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IXYS Corporation
IXFN360N10T MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes IXFN360N10T ECAD Model
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Newark element14 IXFN360N10T Bulk 7 1 $20.99 $19.08 $16.21 $13.83 $13.83 Buy Now
TME Electronic Components IXFN360N10T 60 10 $19.2 $15.25 $15.25 $15.25 $15.25 Buy Now
Schukat electronic IXFN360N10T 28 1 €16.5 €12.5 €12.05 €12.05 €12.05 Buy Now
element14 Asia-Pacific IXFN360N10T 9 1 $31.4 $28.55 $24.27 $24.27 $24.27 Buy Now
Farnell element14 IXFN360N10T 17 1 £17.13 £14.4 £12.07 £10.82 £10.82 Buy Now
IXYS Integrated Circuits Division
IXFN360N10T IXFN360N10T N-Channel MOSFET, 360 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227 IXYS, EA IXFN360N10T ECAD Model
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RS Components (2) IXFN360N10T Bulk 0 1 $21.68 $18 $17.64 $17.64 $17.64 Buy Now
IXFN360N10T Tube 0 10 - $19.9 $19.9 $19.9 $19.9 Buy Now

IXFN360N10T datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFN360N10T IXFN360N10T ECAD Model IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 360A SOT-227B Original PDF

IXFN360N10T Datasheets Context Search

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2009 - IXFN360N10T

Abstract: No abstract text available
Text: GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFN360N10T = = ≤ ≤ RDS(on , Applications DS100088A(10/09) IXFN360N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise , ,071,537 7,157,338B2 IXFN360N10T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1 , TC - Degrees Centigrade 125 150 175 IXFN360N10T Fig. 7. Input Admittance Fig. 8 , Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFN360N10T Fig. 13


Original
PDF IXFN360N10T 130ns OT-227 E153432 360N10T IXFN360N10T
2009 - IXFN360N10T

Abstract: 360N10T F360 IXFN360N10 ixfn
Text: IXFN360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = RDS(on , Power Supplies High Speed Power Switching Applications DS100088A(10/09) IXFN360N10T Symbol , ,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN360N10T Fig. 2. Extended Output , IXFN360N10T Fig. 7. Input Admittance Fig. 8. Transconductance 200 350 TJ = - 40ºC 180 300 , 10 VDS - Volts 100 IXFN360N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction


Original
PDF IXFN360N10T 130ns OT-227 E153432 360N10T IXFN360N10T F360 IXFN360N10 ixfn
2008 - 360N10T

Abstract: ixfn360n10 IXFN360N10T ac motor 360n10 IXFN 360
Text: Preliminary Technical Information IXFN360N10T TrenchGate Power MOSFET HiperFETTM VDSS , Applications DS100088(12/08) IXFN360N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise , 6,771,478 B2 7,071,537 7,157,338B2 IXFN360N10T Fig. 2. Output Characteristics @ 150ºC , IXFN360N10T Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 400 360 TJ = - , right to change limits, test conditions, and dimensions. 0.1 1 10 IXFN360N10T Fig. 12


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PDF IXFN360N10T OT-227 E153432 360N10T ixfn360n10 IXFN360N10T ac motor 360n10 IXFN 360
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