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IXFK100N10 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
IXFK100N10 IXFK100N10 ECAD Model IXYS 100V HiPerFET power MOSFET Original PDF

IXFK100N10 Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: conditions, and dimensions. © 1999 IXYS All rights reserved C1 - 3 6 IXFK100N10 IXFN150N10 Symbol , Fig. 1 Output Characteristics Fig. 2 Input Admittance IXFK100N10 IXFN 150N10 Vos-Volts


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PDF IXFK00N10 IXFN150N10 O-264 to150 OT-227 E153432
Not Available

Abstract: No abstract text available
Text: IXFK100N10 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)100# I(DM) Max. (A) Pulsed I(D)76 @Temp (øC)120# IDM Max (@25øC Amb)560 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.24 Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)8.0m I


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PDF IXFK100N10
30n50 mosfet

Abstract: MCC SMD DIODE VM0400-02F DSE119-06AS 300-06DA smd43 35-06AS mosfet p channel 250-12DA 500-06DA
Text: IXFK100N10 IXFH 50N20S IXFK90N20 IXFH40N30S IXFK73N30 IXFH24N50S IXFK44N50 IXFK48N50 IXFH22N55 IXFK36N60


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PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet MCC SMD DIODE VM0400-02F DSE119-06AS 300-06DA smd43 35-06AS mosfet p channel 250-12DA 500-06DA
150N10

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr V DSS IXFK100N10 IXFN150N10 100 V 100 V D ^025 DS(on) 100 A 150 A 12 mQ 12 mQ TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFN IXFK 100 100 ±20 ±30 100 T : 76 560 75 30 5 500 100 100 ±20 ±30 150 560 75 30 5 520 V V V V A A A A mJ V/ns W `C "C C G = Gate S = Source D = Drain TAB = Drain miniBLOC, SOT-227 B (IXFN) T O E153432 s s Voss Voen %s v 0E ^D 2 5 ^012 0 ^ O M »« c c < U 1


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PDF IXFK100N10 IXFN150N10 O-264 OT-227 E153432 IXFK10QN40 150N10
Diode D25 N10 R

Abstract: Diode D25 N10 P
Text: XYS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150 N10 v ¥ DSS = ^D25 = = < P DS(on) K 100 V 100/150 A 12 mQ 200 ns P relim inary data Symbol VDSS v DGR v GS v GSM ^25 ^D119 ^DM ' AR oc < LU TO-264 AA (IXFK) Maximum Ratings IXFK IXFN 100 M ii Test Conditions ^ ^ = 25°C to 150°C = 25°C to 150°C; RG S= 1 100 100 ±20 ±30 150 - V V V V A A A A mJ V/ns W 100 ±20 ±30 100® 76 560 75 30 5 500 s miniBLOC


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PDF IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P
2000 - Not Available

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 100 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 100 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 100 Â


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PDF IXFK100N10 IXFN150N10 O-264 ID120
2000 - E 150N10

Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 100 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 100 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 100 150


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PDF IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10
2000 - 150N10

Abstract: 100n10 E 150N10
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100


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PDF IXFK100N10 IXFN150N10 O-264 ID120 100N10 150N10 150N10 E 150N10
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Text: IXFH8N80 IXFK100N10 IXFK32N60 IXFK44N50 IXFK48N50 IXFK90N20 IXFN100N20 IXFN106N20 IXFN150N10


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: IXFH8N80 IXFK100N10 IXFK32N60 IXFK44N50 IXFK48N50 IXFK90N20 IXFN100N20 IXFN106N20 IXFN150N10


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
1999 - SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: IXFH6N90 IXFH75N10 IXFH76N06-11 IXFH76N06-12 IXFH7N80 IXFH8N80 IXFK100N10 IXFK32N60 IXFK44N50


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PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
1999 - IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: IXFK110N06 IXFN200N06 IXFK27N80 IXFH76N06-11 IXFH76N06-12 IXFK110N07 IXFH75N10 IXFN150N10 IXFK100N10


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PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: No file text available


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
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