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IXFL70N60Q2 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFL70N60Q2 IXFL70N60Q2 ECAD Model IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 37A ISOPLUS264 Original PDF

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2008 - 70n60

Abstract: IXFL70N60Q2
Text: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated , lighting controls 100 A 5 mA 88 m DS100068(10/08) IXFL70N60Q2 Symbol Test Conditions (TJ = , ,157,338B2 IXFL70N60Q2 Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output , 1 25 1 50 IXFL70N60Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 1 00 1


Original
PDF IXFL70N60Q2 250ns ISOPLUS264 70N60Q2 8-08-A 70n60 IXFL70N60Q2
2009 - 70n60

Abstract: IXFL70N60Q2
Text: IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt , 92 m DS100068A(06/09) IXFL70N60Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise , IXFL70N60Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 70 , 1 50 IXFL70N60Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 90 80 80 70


Original
PDF IXFL70N60Q2 250ns ISOPLUS264 26lts 70N60Q2 8-08-A 70n60 IXFL70N60Q2
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