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IXFL34N100 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFL34N100 IXFL34N100 ECAD Model IXYS HiPerFET Power MOSFET ISOPLUS264 (Electrically Isolated Backside) Original PDF

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2009 - IXFL34N100

Abstract: IXFN36N100
Text: IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS(on) 1000V 30A 280m (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M 1000 1000 V V VGSS VGSM Continuous Transient ± , ) IXFL34N100 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min


Original
PDF IXFL34N100 ISOPLUS264TM ISOPLUS264 00A/s IXFN36N100 338B2 IXFL34N100
2009 - Not Available

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS(on) ≤ IXFL34N100 1000V 30A 280mΩ Ω (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous , DS98932D(7/09) IXFL34N100 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified


Original
PDF ISOPLUS264TM IXFL34N100 ISOPLUS264 IXFN36N100 338B2
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