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LD3N

Abstract: 2N5434 2N5432
Text: G E SOLID STATE Dl DE I 3 6 7 5 0 6 1 PQlDTiS = 1 3875081 G E SOLID STATE 01E 10995 D 2 N 5 4 3 2 -2 N 5 4 3 4 T - 3 5 '- ¿ S ' 2N5432- 2N5434 N-Channel JFET Switch FEATUR ES · Low rdg(on) · Excellent Swltchlng · Low Cutoff Current AB SO LU TE MAXIMUM RATINGS (Ta = , -52 2N5432 2N5433 2N5434 ELECTRICAL CHARACTERISTICS Symbol Ig s s Parameter Gate Reverse Current Gate , 200 -4 2N5434 Min Max -2 0 0 -2 0 0 pA nA V pA nA V mA ohm mV ohm Units VGS= - 1 5 V ,V DS = 0 Ta


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PDF 2N5432- 2N5434 100mA 400mA LD3N 2N5434 2N5432
2N5434

Abstract: 2N5433 2N5432 2N5432-2 S01A
Text: 2N5434 2N5434 /W 2N5434 /D ELECTRICAL CHARACTERISTICS (25 °C unless otherwise specified) CHARACTERISTIC 2N5432 2N5433 2N5434 UNIT TEST CONDITIONS IVIIN MAX MIN MAX MIN MAX 'GSS Gate Reverse Current -200


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PDF 2N5432-2N5434 2N5432 2N5432/W 2N5432/D 2N5433 2N5433/W 2N5433/D 2N5434 2N5434/W 2N54ltage 2N5432-2 S01A
2N5434

Abstract: 2N5432 2N5433
Text: 2N5432/5433/5434 N-Channel JFETs Product Summary P a rt N um ber 2N5432 2N5433 2N5434 T em ic S e m i c o n d u c t o r s VGS(off) (V) - 4 to - 1 0 - 3 to - 9 - i to -4 r o s to n ) M a x ( Q ) 5 IiXoff) Typ ( p A ) 10 10 10 to N T y p (ns> 2.5 2.5 2.5 7 10 Features Low , 2N5432 2N5433 2N5434 Specifications3 Parameter Static Gate-Source Breakdow n Voltage G ate-Source , ) *Non-induf'tìve 2N5433 -12 V 143 Q 10 mA 2N5434 -12 V 140 Q 10 mA V q S(H) -12 V 145 0 10 mA _n_ V g


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/543 S-52424-- 14-Apr-97 2N5434
2n5432

Abstract: TO206AC 2N5433
Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N5432 2N5433 2N5434 v G S (o ff) (V) r D S (o n ) M a x ( Q ) 5 7 10 k x o ff) iy p (pa) 10 10 10 ton Typ (ns) 2.5 2.5 2.5 - 4 t o -1 0 - 3 to - 9 -1 t o - 4 FEATURES · · · · · Low , OTHERWISE NOTED) Limits 2N5432 2N5433 2N5434 Parameter Static Gate-Source Breakdown Voltage , 2N5434 -1 2 V 140» 10 mA 'N on-inductive INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/5433/5434) S-04028-- 04-Jun-01 2N5432 TO206AC
2N5434

Abstract: 2N543
Text: IN TER B14 F E T CORP 2bE D MfiEbflöfi QQQDEGla 7 -r~ 3 s '- z s2N5432, 2N5433, 2N5434 N -C H AN N EL SILICON JUNCTIO N FIELD-EFFECT TRANSISTOR · LOW O N RESISTANCE SWITCHES · CHOPPERS absolute maximum ratings at 25 °C free-air temperature Drain-Gate Voltage . Reverse Gate-Source Voltage , 2N5432 M in Mix -2 0 0 -2 0 0 2N5433 Min Mat -2 0 0 -2 0 0 -2 5 2N5434 Min M an -2 0 0 -2 0 0 -2


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PDF s2N5432, 2N5433, 2N5434 2N54331 2N5434I SMP5432 SMP5433, SMP5434 2N5434 2N543
1997 - Siliconix N-Channel JFETs

Abstract: 2N5432 2N5433 2N5434
Text: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 ­4 to ­10 5 10 2.5 2N5433 ­3 to ­9 7 10 2.5 2N5434 ­1 to ­4 10 10 2.5 Features Benefits Applications D D D , nA 2N5433 2N5434 Min Max Min Max Min Max ­25 ­25 ­25 Unit Static , Time Test Circuit VDD 2N5432 2N5433 2N5434 VGS(L) ­12 V ­12 V ­12 V RL* 145


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 Descri10 P-37407--Rev. Siliconix N-Channel JFETs 2N5433 2N5434
1999 - 2N5432

Abstract: No abstract text available
Text: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number 2N5432 2N5433 2N5434 VGS(off) (V) ­4 to ­10 ­3 to ­9 ­1 to ­4 rDS(on) Max (W) 5 7 10 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 2.5 2.5 2.5 Features D D D D D Low On-Resistance: 2N5432 <5 W Fast Switching-tON: 2.5 ns , 2N5432 2N5433 2N5434 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage , 2N5434 ­12 V 140 W 10 mA VGS(H) VGS(L) RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/5433/5434 2N5432 2N5433 S-52424--Rev.
1998 - 2N5434

Abstract: 5018 S 5018 X2N5434
Text: N-Channel JFET Switch CORPORATION 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) · Low rds(on) · Excellent Switching · Low Cutoff Current Gate-Source , . ORDERING INFORMATION Part G, C 5018 S D Package 2N5434 X2N5434 Hermetic TO-52 Sorted , Gate-Source Breakdown Voltage ID(off) MIN Drain Cutoff Current 2N5434 MAX -200 -200 -25 , 1MHz 2N5434 CORPORATION SWITCHING TIME, TEST CIRCUIT VDD RL = D VIN RG 50 VDD -


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PDF 2N5434 100mA 400mA -65oC 200oC -55oC 150oC 10sec) 300oC 2N5434 5018 S 5018 X2N5434
2N5434

Abstract: 2N5432 2N5433 teledyne crystalonics
Text: ULTRA LOW RON SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS 2N5432 2N5433 2N5434 GEOMETRY 445, PG. 58 • LOW Rds — 5 Ohms • LOW Cqd — 15 pfd ELECTRICAL DATA absolute maximum ratings parameter symbol units Drain to Gate Voltage BVdgo 25 Volts Gate to Source , CHARACTERISTICS: TA = 25°C (unless otherwise stated) parameters and conditions symbol 2n5432 2n5433 2n5434 , : 710-320-1196 2N5432 Thru 2N5434 CM 800 TYPICAL CHARACTERISTICS ON RESISTANCE VS. TEMPERATURE GATE LEAKAGE


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PDF 2N5432 2N5433 2N5434 2n5432 2n5433 2N5434 teledyne crystalonics
1997 - 2n5434

Abstract: 2n5432
Text: N-Channel JFET Switch CORPORATION 2N5432 ­ 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . , 30 2N5432 2N5433 2N5434 UNITS TEST CONDITIONS MIN MAX MIN MAX MIN MAX -200 -200 -200 pA VGS = -15V , % tested. 2N5432 ­ 2N5434 CORPORATION SWITCHING TIME, TEST CIRCUIT VDD VDD - VDS(ON) ID(ON) VOUT


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PDF 2N5432 2N5434 100mA 400mA -65oC 200oC -55oC 150oC 10sec) 300oC 2n5434 2n5432
2N5432

Abstract: 2N5434 5433 2N5433
Text: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 ­4 to ­10 5 10 2.5 2N5433 ­3 to ­9 7 10 2.5 2N5434 ­1 to ­4 10 10 2.5 Features Benefits Applications D D D , ­32 ­25 VGS(off) VDS = 5 V, ID = 3 nA 2N5433 Max Min Max 2N5434 Min Max , 2N5434 VGS(L) ­12 V ­12 V ­12 V RL* 145 W 143 W 140 W ID(on) 10 mA 10 mA


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 Descri10 S-52424--Rev. 2N5434 5433 2N5433
2001 - 2N5432

Abstract: 2N5433 2N5434
Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 ­4 to ­10 5 10 2.5 2N5433 ­3 to ­9 7 10 2.5 2N5434 ­1 to ­4 10 10 2.5 FEATURES BENEFITS , 2N5434 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage , 2N5434 VGS(L) ­12 V ­12 V ­12 V RL* 145 W 143 W 140 W ID(on) 10 mA 10 mA


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 S-04028--Rev. 04-Jun-01 2N5433 2N5434
1995 - 2N5432

Abstract: 2N5434 2N5433
Text: 2N5432/5433/5434 Siliconix NChannel JFETs Product Summary Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 -4 to -10 5 10 2.5 2N5433 -3 to -9 7 10 2.5 2N5434 -1 to -4 10 10 2.5 Features Benefits , Min Max 2N5434 Min Max Unit Static GateSource Cutoff Voltage Gate Operating , * 145 W 143 W 140 W ID(on) 10 mA 10 mA 10 mA VDD 2N5434 *Noninductive


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 P-37407--Rev. 2N5434 2N5433
2N5432

Abstract: 2n5432 equivalent 2N5433 2N5434
Text: C T 'S ilico n ix in c o r p o r a te d 2N5432 SERIES N-Channel JFETs PART NUMBER 2N5432 2N5433 2N5434 væ ' ) (V) -1 0 -9 -4 The 2N5432 Series offers the designer an alternative for true high performance analog switching applications. Good breakdown voltage characteristics coupled with low , A LIMITS 2N5433 2N5434 PARAMETER STATIC Gate-Source Breakdown Voltage Gate-Source Cutoff , ÌÌ 2N5434 10m A-12V 140U 30 4-18 Rev. A (02/11/91)


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PDF 2N5432 2N5433 2N5434 MIL-S-19500. -206A OT-23, 145X1 2n5432 equivalent
2005 - 2N5432

Abstract: 2N5433 2N5434
Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 ­4 to ­10 5 10 2.5 2N5433 ­3 to ­9 7 10 2.5 2N5434 ­1 to ­4 10 10 2.5 FEATURES BENEFITS , 2N5434 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage , 2N5434 VGS(L) ­12 V ­12 V ­12 V RL* 145 W 143 W 140 W ID(on) 10 mA 10 mA


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 08-Apr-05 2N5433 2N5434
Not Available

Abstract: No abstract text available
Text: 75 gfs TYPICAL DEVICE TYPES: E 40 ■2N5432 - 2N5434 , series 03t,flt,G2 0 0 0 4 0


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PDF 762mm) 0254mm) 2N5432 2N5434,
2N5432

Abstract: TO206AC
Text: Tem ic 2N5432/5433/5434 N-Channel JFETs Siliconix Product Summary P a rt N u m b er 2N5432 2N5433 2N5434 Vcsfoff) (V) - 4 to -1 0 - 3 to - 9 - 1 to - 4 r DS(on) M ax (Q ) 5 7 10 I d « .» ty P (PA> 10 10 10 toN Typ (ns) 2.5 2.5 2.5 Features · · · · · Low On-Resistance: 2N5432 <5 Q Fast Switching- toN: 2.5 ns High Off-Isolation- lD(off): 10 pA Low Capacitance: 11 pF Low Insertion Loss , Siliconix 2N5432/5433/5434 L im its 2N5432 2N5433 M in M ax 2N5434 M in M ax U nit Specifications3


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/5433/5434 P-37407--Rev. 2N5432 2N5433 TO206AC
Current Regulator Diodes

Abstract: NIP1CHP
Text: M ID * * 1 fT-Siliconix J .Æ in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE Single Single Single Single PACKAGE TO-92 (TO-226AA) SOT-23 TO-52 (TO-206AC) Chip · · · · J108, J109, J110 SST108, SST109, SST110 2N5432, 2N5433, 2N5434 Available as NIP1CHP, NIP2CHP, NIIP3CHP DEVICE TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage r DS ( il) 10 V G S(O FF) (V ) 100 I d (mA) Forward Transconductance & Output Conductance vs


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PDF O-226AA) OT-23 O-206AC) SST108, SST109, SST110 2N5432, 2N5433, 2N5434 Current Regulator Diodes NIP1CHP
2N5133

Abstract: 2N5121 2N6179 2N5130 2N6178 2N6181 2n5134 2N6180 2Ns401 2n5296 transistor
Text: DIGITRON ELECTRONIC CORP 3bE D H SflMatO? DDGDODti - Page #6 DIQITKON ELKTRONIQ QORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax No. 201-467-8065 JOHN J. SCHWARTZ ENGINEERING DIGITRON ELECTRONICS, CORP. 110 Hillside Avenue Springfield, NJ 07081 DGE BOOK: TRANSISTOR EDDITION: ISSUE DATE: Ref: No. TYPES TO BE ADDED 2N5006 2N5190 2N5432 2N5007 2N5191 2N5433 2N5008 2N5192 2N5434 2N5009 2N5193 2N5447 2N5010 2N5194 2N5448 2N5011 2N5195


OCR Scan
PDF 2N5006 2N5190 2N5432 2N5007 2N5191 2N5433 2N5008 2N5192 2N5434 2N5009 2N5133 2N5121 2N6179 2N5130 2N6178 2N6181 2n5134 2N6180 2Ns401 2n5296 transistor
Not Available

Abstract: No abstract text available
Text: 85 85 85 12 Ï6 12 16 12 16 -4 -1 -2 IT0206AA (T018), T0206AC (T052) 2N5432 2N5433 2N5434 r


OCR Scan
PDF 31ead) T0226AA PN4391 PN4392 PN4393 T0236 IT0206AA T0206AC 2N5432 2N5433
J2N5457

Abstract: MPF105 MPF103 MPF106 U1897E 2N4303 MPF104 J2N5458 2N4302 mpf102
Text: U1897E 40 0.2 30 — — 10 16 5 30 25 40 34507f 77 2N5434 25 0.2 30 - 0.2 4 30 15 10 5 36 34596E 121


OCR Scan
PDF 30779x MPF103 30882x MPF104 30783h MPF105 31330f MPF109 31334r MPF110 J2N5457 MPF106 U1897E 2N4303 J2N5458 2N4302 mpf102
1997 - 2N5432

Abstract: 2N5434 X2N5432-34 S 5018 2N5432-34 2N5433
Text: N-Channel JFET Switch LLC 2N5432 ­ 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) · Low rds(on) · Excellent Switching · Low Cutoff Current Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Gate-Drain Voltage . . . . . . . . . , (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5432 2N5433 2N5434 UNITS TEST , , 510-656-2900 PHONE, 510-651-1076 FAX DS009 REV A 2N5432 ­ 2N5434 LLC SWITCHING TIME, TEST CIRCUIT


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PDF 2N5432 2N5434 100mA 400mA -65oC 200oC -55oC 150oC 10sec) 300oC 2N5432 2N5434 X2N5432-34 S 5018 2N5432-34 2N5433
2009 - 2N5432

Abstract: 5433 2N5433 2N5434 SST108
Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 ­4 to ­10 5 10 2.5 2N5433 ­3 to ­9 7 10 2.5 2N5434 ­1 to ­4 10 10 2.5 FEATURES BENEFITS , 2N5434 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage , 2N5434 VGS(L) ­12 V ­12 V ­12 V RL* 145 W 143 W 140 W ID(on) 10 mA 10 mA


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PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 18-Jul-08 5433 2N5433 2N5434 SST108
2n5484 jfet

Abstract: 2N5486 vcr 2N5484 transconductance 2N5485 2N5485 75re 2n54 N-Channel 2N5486 2N5434 KS 40
Text: (25-c unless otherwise noted) PARAMETER 2N5434 2N5485 21M5486 UNITS TEST CONDITIONS MIN MAX


OCR Scan
PDF 2N5484-2N5486 2N5484 2N5484/W 2N5484/D 2N5485 2N5485/W 2N5485/D 2N5486 2N5486/W 2N5486/D 2n5484 jfet 2N5486 vcr transconductance 2N5485 75re 2n54 N-Channel 2N5434 KS 40
FET 2N5434

Abstract: 2N5432 2N5434 E-41
Text: = imhz gfs 75 120 250 ms vds - isv, vqs = o, i = ikhz TYPICAL DEVICE TYPES: 2N5432 - 2N5434


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PDF 762mm) 0254mm) FET 2N5434 2N5432 2N5434 E-41
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