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IXFP180N10T2 TO-220 IXFP180N10T2 ECAD Model
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Karl Kruse GmbH & Co KG IXFP180N10T2 5,000 - - - - - More Info

IXFP180N10T2 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFP180N10T2 IXFP180N10T2 ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 180A TO-220 Original PDF

IXFP180N10T2 Datasheets Context Search

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2014 - IXFA180N10T2

Abstract: No abstract text available
Text: IXFA180N10T2 IXFP180N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on , IXFP180N10T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min , IXFP180N10T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = , IXFP180N10T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 160 180 140 TJ = - 40ºC , . 1 10 VDS - Volts 100 IXFA180N10T2 IXFP180N10T2 Fig. 13. Resistive Turn-on Rise Time vs


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PDF IXFA180N10T2 IXFP180N10T2 O-263 O-220AB 180N10T2 IXFA180N10T2
2010 - IXFA180N10T2

Abstract: ixf180n10t2 IXFA180N10
Text: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET IXFA180N10T2 IXFP180N10T2 , , All Rights Reserved DS100266(05/10) IXFA180N10T2 IXFP180N10T2 Symbol Test Conditions (TJ = 25 , IXFP180N10T2 Fig. 1. Output Characteristics @ T J = 25ºC 180 160 140 120 VGS = 15V 10V 9V 8V 7V 350 300 250 , CORPORATION, All Rights Reserved IXFA180N10T2 IXFP180N10T2 Fig. 7. Input Admittance 200 180 160 140 160 , Dimensions. IXFA180N10T2 IXFP180N10T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature RG


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PDF IXFA180N10T2 IXFP180N10T2 O-263 180N10T2 ixf180n10t2 IXFA180N10
2010 - IXFA180N10T2

Abstract: IXFP180N10T2 180N10T2 ixf180n10t2
Text: Preliminary Technical Information IXFA180N10T2 IXFP180N10T2 TrenchT2TM HiperFETTM Power , High Speed Power Switching Applications DS100266A(09/10) IXFA180N10T2 IXFP180N10T2 Symbol , ,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA180N10T2 IXFP180N10T2 , IXFP180N10T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 160 180 140 TJ = - 40ºC , IXFA180N10T2 IXFP180N10T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 50 55 VDS =


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PDF IXFA180N10T2 IXFP180N10T2 O-263 O-220AB 180N10T2 IXFA180N10T2 IXFP180N10T2 180N10T2 ixf180n10t2
2012 - IXFA180N10T2

Abstract: No abstract text available
Text: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFA180N10T2 IXFP180N10T2 RDS(on , IXFP180N10T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min , ,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA180N10T2 IXFP180N10T2 Fig. 1 , 50 75 TC - Degrees Centigrade 100 125 150 175 IXFA180N10T2 IXFP180N10T2 Fig. 8 , IXFA180N10T2 IXFP180N10T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14


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PDF IXFA180N10T2 IXFP180N10T2 O-263 180N10T2 IXFA180N10T2
2012 - nf 931 diode to220

Abstract: IXFA180N10T2
Text: TrenchT2TM HiperFETTM Power MOSFET IXFA180N10T2 IXFP180N10T2 VDSS ID25 RDS(on) = 100V = , DS100266B(05/12) IXFA180N10T2 IXFP180N10T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise , ,771,478 B2 7,071,537 7,157,338B2 IXFA180N10T2 IXFP180N10T2 Fig. 1. Output Characteristics @ T J = , TC - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved IXFA180N10T2 IXFP180N10T2 , Right to Change Limits, Test Conditions, and Dimensions. IXFA180N10T2 IXFP180N10T2 Fig. 13


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PDF IXFA180N10T2 IXFP180N10T2 O-263 O-220AB 180N10T2 nf 931 diode to220
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