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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

ITT DIODE Datasheets Context Search

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sx3704

Abstract: BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
Text: river 300mW . Base A8A21 D3 I D4 . Base D Zener Diode AF26 , D10 S ilicon D iode Varicap Diode 9 Double S ilicon Diode Varicap Diode , Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , D iode S6M1 10D2 1N2070 TV6 10 D16 D24 D20 S ilicon Diode / BY127 BY238 , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded


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PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
2005 - ITT DIODE

Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 EECO Switch 1A210001G EECO itt rotary switch 14 positions
Text: BCO BCO, diode provision BCD complement, diode provision ITT /C & K 3-SERIES Vs. EECO 1776 SERIES , /complement, diode provision, stopped 0-7 ITT /C & K 3-SERIES Vs. EECO 1800 SERIES ITT /C & K P/N Truth , , stopped 0-7 BCD complement, diode provision BCO complement, diode provision, stopped 0-7 ITT /C & K 3 , CROSS REFERENCE GUIDE EECO SWITCH To ITT / C & K PRODUCTS ® EECO Switch A Transico Company , : sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT / C &K EECO QUICK


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08/TBA 2800

Abstract: TBA 2800
Text: integrated circuits of ITT . y y y y y y y The TBA 2800 preamplifier 1C contains four main parts: the , Characteristics at V3 = 5 V, TA = 25 °C, photo diode BPW 41, in the circuit Fig. 1 Current Consumption Gain , Transmitter IC and a Transmission Current Amplitude of 1.5 A, and VoL one Transmitter Diode CQY 99 two , Range (Ta ) changed from (-20 to +65°C) to (0 to +65 °C) ITT Semiconductors Group World , ­ ever, our consent must be obtained in all cases. Information furnished by ITT is believed to be


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PDF 50-Hz-modulated 4bfl2711 08/TBA 2800 TBA 2800
ITT DIODE

Abstract: DS8830 DS8830N
Text: €¢ Single 5 volt power supply • High speed • Diode protected outputs for termination of positive and negative voltage transients • Diode protected inputs to prevent line ringing • Short circuit , (-55 to +125 C) temperature range. Please contact Gemini for prices and avaiJibility. ITT GEMINI , Si 1 IT" PLEASE QUOTE STOCK NO. AND MANUFACTURERS PART NO. WHEN ORDERING ITT GEMINI 265 , $ ss 2 O iiïïi "LÜH! c™ viri»® ITT GEMINI 266 FOR CURRE:NT PRICES PHONE HARLOW


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PDF DS8830N DS8830 500i2. ITT DIODE
D1N4446

Abstract: 1N4446 ITT diode 150D
Text:  ITT SEniCOND/ INTERflETA 5GE D 1N4446 4bô5?ll 0003017 ÔÔT ■ISI T- 0> - Silicon Epitaxial Planar Diode fast switching diode . This diode is also available in glass case DO-34 ITT SErilCONJ , Efficiency Measurement Circuit ITT SEniCON»/ INTERISTA SOE 5 ■4Wa71]l DDDafl„ . m 1N4446 Forward , 100 ITT SEniCOND/ INTERJETA SDE D ■4bfl?711 0005fla0 374 ■ISI 1N4446 Leakage current versus


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PDF 1N4446 DO-34 DO-35 DO-34 DO-35) D1N4446 1N4446 ITT diode 150D
diode code ae 89A

Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY , -2-20 Vdd ° OUT 3 2 GND Fig. 1 : Pin configuration 2 MbflE711 QGGbSai IS I ITT INTERMETALL · ITT Semiconductors PRELIMINARY DATA SHEET HAL300 Functional Description This Hall , -15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -1 5 V. Fig. 2: HAL300 block diagram Fig. 3: Timing diagram ITT INTERMETALL · ITT


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PDF 6251-345-4PD HAL300 diode code ae 89A diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
1n4448 itt

Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Text:  ITT SE!1IC0NJ>/ INTERPIETA SOE D 1N4448 «4baa?ii oooaaai aoo ■isi Silicon Epitaxial Planar Diode fast switching diode . This type in case DO-35 is also available to specification CECC 50.001.023 This diode is also available in glass case DO-34 max. 1.9 Cathode Mark max. 0.52 fl <■1.9 0 , are kept at ambient temperature. 102 ITT SEPIICOND/ INTERNETA 50E D ■4fafl37].l 0009852 147 â , case are kept at ambient temperature. M- Rectification Efficiency Measurement Circuit 103 ITT


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PDF 1N4448 DO-35 DO-34 4baP711 DO-35) 1n4448 itt Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
ITT DIODE

Abstract: ITT DIODE 125 BB721 DDD317T DIODE ITT 21 itt diode
Text:  ITT SEMICOND/ INTERMETALL blE » ■4hß2711 DDD317T bHfi MISI BB721 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the whole range , to +125 °C 106 ITT SEIUCOND/ INTERMETALL blE D ■4bô2711 □DQ31ÔD 3bT «ISI BB721 , VR = 0.5 V to VR = 28 V is 2.5 %. 107 ITT SEMICOND/ INTERMETALL LIE T> ■4bfl2711 DDD31à , voltage 108 ITT SEMICOMA/ INTERMETALL blE D ■4ba27U 0003132 132 MISI BB721 Q-Factor versus


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PDF DDD317T BB721 4bfl2711 DDD31Ã 4ba27U ITT DIODE ITT DIODE 125 BB721 DIODE ITT 21 itt diode
2008 - bd3532

Abstract: back-emf BD3533 ITT DIODE
Text: Storage Temperature Range Maximum Junction Temperature Symbol VCC VEN VTT_IN VDDQ ITT Pd1 Pd2 Pd3 Pd4 Topr , Temperature Range Maximum Junction Temperature Symbol VCC VEN VTT_IN VDDQ ITT Pd1 Pd2 Topr Tstg Tjmax Limit 7 , Temperature Range Maximum Junction Temperature Symbol VCC VEN VTT_IN VDDQ ITT Pd1 Pd2 Topr Tstg Tjmax BD3532F , VREF +30m VREF +30m -1.0 50 40 0.9 0.9 0.8 0.8 V ITT =-1.0A to 1.0A *7 Ta=0 to 100 VCC=5V, VDDQ=2.5V VTT_IN=2.5V ITT =-1.0A to 1.0A *7 Ta=0 to 100 VENHIGH VENLOW IEN 2.3 -0.3 7 5.5 0.8 10 V V uA VEN


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PDF BD3533F/FVM/EKN BD3531F BD3532F/EFV/KN BD3533/31/32 bd3532 back-emf BD3533 ITT DIODE
ITT DIODE 125

Abstract: to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA itt capacitor ITT Intermetall ITT Semiconductor INTERMETALL IEC-68-2-58
Text: : Pin configuration 2 MböH711 OOOfc.273 ITT INTERMETALL - ITT Semiconductor HAL115 Functional , ©s resistor up to -15 V. No external reverse protection diode is needed at the Vop-Pin for values , Dimensions in mm ITT INTERMETALL • ITT Semiconductors 7 Mbfl2711 00Db27M HAL115 Absolute Maximum Ratings , 8.3 12 mA 4 4bfl5711 000fa275 bSS ITT INTERMETALL • ITT Semiconductors HAL115 Electrical , : Recommended pad size SOT-89A Dimensions in mm ITT INTERMETALL • ITT Semiconductors 7 4bô2711 0GGb27b 5m


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PDF 4fafl2711 HAL115 OT-89A: O-92UA: 4bfl2711 b27fl ITT DIODE 125 to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA itt capacitor ITT Intermetall ITT Semiconductor INTERMETALL IEC-68-2-58
ITT DIODE 125

Abstract: No abstract text available
Text: Fig. 1 : Pin configuration 2 Mbf l STl l 0Q0fc,273 ÔÔ5 ITT INTERMETALL • ITT , reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -1 5 V. - 4 , approximately 0.12 g Dimensions in mm ITT INTERMETALL • ITT Semiconductors ■I 4bfl2711 0DDb274 ? n , Temperature Range 1 5.5 8.3 12 mA ■4bä£711 G00b27S bS5 ■ITT INTERMETALL • ITT Semiconductors HAL115 Electrical Characteristics, continued Symbol Parameter


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PDF HAL115 115UA HAL115S OT-89A: O-92UA: GG0b27fi ITT DIODE 125
M66S

Abstract: n type laser diode M66311P 16P2N-A 16P2N 32P2W n type laser diode driver
Text: · Supports B, 16 and 32bits · Sink type, source type, 3-state output · Uses a S chm itt input circu , puter ports · FAX 12-bit pre-head driver 2QP4/20P2N-A CMOS · Uses the S chm itt tnput circu , S chm itt input · Regular current output · S e ria l-L a tc h config u ratio n · Schm itt input · C , driver 3Q P48/28P2V-A Bi-CMOS M66503AGP 36P2R Bi-CMOS R -type laser diode driver M665tOP/FP 20P4/2ÖP2N-A H igh speed Bip R-type laser diode · H igh-speed sw itching-20M bps ·


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PDF M66235FP 16P2N-A 52MHz 25MHz 50MHz 100kHz M66236FP M66238FP 32P2W-A M66S n type laser diode M66311P 16P2N-A 16P2N 32P2W n type laser diode driver
diode ITT 15

Abstract: ITT DIODE itt diodes BB623 BB723 ITT Intermetall
Text:  ITT SEMICOND/ INTERMETALL SDE D BB623, BB723 HbfiE?ii oDDsmb an misi Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the VHF range , Temperature Range TS -55 to +150 °c 112 ITT SEIUCOND/ INTERNETALL SDE D ■4b62711 DD02b47 755 «ISI , VR = 0.5 V to VR = 28 V the maximum capacitance deviation is 2.5 %. 113 ITT SEMICOND , /r. = 25°C 5 10 2 5 100V V* 114 ITT SEMICOND


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PDF BB623, BB723 diode ITT 15 ITT DIODE itt diodes BB623 BB723 ITT Intermetall
ITT DIODE

Abstract: diode ITT itt diodes ITT DIODE 125 intermetall BB723 DDG3163
Text:  ITT SEMICOND/ INTERMETALL blE D ■4bfi2711 DDG3163 07=5 MISI BB723 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the VHF range , Temperature Range TS -55 to +125 °C 110 ITT SEMICOND/ INTERMETALL blE T> m 4bfl2711 00031Ô4 TOS «ISI , VR = 0.5 V to VR = 28 V is 2.5 %. 111 ITT SEniCON»/ INTERMETALL blE » 4bfl2711 0003105 141 , °C / y / 1 2 5 10 2 5 100V Vr 112 ITT SEMICOND/ INTERMETALL tlE J> â


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PDF 4bfi2711 DDG3163 BB723 4bfl2711 ITT DIODE diode ITT itt diodes ITT DIODE 125 intermetall BB723
OV 780

Abstract: No abstract text available
Text: Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc = 2 5 °C Diode , ELECTRICAL CHARACTERISTICS ( DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test Conditions If=100A Tc =25 °C Tc =100"C Min Typ - Max 2.8 - Units V 1.9 1.8 90 130 9 12 405 780 - Trr Diode Reverse Recovery Time |F , nS - Irr Diode Peak Reverse Recovery Current - 12 - A - Qrr Diode Reverse


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PDF SMBH1G100US60 OV 780
2013 - Not Available

Abstract: No abstract text available
Text: (Note1) ITT 1 A Power Dissipation1 Pd1 563(Note4) mW Power Dissipation2 Pd2 , +13.5m V Source current ITT + 1.0 - - A Sink current ITT - - - -1.0 , Hysteresis Voltage ⊿VUVLO 120 180 240 mV ITT =-1.0A to 1.0A Ta=-40℃ to 105℃ VCC = 5.3V, VDDQ = 2.5V VTT_IN = 2.5V ITT =-1.0A to 1.0A Ta=-40℃ to 105℃ VCC = 3.3V, VDDQ =1.5V VTT_IN =1.5V ITT =-1.0A to 1.0A Ta=-40℃ to 105℃ VCC=3.3V, VDDQ=1.35V, VTT_IN=1.35V ITT =-1.0A to


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PDF BD35395FJ-M BD35395FJ-M
D1N4154

Abstract: 1N4154 ITT DIODE itt 1501
Text:  ITT SEniCOND/ INTERISTA 50E D 1N4154 4baa?ll 0002013 134 ■ISI Silicon Epitaxial Planar Diode fast switching diode . This diode is also available in glass case DO-34 U max. 1.9 Cathode , a distance of 8 mm from case are kept at ambient temperature. 94 ITT SEfllCOND/ INTERHETA 50E , . Rectification Efficiency Measurement Circuit ITT SENICOND/ INTERJETA SQE D 1N4154 MbflH?],! OOQEfllS TO? â , 96 ITT SEMICOND/ INTERflETA SOE D ■4bfla?ll OOOSSlfc. TM3 ■ISI 1N4154 Leakage current


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PDF 1N4154 DO-34 DO-35 DO-35) D1N4154 1N4154 ITT DIODE itt 1501
Not Available

Abstract: No abstract text available
Text: Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc = 25 °C Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25°C Operating Junction Temperature , ELECTRICAL CHARACTERISTICS ( DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test Conditions If=100A Tc =25 °C Tc =100"C Min Typ - Max 2.8 - Units V 1.9 1.8 90 130 9 12 405 780 - Trr Diode Reverse Recovery Time |F


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PDF SMBL1G100US60
ITT DIODE

Abstract: transistor ITT DIODE ITT pnp low power fast switching transistor Solitron Transistor
Text: PLA N A R POWER TRANSISTO R Contran De/ices. Inc. BASE CONTACT - ! EM ITT ER CONTACT \ EM ITT ER BASE a A Solitron's triple diffused planar construction provides excellent features , CONTACT EM ITT ER CONTACT -EM ITTER i- B A S E The epitaxial planar transistor construction , IP C O N ST R U C T IO N PIM EPITAXIAL PLA N A R POW ER DIODE ANODE -ANODE CONTACT ¡lg. Éi CATHODE 1 p mp Æ m N +. 5^ EPI S U B S T R A T E - Solitron's epitaxial planar diode chip


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PDF
2003 - Not Available

Abstract: No abstract text available
Text: EMP Suppression Connectors Meet applicable portions of MIL-Specs. PSP ITT Cannon has , ITT Cannon PSP (Phoenix Surge Protector) connectors, is accomplished by the switching action of a , 0.28 35 0.03 120 0.05 0.1 0.01 5 0.34 9.8 0.02 Diode Breakdown Voltage Typical , . Contacts Diode contacts are available in 500, 1,000 and 1,500 watts with breakdown voltage (VBR) values of , POSITION DIODE BREAKDOWN VOLTAGE SERIES PREFIX: PSP - Phoenix Surge Protector MODIFIER: (Receptacle


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AM DEMODULATOR USING PLL 565

Abstract: NE565 PLL CIRCUIT DIAGRAM OF AM DEMODULATOR USING PLL 565 AM DEMODULATOR USING ne565 circuit diagram ne565 PLL NE565 Signetics NE565 565 PLL pin diagram Signetics 565
Text: precision current source and a non-saturating Schm itt trigger. In operation, the current source alternately charges and discharges an external tim ing capacitor betw een tw o sw itching levels of the Schm itt , the diode D 2 . W hen the voltage on C-i reaches the upper trig g e rin g th re s h o ld , th e S c h m itt trig g e r changes state and activates the transistor Q 3 . This provides a current sink and , utput o f the Schm itt trigger. The com ple te circuit for the 565 is show n in Figure 2. T ransistors Q


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PDF NE565 AN183 AM DEMODULATOR USING PLL 565 NE565 PLL CIRCUIT DIAGRAM OF AM DEMODULATOR USING PLL 565 AM DEMODULATOR USING ne565 circuit diagram PLL NE565 Signetics NE565 565 PLL pin diagram Signetics 565
UDN5712

Abstract: ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers
Text: (80V! and high current (300mA) NPN output transistors. In addition an overshoo : clamp diode is , NO. AND MANUFACTURERS PART NO. WHEN ORDERING ITT GEMINI 265 Signetics Outline Drawings 0 IB , c™ viri»® ITT GEMINI 266 FOR CURRE:NT PRICES PHONE HARLOW (0279) 29644 Signetics Outline , ORDERING ITT 267 Signetics Outline Drawings 15 4,70 MBS) 4.19 (-165) -0 0 OJj ' 0.66 (.0341 s , QUOTE STOCK NO. AND MANUFACTURERS PART NO. WHEN ORDERING ITT GEMINI 269 Signetics Outline Drawings


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PDF 300mA) UDN5712 ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers
2008 - CM05B105K10A

Abstract: No abstract text available
Text: Temperature Range Storage Temperature Range Maximum Junction Temperature Symbol VCC REF VTT_IN ITT Pd1 Pd2 , VUVLO 3.5 100 3.8 160 4.1 220 V mV VCC : sweep up VCC : sweep down VTT1 VTT2 ITT + ITTHRON1 LRON1 REF-20m REF-20m 1.8 REF REF 0.3 0.3 REF+20m REF+20m -1.8 0.5 0.5 V V A A ITT =0A ITT =-1.8A to 1.8A IST ICC 50 , VTT (50mV/Div.) VTT (50mV/Div.) VTT (50mV/Div.) ITT (1A/Div.) ITT (1A/Div.) ITT (1A/Div , .) VTT REF VTT REF VTT IN ITT ITT (1A/Div.) (1A/Div.) VCC VTT IN VCC Fig.4 DDR (-1A1A) Fig


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PDF BD3537F BD3537F BD3537F, CM05B105K10A
BB730

Abstract: Scans-00122504
Text:  ITT SEMICOND/ INTERMETALL blE J> ■4bôS711 0003101 ST7 «ISI BB730 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the whole range of VHF or UHF television bands. These diodes are available as singles or as matched sets of two or more units according to the tracking condition described below. These diodes are delivered taped , 30 V Junction Temperature ti 125 °C Storage Temperature Range TS -55 to +125 116 ITT SEMICOND


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PDF BB730 4bfl2711 00D3n0 BB730 Scans-00122504
2011 - 200DE

Abstract: CM3202-00DE
Text: low-leakage Schottky diode in series with ADJSD pin is recommended to avoid interference with the voltage , V, IDDQ = 0.1 A IDDQ = 2 A (Note 4) 2.450 Hysteresis = 100 mV 2.40 150 2.70 170 50 150 IDDQ = 0, ITT , LOAD VTT LINE ITT LIM IVTT OFF 2.500 10 5 500 0.8 2.5 3.0 2.550 25 25 V mV mV mV mA A VTT Regulator VTT Output Voltage VTT Load Regulation VTT Line Regulation ITT Current Limit VTT Shutdown Leakage Current ITT = 100 mA Source, 0 ITT 2 A (Note 3) Sink, -2 A ITT 0 (Note 3) 3.1 V VIN 3.6 V, ITT = 0.1


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PDF CM3202-00 CM3202-00/D 200DE CM3202-00DE
Supplyframe Tracking Pixel