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130098 TE Connectivity Ltd TERM PLASTI-GRIP
130094 TE Connectivity (130094) PIDG RING
130090 TE Connectivity (130090) PIDG RING TONGUE

J 13009 - 2 Datasheets Context Search

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DC power jack SWC

Abstract:
Text: REF 64a 1-19 -95 R H S w c T A K R J B ECN 42927 REVISION UPDATE 65 1-27- 09 p A T K J R C S M M J U b! L F 1-30-09 ECN 51752 TOLERANCE UNLESS OTHERWISE SPECIFIED DECIMALS .XX - .XXX mm MATL , /WITHDRAWAL FORCE: 1.0 - 12.0 POUNDS CONTACT SPRING RETENTION FORCE: 25 POUNDS MINIMUM WIRE ACCEPTABILITY: NOT , INTERPRETED PER ASME Y 14.5M - 1994 "fL STATION COMPANY CONFIDENTIAL EMERSON. Network Power Connectivity , , THREADED STUD,SOLDER LUG SHEET 2 OF 2 DRAWING NO. B- 108-0750-001


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j 13009

Abstract:
Text: 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J ^ co * ¥ - æ ^ * U 1 p m J a _ t £ 0 ^ ffl > : 1 , 'OS . a B H J P /N ^ F I L L E D 66NYL0N CUL 9 4 V - 0 ) B L A C K . CONTACT , O V mm* CAWG MATERIAL B 0 LTR R E V I S E D FJ 00- 0589-93 H . K Y . F REVISED J - 13009 , ± 0) N m ID ü re ; : * ' ^ - f a . . . Isa. O id / l \ t * *4 -fe . J » O Q z D z * (C IR C U IT N O .1) A * * ^ & : * ' J ^ V '


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PDF J-12583 30-JAN j 13009 J 13009 - 2 e 13009 f E 13009 L mj 13009 p 13009 13009R D 13009 K
Not Available

Abstract:
Text: ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL , PER ECO 0 9 - 0 1 9 9 1 2 HOUSING . 1 8 0 TYP [4 -5 7 ] [4 .6 0 ] 0 . 0 9 8 TYP [ 2 .4 9 , REE/11 100 [ 2 .5 4 ] WRAP TYPE POST 3 -H IG H (1- STABILIZER CONTACT ( - 2 , - 4 , - 6 , - 8 , OUTSIDE ROWS ONLY) /5' - 2 , 1 - - 4 , 1 - - 6 , WITH ALL 3 ROWS LULLY LOADED) 1 , - - 3 , 1 - - 5 , WITH ALL 3 ROWS LULLY LOADED) B B M55302/130-16 8.45 0 [21 4 . 6 3 ] . 2


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PDF 31MAR2000
2004 - 1044-06

Abstract:
Text: Supply Current mA Max 25 Min. Max. Typ. Aux. Min. Max. Voltage V 5.0 1117 - 1624.0 2.5 0.5 - 6.0 * applies to dual output VCO. Pin Connections Port RF OUT V-CC V-TUNE kg 10 14 2 103.0 - 142.0 -25.0 -8.0 , -48.49 -48.54 -48.60 -48.95 -49.13 -49.88 -48.93 Case Style - CK605 (inch,mm ) weight: 1 grams. A B C D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524 , 129.17 130.09 3.40 3.15 2.76 2.21 2.97 2.68 2.29 1.75 2.19 1.60 0.76 -0.87 -37.12 -36.84


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PDF ROS-EDR5368 Pu1543 1044-06
2009 - transistor j 13009-2

Abstract:
Text: Mini-Circuits' website at www.minicircuits.com/MCLStore/terms.jsp. REV. OR M114913 ZBSC-8-82+ ED- 13009 / 2 , ) Applications Coaxial Connections SUM PORT S(COM) PORT 1, 2 ,3,4,5,6,7,8 1, 2 ,3,4,5,6,7,8 · VHF/UHF , 0.9 1.5 1.8 2.8 M = mid range [10 fL to fU/ 2 ] 2.0 4.0 9.0 0.2 0.3 0.5 U = upper range [fU/ 2 to fU] Typical Performance Data Freq. (MHz) Insertion Loss (dB) S , 1.62 41.15 C .70 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ 2002/95/EC) M114913 ED-13009/2 transistor j 13009-2 13009-2 transistor 13009-2 j 13009-2 ZBSC-8-82-S ZBSC-8-82 D 13009 K transistor E 13009 M1149 transistor 13009
2006 - 12533 6

Abstract:
Text: Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB-10 Suggested PCB Layout (PL-012) 32X ø. 020 PTH FOR GROUND 13 14 A P 15 16 1 2 B 3 4 8 7 6 5 J D TYP N M S TYP R C , 2510 Pin Connections RF OUT VCC V-TUNE GROUND 10 14 2 1,3,4,5,6,7,8,9,11,12,13,15,16 Maximum , 1. TRACE WIDTH IS SHOWN FOR RF4 WITH DIELECTRIC THICKNESS . 030" ± .002"'; COPPER: 1/ 2 OZ. EACH SIDE. FOR OTHER MATERIALS TRACE WIDTH MAY NEED TO BE MODIFIED. 2 . BOTTOM SIDE OF THE PCB IS CONTINUOUS


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PDF ROS-2510-219+ CK605 2002/95/EC) 10KHz 100KHz 12533 6
2006 - Not Available

Abstract:
Text: Coaxial Connections SUM PORT PORT 1, 2 ,3,4,5,6,7,8 S(COM) 1, 2 ,3,4,5,6,7,8 Applications · VHF/UHF · , . 1.8 2.8 L = low range [fL to 10 fL] M = mid range [10 fL to fU/ 2 ] U = upper range [fU/ 2 to fU , 10.40 10.49 10.69 11.07 Insertion Loss (dB) S- 2 9.53 9.59 9.67 9.76 9.81 9.88 9.95 10.03 10.12 10.21 , 27.19 A 6.00 152.40 G .187 4.75 Outline Dimensions ( inch mm ) B 1.62 41.15 C .70 17.78 J .35 , ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com REV. OR M114913 ZBSC-8-82+ ED- 13009


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ M114913 ED-13009/2
2008 - Not Available

Abstract:
Text: : www.minicircuits.com REV. OR M114913 ZBSC-8-82+ ED- 13009 / 2 HY/TD/AM 080514 Mini-Circuits , . (1-9) (1-9) Maximum Ratings Coaxial Connections SUM PORT PORT 1, 2 ,3,4,5,6,7,8 S(COM) 1, 2 ,3,4,5,6 , [10 fL to fU/ 2 ] U = upper range [fU/ 2 to fU] Typical Performance Data Freq. (MHz) S-1 10.00 50.00 100.00 160.00 200.00 9.53 9.60 9.68 9.76 9.82 Insertion Loss (dB) S- 2 9.53 9.59 9.67 9.76 9.81 , 4.75 B 1.62 41.15 H 3.00 76.20 C .70 17.78 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ M114913 ED-13009/2
D 13009 K

Abstract:
Text: ] MIN H MIN MIN THK THK. PER QQ-N-290 REVI SED PER 0 0 1 0 - 0 2 7 6 - 9 4 REVI SED PER 0 0 1 0 - 0 3 , PER EC 0 G 5 2 - 7 4 - 9 8 7 / 8 /9 4 9 / 2 9 /9 4 8 - 11-95 1/ 11/96 09 SEP 93 SG SG PB RB , [3 4 2 0 } 75.2 8 [2.964] -7T 32 [ 2 9094 9 7 - 30 [ 2 9924 03.3 9 [2.495] C 106.47 102.45 150.49 , 29 20 4 9 - 8 4 7 4 9 POSN 4 9 4 9 14 A 2-119254-9 2 19254-8 2 19254-7 2 19254-6 2 , S I O N . AMP 175 S - 3 REV 3 -9 2 CONNECT OR, SIZE CAGE CODE AMP PACE . 1 5 6 x . 2 0 0 : D


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PDF QQ-N-290 amp34723/ D 13009 K J 13009 - 2 E 13009 L TR 670 9509
transistor d 13009

Abstract:
Text: (su s) M JE 1 3 00 8 M J E 13009 'C E V >E80 1 5 1 300 4 00 - Vdc m Adc mAdc *S/b - See Figure 1 See Figure 2 40 30 Vile 1 1.5 3 2 Vdc - - - 1.2 1.6 1.5 ·Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2 %. 3-959 MOTOROLA SC XSTRS/R F 12E D J b3b , XSTRS/R F D | b3b?2S4 OOflSMQfl 2 | MJE13008, MJE13009 T - 3 -3 - J 3 V O L T A G E R E Q , °c/w °c/w °c f t F fi H J K 1 N 0 R T II V z w STYLE 1. PIN 1 8A5E 2 .C0UECT0A lEWTTtfl 4


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PDF ti3ti725M MJE13008 MJE13009 transistor d 13009 transistor E 13009 n752 E13009 E 13009 e 13009 p E 13009 TRANSISTOR motorola J 13009 - 2 D 13009 K transistor switch 13009
2004 - Not Available

Abstract:
Text: Supply Current mA Max 15 Min. Max. Typ. Aux. Min. Max. Voltage V 3.3 120 - 150.0 0.0 0.5 - 5.0 * applies to dual output VCO. Pin Connections Port RF OUT V-CC V-TUNE kg 10 14 2 8.0 - 45.0 -13.0 GND , in Mini-Circuits · Prices and Specifications subjects to change without notice. ROS-ED9544/ 2 Freq , -38.56 -38.36 -38.14 -37.78 -38.56 -38.17 -38.34 Case Style - CK605 (inch,mm ) weight: 1 grams. A B C D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524


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PDF ROS-ED9544/2
2006 - Not Available

Abstract:
Text: 2510 Pin Connections RF OUT VCC V-TUNE GROUND 10 14 2 1,3,4,5,6,7,8,9,11,12,13,15,16 Maximum , METALLIZATION SOLDER RESIST Outline Dimensions ( inch mm ) A B C D E F G H J K L M N P Q R S T wt. .500 .500 , sheet are intended to be excluded and do not form a part of this specification sheet. 2 . Electrical , Page 1 of 2 Performance Data & Curves* V TUNE TUNE SENS (MHz/V) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 , -123.85 -125.33 -128.78 - 130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless mentioned otherwise


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PDF ROS-2510-219+ CK605 2002/95/EC)
2005 - transistor MJ 13009

Abstract:
Text: (sat)1 *VCE(sat) 2 *VCE(sat)3 *VCE(sat)4 - - 1 1.5 3 2 Base-Emitter Saturation Voltage , Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 2 /6 MICROELECTRONICS CORP. Electrical , (sus) 400 - - Vdc Collector Cutoff Current (VCEV=Rated Value, VBE(off)=1.5Vdc (VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100°C) ICEV - - 1 5 mAdc Emitter Cutoff Current (VEB=9Vdc, IC=0) IEBO - - 1 mAdc · Off Characteristics Collector-Emitter Sustaining Voltage


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PDF HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
2005 - E 13009

Abstract:
Text: =1.6Adc, TC=100°C) *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VCE(sat)4 - - 1 1.5 3 2 Base-Emitter , *VBE(sat) 2 *VBE(sat)3 - - 1.3 1.6 1.5 fT 4 - - MHz Cob - 180 - , MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P , Current-Continuous IE 18 Adc Emitter Current-Peak IEM 36 Adc 2 Watts 16 mW/°C 100 , HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 2 /6


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PDF HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 e13009 transistor E 13009 mj 13009 D 13009 K transistor d 13009 tr 13009 J 13009 - 2 j 13009
MCL 9603

Abstract:
Text: Layout (PL-012) J 12 11 10 13 8 7 15 6 16 5 F 1 2 3 32X ø. 020 PTH FOR GROUND J PACKAGE OUTLINE D TYP N 4 M B S TYP R T TYP H TYP K SQ TYP , 5 1.5 0.5 5 10 14 2 1,3,4,5,6,7,8,9,11,12,13,15,16 Permanent damage may occur if , DIELECTRIC THICKNESS . 030" ± .002"'; COPPER: 1/ 2 OZ. EACH SIDE. FOR OTHER MATERIALS TRACE WIDTH MAY NEED TO BE MODIFIED. 2 . BOTTOM SIDE OF THE PCB IS CONTINUOUS GROUND PLANE. DENOTES PCB COPPER LAYOUT


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PDF ROS-2510-219+ CK605 2002/95/EC) MCL 9603 21957 2539 p 13009 PL-012 ROS-2510-219
1996 - D 13009 K

Abstract:
Text: 900 MHz 2 Stage PA MRFIC2006 The MRFIC2006 is an Integrated PA designed for linear operation in , the MRFIC2006 include CT-1 and CT- 2 cordless telephones, remote controls, video and audio short range links, low cost cellular radios, and ISM band transmitters. 900 MHz 2 STAGE PA SILICON MONOLITHIC , Number. R2 Suffix = 2 ,500 Units per 12 mm, 13 inch Reel. · Device Marking = M2006 CASE 751-05 (SO , 6 GND GND 2 RF OUT (VCC2) 1 7 8 VCC1 Vbias Pin Connections and Functional


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PDF MRFIC2006/D MRFIC2006 MRFIC2006 MRFIC2006/D* D 13009 K M2006 MRFIC2004
ic 5772 b

Abstract:
Text: 2 - 5-0 V) RF Input Power Operating Ambient Temperature Storage and Junction Temperature Thermal Resistance, Junction to Case Symbol V c c i . VCC 2 Vbias 'CC1. 'CC2 Value 5.0 6.0 100 +21 5 3 - 8 VCC2 +10 - , U = d -^ D - C JL- 0 . 2 5 (0 .0 1 0 )® D F G J K M P R 0.40 1 25 1 27 BSC 0.18 , 900 MHz 2 S tage PA The MRFIC2006 is an Integrated PA designed for linear operation in the 800 MHz to , include CT-1 and CT- 2 cordless telephones, remote controls, video and audio short range links, low cost


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PDF MRFIC2006/D MRFIC2006 2PHX34801Q-0 22034E ic 5772 b
003W3SXX99A10

Abstract:
Text: + 0.12 - 0.13 1 31.19 16.79 25.00 + 0.12 - 0.13 2 39.52 24.79 33.30 + 0.15 - 0.10 2 39.52 25.12 33.30 + 0.15 - 0.10 6.12 3 53.42 38.50 , 16.79 25.00 + 0.12 - 0.13 2 39.52 24.79 33.30 + 0.15 - 0.10 2 39.52 , 16.46 25.00 + 0.12 - 0.13 1 31.19 16.79 25.00 + 0.12 - 0.13 2 39.52 24.79 33.30 + 0.15 - 0.10 2 39.52 25.12 33.30 + 0.15 - 0.10 6.12 3 53.42


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2004 - 13009 TRANSISTOR equivalent

Abstract:
Text: Characteristic Off State Drain Current (VDS = 3.5 Vdc, VGS = - 2 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - , Output Power 100 10 PROBABILITY ( % ) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) (dB , EFFICIENCY ( % ) 14 G ps , POWER GAIN (dB) 40 +ACPR @ 3.84 MHz BW 2 MHz f, FREQUENCY (MHz) Span , 160.01 - 163.32 MOTOROLA RF DEVICE DATA MRFG35030R5 7 Table 2 . Class AB Common Source S - , DIMENSIONS G B 1 B (FLANGE) J 3 2 4X Q M aaa T A M B M NOTES: 1


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PDF MRFG35030R5/D MRFG35030R5 MRFG35030R5 MRFG35030R5/D 13009 TRANSISTOR equivalent transistor d 13009
2000 - High Voltage Bus-bars

Abstract:
Text: 11.39 (odd only) 3 2 10 7 5 3 30 · l 3.4 1.9 1.0 0.5 0.35.0.1 % of input current at the fundamental , level 1 2 3 4 x Open circuit test voltage kV 0.5 1 2 4 special U 13009 t Fig. 9 Surge , clamp (only if cables are longer than 3 m), ± 2 kV, 5 kHz, capacitive clamp (only for process control and according to EN) ± 2 kV, 5 kHz, direct injection A EMC Performance criterion Table 2 : Generic EMC , interruptions 1 ±0.5 kV line to earth, ±0.5 kV line to line ± 2 kV line to earth, ±1 kV line to line 3 V


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2005 - MC13892

Abstract:
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2 , 3/2005 Gallium Arsenide PHEMT , Gate-Source Voltage VGS -5 Vdc RF Input Power Pin 37 dBm Tstg - 40 to +175 °C Tch 175 °C TC - 20 to +90 °C Symbol Value Unit RJC 1.9 °C/W , Range Table 2 . Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. For , Typ Max Unit Off State Drain Current (VDS = 3.5 Vdc, VGS = - 2 Vdc) IDSO - 15


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PDF MRFG35030R5 MC13892 MC13892 transistor d 13009 transistor z4 30 FET GAAS marking a H 9832 MRFG35030R5 MRFG35030 mc13892 schematic MARKING Z7 fet 6679
2005 - 13009 TRANSISTOR equivalent

Abstract:
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2 , 3/2005 Gallium Arsenide PHEMT , Input Power Pin 37 dBm Tstg - 40 to +175 °C Tch 175 °C TC - 20 to +90 , Range Channel Temperature (1) Operating Case Temperature Range Table 2 . Thermal , Drain Current (VDS = 3.5 Vdc, VGS = - 2 Vdc) IDSO - 15 425 µAdc Off State Current , - dB Drain Efficiency D 17 21 - % ACPR - -41 -36 dBc -


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PDF MRFG35030R5 13009 TRANSISTOR equivalent transistor d 13009 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350
2004 - 13009 TRANSISTOR equivalent

Abstract:
Text: Min Typ Max Unit Off State Drain Current (VDS = 3.5 Vdc, VGS = - 2 Vdc) IDSO - , 3.55 GHz 2 MHz Span 20 MHz PEAK-TO-AVERAGE (dB) f, FREQUENCY (MHz) Figure 5. CCDF W - , Semiconductor, Inc. Table 2 . Class AB Common Source S - Parameters at VDD = 12 Vdc, IDQ = 650 mA S11 S21 , 127.45 0.68 130.09 2.15 0.89 61.07 1.62 - 94.66 0.02 - 135.04 0.65 , : www.freescale.com MRFG35030R5 7 Freescale Semiconductor, Inc. Table 2 . Class AB Common Source S -


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PDF MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 transistor E 13009 4221 motorola transistor transistor d 13009 MRFG35030 transistor E 13009 equivalent D55342M07B10J0R MRFG35030R5
ic 5219 8mm

Abstract:
Text: gain Q1 : |S21e|z = 9.0 dB TYP. @f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2 : |S21 e|z = 8.5 dB TYP. @f = 2 GHz, V ce = 3 V, Ic = 10 mA · · 6-pin thin-type sm all mini mold package 2 different transistors on-chip (2SC 4226,2SC 4959) o' o o - CM C\ J 1= 1 GHz, V c e = 3 V , Ic = 7 mA ! = 2 GHz, V ce = , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6 , (Q1 and Q2) for low noise amplification in the VHF band to UHF band. PACKAGE DRAWINGS (Unit:mm) 2


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2005 - 13009 TRANSISTOR equivalent

Abstract:
Text: BW D , DRAIN EFFICIENCY ( % ) +ACPR @ 3.84 MHz BW Center 3.55 GHz 2 MHz f, FREQUENCY (MHz , PACKAGE DIMENSIONS G B 1 bbb M T A R (LID) M B M B (FLANGE) S (INSULATOR) J 3 2 K 2X D , Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2 , 3/2005 Gallium Arsenide PHEMT RF , Value 15 79 0.53 -5 37 - 40 to +175 175 - 20 to +90 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2 . Thermal Characteristics Characteristic Thermal Resistance, Junction


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PDF MRFG35030R5 13009 TRANSISTOR equivalent MRFG35030 transistor d 13009
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