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IXFN26N100P datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFN26N100P IXFN26N100P ECAD Model IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A SOT-227B Original PDF

IXFN26N100P Datasheets Context Search

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2008 - Not Available

Abstract: No abstract text available
Text: VDSS ID25 IXFN26N100P PolarTM Power MOSFET HiPerFETTM = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC , Drivers AC and DC motor controls Robotics and servo controls 390 mΩ DS99878A(4/08) IXFN26N100P , ,157,338B2 IXFN26N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output , Degrees Centigrade 100 125 150 IXFN26N100P Fig. 8. Transconductance Fig. 7. Input


Original
PDF IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B
2007 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS(on) trr N-Channel Enhancement Mode Avalanche , ) IXFN26N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min , ,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN26N100P , Degrees Centigrade 100 125 150 IXFN26N100P Fig. 8. Transconductance Fig. 7. Input


Original
PDF IXFN26N100P 300ns OT-227 E153432 26N100P 3-07-A
2008 - IXFN26N100P

Abstract: No abstract text available
Text: IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A 390m 300ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT , controls 390 m DS99878A(4/08) IXFN26N100P Symbol Test Conditions (TJ = 25°C unless otherwise , ,071,537 7,157,338B2 IXFN26N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended , Centigrade 100 125 150 IXFN26N100P Fig. 8. Transconductance Fig. 7. Input Admittance 50


Original
PDF IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B IXFN26N100P
1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN44N100P 2R4N120P transistor polar IXFN38N100 sot 227b diode fast 26n120p
Text: 0.3900 14000 197.0 300 0.160 780 K, X IXFN26N100P Polar HiPerFETTM 1000


Original
PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN44N100P 2R4N120P transistor polar IXFN38N100 sot 227b diode fast 26n120p
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