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Littelfuse Inc
IXFP4N100P DISCMOSFETN-CH HIPERFET-POLA TO-220AB/FP / TUBE IXFP4N100P ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 IXFP4N100P Bulk 0 50 $2.54 $2.25 $1.7 $1.37 $1.27 More Info
Littelfuse Inc
IXFP4N100PM DISCMOSFETN-CH HIPERFET-POLA TO-220AB/FP / TUBE IXFP4N100PM ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 IXFP4N100PM Bulk 0 50 $4.32 $3.83 $2.89 $2.33 $2.16 More Info
IXYS Corporation
IXFP4N100P Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220-3 IXFP4N100P ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Transfer Multisort Elektronik IXFP4N100P 98 50 $2.08 $1.66 $1.49 $1.49 $1.49 More Info
IXYS Corporation
IXFP4N100PM Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm:8A; 40W IXFP4N100PM ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Transfer Multisort Elektronik IXFP4N100PM 100 50 $3.53 $2.8 $2.53 $2.53 $2.53 More Info

IXFP4N100P datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFP4N100P IXFP4N100P ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 4A TO-220 Original PDF

IXFP4N100P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - MOSFET IXYS TO-220

Abstract: 4N100
Text: Preliminary Technical Information IXFA4N100P IXFP4N100P PolarTM Power MOSFET HiPerFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V , Robotics and servo controls 10 A 750 A 3.3 DS99921(10/08) IXFA4N100P IXFP4N100P Symbol , IXFA4N100P IXFP4N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ , IXFA4N100P IXFP4N100P Fig. 7. Input Admittance Fig. 8. Transconductance 5.0 5.0 4.5 4.5


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PDF IXFA4N100P IXFP4N100P O-263 4N100P MOSFET IXYS TO-220 4N100
2010 - Not Available

Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA4N100P IXFP4N100P RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 4A ≤ 3.3Ω Ω TO-263 AA (IXFA , Drives Robotics and Servo Controls DS99921A(7/10) IXFA4N100P IXFP4N100P Symbol Test Conditions , ,338B2 IXFA4N100P IXFP4N100P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output , 75 TC - Degrees Centigrade 100 IXFA4N100P IXFP4N100P Fig. 7. Input Admittance Fig. 8


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PDF IXFA4N100P IXFP4N100P O-263 O-220AB 4N100P
2010 - IXFA4N100P

Abstract: IXFP4N100P 4n100 478B2
Text: IXFA4N100P IXFP4N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 4A 3.3 TO-263 AA (IXFA , DS99921A(7/10) IXFA4N100P IXFP4N100P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified , IXFA4N100P IXFP4N100P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output , 75 TC - Degrees Centigrade 100 IXFA4N100P IXFP4N100P Fig. 7. Input Admittance Fig. 8


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PDF IXFA4N100P IXFP4N100P O-263 4N100P IXFA4N100P IXFP4N100P 4n100 478B2
2010 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFP4N100PM RDS(on) = 1000V = 2.5A ≤ 3.3Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast , (11/10) IXFP4N100PM Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified , ,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP4N100PM Fig. 1. Output , 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP4N100PM Fig. 7


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PDF IXFP4N100PM 4N100P 1-22-10-A
2010 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25 RDS(on) = 1000V = 2.5A 3.3 , © 2010 IXYS CORPORATION, All Rights Reserved DS100295(11/10) IXFP4N100PM Symbol Test Conditions , ,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP4N100PM Fig. 1. Output Characteristics @ T J = , TC - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved IXFP4N100PM Fig. 7


Original
PDF IXFP4N100PM 4N100P 1-22-10-A
2013 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 2.1A  3.3  N-Channel Enhancement Mode Avalanche Rated Fast , and Servo Controls DS100295A(07/13) IXFP4N100PM Symbol Test Conditions (TJ = 25C Unless , 6,771,478 B2 7,071,537 7,157,338B2 IXFP4N100PM Fig. 1. Output Characteristics @ TJ = 25ºC , -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP4N100PM Fig. 7. Input Admittance


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PDF IXFP4N100PM 4N100P 7-03-13-B
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