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2004 - InGaAs HEMT mitsubishi

Abstract: transistor P7d MGF4957A Fet P7d
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT (Leadless , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT , June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT (Leadless , NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top Bottom Side RWUYW , InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VGS ID vs


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PDF June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d
fet transistor a03

Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G Unit:millimeters DESCRIPTION , MITSUBISHI ELECTRIC (1/6) MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G TYPICAL , 0 (m A ) MITSUBISHI ELECTRIC (2/6) MITSUBISHI SEMICONDUCTOR InGaAs HEMT , 30%. MITSUBISHI ELECTRIC (5/6) MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G , SEMICONDUCTOR InGaAs HEMT MGFC4419G OUTLINE DRAWING Fig. 1 Unit : um Chip Thickness


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PDF MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419
2003 - low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Text: MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High , ) MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS f (GHz) 3.0 4.0 5.0 6.0


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PDF MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A
2004 - Not Available

Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Requests Regarding Safety Designs Mitsubishi , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm 1 Gate 2 Source 3 Drain , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS f (GHz) 1.0 2.0 3.0 4.0 5.0 6.0


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PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz
2006 - InGaAs HEMT mitsubishi

Abstract: 4pin transistor top 205 MGF4934AM GD-30
Text: Feb./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin , ./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , > MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.25 0.65 0.30 , InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS ID vs. VGS , SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding


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PDF MGF4934AM MGF4934AM 12GHz InGaAs HEMT mitsubishi 4pin transistor top 205 GD-30
2006 - Not Available

Abstract: No abstract text available
Text: Dec./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin , MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S , NOISE InGaAs HEMT (4pin flat lead package) Fig.1 0.30 +0.1 -0.05 2.10 ±0.1 1.25 0.65 0.60 0.40 , SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL , ) Feb./2005 Dec./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs


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PDF MGF4934AM MGF4934AM 12GHz 3000pcs/reel
2007 - mgf4941al

Abstract: MITSUBISHI electric R22 GD-32
Text: MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS ID , MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID , NOISE InGaAs HEMT Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise , InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , NOISE InGaAs HEMT Fig.1 3.2±0.1 Top (0.30) 2.6±0.1 0.5±0.1 (0.30) Bottom (2.3


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PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32
mitsubishi ordering information

Abstract: MGF4955A InGaAs HEMT mitsubishi transistor P7d mitsubishi package
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT , June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 TOP SIDE RWUYW TWUXW BOTTOM b


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PDF June/2004 MGF4955A MGF4955A 12GHz 3000pcs mitsubishi ordering information InGaAs HEMT mitsubishi transistor P7d mitsubishi package
2006 - Not Available

Abstract: No abstract text available
Text: June/2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT , ½…/2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , /2006 June/2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT , ) June/2006 June/2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (VDS=2V,ID=10mA, Ta=25°C) Freq


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PDF MGF4953B MGF4953B 20GHz 3000pcs June/2006
2009 - MGF4963BL

Abstract: InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
Text: 16/Oct./2009 MITSUBISHI SEMICONDUTOR MGF4963BL SUPER LOW NOISE InGaAs HEMT , MITSUBISHI SEMICONDUTOR MGF4963BL SUPER LOW NOISE InGaAs HEMT Fig.1 3.2±0.1 (0.30 , MITSUBISHI SEMICONDUTOR MGF4963BL SUPER LOW NOISE InGaAs HEMT Requests Regarding Safety , SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS ID vs. VGS 50 VGS , FET> MGF4963BL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (Ta=25°C, VDS=2V, ID=10mA) Freq. (GHz


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PDF 16/Oct MGF4963BL MGF4963BL 20GHz 4000pcs InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
2004 - MGF4931AM

Abstract: GD-30 InGaAs HEMT mitsubishi
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin , MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig , /2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT , MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4931AM SUPER LOW NOISE InGaAs


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PDF June/2004 MGF4931AM MGF4931AM 12GHz GD-30 InGaAs HEMT mitsubishi
2006 - TRANSISTOR C 4460

Abstract: InGaAs HEMT mitsubishi MGF4953B MGF495
Text: N./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless , ) Nov./2006 N./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT , ./2006 N./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless , ./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS


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PDF MGF4953B MGF4953B 20GHz 3000pcs TRANSISTOR C 4460 InGaAs HEMT mitsubishi MGF495
GaAs FET HEMT Chips

Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet 5458 transistor a02 Transistor rf
Text: MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT DESCRIPTION The MGFC4453A , =12GHz - MITSUBISHI ELECTRIC (1/5) MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT , ELECTRIC (2/5) MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT TYPICAL , % MITSUBISHI ELECTRIC (4/5) MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT 2.0rdering , InGaAs HEMT TECHNICAL NOTE 1.Characteristics and quality assurance 1.1 Electrical


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PDF MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet 5458 transistor a02 Transistor rf
2004 - Not Available

Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , /2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT , June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT (Leadless , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4955A SUPER LOW NOISE InGaAs HEMT , InGaAs HEMT (Leadless Ceramic Package) Fig.1 TOP SIDE RWUYW ‰…ˆŒ TWUXW BOTTOM


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PDF June/2004 MGF4955A MGF4955A 12GHz 3000pcs
2004 - Not Available

Abstract: No abstract text available
Text: Apr./2004 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is , Apr./2004 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat , > MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 0.30 +0.1 0.05 2.10 ±0.1 1.25 , SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S Parameters


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PDF MGF4931AM MGF4931AM 12GHz
2006 - MGF4941AL

Abstract: MGF4941 GD-32
Text: ) Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT , InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , > MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS ID vs. VDS 50 V GS=-0.1V/STEP (Ta , > MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz , InGaAs HEMT S PARAMETERS (VDS=0V,VGS=0V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12


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PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32
2008 - GD-30

Abstract: No abstract text available
Text: Apr./2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin , ./2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , ./2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.30 ±0.05 (0.65) (0.65) 0.30 , ) MITSUBISHI (4/5) Apr./2008 MITSUBISHI SEMICONDUTOR MGF4934CM SUPER LOW NOISE InGaAs


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PDF MGF4934CM MGF4934CM 12GHz GD-30
2004 - Not Available

Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top Side RWUYW , SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , > MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS Freq (GHz) 1 , FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Requests Regarding


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PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A
2004 - MGF4951A

Abstract: MGF4952A
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT , InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) MITSUBISHI (3/5 , MITSUBISHI SEMICONDUCTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , /2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm 1 Gate 2 Source 3 Drain MITSUBISHI (2/5


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PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A
2007 - mitsubishi 7805

Abstract: MGF4934AM
Text: May/2007 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat , MITSUBISHI (1/5) May/2007 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs , -30) MITSUBISHI (2/5) May/2007 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs , InGaAs HEMT (4pin flat lead package) S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 , FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding Safety


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PDF May/2007 MGF4934AM MGF4934AM 12GHz 3000pcs/reel mitsubishi 7805
2004 - MGF4953A

Abstract: mgf4953 s2v 92 S2V40
Text: June/2004 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Requests Regarding Safety Designs Mitsubishi , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top 2.15 0.10 +0.20 Side A , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS Freq (GHz) 1 2 3 4 5 6 7 8 9 10


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PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A 12GHz MGF4953A mgf4953 s2v 92 S2V40
2007 - GD-30

Abstract: MGF4931AM 77153
Text: May/2007 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat , /2007 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , /2007 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 , > MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta


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PDF May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153
mgf4953a

Abstract: MGF4954A
Text:  MITSUBISHI SEMICONDUTOR M G F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility , ) June/2000 MITSUBISHI SEMICONDUTOR M G F4953A/M G F4954A SUPER LOW NOISE InGaAs HEMT , M G F4953A/M G F4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Top , NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) Id vs. Vds 4 .IS


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PDF F4953A/MG F4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A MGF4953A June/2000 MGF4954A
2004 - mgf4953a

Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top Side RWUYW TWUXW , SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS Freq (GHz) 1 2 3 4 5 6 7 , /MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Requests Regarding Safety Designs


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PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A mgf4953a mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
2004 - MGF4851A

Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless , /2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4851A SUPER LOW NOISE InGaAs HEMT , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4851A SUPER LOW NOISE InGaAs HEMT , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4851A SUPER LOW NOISE InGaAs HEMT , MITSUBISHI SEMICONDUCTOR MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package


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PDF June/2004 MGF4851A MGF4851A 12GHz 3000pcs
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