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IXFK35N50 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFK35N50 IXFK35N50 ECAD Model IXYS 500V HiPerFET power MOSFET Original PDF

IXFK35N50 Datasheets Context Search

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ixys ixfn 55n50

Abstract: 170n10 C1106 c1124 IXFH26N50 c1120 IXFN170N10 IXFN36n60 200N07 s 13n50
Text: Gate Charge IXFK 73N30 IXFN 73N30 C1-46 C1-50 C1-54 C1-58 > IXFK 33N50 >- IXFK35N50 /.S


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PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 c1124 IXFH26N50 c1120 IXFN170N10 IXFN36n60 200N07 s 13n50
264AA

Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D S S ^D25 ^DS(on) IXFK33N50 IXFK35N50 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol V DSS VD G R VG S VoSM >0» U '« Test C onditions Tj = 25°C to150°C Tj = 25°C to 150°C; RG S = 1 MO Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJ M Tc = 25°C lD Tc = Maximum Ratings 500 500 ±20 ±30 33N50 35N50 33N50 35N50 33N50 35N50 33 35 132 140 30 35 2.5


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PDF IXFK33N50 IXFK35N50 to150 33N50 35N50 O-264AA 264AA SMD-264 TO264AA smd diode 513 TO-264-aa diode 253 TO-264AA
2000 - Not Available

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS(on) 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ID25 TC = 25°C IDM TO-264 AA ±30 33 35 A A TC = 25°C, pulse width


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PDF IXFK33N50 IXFK35N50 O-264 33N50 35N50
2000 - 35N50

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK33N50 IXFK35N50 ID25 RDS(on) 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C ID = 32 A TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150


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PDF IXFK33N50 IXFK35N50 33N50 35N50 35N50 O-264
TO-264-aa

Abstract: d2529
Text: 640 240 35 1 j VG S = 1 0 V ,V D 8 = 0 .5 .V D S S ,ID= 0.5. RS = 1Q (External), ^D25 IXFK35N50


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PDF 35N50 Cto150 TO-264-aa d2529
2000 - 35N50

Abstract: NS4250 IXFK33N50 IXFK35N50
Text: HiPerFETTM Power MOSFETs VDSS RDS(on) 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ID25 TC = 25°C IDM TO-264 AA ±30 33 35 A A TC = 25°C, pulse width limited


Original
PDF IXFK33N50 IXFK35N50 O-264 33N50 35N50 35N50 NS4250 IXFK33N50 IXFK35N50
TO-264-aa

Abstract: No abstract text available
Text: □ IXYS v DSS HiPerFET™ Power MOSFETs DS(on) 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 500 V v DR G Td = 25°C to 150°C; RG = 1 Mß S 500 V VG S Continuous ±20 V V GSM Transient ±30 V ^2 D5 Tc = 25°C 33N50 35N50 33 35


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PDF IXFK33N50 IXFK35N50 33N50 35N50 O-264AA outlinesTO-264AAexceptL, TO-264-aa
smd diode 513

Abstract: TO-264 35n50
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t V DSS IXFK33N50 IXFK35N50 D ^D25 DS(on) 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol V DSS VooB Vos Test Conditions Tj = 25°C to 150°C T, = 25"C to 150°C; Rrs = 1 M£J Continuous Transient Tc =25°C 33N50 35N50 33N50 35N50 33N50 35N50 Maximum Ratings 500 500 +20 ±30 33 35 132 140 30 35 45 5 416 55 . +150 150 -55 . +150 V V V V A A A A A A mJ V/ns W °C °C TO-264 AA (IXFK


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PDF IXFK33N50 IXFK35N50 33N50 35N50 35N50 O-264 smd diode 513 TO-264
ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q FN230 IXFH40N30 IXFN44N50U2 N50P IXFN36N60 IXFN26N90 IXFR100N25
Text: IXFT32N50Q IXFK32N50Q IXFJ32N50Q IXFK33N50 IXFK35N50 IXFR44N50Q IXFR48N50Q IXFR50N50 IXFK44N50(3


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PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q FN230 IXFH40N30 IXFN44N50U2 N50P IXFN36N60 IXFN26N90 IXFR100N25
IXAN0009

Abstract: 0009 ixan0009 3 ixan0009 2 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: No file text available


Original
PDF IXAN0009 IXAN0009 0009 ixan0009 3 ixan0009 2 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
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