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IXFN300N10P datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFN300N10P IXFN300N10P ECAD Model IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH SOT-227 Original PDF

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2008 - IXFN300N10P

Abstract: 300N10P
Text: Preliminary Technical Information IXFN300N10P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test , ) IXFN300N10P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min , IXFN300N10P Fig. 2. Output Characteristics @ 150ºC Fig. 1. Extended Output Characteristics @ 25ºC 300 , 6.5 7.0 7.5 IXFN300N10P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. .


Original
PDF IXFN300N10P 100ms 300N10P IXFN300N10P
2008 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN300N10P RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test , €¢ High speed power switching applications DS100016(07/08) IXFN300N10P Symbol Test Conditions , ,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN300N10P Fig. 2. Output , IXFN300N10P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. . Transconductance 180 350 TJ = -


Original
PDF IXFN300N10P 100ms 300N10P
2014 - Not Available

Abstract: No abstract text available
Text: IXFN300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25C to , Power Supplies • High Speed Power Switching Applications DS100016A(02/14) IXFN300N10P Symbol , 6,771,478 B2 7,071,537 7,157,338B2 IXFN300N10P Fig. 2. Output Characteristics @ TJ = 150ºC , 4.5 5.0 5.5 VGS - Volts 6.0 6.5 7.0 7.5 IXFN300N10P Fig. 8. Forward Voltage


Original
PDF IXFN300N10P 100ms 300N10P
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