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IXYS Integrated Circuits Division
IXFN132N50P3 IXFN132N50P3 N-Channel MOSFET, 112 A, 500 V HiperFET, Polar3, 4-Pin SOT-227B IXYS, EA IXFN132N50P3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
RS Components (2) IXFN132N50P3 Bulk 25 1 $27.5 $23.19 $22.02 $22.02 $22.02 More Info
IXFN132N50P3 Tube 0 10 - $25 $25 $25 $25 More Info
IXYS Corporation
IXFN132N50P3 N-Ch 500V 112A 1500W 0,039R SOT227B IXFN132N50P3 ECAD Model
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Schukat electronic IXFN132N50P3 8 1 €22 €17 €16.4 €16.4 €16.4 More Info
element14 Asia-Pacific IXFN132N50P3 55 1 $38.78 $35.87 $30.64 $30.64 $30.64 More Info
Farnell element14 IXFN132N50P3 53 1 £22.45 £19.08 £16.27 £16.27 £16.27 More Info

IXFN132N50P3 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFN132N50P3 IXFN132N50P3 ECAD Model IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 112A SOT227 Original PDF

IXFN132N50P3 Datasheets Context Search

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2014 - Not Available

Abstract: No abstract text available
Text: IXFN132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel , Drives High Speed Power Switching Applications DS100316B(6/14) IXFN132N50P3 Symbol Test , ,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN132N50P3 Fig. 1. Output , 25 50 75 TC - Degrees Centigrade 100 IXFN132N50P3 Fig. 7. Input Admittance Fig. 8 , Dimensions. 10 100 VDS - Volts 1,000 IXFN132N50P3 Fig. 13. Resistive Turn-on Rise Time vs


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PDF IXFN132N50P3 250ns E153432 132N50P3 K9-W38) 2-14-A
2011 - ixfn132n50p3

Abstract: 132N50P3 diode 6.6A rectifier Z diode BE 66a ixfn132
Text: Avalanche Rated Fast Intrinsic Rectifier IXFN132N50P3 VDSS ID25 RDS(on) trr = = 500V 112A , DS100316(03/11) IXFN132N50P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss , IXFN132N50P3 Fig. 1. Output Characteristics @ T J = 25ºC 140 VGS = 10V 8V 200 100 7V 7V 250 VGS = 10V 8V , Reserved IXFN132N50P3 Fig. 7. Input Admittance 200 180 160 140 TJ = 125ºC 25ºC - 40ºC 200 TJ = - 40ºC , , Test Conditions, and Dimensions. IXFN132N50P3 Fig. 13. Maximum Transient Thermal Impedance 1


Original
PDF IXFN132N50P3 250ns E153432 132N50P3 ixfn132n50p3 diode 6.6A rectifier Z diode BE 66a ixfn132
2011 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN132N50P3 , High Speed Power Switching Applications DS100316(03/11) IXFN132N50P3 Symbol Test Conditions , ,157,338B2 IXFN132N50P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output , 100 IXFN132N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 200 200 180 180 , , Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN132N50P3 Fig. 13


Original
PDF IXFN132N50P3 250ns E153432 132N50P3
2013 - Not Available

Abstract: No abstract text available
Text: Preliminary Technical Information IXFN132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS , Switching Applications DS100316A(11/13) IXFN132N50P3 Symbol Test Conditions (TJ = 25C Unless , 7,157,338B2 IXFN132N50P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output , 100 IXFN132N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 200 200 180 180 , , Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN132N50P3 Fig. 13


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PDF IXFN132N50P3 250ns E153432 132N50P3
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