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IXFN26N120P datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFN26N120P IXFN26N120P ECAD Model IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 23A SOT-227B Original PDF

IXFN26N120P Datasheets Context Search

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2011 - Not Available

Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN26N120P RDS(on) trr miniBLOC E153432 VDSS ID25 = = 1200V 23A 500m 300ns S Symbol VDSS , ) IXFN26N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td , ,338B2 IXFN26N120P Fig. 1. Output Characteristics @ T J = 25ºC 50 24 VGS = 10V 9V 45 40 35 9V VGS = , Degrees Centigrade © 2011 IXYS CORPORATION, All Rights Reserved IXFN26N120P Fig. 7. Input


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PDF IXFN26N120P E153432 300ns 26N120P 10-24-11-C
2011 - Not Available

Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS(on) ≤ trr ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A 500mΩ Ω 300ns , Application DS99887B10/11) IXFN26N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified , IXFN26N120P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = , 0 25 50 75 TC - Degrees Centigrade 100 IXFN26N120P Fig. 8. Transconductance


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PDF IXFN26N120P 300ns E153432 26N120P 10-24-11-C
2007 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode , DS99887(09/07) IXFN26N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified , ,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN26N120P , 100 125 150 IXFN26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 30 40 TJ


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PDF IXFN26N120P 300ns OT-227 E153432 26N120P 1-07-A
2008 - 26N120P

Abstract: 26n120 IXFN26N120P
Text: IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A 460m 300ns miniBLOC , High Voltage DC-DC converters High Voltage DC-AC inverters DS99887A (3/08) IXFN26N120P Symbol , ,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN26N120P Fig. 1. Output , IXFN26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 30 40 TJ = - 40ºC 35 TJ = 125ºC 25ºC


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PDF IXFN26N120P 300ns OT-227 E153432 26N120P 3-28-08-B 26n120 IXFN26N120P
1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN44N100P 2R4N120P transistor polar IXFN38N100 sot 227b diode fast 26n120p
Text: 0.4600 16000 225.0 300 0.130 960 K, X IXFN26N120P Polar HiPerFETTM 1200


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PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN44N100P 2R4N120P transistor polar IXFN38N100 sot 227b diode fast 26n120p
2008 - IXTD08N100P-1A

Abstract: IXTQ22N60P DWS20-200A IXFH20N80P IXFK180N15P IXFH24N80P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: IXFN26N120P IXFB30N120P IXFN32N120P IXFH15N100P IXFH20N100P IXFK26N100P IXFN32N100P IXFN44N100P


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