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IXYS Corporation
IXFK21N100F Transistor: N-MOSFET; HiPerRF™; unipolar; 1kV; 21A; 500W; TO264 IXFK21N100F ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Transfer Multisort Elektronik IXFK21N100F 25 25 $29.49 $25.59 $23.59 $23.59 $23.59 More Info
element14 Asia-Pacific IXFK21N100F 0 1 $36.09 $33.38 $28.5 $23.71 $23.71 More Info

IXFK21N100F datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFK21N100F IXFK21N100F ECAD Model IXYS 1000V HiPerRF power MOSFET Original PDF

IXFK21N100F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - Not Available

Abstract: No abstract text available
Text: HiPerRFTM Power MOSFETs VDSS = 1000V ID25 = 21A RDS(on) ≤ 500mΩ Ω ≤ 250ns trr IXFK21N100F IXFX21N100F F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V , Amplifiers DS98880A(05/10) IXFK21N100F IXFX21N100F Symbol Test Conditions (TJ = 25°C Unless


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PDF 250ns IXFK21N100F IXFX21N100F O-264 338B2
2002 - pf640

Abstract: IXFK21N100F IXFX21N100F PLUS247
Text: IXFK21N100F IXFX21N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 21A ID25 RDS(on) 500m trr 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M 1000 1000 V V VGSS , mounting Space savings High power density DS98880(01/02) IXFK21N100F IXFX21N100F Symbol Test


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PDF IXFK21N100F IXFX21N100F 250ns 247TM 00A/s, 338B2 pf640 IXFK21N100F IXFX21N100F PLUS247
2003 - IX6R11S6

Abstract: ix6r11s3
Text: A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH , : IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E


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PDF IX6R11 IX6R11 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 Edisonstrasse15
2004 - VCH20

Abstract: IX6R11P7 IXFK21N100F 18PIN 18-PIN ixdd414 IX6R11S3 IX6R11S6 ixys mosfet IX6R11
Text: : IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E , 1000 Load Conditions: B A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q


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PDF IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 IXFK21N100F 18PIN 18-PIN ixdd414 ixys mosfet
2004 - IX6R11S3

Abstract: IX6R11P7
Text: Temperature - C A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D , Conditions: A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @


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PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7
2004 - U4008

Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
Text: Temperature - C Typical -400 75 75 Load Conditions: 70 o A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E: IXTU01N100 @ VCH= 400V F , Conditions: B A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D


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PDF IX6R11 IX6R11 IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 U4008 IX6R11P7 IXFK21N100F 18PIN 18-PIN
2004 - IX6R11P7

Abstract: No abstract text available
Text: . VCH supply voltage 75 Case Temperature - C A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH , = 200V 70 B A B C D Load Conditions: A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C


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PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7
2003 - Not Available

Abstract: No abstract text available
Text: voltage vs. VCH supply voltage 75 Case Temperature - C A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ , @ VCH= 200V 70 B A B C D Load Conditions: A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH


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PDF IX6R11 IX6R11 sigFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6
2003 - Not Available

Abstract: No abstract text available
Text: A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH , : IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E


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PDF IX6R11 IX6R11 sXFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6
2010 - IXFX21N100F

Abstract: IXFK21N100F PLUS247
Text: IXFK21N100F IXFX21N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 21A ID25 RDS(on) 500m trr 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M 1000 1000 V V , Applications Pulse Generation Laser Drivers RF Amplifiers DS98880A(05/10) IXFK21N100F IXFX21N100F


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PDF IXFK21N100F IXFX21N100F 250ns O-264 338B2 IXFX21N100F IXFK21N100F PLUS247
2007 - IX6R11P7

Abstract: No abstract text available
Text: : IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E , Conditions: B C E 60 55 D A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C


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PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7
2007 - IXCP10M90S

Abstract: IX6R11S6 18-PIN 10m90s
Text: Temperature - oC A Load Conditions: B C 60 55 D A: IXFK21N100F @ VCH= 300V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=300V D: IXFH14N100Q @ VCH=200V E: IXTU01N100 @ VCH= 300V F , 65 60 A: IXFK21N100F @ VCH= 300V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=300V D


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PDF IX6Q11 IX6Q11 IXTU01N100 IX6Q11S3 IX6Q11S6 IXCP10M90S IX6R11S6 18-PIN 10m90s
2007 - 10M90S

Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q 10M90 IXCP 18-PIN 6055d
Text: : IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C: IXFH14N100Q @ VCH=400V D: IXFH14N100Q @ VCH=200V E , Conditions: B C E 60 55 D A: IXFK21N100F @ VCH= 400V B: IXFK21N100F @ VCH= 200V C


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PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 10M90S IXTH14N60P IX6R11S3 IX6R11P7 IXFH14N100Q 10M90 IXCP 18-PIN 6055d
TO-264 weight

Abstract: No abstract text available
Text: IXFK21N100F IXFX21N100F IXFK24N100F IXFX24N100F IXFN24N100F Fig. 10 TO-268 Weight = 4 g s f c


OCR Scan
PDF IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight
2004 - IXFD21N100F-8F

Abstract: IXFD38N100Q2-95 DIODE 1581 IXFH40N30 IXYS IXFK21N100Q IXFD80N10 IXFK38N80Q2 IXFN80N50 IXFB50N80Q2 IXFK120N20
Text: IXFH6N100F IXFH6N100Q IXFH10N100 IXFH14N100Q2 IXFH14N100 IXFK21N100Q IXFK21N100F IXFK24N100 IXFK24N100F


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PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXFH40N30 IXYS IXFK21N100Q IXFD80N10 IXFK38N80Q2 IXFN80N50 IXFB50N80Q2 IXFK120N20
IXAN0011

Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
Text: Amp Ohm W IXFH6N100F 54 IXFH12N100F 77 1.08 1.54 9.3 6.5 0.8 1.2 IXFK21N100F


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PDF IXAN0011 100KHz IXAN0011 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
IXAN0009

Abstract: 0009 ixan0009 3 ixan0009 2 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: No file text available


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PDF IXAN0009 IXAN0009 0009 ixan0009 3 ixan0009 2 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
2008 - IXTD08N100P-1A

Abstract: IXTQ22N60P DWS20-200A IXFH20N80P IXFK180N15P IXFH24N80P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: IXFK21N100F IXFK24N100 IXFK24N100F IXFB38N100Q2 IXFN36N100 IXFK24N90Q IXFK26N90 IXFN39N90


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PDF
irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: No file text available


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PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
2008 - 7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: No file text available


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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