The Datasheet Archive

IXFM21N50 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
IXFM21N50 IXFM21N50 ECAD Model IXYS 500V HiPerFET power MOSFET Original PDF
IXFM21N50 IXFM21N50 ECAD Model IXYS HiperFET Power MOSFETS Scan PDF
IXFM21N50 IXFM21N50 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF

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1999 - IXFH26N50

Abstract: IXFH21N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/ IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS(on) 500 V 21 A 0.25 Ω 500 V 24 A , power density 91525H (9/99) IXFH21N50 IXFM21N50 Symbol Test Conditions (TJ = 25°C, unless , ,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH21N50 IXFM21N50 IXFH24N50 , 100 125 150 IXFH21N50 IXFM21N50 Fig.7 Gate Charge Characteristic Curve 100 VDS = 250V


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PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 IXFH26N50 IXFH21N50
1998 - 24n50

Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/ IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS(on) 500 V 21 A 0.25 W 500 V 24 A 0.23 , power density 91525G (2/98) IXFH21N50 IXFM21N50 Symbol Test Conditions (TJ = 25°C, unless , ,117 5,237,481 5,486,715 5,381,025 IXFH21N50 IXFM21N50 Fig. 1 Output Characteristics 50 , IXFM21N50 Fig.7 Gate Charge Characteristic Curve IXFH24N50 IXFM24N50 IXFT24N50 Fig.8 Forward Bias


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PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 24n50 IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50
1999 - IXFH21N50

Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/ IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS(on) 500 V 21 A 0.25 500 V 24 A 0.23 , mountable package · High power density 91525H (9/99) IXFH21N50 IXFM21N50 Symbol Test Conditions , ,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH21N50 IXFM21N50 , 100 125 150 IXFH21N50 IXFM21N50 Fig.7 Gate Charge Characteristic Curve 100 VDS = 250V


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PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFH21N50 IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50
IXFH21N50

Abstract: No abstract text available
Text: HiPerFET™ Power MOSFETs D V DSS IXFH/ IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family DS(on) ^D25 500 V 21 A 0.25 Q , IXFM21N50 □ IXYS Symbol TestConditions CT, = 25°C, unless otherwise specified) D Characteristic , ,237,481 5,381,025 IXFH21N50 IXFM21N50 □ IXYS IXFH26N50 IXFM26N50 IXFT26N50 Fig. 2 , €œ IXFH21N50 IXFH24N50 IXFM21N50 IXFM24N50 _ IXFT24N50 Fig


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PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50
2000 - 21n50

Abstract: ixfh 26 n 49
Text: HiPerFETTM Power MOSFETs VDSS IXFH/ IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 500 V 21 A 0.25 W 500 V 24 A 0.23 W 500 V 26 A 0.20 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width , / IXFM21N50 IXFH26N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) VGS = 10 V, ID =


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PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 21N50 24N50 26N50 ixfh 26 n 49
2000 - 104 k 100

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/ IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 500 V 21 A 0.25 W 500 V 24 A 0.23 W 500 V 26 A 0.20 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width , limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1-2 IXFH/ IXFM21N50


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PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 21N50 24N50 26N50 104 k 100
Not Available

Abstract: No abstract text available
Text: IXFM21N50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case420m Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)4m I(DSS) Max. (A


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PDF IXFM21N50 Junc-Case420m
mosfet 4800

Abstract: ixfn27n80 150N10 ixfm40n30 IXFN36n60 IXFN44N50 4800 power mosfet Co701 RD5A ixfm35n30
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type T jm = 150°C >- New >- IXFN 200N06 IX FN 200N07 IXFN 150N10 >- IXFN 100N20 IXFN 106N20 IXFN 73N30 IXFN 44N50 IXFN 48N50 >- IXFN 58N50 IXFN 61N50 IXFN 32N60 IXFN 36N60 IXFN 27N80 IXFM67N10 IXFM75N10 IXFM42N20 IXFM50N20 IXFM35N30 IXFM40N30 IXFM13N50 IXFM21N50 IXFM24N50 IXFM15N60 IXFM20N60 IXFM7N80 IXFM11N80 IXFM13N80 IXFM6N90 IXFM10N90 IXFM12N90 IXFM6N100 IXFM10N100 IXFM12N100 1000 900 600 800 600 800 100 200 300 500 max. rts 150


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PDF 200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 ixfm40n30 IXFN36n60 IXFN44N50 4800 power mosfet Co701 RD5A ixfm35n30
dioda by 238

Abstract: 1xys IXFN50N25 1XFM67N10 HiperFET IXFM50N20 IXFM6N90 IXFH40N30 IXFH11N90 IXFH11N100
Text: -3) IXFM21N50 500 21 0.25 250 21 10 250 IXFM19N50 500 19 0.3 250 19 10 250 IXFM13N50 .500 13 0.4 250


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PDF 0D00S73 dioda by 238 1xys IXFN50N25 1XFM67N10 HiperFET IXFM50N20 IXFM6N90 IXFH40N30 IXFH11N90 IXFH11N100
TL 650 ht

Abstract: mbab diode sy 166 IXFH12N100 IXFN15N100 IXFMS0N20 MKL series IXFH26N50 IXFH5N100 ditti
Text: . Pd Max (WjtU) alaa slff IXFM24N50 IXFM21N50 IXFM19N50 IXFM13N50 IXFM12N50 IXFM40N30 IXFM35N30


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PDF 4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 IXFH12N100 IXFN15N100 IXFMS0N20 MKL series IXFH26N50 IXFH5N100 ditti
1XFH12n100

Abstract: transistor 13n80
Text: 41 12 1000 21 300 250 11 900 IXFH21N50 IXFM21N50 250 020 20 600 300 , o w trr, IXFH26N50 IXFH24N50 IXFH21N50 IXFM26N50 IXFM24N50 IXFM21N50 HDMOS™ Family , I X Y S CÔRP IXFM26N50 IXFM24N50 IXFM21N50 IXFH26N50 IXFH24N50 IXFH21N50 ELECTRICAL , n ) v s . D r a in 1XFH21N50 IXFM21N50 C u rre n t F ig . 4 . T e m p e r a t u r e D , IXFM24N50 IXFH21N50 IXFM21N50 F lg . 7 . G a te C h a r g e F ig . 8 . F o r w a r d B ia s S a fe


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PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80
IXFH15N100

Abstract: 2N3051 IXTH26N50 IXFM6N90 IXTH24N50L IXFX15N100 IXFH40N30 IRFP450R IXFH20N50 IXFH9N80
Text: No file text available


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PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXTH26N50 IXFM6N90 IXTH24N50L IXFX15N100 IXFH40N30 IRFP450R IXFH20N50 IXFH9N80
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