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IXFT12N50F datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFT12N50F IXFT12N50F ECAD Model IXYS 500V HiPerRF power MOSFET Original PDF

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2004 - ixfh12n50

Abstract: No abstract text available
Text: HiPerRFTM Power MOSFETs VDSS = ID25 = RDS(on) ≤ ≤ trr IXFH12N50F IXFT12N50F F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 500V 12A 400mΩ Ω 250ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΠ, power density DS98737B(02/04) IXFH12N50F IXFT12N50F Symbol Test Conditions (TJ = 25°C Unless


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PDF IXFH12N50F IXFT12N50F 250ns O-247 O-268 338B2 ixfh12n50
2004 - IXFH12N50F

Abstract: IXFT12N50F 500V12A
Text: IXFH12N50F IXFT12N50F HiPerRFTM Power MOSFETs VDSS = = ID25 RDS(on) trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 500V 12A 400m 250ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M 500 V VGSS , Advantages Space savings High power density DS98737B(02/04) IXFH12N50F IXFT12N50F Symbol Test


Original
PDF IXFH12N50F IXFT12N50F 250ns O-247 00A/s, 00A/s O-268 338B2 IXFH12N50F IXFT12N50F 500V12A
TO-264 weight

Abstract: No abstract text available
Text: High Switching Speed Power MOSFETs F-Class HiPerRFTM power MOSFET Type max. lyp. Tc = 25°C typ. PF max. nC max. W p Package style Fig. No. 6 10 6 10 6 10 6 10 11 7 11 7 12 6 10 6 6 11 7 11 7 11 ^D S S V b co n t) Tc = 25°C A DS(on) °» PD > New > IX F H 6 0 N 2 0 F IXFT60N20F > IXFH12N50F > IXFT12N50F IXFH21N50F > IXFT21N50F > IXFH28N50F IXFT28N50F IXFK44N50F > IXFX44N50F > IXFK55N50F > IXFX55N50F IXFN55N50F >· IXFH6N1 OOF n 0.038 0.038 0.40 0.40 0.25 0.25 0.19 0.19 0.12


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PDF IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight
2008 - 7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: No file text available


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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