The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HV110-SM02-Q HV110-SM02-Q ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for HVAC ±125 to ±2.5K Pa (±0.5 to ±10 inH2O) - Quarter Tape & Reel, SON-11, SM02 Datasheet
SP160-SM02-Q SP160-SM02-Q ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Quarter Tape & Reel, SON-11, SM02 Datasheet
ND015D-SM02-M ND015D-SM02-M ECAD Model Superior Sensor Technology Multi-Range Differential Pressure Sensor ±1 to ±15 psi (±0.1 to ±1 Bar) - Multi Tray, SON-11 Datasheet
ND060D-SM02-M ND060D-SM02-M ECAD Model Superior Sensor Technology Multi-Range Differential Pressure Sensor ±10 to ±60 psi (±0.7 to ±4.1 Bar) - Multi Tray, SON-11 Datasheet
ND150D-SM02-M ND150D-SM02-M ECAD Model Superior Sensor Technology Multi-Range Differential Pressure Sensor ±50 to ±150 psi (±3.4 to ±10.3 Bar) - Multi Tray, SON-11 Datasheet
ND030A-SM02-M ND030A-SM02-M ECAD Model Superior Sensor Technology Absolute Pressure Sensor 30 psia (2.1 Bar) - Multi Tray, SON-11 Datasheet

International Semiconductor Datasheets Context Search

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1997 - UART pdfs

Abstract: SC11016 SC11028
Text: International Semiconductor Technologies ( IST) are covered by the warranty and patent indemnification , . ©1997 INTERNATIONAL SEMICONDUCTOR TECHNOLOGIES 1060 N.Fifth St, San Jose, CA 95112, USA Tel ( 408 , :// (3 of 3)5/11/2004 7:16:11 PM International Semiconductor


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PDF SC11016 12A/103 com/pdfs/Modem/IST/11016-1 UART pdfs SC11028
International Semiconductor

Abstract: lt 908
Text: INTERNATIONAL SEMICOND 4^E ] > ^D0037fl 0 Q 0 0 H 1 3S2 BI ISE M International Semiconductor , In c . , INTERNATIONAL SEMICOND 4C JE D TOOOaTfi 0000110 41b B I S E N A K Â International Semiconductor , In c 1 AMPERE SCHOTTKY BARRIER RECTIFIER SR120 thru SR180 V O LT A G E R ANG E 20 to 80 PRV C U R R EN T 1.0 Ampere FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 9 4 V -0 utilizing Flame Retardant Epoxy Molding Compound. · 1 ampere operation at TA = 75°C with


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PDF SR120 SR180 MILSTD-19500/228. DO-41 DO-401. MIL-STD-202, SR130 SR140 SR150 SR160 International Semiconductor lt 908
Not Available

Abstract: No abstract text available
Text: S . ~ International Semiconductor , Inc., ("ISI"), is a ~7 rapidly growing semiconductor company specializing in discrete components. ISi supplies a very wide range of high quality, competetively priced diodes, rectifiers, transistors, arrays, and assemblies Our , . 2 INTERNATIONAL SEMICONDUCTOR , INC. , , will gladly and the requirement is for There are seemingly many semiconductor manufacturers, but


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HVM12 diode

Abstract: diode HVM12 HVM05 HVM12 350 214B HVM08 HVM10 HVM12 HVM14 HVM15
Text:  International Semiconductor , Inc. HVM SERIES HIGH VOLTAGE POWER RECTIFIER FEATURES: High Power Avalanche Grade Silicon Epoxy Encapsulated Note: A variety of terminations are available. The distance between the end of the termination and the end of the epoxy package can be adjusted to customer requirements. r-"rù -— A —» T J 1.398/1.515 ^ ^ .67/. 71 t j 1.083/1.201 ^ " 35.5/38.5 * -4 * 17 , mA -25 mA Reverse Recovery Current INTERNATIONAL SEMICONDUCTOR , INC. ■^000370 OOOOflCH Q70 â–


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PDF HVM05 HVM08 HVM10 HVM12 HVM14 HVM15 HVM16 HVM12 diode diode HVM12 HVM12 350 214B
1N4146

Abstract: 1N4141 1N4144 1N4139 1N4142 9s25 1N4140 4626 1n4145 1N4143
Text:  INTERNATIONAL SEMICOND 41E D H 5~ TDDD37fl D00007D TOT «ISEN International Semiconductor , Ine- High Current Plastic Silicon Rectifiers 1N4139 thru 1N4146 FEATURES • High surge current capability • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 Utilizing Flame , Sales Office: 574 E. Alamo, #40 Chandler, AZ 85225 FAX (602) 497-8173 RD" INTERNATIONAL SEMICOND MTE D ■^000370 Q00DG71 1Mb »ISEM International Semiconductor , Inc. RATING AND CHARACTERISTIC CURVES


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PDF TDDD37fl D00007D 1N4139 1N4146 D0-201-AD MIL-STD-19500/228 MIL-STD-202. 1N4146 1N4141 1N4144 1N4142 9s25 1N4140 4626 1n4145 1N4143
International Semiconductor

Abstract: No abstract text available
Text: INTERNATIONAL SEUICOND 4TE D T0DD37Ö DD0 D1 0 2 34T I S E M International Semiconductor , Ine V r-z3 -#^ _ HIGH CURRENT SILICON BRIDGE RECTIFIERS 10SB thru 35SB VOLTAGE RANGE 50 to 1000 Volt» CURRENT 10 to 35 Amperes FEATURES · Electrically Isolated Metal Case for Maximum , INTERNATIONAL SEIUCOND MRE » ^GGG37fl GGG01G3 Bflb ISEM 7 ^ ä 3 - 0 7 International Semiconductor , Inc . RA TM t AHO CMA«ACT(attT*C ClHIVIS OutMl M*IXTvJ C A M TluHlAiyil N ttH TW IM U


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PDF T0DD37Ö International Semiconductor
Not Available

Abstract: No abstract text available
Text: - I N TE T E RN R NAT ATIONAL SEMICOND T -0 3 -IS MÌE D T D G 0 3 7 Ô 0 0 0 0 1 1 2 2*^ M I S E N International Semiconductor , Ine 3 AMPERE SCHOTTKY BARRIER SILICON RECTIFIERS SR320 thru SR380 VOLTAGE RANGE 20 io 80 PRV CURRENT FEATURES · High surge , 85225 Phone (602) 497-8172 FAX (602) 497-8173 S R D -3 INTERNATIONAL SEMICOND 4TE T > U TüüQBTfl 0000113 12S «¡ISEM « a International Semiconductor , Inc. SURGE CURRENT T-o 2 > - ¡ S


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PDF SR320 SR380 D0-201 MIL-STD19500/228.
MCL1301

Abstract: E202 MCL1304 E-501 MCL1302 E-202 MCL1300 e-352 E-452 e501
Text:  International Semiconductor , Inc. CURRENT REGULATOR DIODES MCL1300 thru MCL1304 A CRD is a Field Effect Diode which supplies constant current to an electronic circuit, even when power supply voltage fluctuations or load impedance changes occur. A CRD is used for current stabilization and current limiting. ■DO-35 Package ■High Source Impedance ■Constant Current Over Wide Voltage Range â , <1) o o _£Z o c CL .01 INTERNATIONAL SEMICONDUCTOR , INC. ■T00037Û D000Ô54 DIM ■370


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PDF MCL1300 MCL1304 DO-35 MCL1300 MCL1301 MCL1302 MCL1304 TDDD37fi E202 E-501 E-202 e-352 E-452 e501
DL4933

Abstract: DL4934 DL4935 DL4936 DL4937 DLFR106 DLFR107
Text:  International Semiconductor , Inc. SURFACE MOUNT - FAST RECOVERY 1.0 Amp SILICON RECTIFIER DIODE DL4933 thru DL4937 DLFR106 and DLFR107 FEATURES: ■Plastic material has Underwriters Laboratory Flammability Classification 94 V-0 ■Low Leakage ■Glass Passivated Junction ■Ideal for printed circuit board applications ■Exceeds environmental standards of MIL-S-19500 MECHANICAL DATA: CASE , TEST CIRUIT DIAGRAM INTERNATIONAL SEMICONDUCTOR , INC. m TDDD37Û QD007S1 424 â–


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PDF DL4933 DL4937 DLFR106 DLFR107 MIL-S-19500 MIL-STD-202, TDDD37Ã QD007S1 DL4933 DL4934 DL4935 DL4936 DL4937 DLFR107
15B8

Abstract: 15U200 15U8 15U8A 1N6269 QGQ0157 equivalent ZO 607 15u30
Text:  INTERNATIONAL SEMICOND MRE » International Semiconductor , Ine. T0DD37Ô 0Q0D12b ñà , 1N6288A 15U51A 48.5 53.6 1.0 43.6 5.0 21.4 70.1 0.102 INTERNATIONAL SEMICONDUCTOR , INC. INTERNATIONAL , SEMICONDUCTOR , INC. INTERNATIONAL SEMICOND MIE 3> 1000370 0000121 Sia «ISEM FIGURE 1 - PULSE RATING CURVE , -2 INTERNATIONAL SEMICON» 4<ÎE T> M ■iDGGBTÔ QGQ0157 71T MUE M T-n »A3 1.6 kW TRANSIENT VOLTAGE SUPPRE8SORS , INTERNATIONAL PART NUMBER Breakdown Voltage Vbr (Volto) (Not» f) Mtn Max at 1« (ma) Working Peak Ravarie


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PDF T0DD37Ã 0Q0D12b 15B8 15U200 15U8 15U8A 1N6269 QGQ0157 equivalent ZO 607 15u30
DLSF11

Abstract: DLSF12 DLSF13 DLSF14 DLSF16 DLSF18
Text:  International Semiconductor , Inc. SURFACE MOUNT - SUPER FAST RECOVERY 1.0 Amp SILICON RECTIFIER DIODE DLSF11 thru DLSF18 FEATURES: ■Plastic material has Underwriters Laboratory Flammability Classification 94 V-0 ■Low Leakage ■Glass Passivated Junction ■Ideal for printed circuit board applications ■Exceeds environmental standards of MIL-S-19500 MECHANICAL DATA: CASE: Reliable low cost , TEST CIRUIT DIAGRAM INTERNATIONAL SEMICONDUCTOR , INC. ■^oaaaTa □□□□?ss d?t ■G


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PDF DLSF11 DLSF18 MIL-S-19500 MIL-STD-202, DLSF11 DLSF12 DLSF13 DLSF14 DLSF16 DLSF18
SRA820

Abstract: SRA830 SRA840 SRA850 SRA860
Text:  International Semiconductor Inc. SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 TO 60 Volts CURRENT - 8.0 Ampere SRA820 thru SRA860 MECHANICAL DATA CASE: JEDEC T0-220A, molded plastic case TERMINALS: Plated axial leads, solderable per MIL-S-202, Method 208 WEIGHT: 0.08 ounce, 2.24 grams MOUNTING POSITION: Any HANDLING PRECAUTIONS: None FEATURES ■Plastic Package carries Underwriters Laboratory , REVERSE VOLTAGE FIG. 6B - TYPICAL REVERSE CHARACTERISTICS INTERNATIONAL SEMICONDUCTOR , INC. 1GGG37fi


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PDF SRA820 SRA860 T0-220A, MIL-S-202, SRA820 SRA640 1GGG37fi SRA830 SRA840 SRA850 SRA860
SDB107

Abstract: SDB101 SDB102 SDB103 SDB104 SDB105 SDB106
Text:  International Semiconductor , Inc. 1.0 Amp GLASS PASSIVATED SURFACE MOUNT DIP BRIDGE FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V-0 Low Leakage Surge overload rating - 30 amperes peak Ideal for printed circuit board applications Exceeds environmental standards of MIL-STD 19500 MECHANICAL DATA: CASE: Reliable low cost construction utilizing transfer molding , 40 60 80 100 120 % of PIV - VOLTS INTERNATIONAL SEMICONDUCTOR , INC. TG0D37Ö GQOCHlb 111 ■"V56


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PDF MIL-STD-202, TG0D37Ã SDB107 SDB101 SDB102 SDB103 SDB104 SDB105 SDB106
Not Available

Abstract: No abstract text available
Text: INTERNATIONAL SEMICONDUCTOR INC. STA N D A R D R E C O V E R Y PLA S TIC S IL IC O N R E C T IF IE R S VOLTAGE - 50 TO 1000 Volts CURRENT - 3.0 Ampere FEATURES Plaslic Package carries Underwriters Laboratory Flammability Classification 94V-0 Low cost construction utilizing void-free transfer m olding , INSTANTANEOUS FORWARD CHARACTERISTICS FIGURE S MAXIMUM NON REPETITIVE SURGE CURRENT INTERNATIONAL SEMICONDUCTOR , INC. " 10 003 70 000034*1 145


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PDF D0-201 TG0G37Ô
LCE10

Abstract: LCE10A LCE11 LCE11A LCE12 LCE12A LCE170A 165 1M7
Text:  International Semiconductor , Inc. TRANSIENT VOLTAGE SUPPRESSORS LCE6.5 thru LCE170A 6.5 to 170 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE FEATURES This series employs a standard TVP in series with a rectifier with the same transient capabilities as the TVP. The rectifier is also , LCE33A 33 36.7 40.6 1.0 5.0 53.3 28.1 100 70.1 51 INTERNATIONAL SEMICONDUCTOR , INC. ■i 1DDD37 , 189 209 1.0 5.0 275 5.4 90 300 400 INTERNATIONAL SEMICONDUCTOR , INC. ■<iGGG37fl OOOOfl^ TIT â–


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PDF LCE170A LCE100 LCE100A LCE110 LCE110A LCE120 LCE120A LCE130 LCE130A LCE150 LCE10 LCE10A LCE11 LCE11A LCE12 LCE12A LCE170A 165 1M7
AR254

Abstract: ARS253 AR251 AR252 AR253 ARS251 ARS252 ARS254 HIGH CURRENT PLASTIC SILICON RECTIFIER
Text: -O H? INTERNATIONAL SEflICOND M^E D TGG037Ö ODODDñM ST4 ilSEM International Semiconductor , Ine. ARS/AR25 SERIES HIGH CURRENT PLASTIC SILICON RECTIFIER FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V-0 Low Leakage at elevated tempearture - 250 ua at 100 C , PEAK REVERSE VOLTAGE INTERNATIONAL SEMICONDUCTOR , INC. , MISER INTERNATIONAL SEMICOND J> — I - Or I HIGH CURRENT PLASTIC SILICON RECTIFIER - 25 AMPERES


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PDF TGG037Ã ARS/AR25 MIL-STD-202, AR254 ARS253 AR251 AR252 AR253 ARS251 ARS252 ARS254 HIGH CURRENT PLASTIC SILICON RECTIFIER
Not Available

Abstract: No abstract text available
Text: T -o f - n INTERNATIONAL SEMICOND MTE J > ■T0DD37Û 00DQD72 ÖÖ5 ■ISEM International Semiconductor , IncMINIATURE PLASTIC SILICON RECTIFIERS 1 N 4 2 4 5 thru 1 N 4 2 4 9 V O LT A G E RANGE 20 0 t o 1000 PKV C U R R EN T l . o A a t 55° FEATURES • • • â , e s O ffice: 574 E. Alamo, #40 Chandler, AZ 852 2 5 FAX (602) 497-8173 r d - 3 INTERNATIONAL SEMICOND MTE D ■TQQD37fi GQQGQ73 71^ * I S E M International Semiconductor , Ine. T-0\ -


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PDF T0DD37Ã 00DQD72 DO-41
Not Available

Abstract: No abstract text available
Text: INTERNATIONAL SEMICONDUCTOR , INC . SF11G thru SF18G S U P E R FAST R E C O V E R Y , G L A S S P A S S IV A TE D , P L A S T IC R E C T IF IE R S VOLTAGE - 50 TO 600 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES ■Plastic Package carries Underwriters Laboratory Flam mability Classification 9 4 V -0 C ase: JEDEC DO-41, molded plastic case ■Low cost construction utilizing , INTERNATIONAL SEMICONDUCTOR , INC. T00G37a D00CH2Q 120 FIG. 7 TYPICAL REVERSE CHA RACTERISTICS FIG


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PDF SF11G SF18G DO-41, IL-S-202, T00G37a D00CH2Q
18MM

Abstract: 35MM 6A05 P600
Text:  International Semiconductor , Inc. FAST RECOVERY PLASTIC SILICON RECTIFIERS VOLTAGE - 50 TO 1000 Volts CURRENT - 6.0 Ampere 6 AO 5 thru 6A10 FEATURES ■Plastic Package carries Underwriters Laboratory Flammability Classification 94V-0 ■Low cost construction utilizing void-free transfer molding technique ■Low forward voltage drop ■Diffused Junction ■Low reverse leakage ■High surge , OF CYCLES at 60 Hz FIG. 7 - MAXIMUM NON-REPETETIVE PEAK SURGE CURRENT INTERNATIONAL SEMICONDUCTOR


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PDF 2650C/10 18MM 35MM 6A05 P600
Not Available

Abstract: No abstract text available
Text: fV' j H ) INTERNATIONAL SEMICONDUCTOR , INC. 1N5817 thru 1N5819 SCHOTTKY BARRIER RECTIFIERS V O L T A G E - 20 TO 40 Volts C U R R E N T - 1.0 Ampere FEATURES M E C H A N IC A L D A TA 1 ■P la stic Package ca rrie s U n de rw riters L a bo ratory F la m m a b ility C la ssifica tio n 9 4 V -0 C a s e : JE D EC DO -41, m olded p la s tic case ■Low cost co n stru , CHARACTERISTICS INTERNATIONAL SEMICONDUCTOR , INC. ■c iDDD37fl 0000L53 IH O 31b â–


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PDF 1N5817 1N5819 1N5817 iDDD37fl 0000L53
EP16DT

Abstract: 16CT 16DT FEP16AT FEP16JT FEP16GT
Text:  International Semiconductor , Inc. SUPER FAST RECOVERY, GLASS PASSIVATED, PLASTIC RECTIFIERS VOLTAGE - 50 TO 400 Volts CURRENT - 16.0 Ampere FEP16AT thru FEP16JT MECHANICAL DATA CASE: JEDEC T0-220A, molded plastic case TERMINALS: Plated axial leads, solderable per MIL-S-202, Method 208 WEIGHT: 0.08 , Recovery Wave Form Fig. 7 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRUIT DIAGRAM INTERNATIONAL SEMICONDUCTOR , INC. ■^000370 00007bö 72fl â–


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PDF FEP16AT FEP16JT T0-220A, MIL-S-202, 00007bà EP16DT 16CT 16DT FEP16AT FEP16JT FEP16GT
Not Available

Abstract: No abstract text available
Text: INTERNATIONAL SEMICONDUCTOR , INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed ■G lass Passivated cavity-free junction ■H e rm e tica lly sea le d package T E R M IN A L S : Plated axial leads, so ld e ra b le per M IL-S -20 2, M , INTERNATIONAL SEMICONDUCTOR , INC ■T G 0 G 37 6 OGQOfc.17 3Ô5 ■/O ^ L .


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PDF 1N5059 1N5062 b-2233 1N5059
Not Available

Abstract: No abstract text available
Text: FM k \M g / ' INTERNATIONAL SEMICONDUCTOR , INC. 1N5391 thru 1N5399 M IN IA T U R E P L A S T IC S IL IC O N R E C T IF IE R S VOLTAGE - 50 TO 1000 Volts CURRENT - 1.5 Ampere FEATURES MECHANICAL DATA ■P lastic Package carries Underwriters Laboratory F lam m a bility C lassifica tion 9 4 V -0 C ase: JEDEC DO-41, molded p lastic case ■Low cost construction utilizing , REVERSE VOLTAGE FIG . 6 - TYPIC A L REVERSE C H A R A C T E R IS T IC S INTERNATIONAL SEMICONDUCTOR


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PDF 1N5391 1N5399 DO-41, 1N5391 T0DD37A DD0Gb27
6R600

Abstract: 6R1000 6R050 6R100 6R200 6R400 P600
Text:  INTERNATIONAL SEMICONDUCTOR , INC. FAST RECOVERY PLASTIC SILICON RECTIFIERS VOLTAGE - 50 TO 1000 Volts CURRENT - 6.0 Ampere 6R050 thru 6R1000 FEATURES ■Plastic Package carries Underwriters Laboratory Flammability Classification 94V-0 ■Low cost construction utilizing void-free transfer molding , EQUAL LEAD LENGTHS TO HEAT SINK INCHES 2 5 10 20 NUMBER OF CYCLES AT 60 Hz INTERNATIONAL SEMICONDUCTOR , INC. T00037A 0000353 b?3 â–


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PDF 6R050 6R1000 2650C/10 T00037A 6R600 6R1000 6R100 6R200 6R400 P600
Not Available

Abstract: No abstract text available
Text: INTERNATIONAL SEMICONDUCTOR INC. 1N1183A thru 1N1190AR , S IL IC O N P O W E R R E C T IF IE R S VOLTAGE - 100 to 600 Volts CURRENT - 40 Ampere Avg. M ECHANICAL CHARACTERISTICS Base Steel stud and base with a %-28 U N F-2A thread for through mounting on a heat sink. Nickel plating prevents corrosion. H eader Glass to metal construction. W e ig h t Approximately 0.9 ounces , 100 TIM E - In SECO NDS REVERSE VO LTAGE - Volts INTERNATIONAL SEMICONDUCTOR , INC. m


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PDF 1N1183A 1N1190AR DQ-203AB 1N1183A T00037Ã CI0D0557
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