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IXFR38N80Q2 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFR38N80Q2 IXFR38N80Q2 ECAD Model IXYS Electrically Isolated Back Surface Original PDF

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2008 - Not Available

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR38N80Q2 RDS(on) trr = = ≤ ≤ 800V 28A 240mΩ Ω 250ns (Electrically Isolated Back Surface) Symbol Test Conditions , © DS99203A(05/08) IXFR38N80Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs , IXFR38N80Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 , T C - Degrees Centigrade IXFR38N80Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 60


Original
PDF IXFR38N80Q2 250ns 38N80Q2 8-08-A
2008 - IXFR38N80Q2

Abstract: 38N80 ISOPLUS247
Text: HiPerFETTM Power MOSFET Q2-Class IXFR38N80Q2 VDSS ID25 RDS(on) trr = = 800V 28A 240m 250ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum , density nA 25 A 2 mA 240 m DS99203A(05/08) IXFR38N80Q2 Symbol Test Conditions (TJ = 25 , ,478 B2 7,071,537 7,157,338B2 IXFR38N80Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2 , 25 50 75 100 T C - Degrees Centigrade IXFR38N80Q2 Fig. 7. Input Admittance Fig. 8


Original
PDF IXFR38N80Q2 250ns 38N80Q2 8-08-A IXFR38N80Q2 38N80 ISOPLUS247
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