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IXYS Integrated Circuits Division
IXFN210N30P3 In a Tube of 10, N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227B IXYS IXFN210N30P3, TU IXFN210N30P3 ECAD Model
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RS Components (2) IXFN210N30P3 Tube 0 10 - $33.3 $33.3 $33.3 $33.3 Buy Now
IXFN210N30P3 Bulk 23 1 $36.63 $32.72 $30.05 $30.05 $30.05 Buy Now
IXYS Corporation
IXFN210N30P3 Module; single transistor; 300V; 192A; SOT227B; Ugs: ±30V; screw IXFN210N30P3 ECAD Model
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Transfer Multisort Elektronik IXFN210N30P3 12 10 $35.27 $28.04 $28.04 $28.04 $28.04 Buy Now

IXFN210N30P3 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFN210N30P3 IXFN210N30P3 ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 192A SOT-227 Original PDF

IXFN210N30P3 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - IXFN210N30P3

Abstract: E153432
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 , CORPORATION, All Rights Reserved IXFN210N30P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise , B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN210N30P3 , Reserved IXFN210N30P3 Fig. 7. Input Admittance 200 180 160 140 160 25ºC 200 TJ = - 40ºC Fig. 8 , Dimensions. IXFN210N30P3 Fig. 13. Maximum Transient Thermal Impedance 0.1 Z (th)JC - ºC / W 0.01


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PDF IXFN210N30P3 100ms 210N30P3 IXFN210N30P3 E153432
2012 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N30P3 , DS100482(06/12) IXFN210N30P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified , ,071,537 7,157,338B2 IXFN210N30P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2 , 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN210N30P3 Fig , 10 100 VDS - Volts 1,000 IXFN210N30P3 Fig. 13. Maximum Transient Thermal Impedance Z


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PDF IXFN210N30P3 250ns E153432 100ms 210N30P3
2013 - IXFN210N30P3

Abstract: No abstract text available
Text: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS , Drives High Speed Power Switching Applications DS100482A(12/13) IXFN210N30P3 Symbol Test , IXFN210N30P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = , 25 50 75 TC - Degrees Centigrade 100 IXFN210N30P3 Fig. 8. Transconductance Fig. 7 , ,000 IXFN210N30P3 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 0.1 0.01


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PDF IXFN210N30P3 250ns E153432 100ms 210N30P3 IXFN210N30P3
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