1617A 2N3904 MAX1617 abzd sot 23 abzd
2013 - Not Available

Abstract:
Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter , ® Industrial applications BLF10H6600P; BLF10H6600PS NXP Semiconductors Power LDMOS transistor 2 , of 18 BLF10H6600P; BLF10H6600PS NXP Semiconductors Power LDMOS transistor 5. Thermal , ; BLF10H6600PS NXP Semiconductors Power LDMOS transistor Table 8. RF characteristics …continued RF


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PDF BLF10H6600P; BLF10H6600PS BLF10H6600P
2013 - Not Available

Abstract:
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast , BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 1.3 Applications ï , BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4 , UHF power LDMOS transistor Table 7. RF characteristics RF characteristics in NXP production


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PDF BLF888A; BLF888AS BLF888A
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