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IXFH52N30P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, TO-247, 3 PIN

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IXFH52N30P IXYS Corporation Future Electronics 0 $3.84 $3.84
IXFH52N30P IXYS Corporation RS Components 60 £4.51 £2.42
IXFH52N30P IXYS Corporation RS Components 326 £2.55 £2.42

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IXFH52N30P datasheet (1)

Part Manufacturer Description Type PDF
IXFH52N30P IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

IXFH52N30P Datasheets Context Search

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2008 - 52N30P

Abstract:
Text: IXFV52N30P IXFV52N30PS IXFH52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on , to mount Space savings High power density 66 m DS99197F(05/08) IXFH52N30P IXFV52N30P , ,338B2 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended , 25 50 75 100 T C - Degrees Centigrade IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 8 , dimensions. IXYS REF: T_52N30P(6S)3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 13. Maximum


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P 52N30 IXFV52N30P IXFV52N30PS PLUS220SMD
2013 - Not Available

Abstract:
Text: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = = ï , Controls DS99197G(10/13) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions (TJ = 25ï , IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output , 0 25 50 75 TC - Degrees Centigrade 100 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 7 , , Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFH52N30P IXFV52N30P


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P
2008 - Not Available

Abstract:
Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFV52N30P IXFV52N30PS IXFH52N30P RDS(on , 66 mΩ DS99197F(05/08) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions (TJ = 25 , B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH52N30P IXFV52N30P , Centigrade IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 8. Transconductance Fig. 7. Input Admittance 100 , _52N30P(6S)3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 13. Maximum Transient Thermal Impedance


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P
2004 - Not Available

Abstract:
Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH52N30P IXFT52N30P VDSS ID25 trr RDS(on) = 300 V = 52 A 66 m 250 ns Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Maximum Ratings 300 300 ± 30 V V V A A A mJ J V/ns W °C °C °C °C TO-268 (IXFT) G D TO-247AD (IXFH) TC = 25°C TC = 25°C, pulse width limited by


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PDF IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P
2008 - IXTD08N100P-1A

Abstract:
Text: IXFH30N50P IXFH36N50P IXFH44N50P IXFK64N50P IXFK80N50P IXFH52N30P IXFH69N30P IXFH88N30P IXFK102N30P


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