The Datasheet Archive

SF Impression Pixel

Search Stock

IXYS Integrated Circuits Division
IXFP7N80P In a Tube of 50, IXFP7N80P N-Channel MOSFET, 7 A, 800 V HiperFET, Polar, 3-Pin TO-220 IXYS, TU IXFP7N80P ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
RS Components (2) IXFP7N80P Tube 0 50 - - $3.286 $3.286 $3.286 Buy Now
IXFP7N80P Package 0 5 - $4.305 $3.156 $2.54 $2.54 Buy Now

IXFP7N80P datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
IXFP7N80P IXFP7N80P ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 7A TO-220 Original PDF
IXFP7N80PM IXFP7N80PM ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 3.5A TO-220 Original PDF

IXFP7N80P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - IXFP7N80P

Abstract: 7N80 ixfa7n80p 7N80P
Text: IXFA7N80P IXFP7N80P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 800V = 7A 1.44 250ns TO , ) IXFA7N80P IXFP7N80P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic , IXFP7N80P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = , 25 50 75 TC - Degrees Centigrade 100 IXFA7N80P IXFP7N80P Fig. 8. Transconductance


Original
PDF IXFA7N80P IXFP7N80P 250ns O-263 7N80P 9-10-A IXFP7N80P 7N80 ixfa7n80p 7N80P
2010 - Not Available

Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA7N80P IXFP7N80P RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 800V = 7A ≤ 1.44Ω Ω ≤ 250ns TO , High Speed Power Switching Applications DS99597F(04/10) IXFA7N80P IXFP7N80P Symbol Test , ,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA7N80P IXFP7N80P Fig. 1 , 25 50 75 TC - Degrees Centigrade 100 IXFA7N80P IXFP7N80P Fig. 8. Transconductance


Original
PDF IXFA7N80P IXFP7N80P 250ns O-263 7N80P 9-10-A
2006 - IXFI7N80P

Abstract: IXFP7N80P IXFA7N80P 7N80P IXFI 7n80
Text: High power density DS99597E(08/06) IXFA7N80P IXFI7N80P IXFP7N80P Symbol Test Conditions , IXFP7N80P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 7 , 50 75 T C - Degrees Centigrade 100 125 150 IXFA7N80P IXFI7N80P IXFP7N80P Fig. 8


Original
PDF 7N80P O-263 O-220, O-220 IXFI7N80P IXFP7N80P IXFA7N80P 7N80P IXFI 7n80
2008 - IXTD08N100P-1A

Abstract: IXTQ22N60P DWS20-200A IXFH20N80P IXFK180N15P IXFH24N80P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: IXFN38N100P IXFP7N80P IXFP10N80P IXFH12N80P IXFH14N80P IXFH16N80P IXFH20N80P IXFH24N80P IXFN32N80P


Original
PDF
2006 - IXFP7N80PM

Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS(on) trr IXFP7N80PM (Electrically Isolated Tab) = = ≤ ≤ 800 3.5 1.44 250 V A Ω ns N-Channel Enhancement Mode , = 125°C 5.0 Features Ω DS99598E(08/06) IXFP7N80PM Symbol Test Conditions , ,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFP7N80PM Fig. 1. Output Characteristics @ 25ºC , Degrees Centigrade 100 125 150 IXFP7N80PM Fig. 8. Transconductance Fig. 7. Input


Original
PDF IXFP7N80PM IXFP7N80PM
2006 - IXFP7N80PM

Abstract: a1295
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS(on) trr IXFP7N80PM (Electrically Isolated Tab) = = 800 3.5 1.44 250 V A ns N-Channel Enhancement Mode Avalanche , DS99598E(08/06) IXFP7N80PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless , IXFP7N80PM Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 7 , -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXFP7N80PM Fig. 8


Original
PDF IXFP7N80PM IXFP7N80PM a1295
Supplyframe Tracking Pixel