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IXYS Integrated Circuits Division
IXFQ50N60P3 N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-3P IXYS IXFQ50N60P3, EA IXFQ50N60P3 ECAD Model
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IXFQ50N60P3 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFQ50N60P3 IXFQ50N60P3 ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 50A TO3P Original PDF

IXFQ50N60P3 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - IXFH50N60P3

Abstract: IXFQ50N60P3 50N60P3
Text: IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V , IXFQ50N60P3 IXFH50N60P3 ns 20 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 , 45 VGS = 10V 8V 90 80 35 70 I D - Amperes 40 I D - Amperes IXFQ50N60P3 , Admittance IXFQ50N60P3 IXFH50N60P3 Fig. 8. Transconductance 80 120 TJ = - 40ºC 70 100 , Dimensions. 10 100 VDS - Volts 1,000 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 13


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PDF IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 O-268 50N60P3 IXFH50N60P3 IXFQ50N60P3
2012 - ixfh50n60

Abstract: 50N60P IXFT50N60P3 ixfh50n60p3
Text: Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 VDSS ID25 RDS(on) = , Reserved DS100310A(01/12) IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol Test Conditions (TJ = 25 , ,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFT50N60P3 IXFQ50N60P3 , © 2012 IXYS CORPORATION, All Rights Reserved IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 7. Input , IXFQ50N60P3 IXFH50N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal


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PDF IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 O-268 O-247 50N60P3 ixfh50n60 50N60P ixfh50n60p3
2012 - 50n60p

Abstract: No abstract text available
Text: IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 = 600V = 50A ≤ 145mΩ Ω RDS(on) N-Channel Enhancement , ) IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs , 7,157,338B2 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 1. Output Characteristics @ T J = 25ºC , 50 75 TC - Degrees Centigrade 100 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 7. Input , IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum


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PDF IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 O-268 T1000 IXFT50N60P3 50N60P3 50n60p
2011 - ixfh50n60

Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 DS100310 50N60P3 50n60 N-channel MOSFET to-247 50a 600v N-channel MOSFET to-247 50a
Text: Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 VDSS ID25 RDS(on) = , DS100310(03/11) IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise , IXFQ50N60P3 IXFH50N60P3 Fig. 1. Output Characteristics @ T J = 25ºC 50 45 40 35 VGS = 10V 7V 100 90 80 70 7V , © 2011 IXYS CORPORATION, All Rights Reserved IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 7. Input , IXFQ50N60P3 IXFH50N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal


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PDF IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 O-268 O-247 50N60P3 ixfh50n60 50n60p ixfh50n60p3 DS100310 50n60 N-channel MOSFET to-247 50a 600v N-channel MOSFET to-247 50a
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