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IXFP6N120P datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFP6N120P IXFP6N120P ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 6A TO-220AB Original PDF

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2011 - IXFA6N120P

Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P VDSS ID25 RDS(on) = 1200V , Rights Reserved IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise , ,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA6N120P IXFP6N120P IXFH6N120P Fig , IXFA6N120P IXFP6N120P IXFH6N120P Fig. 7. Input Admittance 10 9 8 7 11 10 9 8 TJ = - 40ºC Fig. 8


Original
PDF IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB O-247 6N120P IXFH6N120P IXFH6N120
2009 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A , ) IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified , IXFA6N120P IXFP6N120P IXFH6N120P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output , Centigrade 100 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 7. Input Admittance Fig. 8. Transconductance


Original
PDF IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P
2009 - HiperFET

Abstract: MOSFET 1200v 3a IXFA6N120P
Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A , DS100202A(11/09) IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions (TJ = 25°C, Unless , IXFA6N120P IXFP6N120P IXFH6N120P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output , Centigrade 100 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 7. Input Admittance Fig. 8. Transconductance


Original
PDF IXFA6N120P IXFP6N120P IXFH6N120P O-263 O-220AB 6N120P HiperFET MOSFET 1200v 3a IXFA6N120P
2011 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A , ) IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified , ,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA6N120P IXFP6N120P IXFH6N120P , Centigrade 100 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 7. Input Admittance Fig. 8. Transconductance


Original
PDF IXFA6N120P IXFP6N120P IXFH6N120P O-263 6N120P
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